Transistor - FET, MOSFET - Susunan

Rumah
Transistor - FET, MOSFET - Susunan

SI4936ADY-T1-GE3

Vishay Siliconix

SI4936ADY-T1-GE3

bahagian bahagian: 77137

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.4A, Rds On (Maks) @ Id, Vgs: 36 mOhm @ 5.9A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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Vishay Siliconix

SI4920DY-T1-E3

bahagian bahagian: 2966

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Rds On (Maks) @ Id, Vgs: 25 mOhm @ 6.9A, 10V, Vgs (th) (Maks) @ Id: 1V @ 250µA (Min),

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SI1905BDH-T1-E3

Vishay Siliconix

SI1905BDH-T1-E3

bahagian bahagian: 3022

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 8V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 630mA, Rds On (Maks) @ Id, Vgs: 542 mOhm @ 580mA, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

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SI4904DY-T1-GE3

Vishay Siliconix

SI4904DY-T1-GE3

bahagian bahagian: 68499

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8A, Rds On (Maks) @ Id, Vgs: 16 mOhm @ 5A, 10V, Vgs (th) (Maks) @ Id: 2V @ 250µA,

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SI4900DY-T1-GE3

Vishay Siliconix

SI4900DY-T1-GE3

bahagian bahagian: 132105

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.3A, Rds On (Maks) @ Id, Vgs: 58 mOhm @ 4.3A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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SIA907EDJT-T1-GE3

Vishay Siliconix

SIA907EDJT-T1-GE3

bahagian bahagian: 150001

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.5A (Tc), Rds On (Maks) @ Id, Vgs: 57 mOhm @ 3.6A, 4.5V, Vgs (th) (Maks) @ Id: 1.4V @ 250µA,

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SI4804CDY-T1-E3

Vishay Siliconix

SI4804CDY-T1-E3

bahagian bahagian: 129067

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8A, Rds On (Maks) @ Id, Vgs: 22 mOhm @ 7.5A, 10V, Vgs (th) (Maks) @ Id: 2.4V @ 250µA,

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SI4922BDY-T1-GE3

Vishay Siliconix

SI4922BDY-T1-GE3

bahagian bahagian: 93125

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8A, Rds On (Maks) @ Id, Vgs: 16 mOhm @ 5A, 10V, Vgs (th) (Maks) @ Id: 1.8V @ 250µA,

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SQJQ900E-T1_GE3

Vishay Siliconix

SQJQ900E-T1_GE3

bahagian bahagian: 69083

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 100A (Tc), Rds On (Maks) @ Id, Vgs: 3.9 mOhm @ 20A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

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SI6963BDQ-T1-E3

Vishay Siliconix

SI6963BDQ-T1-E3

bahagian bahagian: 3001

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.4A, Rds On (Maks) @ Id, Vgs: 45 mOhm @ 3.9A, 4.5V, Vgs (th) (Maks) @ Id: 1.4V @ 250µA,

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SI4539ADY-T1-GE3

Vishay Siliconix

SI4539ADY-T1-GE3

bahagian bahagian: 3314

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.4A, 3.7A, Rds On (Maks) @ Id, Vgs: 36 mOhm @ 5.9A, 10V, Vgs (th) (Maks) @ Id: 1V @ 250µA (Min),

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SI4816BDY-T1-E3

Vishay Siliconix

SI4816BDY-T1-E3

bahagian bahagian: 93648

Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.8A, 8.2A, Rds On (Maks) @ Id, Vgs: 18.5 mOhm @ 6.8A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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Vishay Siliconix

SI1023X-T1-E3

bahagian bahagian: 2929

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 370mA, Rds On (Maks) @ Id, Vgs: 1.2 Ohm @ 350mA, 4.5V, Vgs (th) (Maks) @ Id: 450mV @ 250µA (Min),

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SQ3987EV-T1_GE3

Vishay Siliconix

SQ3987EV-T1_GE3

bahagian bahagian: 16233

Jenis FET: 2 P-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3A (Tc), Rds On (Maks) @ Id, Vgs: 133 mOhm @ 1.5A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

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Vishay Siliconix

SI5915DC-T1-E3

bahagian bahagian: 2988

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 8V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.4A, Rds On (Maks) @ Id, Vgs: 70 mOhm @ 3.4A, 4.5V, Vgs (th) (Maks) @ Id: 450mV @ 250µA (Min),

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SI3585DV-T1-GE3

Vishay Siliconix

SI3585DV-T1-GE3

bahagian bahagian: 3014

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2A, 1.5A, Rds On (Maks) @ Id, Vgs: 125 mOhm @ 2.4A, 4.5V, Vgs (th) (Maks) @ Id: 600mV @ 250µA (Min),

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Vishay Siliconix

SI7956DP-T1-E3

bahagian bahagian: 43929

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 150V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.6A, Rds On (Maks) @ Id, Vgs: 105 mOhm @ 4.1A, 10V, Vgs (th) (Maks) @ Id: 4V @ 250µA,

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SI3552DV-T1-GE3

Vishay Siliconix

SI3552DV-T1-GE3

bahagian bahagian: 189573

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Rds On (Maks) @ Id, Vgs: 105 mOhm @ 2.5A, 10V, Vgs (th) (Maks) @ Id: 1V @ 250µA (Min),

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SQJ956EP-T1_GE3

Vishay Siliconix

SQJ956EP-T1_GE3

bahagian bahagian: 9990

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 23A (Tc), Rds On (Maks) @ Id, Vgs: 26.7 mOhm @ 5.2A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

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SI7940DP-T1-GE3

Vishay Siliconix

SI7940DP-T1-GE3

bahagian bahagian: 2920

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 12V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 7.6A, Rds On (Maks) @ Id, Vgs: 17 mOhm @ 11.8A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

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SI4936ADY-T1-E3

Vishay Siliconix

SI4936ADY-T1-E3

bahagian bahagian: 77138

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.4A, Rds On (Maks) @ Id, Vgs: 36 mOhm @ 5.9A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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SI5933CDC-T1-GE3

Vishay Siliconix

SI5933CDC-T1-GE3

bahagian bahagian: 181122

Jenis FET: 2 P-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.7A, Rds On (Maks) @ Id, Vgs: 144 mOhm @ 2.5A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

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SI7223DN-T1-GE3

Vishay Siliconix

SI7223DN-T1-GE3

bahagian bahagian: 9952

Jenis FET: 2 P-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6A (Tc), Rds On (Maks) @ Id, Vgs: 26.4 mOhm @ 8A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

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SI9933CDY-T1-E3

Vishay Siliconix

SI9933CDY-T1-E3

bahagian bahagian: 154905

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4A, Rds On (Maks) @ Id, Vgs: 58 mOhm @ 4.8A, 4.5V, Vgs (th) (Maks) @ Id: 1.4V @ 250µA,

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SIZ346DT-T1-GE3

Vishay Siliconix

SIZ346DT-T1-GE3

bahagian bahagian: 9988

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 17A (Tc), 30A (Tc), Rds On (Maks) @ Id, Vgs: 28.5 mOhm @ 10A, 10V, 11.5 mOhm @ 14.4A, 10V, Vgs (th) (Maks) @ Id: 2.2V @ 250µA, 2.4V @ 250µA,

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SIZ728DT-T1-GE3

Vishay Siliconix

SIZ728DT-T1-GE3

bahagian bahagian: 110130

Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 25V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 16A, 35A, Rds On (Maks) @ Id, Vgs: 7.7 mOhm @ 18A, 10V, Vgs (th) (Maks) @ Id: 2.2V @ 250µA,

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SI4288DY-T1-GE3

Vishay Siliconix

SI4288DY-T1-GE3

bahagian bahagian: 118896

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 9.2A, Rds On (Maks) @ Id, Vgs: 20 mOhm @ 10A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

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Vishay Siliconix

SI5938DU-T1-E3

bahagian bahagian: 2940

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6A, Rds On (Maks) @ Id, Vgs: 39 mOhm @ 4.4A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

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Vishay Siliconix

SI4650DY-T1-E3

bahagian bahagian: 2953

Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8A, Rds On (Maks) @ Id, Vgs: 18 mOhm @ 8A, 10V, Vgs (th) (Maks) @ Id: 3V @ 1mA,

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SI5997DU-T1-GE3

Vishay Siliconix

SI5997DU-T1-GE3

bahagian bahagian: 168303

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6A, Rds On (Maks) @ Id, Vgs: 54 mOhm @ 3A, 10V, Vgs (th) (Maks) @ Id: 2.4V @ 250µA,

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SIZ350DT-T1-GE3

Vishay Siliconix

SIZ350DT-T1-GE3

bahagian bahagian: 220

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 18.5A (Ta), 30A (Tc), Rds On (Maks) @ Id, Vgs: 6.75 mOhm @ 15A, 10V, Vgs (th) (Maks) @ Id: 2.4V @ 250µA,

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SI4590DY-T1-GE3

Vishay Siliconix

SI4590DY-T1-GE3

bahagian bahagian: 189788

Jenis FET: N and P-Channel, Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.4A, 2.8A, Rds On (Maks) @ Id, Vgs: 57 mOhm @ 2A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

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SI3900DV-T1-GE3

Vishay Siliconix

SI3900DV-T1-GE3

bahagian bahagian: 169893

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2A, Rds On (Maks) @ Id, Vgs: 125 mOhm @ 2.4A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

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Vishay Siliconix

SI1023X-T1-GE3

bahagian bahagian: 119178

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 370mA, Rds On (Maks) @ Id, Vgs: 1.2 Ohm @ 350mA, 4.5V, Vgs (th) (Maks) @ Id: 450mV @ 250µA (Min),

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SI1902DL-T1-GE3

Vishay Siliconix

SI1902DL-T1-GE3

bahagian bahagian: 162518

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 660mA, Rds On (Maks) @ Id, Vgs: 385 mOhm @ 660mA, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

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SI4532CDY-T1-GE3

Vishay Siliconix

SI4532CDY-T1-GE3

bahagian bahagian: 107643

Jenis FET: N and P-Channel, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6A, 4.3A, Rds On (Maks) @ Id, Vgs: 47 mOhm @ 3.5A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

Senarai harapan

648

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