Menu
MelayuMelayu
Rfqs / order.
0Rfqs / order.

Transistor - FET, MOSFET - Susunan

IRF7317TRPBF
Infineon Technologies

IRF7317TRPBF

bahagian bahagian: 158547

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6.6A, 5.3A, Rds On (Maks) @ Id, Vgs: 29 mOhm @ 6A, 4.5V, Vgs (th) (Maks) @ Id: 700mV @ 250µA,

Bersenang-senang
IRFHS9351TRPBF
Infineon Technologies

IRFHS9351TRPBF

bahagian bahagian: 112687

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.3A, Rds On (Maks) @ Id, Vgs: 170 mOhm @ 3.1A, 10V, Vgs (th) (Maks) @ Id: 2.4V @ 10µA,

Bersenang-senang
IRF7910TRPBF
Infineon Technologies

IRF7910TRPBF

bahagian bahagian: 127888

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 12V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 10A, Rds On (Maks) @ Id, Vgs: 15 mOhm @ 8A, 4.5V, Vgs (th) (Maks) @ Id: 2V @ 250µA,

Bersenang-senang
IRL6297SDTRPBF
Infineon Technologies

IRL6297SDTRPBF

bahagian bahagian: 142257

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 15A, Rds On (Maks) @ Id, Vgs: 4.9 mOhm @ 15A, 4.5V, Vgs (th) (Maks) @ Id: 1.1V @ 35µA,

Bersenang-senang
SQJB40EP-T1_GE3
Vishay Siliconix

SQJB40EP-T1_GE3

bahagian bahagian: 152466

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 30A (Tc), Rds On (Maks) @ Id, Vgs: 8 mOhm @ 8A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

Bersenang-senang
SQJ963EP-T1_GE3
Vishay Siliconix

SQJ963EP-T1_GE3

bahagian bahagian: 91401

Jenis FET: 2 P-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8A (Tc), Rds On (Maks) @ Id, Vgs: 85 mOhm @ 3.5A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

Bersenang-senang
SI7972DP-T1-GE3
Vishay Siliconix

SI7972DP-T1-GE3

bahagian bahagian: 149146

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8A (Tc), Rds On (Maks) @ Id, Vgs: 18 mOhm @ 11A, 10V, Vgs (th) (Maks) @ Id: 2.7V @ 250µA,

Bersenang-senang
SQJQ910EL-T1_GE3
Vishay Siliconix

SQJQ910EL-T1_GE3

bahagian bahagian: 2597

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 70A (Tc), Rds On (Maks) @ Id, Vgs: 8.6 mOhm @ 10A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

Bersenang-senang
SI7949DP-T1-E3
Vishay Siliconix

SI7949DP-T1-E3

bahagian bahagian: 39374

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.2A, Rds On (Maks) @ Id, Vgs: 64 mOhm @ 5A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

Bersenang-senang
SQJB00EP-T1_GE3
Vishay Siliconix

SQJB00EP-T1_GE3

bahagian bahagian: 152443

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 30A (Tc), Rds On (Maks) @ Id, Vgs: 13 mOhm @ 10A, 10V, Vgs (th) (Maks) @ Id: 3.5V @ 250µA,

Bersenang-senang
SI4900DY-T1-E3
Vishay Siliconix

SI4900DY-T1-E3

bahagian bahagian: 142035

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.3A, Rds On (Maks) @ Id, Vgs: 58 mOhm @ 4.3A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

Bersenang-senang
SQJQ980EL-T1_GE3
Vishay Siliconix

SQJQ980EL-T1_GE3

bahagian bahagian: 2601

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 80V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 36A (Tc), Rds On (Maks) @ Id, Vgs: 13.5 mOhm @ 5A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

Bersenang-senang
SIZF906ADT-T1-GE3
Vishay Siliconix

SIZF906ADT-T1-GE3

bahagian bahagian: 2533

Jenis FET: 2 N-Channel (Dual), Schottky, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 27A (Ta), 60A (Tc), 52A (Ta), 60A (Tc), Rds On (Maks) @ Id, Vgs: 3.8 mOhm @ 15A, 10V, 1.17 mOhm @ 20A, 10V, Vgs (th) (Maks) @ Id: 2.2V @ 250µA,

Bersenang-senang
SI4214DDY-T1-E3
Vishay Siliconix

SI4214DDY-T1-E3

bahagian bahagian: 188973

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8.5A, Rds On (Maks) @ Id, Vgs: 19.5 mOhm @ 8A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

Bersenang-senang
SQJB80EP-T1_GE3
Vishay Siliconix

SQJB80EP-T1_GE3

bahagian bahagian: 152485

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 80V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 30A (Tc), Rds On (Maks) @ Id, Vgs: 19 mOhm @ 8A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

Bersenang-senang
PMDXB950UPEZ
Nexperia USA Inc.

PMDXB950UPEZ

bahagian bahagian: 193079

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 500mA, Rds On (Maks) @ Id, Vgs: 1.4 Ohm @ 500mA, 4.5V, Vgs (th) (Maks) @ Id: 950mV @ 250µA,

Bersenang-senang
PMDT290UNE,115
Nexperia USA Inc.

PMDT290UNE,115

bahagian bahagian: 177961

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 800mA, Rds On (Maks) @ Id, Vgs: 380 mOhm @ 500mA, 4.5V, Vgs (th) (Maks) @ Id: 950mV @ 250µA,

Bersenang-senang
PMDPB70XPE,115
Nexperia USA Inc.

PMDPB70XPE,115

bahagian bahagian: 137499

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3A, Rds On (Maks) @ Id, Vgs: 79 mOhm @ 2A, 4.5V, Vgs (th) (Maks) @ Id: 1.25V @ 250µA,

Bersenang-senang
NX3008PBKV,115
Nexperia USA Inc.

NX3008PBKV,115

bahagian bahagian: 177076

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 220mA, Rds On (Maks) @ Id, Vgs: 4.1 Ohm @ 200mA, 4.5V, Vgs (th) (Maks) @ Id: 1.1V @ 250µA,

Bersenang-senang
QS6K21TR
Rohm Semiconductor

QS6K21TR

bahagian bahagian: 129283

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 45V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1A, Vgs (th) (Maks) @ Id: 1.5V @ 1mA,

Bersenang-senang
EM6M2T2R
Rohm Semiconductor

EM6M2T2R

bahagian bahagian: 127455

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 200mA, Rds On (Maks) @ Id, Vgs: 1 Ohm @ 200mA, 4V, Vgs (th) (Maks) @ Id: 1V @ 1mA,

Bersenang-senang
TPC8223-H,LQ(S
Toshiba Semiconductor and Storage

TPC8223-H,LQ(S

bahagian bahagian: 150969

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 9A, Rds On (Maks) @ Id, Vgs: 17 mOhm @ 4.5A, 10V, Vgs (th) (Maks) @ Id: 2.3V @ 100µA,

Bersenang-senang
SSM6N44FE,LM
Toshiba Semiconductor and Storage

SSM6N44FE,LM

bahagian bahagian: 105414

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 100mA, Rds On (Maks) @ Id, Vgs: 4 Ohm @ 10mA, 4V, Vgs (th) (Maks) @ Id: 1.5V @ 100µA,

Bersenang-senang
SSM6N7002BFE,LM
Toshiba Semiconductor and Storage

SSM6N7002BFE,LM

bahagian bahagian: 179839

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 200mA, Rds On (Maks) @ Id, Vgs: 2.1 Ohm @ 500mA, 10V, Vgs (th) (Maks) @ Id: 3.1V @ 250µA,

Bersenang-senang
SSM6L39TU,LF
Toshiba Semiconductor and Storage

SSM6L39TU,LF

bahagian bahagian: 111677

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, 1.8V Drive, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 800mA, Rds On (Maks) @ Id, Vgs: 143 mOhm @ 600MA, 4V, Vgs (th) (Maks) @ Id: 1V @ 1mA,

Bersenang-senang
SSM6N37FU,LF
Toshiba Semiconductor and Storage

SSM6N37FU,LF

bahagian bahagian: 156819

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, 1.5V Drive, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 250mA (Ta), Rds On (Maks) @ Id, Vgs: 2.2 Ohm @ 100mA, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 1mA,

Bersenang-senang
NTHD4102PT1G
ON Semiconductor

NTHD4102PT1G

bahagian bahagian: 108053

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.9A, Rds On (Maks) @ Id, Vgs: 80 mOhm @ 2.9A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

Bersenang-senang
FDMB3800N
ON Semiconductor

FDMB3800N

bahagian bahagian: 191355

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.8A, Rds On (Maks) @ Id, Vgs: 40 mOhm @ 4.8A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

Bersenang-senang
FDS6890A
ON Semiconductor

FDS6890A

bahagian bahagian: 101115

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 7.5A, Rds On (Maks) @ Id, Vgs: 18 mOhm @ 7.5A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

Bersenang-senang
FDY1002PZ
ON Semiconductor

FDY1002PZ

bahagian bahagian: 182634

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 830mA, Rds On (Maks) @ Id, Vgs: 500 mOhm @ 830mA, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

Bersenang-senang
FDMA1032CZ
ON Semiconductor

FDMA1032CZ

bahagian bahagian: 89328

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.7A, 3.1A, Rds On (Maks) @ Id, Vgs: 68 mOhm @ 3.7A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

Bersenang-senang
FDME1034CZT
ON Semiconductor

FDME1034CZT

bahagian bahagian: 154682

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.8A, 2.6A, Rds On (Maks) @ Id, Vgs: 66 mOhm @ 3.4A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

Bersenang-senang
FDY3000NZ
ON Semiconductor

FDY3000NZ

bahagian bahagian: 111326

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 600mA, Rds On (Maks) @ Id, Vgs: 700 mOhm @ 600mA, 4.5V, Vgs (th) (Maks) @ Id: 1.3V @ 250µA,

Bersenang-senang
DMC2400UV-7
Diodes Incorporated

DMC2400UV-7

bahagian bahagian: 138188

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.03A, 700mA, Rds On (Maks) @ Id, Vgs: 480 mOhm @ 200mA, 5V, Vgs (th) (Maks) @ Id: 900mV @ 250µA,

Bersenang-senang
DMG1016V-7
Diodes Incorporated

DMG1016V-7

bahagian bahagian: 107374

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 870mA, 640mA, Rds On (Maks) @ Id, Vgs: 400 mOhm @ 600mA, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

Bersenang-senang
DMG5802LFX-7
Diodes Incorporated

DMG5802LFX-7

bahagian bahagian: 173089

Jenis FET: 2 N-Channel (Dual) Common Drain, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 24V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6.5A, Rds On (Maks) @ Id, Vgs: 15 mOhm @ 6.5A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

Bersenang-senang