Menu
MelayuMelayu
Rfqs / order.
0Rfqs / order.

Transistor - FET, MOSFET - Susunan

DMP210DUDJ-7
Diodes Incorporated

DMP210DUDJ-7

bahagian bahagian: 191309

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 200mA, Rds On (Maks) @ Id, Vgs: 5.5 Ohm @ 100mA, 4.5V, Vgs (th) (Maks) @ Id: 1.15V @ 250µA,

Bersenang-senang
DMN601DWK-7
Diodes Incorporated

DMN601DWK-7

bahagian bahagian: 176941

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 305mA, Rds On (Maks) @ Id, Vgs: 2 Ohm @ 500mA, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 1mA,

Bersenang-senang
DMN5L06DMK-7
Diodes Incorporated

DMN5L06DMK-7

bahagian bahagian: 107540

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 50V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 305mA, Rds On (Maks) @ Id, Vgs: 2 Ohm @ 50mA, 5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

Bersenang-senang
DMN2050LFDB-7
Diodes Incorporated

DMN2050LFDB-7

bahagian bahagian: 105819

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.3A, Rds On (Maks) @ Id, Vgs: 45 mOhm @ 5A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

Bersenang-senang
DMN2004DMK-7
Diodes Incorporated

DMN2004DMK-7

bahagian bahagian: 125678

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 540mA, Rds On (Maks) @ Id, Vgs: 550 mOhm @ 540mA, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

Bersenang-senang
SQJB70EP-T1_GE3
Vishay Siliconix

SQJB70EP-T1_GE3

bahagian bahagian: 113439

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 11.3A (Tc), Rds On (Maks) @ Id, Vgs: 95 mOhm @ 4A, 10V, Vgs (th) (Maks) @ Id: 3.5V @ 250µA,

Bersenang-senang
SI4936BDY-T1-E3
Vishay Siliconix

SI4936BDY-T1-E3

bahagian bahagian: 168524

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6.9A, Rds On (Maks) @ Id, Vgs: 35 mOhm @ 5.9A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

Bersenang-senang
SI1965DH-T1-E3
Vishay Siliconix

SI1965DH-T1-E3

bahagian bahagian: 100544

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 12V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.3A, Rds On (Maks) @ Id, Vgs: 390 mOhm @ 1A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

Bersenang-senang
SIA911ADJ-T1-GE3
Vishay Siliconix

SIA911ADJ-T1-GE3

bahagian bahagian: 139873

Jenis FET: 2 P-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.5A, Rds On (Maks) @ Id, Vgs: 116 mOhm @ 2.8A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

Bersenang-senang
SQJ990EP-T1_GE3
Vishay Siliconix

SQJ990EP-T1_GE3

bahagian bahagian: 141592

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 34A (Tc), Rds On (Maks) @ Id, Vgs: 40 mOhm @ 6A, 10V, 19 mOhm @ 10A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

Bersenang-senang
SQ1563AEH-T1_GE3
Vishay Siliconix

SQ1563AEH-T1_GE3

bahagian bahagian: 2535

Jenis FET: N and P-Channel, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 850mA (Tc), Rds On (Maks) @ Id, Vgs: 280 mOhm @ 850mA, 4.5V, 575 mOhm @ 800mA, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

Bersenang-senang
SIA537EDJ-T1-GE3
Vishay Siliconix

SIA537EDJ-T1-GE3

bahagian bahagian: 157576

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 12V, 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.5A, Rds On (Maks) @ Id, Vgs: 28 mOhm @ 5.2A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

Bersenang-senang
SI5513CDC-T1-GE3
Vishay Siliconix

SI5513CDC-T1-GE3

bahagian bahagian: 193923

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4A, 3.7A, Rds On (Maks) @ Id, Vgs: 55 mOhm @ 4.4A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

Bersenang-senang
SQJQ904E-T1_GE3
Vishay Siliconix

SQJQ904E-T1_GE3

bahagian bahagian: 54848

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 100A (Tc), Rds On (Maks) @ Id, Vgs: 3.4 mOhm @ 20A, 10V, Vgs (th) (Maks) @ Id: 3.5V @ 250µA,

Bersenang-senang
SI1926DL-T1-E3
Vishay Siliconix

SI1926DL-T1-E3

bahagian bahagian: 150474

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 370mA, Rds On (Maks) @ Id, Vgs: 1.4 Ohm @ 340mA, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

Bersenang-senang
SI7212DN-T1-E3
Vishay Siliconix

SI7212DN-T1-E3

bahagian bahagian: 57376

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.9A, Rds On (Maks) @ Id, Vgs: 36 mOhm @ 6.8A, 10V, Vgs (th) (Maks) @ Id: 1.6V @ 250µA,

Bersenang-senang
IRF9956TRPBF
Infineon Technologies

IRF9956TRPBF

bahagian bahagian: 162504

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.5A, Rds On (Maks) @ Id, Vgs: 100 mOhm @ 2.2A, 10V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

Bersenang-senang
IRF7301TRPBF
Infineon Technologies

IRF7301TRPBF

bahagian bahagian: 199318

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.2A, Rds On (Maks) @ Id, Vgs: 50 mOhm @ 2.6A, 4.5V, Vgs (th) (Maks) @ Id: 700mV @ 250µA,

Bersenang-senang
IRF3575DTRPBF
Infineon Technologies

IRF3575DTRPBF

bahagian bahagian: 34855

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 25V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 303A (Tc),

Bersenang-senang
IRF7324TRPBF
Infineon Technologies

IRF7324TRPBF

bahagian bahagian: 97929

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 9A, Rds On (Maks) @ Id, Vgs: 18 mOhm @ 9A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

Bersenang-senang
IPG20N06S2L35ATMA1
Infineon Technologies

IPG20N06S2L35ATMA1

bahagian bahagian: 145368

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 55V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 20A, Rds On (Maks) @ Id, Vgs: 35 mOhm @ 15A, 10V, Vgs (th) (Maks) @ Id: 2V @ 27µA,

Bersenang-senang
IRF7103TRPBF
Infineon Technologies

IRF7103TRPBF

bahagian bahagian: 149977

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 50V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3A, Rds On (Maks) @ Id, Vgs: 130 mOhm @ 3A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

Bersenang-senang
IPG20N06S2L50ATMA1
Infineon Technologies

IPG20N06S2L50ATMA1

bahagian bahagian: 152225

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 55V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 20A, Rds On (Maks) @ Id, Vgs: 50 mOhm @ 15A, 10V, Vgs (th) (Maks) @ Id: 2V @ 19µA,

Bersenang-senang
SH8J31GZETB
Rohm Semiconductor

SH8J31GZETB

bahagian bahagian: 96459

Jenis FET: 2 P-Channel (Dual), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.5A, Rds On (Maks) @ Id, Vgs: 70 mOhm @ 4.5A, 10V, Vgs (th) (Maks) @ Id: 3V @ 1mA,

Bersenang-senang
SH8J62TB1
Rohm Semiconductor

SH8J62TB1

bahagian bahagian: 138723

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.5A, Rds On (Maks) @ Id, Vgs: 56 mOhm @ 4.5A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 1mA,

Bersenang-senang
EM6M1T2R
Rohm Semiconductor

EM6M1T2R

bahagian bahagian: 166276

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 100mA, 200mA, Rds On (Maks) @ Id, Vgs: 8 Ohm @ 10mA, 4V,

Bersenang-senang
SSM6N57NU,LF
Toshiba Semiconductor and Storage

SSM6N57NU,LF

bahagian bahagian: 182932

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4A, Rds On (Maks) @ Id, Vgs: 46 mOhm @ 2A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 1mA,

Bersenang-senang
TPC8407,LQ(S
Toshiba Semiconductor and Storage

TPC8407,LQ(S

bahagian bahagian: 151036

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 9A, 7.4A, Rds On (Maks) @ Id, Vgs: 17 mOhm @ 4.5A, 10V, Vgs (th) (Maks) @ Id: 2.3V @ 100µA,

Bersenang-senang
SSM6N7002CFU,LF
Toshiba Semiconductor and Storage

SSM6N7002CFU,LF

bahagian bahagian: 164511

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 170mA, Rds On (Maks) @ Id, Vgs: 3.9 Ohm @ 100mA, 10V, Vgs (th) (Maks) @ Id: 2.1V @ 250µA,

Bersenang-senang
NTMD4N03R2G
ON Semiconductor

NTMD4N03R2G

bahagian bahagian: 117636

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4A, Rds On (Maks) @ Id, Vgs: 60 mOhm @ 4A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

Bersenang-senang
FDS6911
ON Semiconductor

FDS6911

bahagian bahagian: 99941

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 7.5A, Rds On (Maks) @ Id, Vgs: 13 mOhm @ 7.5A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

Bersenang-senang
FDMD8630
ON Semiconductor

FDMD8630

bahagian bahagian: 2633

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 38A (Ta), 167A (Tc), Rds On (Maks) @ Id, Vgs: 1 mOhm @ 38A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

Bersenang-senang
FDS6975
ON Semiconductor

FDS6975

bahagian bahagian: 115211

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6A, Rds On (Maks) @ Id, Vgs: 32 mOhm @ 6A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

Bersenang-senang
FDS4897C
ON Semiconductor

FDS4897C

bahagian bahagian: 170499

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6.2A, 4.4A, Rds On (Maks) @ Id, Vgs: 29 mOhm @ 6.2A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

Bersenang-senang
MCH6660-TL-W
ON Semiconductor

MCH6660-TL-W

bahagian bahagian: 167591

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, 1.8V Drive, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2A, 1.5A, Rds On (Maks) @ Id, Vgs: 136 mOhm @ 1A, 4.5V, Vgs (th) (Maks) @ Id: 1.3V @ 1mA,

Bersenang-senang
FC6946010R
Panasonic Electronic Components

FC6946010R

bahagian bahagian: 128607

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 100mA, Rds On (Maks) @ Id, Vgs: 12 Ohm @ 10mA, 4V, Vgs (th) (Maks) @ Id: 1.5V @ 1µA,

Bersenang-senang