Transistor - FET, MOSFET - Susunan

CSD87501L

bahagian bahagian: 154135

Jenis FET: 2 N-Channel (Dual) Common Drain, Ciri FET: Logic Level Gate, Vgs (th) (Maks) @ Id: 2.3V @ 250µA,

CSD75207W15

bahagian bahagian: 132615

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.9A, Rds On (Maks) @ Id, Vgs: 162 mOhm @ 1A, 1.8V, Vgs (th) (Maks) @ Id: 1.1V @ 250µA,

FDG6303N-F169

bahagian bahagian: 2964

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 25V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 500mA (Ta), Rds On (Maks) @ Id, Vgs: 450 mOhm @ 500mA, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

NTZD3155CT1H

bahagian bahagian: 142970

Jenis FET: N and P-Channel, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 540mA, 430mA, Rds On (Maks) @ Id, Vgs: 550 mOhm @ 540mA, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

ECH8661-TL-HX

bahagian bahagian: 3018

FDMD8240L

bahagian bahagian: 56888

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 23A, Rds On (Maks) @ Id, Vgs: 2.6 mOhm @ 23A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

FDPC4044

bahagian bahagian: 42785

Jenis FET: 2 N-Channel (Dual) Common Drain, Ciri FET: Logic Level Gate, Rds On (Maks) @ Id, Vgs: 4.3 mOhm @ 27A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

FDC6432SH

bahagian bahagian: 2951

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, 12V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.4A, 2.5A, Rds On (Maks) @ Id, Vgs: 90 mOhm @ 2.4A, 10V, Vgs (th) (Maks) @ Id: 3V @ 1mA,

NDC7001C

bahagian bahagian: 161454

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 510mA, 340mA, Rds On (Maks) @ Id, Vgs: 2 Ohm @ 510mA, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

DMN3032LFDB-13

bahagian bahagian: 198100

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6.2A, Rds On (Maks) @ Id, Vgs: 30 mOhm @ 5.8A, 10V, Vgs (th) (Maks) @ Id: 2V @ 250µA,

DMN33D8LDW-7

bahagian bahagian: 111432

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 250mA, Rds On (Maks) @ Id, Vgs: 2.4 Ohm @ 250mA, 10V, Vgs (th) (Maks) @ Id: 1.5V @ 100µA,

DMC1229UFDB-13

bahagian bahagian: 127332

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 12V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.6A, 3.8A, Rds On (Maks) @ Id, Vgs: 29 mOhm @ 5A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

DMC2041UFDB-7

bahagian bahagian: 172534

Jenis FET: N and P-Channel, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.7A, 3.2A, Rds On (Maks) @ Id, Vgs: 40 mOhm @ 4.2A, 4.5V, Vgs (th) (Maks) @ Id: 1.4V @ 250µA,

DMC1028UFDB-7

bahagian bahagian: 102586

Jenis FET: N and P-Channel, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 12V, 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6A, 3.4A, Rds On (Maks) @ Id, Vgs: 25 mOhm @ 5.2A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

DMTH6010LPD-13

bahagian bahagian: 135904

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 13.1A (Ta), 47.6A (Tc), Rds On (Maks) @ Id, Vgs: 11 mOhm @ 20A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

DMC4050SSDQ-13

bahagian bahagian: 146703

Jenis FET: N and P-Channel Complementary, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.3A, Rds On (Maks) @ Id, Vgs: 45 mOhm @ 3A, 10V, Vgs (th) (Maks) @ Id: 1.8V @ 250µA,

DMN3033LSDQ-13

bahagian bahagian: 167988

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6.9A, Rds On (Maks) @ Id, Vgs: 20 mOhm @ 6.9A, 10V, Vgs (th) (Maks) @ Id: 2.1V @ 250µA,

ZXMHC3A01T8TA

bahagian bahagian: 83555

Jenis FET: 2 N and 2 P-Channel (H-Bridge), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.7A, 2A, Rds On (Maks) @ Id, Vgs: 120 mOhm @ 2.5A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

ZXMN2A04DN8TC

bahagian bahagian: 3343

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.9A, Rds On (Maks) @ Id, Vgs: 25 mOhm @ 5.9A, 4.5V, Vgs (th) (Maks) @ Id: 700mV @ 250µA (Min),

ZXMN10A08DN8TA

bahagian bahagian: 139574

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.6A, Rds On (Maks) @ Id, Vgs: 250 mOhm @ 3.2A, 10V, Vgs (th) (Maks) @ Id: 2V @ 250µA (Min),

SIZ328DT-T1-GE3

bahagian bahagian: 221

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 25V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 11.1A (Ta), 25.3A (Tc), 15A (Ta), 30A (Tc), Rds On (Maks) @ Id, Vgs: 15 mOhm @ 5A, 10V, 10 mOhm @ 5A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

SIZF916DT-T1-GE3

bahagian bahagian: 281

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 23A (Ta), 40A (Tc), Rds On (Maks) @ Id, Vgs: 4 mOhm @ 10A, 10V, 1.25 mOhm @ 10A, 10V, Vgs (th) (Maks) @ Id: 2.4V @ 250µA, 2.2V @ 250µA,

SI7905DN-T1-E3

bahagian bahagian: 73624

Jenis FET: 2 P-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6A, Rds On (Maks) @ Id, Vgs: 60 mOhm @ 5A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

SI1900DL-T1-GE3

bahagian bahagian: 337

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 630mA (Ta), 590mA (Ta), Rds On (Maks) @ Id, Vgs: 480 mOhm @ 590mA, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

SISB46DN-T1-GE3

bahagian bahagian: 104289

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 34A (Tc), Rds On (Maks) @ Id, Vgs: 11.71 mOhm @ 5A, 10V, Vgs (th) (Maks) @ Id: 2.2V @ 250µA,

SIZ988DT-T1-GE3

bahagian bahagian: 16265

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 40A (Tc), 60A (Tc), Rds On (Maks) @ Id, Vgs: 7.5 mOhm @ 10A, 10V, 4.1 mOhm @ 19A, 10V, Vgs (th) (Maks) @ Id: 2.4V @ 250µA, 2.2V @ 250µA,

SI6913DQ-T1-E3

bahagian bahagian: 71472

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 12V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.9A, Rds On (Maks) @ Id, Vgs: 21 mOhm @ 5.8A, 4.5V, Vgs (th) (Maks) @ Id: 900mV @ 400µA,

QS8M51TR

bahagian bahagian: 132178

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2A, 1.5A, Rds On (Maks) @ Id, Vgs: 325 mOhm @ 2A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 1mA,

HP8K22TB

bahagian bahagian: 139519

Jenis FET: 2 N-Channel (Half Bridge), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 27A, 57A, Rds On (Maks) @ Id, Vgs: 4.6 mOhm @ 20A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 1mA,

IPG20N06S2L65AATMA1

bahagian bahagian: 158126

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 55V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 20A, Rds On (Maks) @ Id, Vgs: 65 mOhm @ 15A, 10V, Vgs (th) (Maks) @ Id: 2V @ 14µA,

CMLDM7002AJ TR

bahagian bahagian: 188305

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 280mA, Rds On (Maks) @ Id, Vgs: 2 Ohm @ 500mA, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

GWM120-0075X1-SLSAM

bahagian bahagian: 3355

Jenis FET: 6 N-Channel (3-Phase Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 75V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 110A, Rds On (Maks) @ Id, Vgs: 4.9 mOhm @ 60A, 10V, Vgs (th) (Maks) @ Id: 4V @ 1mA,

VMM90-09P

bahagian bahagian: 480

VKM60-01P1

bahagian bahagian: 1092

Jenis FET: 4 N-Channel (H-Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 75A, Rds On (Maks) @ Id, Vgs: 25 mOhm @ 500mA, 10V, Vgs (th) (Maks) @ Id: 4V @ 4mA,

TSM2537CQ RFG

bahagian bahagian: 222

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, 1.8V Drive, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 11.6A (Tc), 9A (Tc), Rds On (Maks) @ Id, Vgs: 30 mOhm @ 6.4A, 4.5V, 55 mOhm @ 5A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

SSM6L61NU,LF

bahagian bahagian: 154751

Jenis FET: N and P-Channel, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4A,