Transistor - FET, MOSFET - Susunan

IRF7329TRPBF

bahagian bahagian: 126207

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 12V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 9.2A, Rds On (Maks) @ Id, Vgs: 17 mOhm @ 9.2A, 4.5V, Vgs (th) (Maks) @ Id: 900mV @ 250µA,

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IRF9389TRPBF

bahagian bahagian: 156541

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6.8A, 4.6A, Rds On (Maks) @ Id, Vgs: 27 mOhm @ 6.8A, 10V, Vgs (th) (Maks) @ Id: 2.3V @ 10µA,

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IRF7306TR

bahagian bahagian: 84818

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.6A, Rds On (Maks) @ Id, Vgs: 100 mOhm @ 1.8A, 10V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

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IRF9395MTRPBF

bahagian bahagian: 53923

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 14A, Rds On (Maks) @ Id, Vgs: 7 mOhm @ 14A, 10V, Vgs (th) (Maks) @ Id: 2.4V @ 50µA,

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IRF9910TRPBF

bahagian bahagian: 144138

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 10A, 12A, Rds On (Maks) @ Id, Vgs: 9.3 mOhm @ 12A, 10V, Vgs (th) (Maks) @ Id: 2.55V @ 250µA,

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IPG20N04S4L07AATMA1

bahagian bahagian: 101318

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 20A, Rds On (Maks) @ Id, Vgs: 7.2 mOhm @ 17A, 10V, Vgs (th) (Maks) @ Id: 2.2V @ 30µA,

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SI5504BDC-T1-E3

bahagian bahagian: 163999

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4A, 3.7A, Rds On (Maks) @ Id, Vgs: 65 mOhm @ 3.1A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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SIS932EDN-T1-GE3

bahagian bahagian: 2519

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6A (Tc), Rds On (Maks) @ Id, Vgs: 22 mOhm @ 10A, 4.5V, Vgs (th) (Maks) @ Id: 1.4V @ 250µA,

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SQJB90EP-T1_GE3

bahagian bahagian: 141525

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 80V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 30A (Tc), Rds On (Maks) @ Id, Vgs: 21.5 mOhm @ 10A, 10V, Vgs (th) (Maks) @ Id: 3.5V @ 250µA,

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SI4564DY-T1-GE3

bahagian bahagian: 118890

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 10A, 9.2A, Rds On (Maks) @ Id, Vgs: 17.5 mOhm @ 8A, 10V, Vgs (th) (Maks) @ Id: 2V @ 250µA,

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SQ4920EY-T1_GE3

bahagian bahagian: 97887

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8A, Rds On (Maks) @ Id, Vgs: 14.5 mOhm @ 6A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

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SI3993CDV-T1-GE3

bahagian bahagian: 136053

Jenis FET: 2 P-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.9A, Rds On (Maks) @ Id, Vgs: 111 mOhm @ 2.5A, 10V, Vgs (th) (Maks) @ Id: 2.2V @ 250µA,

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SI4559ADY-T1-GE3

bahagian bahagian: 141946

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.3A, 3.9A, Rds On (Maks) @ Id, Vgs: 58 mOhm @ 4.3A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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SI3932DV-T1-GE3

bahagian bahagian: 199469

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.7A, Rds On (Maks) @ Id, Vgs: 58 mOhm @ 3.4A, 10V, Vgs (th) (Maks) @ Id: 2.2V @ 250µA,

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SQ1912AEEH-T1_GE3

bahagian bahagian: 2494

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 800mA (Tc), Rds On (Maks) @ Id, Vgs: 280 mOhm @ 1.2A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

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SIA928DJ-T1-GE3

bahagian bahagian: 170673

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.5A (Tc), Rds On (Maks) @ Id, Vgs: 25 mOhm @ 5A, 10V, Vgs (th) (Maks) @ Id: 2.2V @ 250µA,

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SQJ951EP-T1_GE3

bahagian bahagian: 123902

Jenis FET: 2 P-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 30A, Rds On (Maks) @ Id, Vgs: 17 mOhm @ 7.5A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

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SQ4917EY-T1_GE3

bahagian bahagian: 91342

Jenis FET: 2 P-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8A (Tc), Rds On (Maks) @ Id, Vgs: 48 mOhm @ 4.3A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

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SIA519EDJ-T1-GE3

bahagian bahagian: 128968

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.5A, Rds On (Maks) @ Id, Vgs: 40 mOhm @ 4.2A, 4.5V, Vgs (th) (Maks) @ Id: 1.4V @ 250µA,

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DMN65D8LDW-7

bahagian bahagian: 141176

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 180mA, Rds On (Maks) @ Id, Vgs: 6 Ohm @ 115mA, 10V, Vgs (th) (Maks) @ Id: 2V @ 250µA,

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DMN53D0LDW-7

bahagian bahagian: 110016

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 50V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 360mA, Rds On (Maks) @ Id, Vgs: 1.6 Ohm @ 500mA, 10V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

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ZXMD63C02XTA

bahagian bahagian: 30114

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Rds On (Maks) @ Id, Vgs: 130 mOhm @ 1.7A, 4.5V, Vgs (th) (Maks) @ Id: 700mV @ 250µA (Min),

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DMG1024UV-7

bahagian bahagian: 127188

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.38A, Rds On (Maks) @ Id, Vgs: 450 mOhm @ 600mA, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

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QS8K51TR

bahagian bahagian: 139893

Jenis FET: 2 N-Channel (Dual), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2A,

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QH8MA3TCR

bahagian bahagian: 185267

Jenis FET: N and P-Channel, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 7A, 5.5A, Rds On (Maks) @ Id, Vgs: 29 mOhm @ 7A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 1mA,

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SH8K12TB1

bahagian bahagian: 185191

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5A, Rds On (Maks) @ Id, Vgs: 42 mOhm @ 5A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 1mA,

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UM6K34NTCN

bahagian bahagian: 167601

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, 0.9V Drive, Saliran ke Voltan Sumber (Vdss): 50V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 200mA, Rds On (Maks) @ Id, Vgs: 2.2 Ohm @ 200mA, 4.5V, Vgs (th) (Maks) @ Id: 800mV @ 1mA,

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PMDT290UCE,115

bahagian bahagian: 135417

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 800mA, 550mA, Rds On (Maks) @ Id, Vgs: 380 mOhm @ 500mA, 4.5V, Vgs (th) (Maks) @ Id: 950mV @ 250µA,

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NX3020NAKVYL

bahagian bahagian: 108530

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 200mA, Rds On (Maks) @ Id, Vgs: 4.5 Ohm @ 100mA, 10V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

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NX3020NAKS,115

bahagian bahagian: 147530

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 180mA, Rds On (Maks) @ Id, Vgs: 4.5 Ohm @ 100mA, 10V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

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PMDPB80XP,115

bahagian bahagian: 184951

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, 1.8V Drive, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.7A, Rds On (Maks) @ Id, Vgs: 102 mOhm @ 2.7A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

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