Transistor - FET, MOSFET - RF

A2I08H040GNR1

A2I08H040GNR1

bahagian bahagian: 2571

Jenis Transistor: LDMOS (Dual), Kekerapan: 920MHz, Keuntungan: 30.7dB, Voltan - Ujian: 28V,

Senarai harapan
AFT18S260W31SR3

AFT18S260W31SR3

bahagian bahagian: 785

Jenis Transistor: LDMOS, Kekerapan: 1.88GHz, Keuntungan: 19.6dB, Voltan - Ujian: 28V,

Senarai harapan
A2T27S020GNR1

A2T27S020GNR1

bahagian bahagian: 223

Jenis Transistor: LDMOS, Kekerapan: 400MHz ~ 2.7GHz, Keuntungan: 21dB, Voltan - Ujian: 28V, Peringkat Semasa: 10µA,

Senarai harapan
A2T23H160-24SR3

A2T23H160-24SR3

bahagian bahagian: 988

Jenis Transistor: LDMOS (Dual), Kekerapan: 2.3GHz, Keuntungan: 17.7dB, Voltan - Ujian: 28V,

Senarai harapan
AFT05MS031GNR1

AFT05MS031GNR1

bahagian bahagian: 8693

Jenis Transistor: LDMOS, Kekerapan: 520MHz, Keuntungan: 17.7dB, Voltan - Ujian: 13.6V,

Senarai harapan
AFIC31025NR1

AFIC31025NR1

bahagian bahagian: 200

Jenis Transistor: LDMOS, Kekerapan: 2.7GHz ~ 3.1GHz, Keuntungan: 30dB,

Senarai harapan
AFT05MP075NR1

AFT05MP075NR1

bahagian bahagian: 5597

Jenis Transistor: LDMOS (Dual), Kekerapan: 520MHz, Keuntungan: 18.5dB, Voltan - Ujian: 12.5V,

Senarai harapan
A2T18S260W12NR3

A2T18S260W12NR3

bahagian bahagian: 165

Jenis Transistor: LDMOS, Kekerapan: 1.805GHz ~ 1.88GHz, Keuntungan: 18.7dB, Voltan - Ujian: 28V, Peringkat Semasa: 10µA,

Senarai harapan
AFV09P350-04NR3

AFV09P350-04NR3

bahagian bahagian: 508

Jenis Transistor: LDMOS (Dual), Kekerapan: 920MHz, Keuntungan: 19.5dB, Voltan - Ujian: 48V,

Senarai harapan
A2I25D025GNR1

A2I25D025GNR1

bahagian bahagian: 2963

Jenis Transistor: LDMOS (Dual), Kekerapan: 2.69GHz, Keuntungan: 31.9dB, Voltan - Ujian: 28V,

Senarai harapan
A2T18H410-24SR6

A2T18H410-24SR6

bahagian bahagian: 571

Jenis Transistor: LDMOS (Dual), Kekerapan: 1.81GHz, Keuntungan: 17.4dB, Voltan - Ujian: 28V,

Senarai harapan
AFT20P060-4NR3

AFT20P060-4NR3

bahagian bahagian: 2920

Jenis Transistor: LDMOS (Dual), Kekerapan: 2.17GHz, Keuntungan: 18.9dB, Voltan - Ujian: 28V,

Senarai harapan
A2T18S261W12NR3

A2T18S261W12NR3

bahagian bahagian: 206

Jenis Transistor: LDMOS, Kekerapan: 1.805GHz ~ 1.88GHz, Keuntungan: 18.2dB, Voltan - Ujian: 28V, Peringkat Semasa: 10µA,

Senarai harapan
AFV121KGSR5

AFV121KGSR5

bahagian bahagian: 179

Jenis Transistor: LDMOS (Dual), Kekerapan: 960MHz ~ 1.22GHz, Keuntungan: 19.6dB, Voltan - Ujian: 50V,

Senarai harapan
A2I08H040NR1

A2I08H040NR1

bahagian bahagian: 2543

Jenis Transistor: LDMOS (Dual), Kekerapan: 920MHz, Keuntungan: 30.7dB, Voltan - Ujian: 28V,

Senarai harapan
AFT09H310-03SR6

AFT09H310-03SR6

bahagian bahagian: 668

Jenis Transistor: LDMOS, Kekerapan: 920MHz, Keuntungan: 17.9dB, Voltan - Ujian: 28V,

Senarai harapan
AFT09MP055GNR1

AFT09MP055GNR1

bahagian bahagian: 5075

Jenis Transistor: LDMOS, Kekerapan: 870MHz, Keuntungan: 15.7dB, Voltan - Ujian: 12.5V,

Senarai harapan
A2T20H160W04NR3

A2T20H160W04NR3

bahagian bahagian: 1279

Jenis Transistor: LDMOS (Dual), Kekerapan: 1.88GHz ~ 2.025GHz, Keuntungan: 17dB, Voltan - Ujian: 28V, Peringkat Semasa: 10µA,

Senarai harapan
AFT18P350-4S2LR6

AFT18P350-4S2LR6

bahagian bahagian: 637

Jenis Transistor: LDMOS (Dual), Kekerapan: 1.81GHz, Keuntungan: 16.1dB, Voltan - Ujian: 28V,

Senarai harapan
AFT21S140W02SR3

AFT21S140W02SR3

bahagian bahagian: 1104

Jenis Transistor: LDMOS, Kekerapan: 2.14GHz, Keuntungan: 19.3dB, Voltan - Ujian: 28V,

Senarai harapan
AFT21H350W04GSR6

AFT21H350W04GSR6

bahagian bahagian: 561

Jenis Transistor: LDMOS, Kekerapan: 2.11GHz, Keuntungan: 16.4dB, Voltan - Ujian: 28V,

Senarai harapan
AFT09S200W02SR3

AFT09S200W02SR3

bahagian bahagian: 1063

Senarai harapan
A2T07H310-24SR6

A2T07H310-24SR6

bahagian bahagian: 563

Jenis Transistor: LDMOS (Dual), Kekerapan: 880MHz, Keuntungan: 18.6dB, Voltan - Ujian: 28V,

Senarai harapan
AFV121KHSR5

AFV121KHSR5

bahagian bahagian: 213

Jenis Transistor: LDMOS (Dual), Kekerapan: 960MHz ~ 1.22GHz, Keuntungan: 19.6dB, Voltan - Ujian: 50V,

Senarai harapan
AFV09P350-04GNR3

AFV09P350-04GNR3

bahagian bahagian: 547

Jenis Transistor: LDMOS (Dual), Kekerapan: 920MHz, Keuntungan: 19.5dB, Voltan - Ujian: 48V,

Senarai harapan
AFT18S260W31GSR3

AFT18S260W31GSR3

bahagian bahagian: 805

Jenis Transistor: LDMOS, Kekerapan: 1.88GHz, Keuntungan: 19.6dB, Voltan - Ujian: 28V,

Senarai harapan
A2T18S162W31GSR3

A2T18S162W31GSR3

bahagian bahagian: 977

Jenis Transistor: LDMOS, Kekerapan: 1.84GHz, Keuntungan: 20.1dB, Voltan - Ujian: 28V,

Senarai harapan
A2T18H100-25SR3

A2T18H100-25SR3

bahagian bahagian: 1079

Jenis Transistor: LDMOS (Dual), Kekerapan: 1.81GHz, Keuntungan: 18.1dB, Voltan - Ujian: 28V,

Senarai harapan
A2T18S160W31SR3

A2T18S160W31SR3

bahagian bahagian: 948

Jenis Transistor: LDMOS, Kekerapan: 1.88GHz, Keuntungan: 19.9dB, Voltan - Ujian: 28V,

Senarai harapan
AFT18H357-24NR6

AFT18H357-24NR6

bahagian bahagian: 864

Jenis Transistor: LDMOS (Dual), Kekerapan: 1.81GHz, Keuntungan: 17.5dB, Voltan - Ujian: 28V,

Senarai harapan
AFT09MS031NR1

AFT09MS031NR1

bahagian bahagian: 8190

Jenis Transistor: LDMOS, Kekerapan: 870MHz, Keuntungan: 17.2dB, Voltan - Ujian: 13.6V,

Senarai harapan
AFT09S220-02NR3

AFT09S220-02NR3

bahagian bahagian: 1251

Jenis Transistor: LDMOS, Kekerapan: 920MHz, Keuntungan: 19.5dB, Voltan - Ujian: 28V,

Senarai harapan
AFT18S230SR5

AFT18S230SR5

bahagian bahagian: 920

Jenis Transistor: LDMOS, Kekerapan: 1.88GHz, Keuntungan: 19dB, Voltan - Ujian: 28V,

Senarai harapan
A2T14H450-23NR6

A2T14H450-23NR6

bahagian bahagian: 224

Jenis Transistor: LDMOS, Kekerapan: 1.452GHz ~ 1.511GHz, Keuntungan: 18.8dB, Voltan - Ujian: 31V, Peringkat Semasa: 10µA,

Senarai harapan
A2T21S260W12NR3

A2T21S260W12NR3

bahagian bahagian: 140

Jenis Transistor: LDMOS, Kekerapan: 2.11GHz ~ 2.2GHz, Keuntungan: 17.9dB, Voltan - Ujian: 28V, Peringkat Semasa: 10µA,

Senarai harapan
AFT09S282NR3

AFT09S282NR3

bahagian bahagian: 782

Jenis Transistor: LDMOS, Kekerapan: 960MHz, Keuntungan: 20dB, Voltan - Ujian: 28V,

Senarai harapan