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Transistor - FET, MOSFET - RF

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  • Transistor - FET, MOSFET - RF
BF1100,215
NXP USA Inc.

BF1100,215

bahagian bahagian: 6046

Jenis Transistor: N-Channel Dual Gate, Kekerapan: 800MHz, Voltan - Ujian: 9V, Peringkat Semasa: 30mA, Gambar Kebisingan: 2dB,

Senarai harapan
BF1108R,215
NXP USA Inc.

BF1108R,215

bahagian bahagian: 160332

Jenis Transistor: N-Channel, Peringkat Semasa: 10mA,

Senarai harapan
BF908WR,115
NXP USA Inc.

BF908WR,115

bahagian bahagian: 6137

Jenis Transistor: N-Channel Dual Gate, Kekerapan: 200MHz, Voltan - Ujian: 8V, Peringkat Semasa: 40mA, Gambar Kebisingan: 0.6dB,

Senarai harapan
BF1109WR,115
NXP USA Inc.

BF1109WR,115

bahagian bahagian: 6115

Jenis Transistor: N-Channel Dual Gate, Kekerapan: 800MHz, Keuntungan: 20dB, Voltan - Ujian: 9V, Peringkat Semasa: 30mA, Gambar Kebisingan: 1.5dB,

Senarai harapan
BF1202WR,115
NXP USA Inc.

BF1202WR,115

bahagian bahagian: 6099

Jenis Transistor: N-Channel Dual Gate, Kekerapan: 400MHz, Keuntungan: 30.5dB, Voltan - Ujian: 5V, Peringkat Semasa: 30mA, Gambar Kebisingan: 0.9dB,

Senarai harapan
BF1202WR,135
NXP USA Inc.

BF1202WR,135

bahagian bahagian: 6115

Jenis Transistor: N-Channel Dual Gate, Kekerapan: 400MHz, Keuntungan: 30.5dB, Voltan - Ujian: 5V, Peringkat Semasa: 30mA, Gambar Kebisingan: 0.9dB,

Senarai harapan
BF862,215
NXP USA Inc.

BF862,215

bahagian bahagian: 147654

Jenis Transistor: N-Channel JFET, Peringkat Semasa: 25mA,

Senarai harapan
BF862,235
NXP USA Inc.

BF862,235

bahagian bahagian: 124986

Jenis Transistor: N-Channel JFET, Peringkat Semasa: 25mA,

Senarai harapan
BF1100R,215
NXP USA Inc.

BF1100R,215

bahagian bahagian: 6050

Jenis Transistor: N-Channel Dual Gate, Kekerapan: 800MHz, Voltan - Ujian: 9V, Peringkat Semasa: 30mA, Gambar Kebisingan: 2dB,

Senarai harapan
BF1100WR,115
NXP USA Inc.

BF1100WR,115

bahagian bahagian: 6053

Jenis Transistor: N-Channel Dual Gate, Kekerapan: 800MHz, Voltan - Ujian: 9V, Peringkat Semasa: 30mA, Gambar Kebisingan: 2dB,

Senarai harapan
BF991,215
NXP USA Inc.

BF991,215

bahagian bahagian: 6072

Jenis Transistor: N-Channel Dual Gate, Kekerapan: 100MHz, Keuntungan: 29dB, Voltan - Ujian: 10V, Peringkat Semasa: 20mA, Gambar Kebisingan: 0.7dB,

Senarai harapan
BF545C,215
NXP USA Inc.

BF545C,215

bahagian bahagian: 175183

Jenis Transistor: N-Channel JFET, Peringkat Semasa: 25mA,

Senarai harapan
BF994S,215
NXP USA Inc.

BF994S,215

bahagian bahagian: 130743

Jenis Transistor: N-Channel Dual Gate, Kekerapan: 200MHz, Keuntungan: 25dB, Voltan - Ujian: 15V, Peringkat Semasa: 30mA, Gambar Kebisingan: 1dB,

Senarai harapan
BF998,215
NXP USA Inc.

BF998,215

bahagian bahagian: 6044

Jenis Transistor: N-Channel Dual Gate, Kekerapan: 200MHz, Voltan - Ujian: 8V, Peringkat Semasa: 30mA, Gambar Kebisingan: 0.6dB,

Senarai harapan
BF998,235
NXP USA Inc.

BF998,235

bahagian bahagian: 6068

Jenis Transistor: N-Channel Dual Gate, Kekerapan: 200MHz, Voltan - Ujian: 8V, Peringkat Semasa: 30mA, Gambar Kebisingan: 0.6dB,

Senarai harapan
BF1208D,115
NXP USA Inc.

BF1208D,115

bahagian bahagian: 6075

Jenis Transistor: N-Channel Dual Gate, Kekerapan: 400MHz, Keuntungan: 32dB, Voltan - Ujian: 5V, Peringkat Semasa: 30mA, Gambar Kebisingan: 0.9dB,

Senarai harapan
BF1211WR,115
NXP USA Inc.

BF1211WR,115

bahagian bahagian: 6091

Jenis Transistor: N-Channel Dual Gate, Kekerapan: 400MHz, Keuntungan: 29dB, Voltan - Ujian: 5V, Peringkat Semasa: 30mA, Gambar Kebisingan: 0.9dB,

Senarai harapan
BF1212,215
NXP USA Inc.

BF1212,215

bahagian bahagian: 6105

Jenis Transistor: N-Channel Dual Gate, Kekerapan: 400MHz, Keuntungan: 30dB, Voltan - Ujian: 5V, Peringkat Semasa: 30mA, Gambar Kebisingan: 0.9dB,

Senarai harapan
BF909,215
NXP USA Inc.

BF909,215

bahagian bahagian: 6076

Jenis Transistor: N-Channel Dual Gate, Kekerapan: 800MHz, Voltan - Ujian: 5V, Peringkat Semasa: 40mA, Gambar Kebisingan: 2dB,

Senarai harapan
BF909,235
NXP USA Inc.

BF909,235

bahagian bahagian: 6056

Jenis Transistor: N-Channel Dual Gate, Kekerapan: 800MHz, Voltan - Ujian: 5V, Peringkat Semasa: 40mA, Gambar Kebisingan: 2dB,

Senarai harapan
BF1205C,115
NXP USA Inc.

BF1205C,115

bahagian bahagian: 6046

Jenis Transistor: N-Channel Dual Gate, Kekerapan: 400MHz, Keuntungan: 30dB, Voltan - Ujian: 5V, Peringkat Semasa: 30mA, Gambar Kebisingan: 1.3dB,

Senarai harapan
BF1207,115
NXP USA Inc.

BF1207,115

bahagian bahagian: 6121

Jenis Transistor: N-Channel Dual Gate, Kekerapan: 400MHz, Keuntungan: 30dB, Voltan - Ujian: 5V, Peringkat Semasa: 30mA, Gambar Kebisingan: 1.3dB,

Senarai harapan
BF1210,115
NXP USA Inc.

BF1210,115

bahagian bahagian: 6094

Jenis Transistor: N-Channel Dual Gate, Kekerapan: 400MHz, Keuntungan: 31dB, Voltan - Ujian: 5V, Peringkat Semasa: 30mA, Gambar Kebisingan: 0.9dB,

Senarai harapan
BF1211,215
NXP USA Inc.

BF1211,215

bahagian bahagian: 6075

Jenis Transistor: N-Channel Dual Gate, Kekerapan: 400MHz, Keuntungan: 29dB, Voltan - Ujian: 5V, Peringkat Semasa: 30mA, Gambar Kebisingan: 0.9dB,

Senarai harapan
BF1214,115
NXP USA Inc.

BF1214,115

bahagian bahagian: 6075

Jenis Transistor: N-Channel Dual Gate, Kekerapan: 400MHz, Keuntungan: 31dB, Voltan - Ujian: 5V, Peringkat Semasa: 30mA, Gambar Kebisingan: 0.9dB,

Senarai harapan
BF904R,235
NXP USA Inc.

BF904R,235

bahagian bahagian: 6039

Jenis Transistor: N-Channel Dual Gate, Kekerapan: 200MHz, Voltan - Ujian: 5V, Peringkat Semasa: 30mA, Gambar Kebisingan: 1dB,

Senarai harapan
BSS83,215
NXP USA Inc.

BSS83,215

bahagian bahagian: 6046

Jenis Transistor: N-Channel, Peringkat Semasa: 50mA,

Senarai harapan
BSS83,235
NXP USA Inc.

BSS83,235

bahagian bahagian: 6056

Jenis Transistor: N-Channel, Peringkat Semasa: 50mA,

Senarai harapan
BF1202,215
NXP USA Inc.

BF1202,215

bahagian bahagian: 6113

Jenis Transistor: N-Channel Dual Gate, Kekerapan: 400MHz, Keuntungan: 30.5dB, Voltan - Ujian: 5V, Peringkat Semasa: 30mA, Gambar Kebisingan: 0.9dB,

Senarai harapan
BF1102R,115
NXP USA Inc.

BF1102R,115

bahagian bahagian: 6124

Jenis Transistor: N-Channel Dual Gate, Kekerapan: 800MHz, Voltan - Ujian: 5V, Peringkat Semasa: 40mA, Gambar Kebisingan: 2dB,

Senarai harapan
BF1102R,135
NXP USA Inc.

BF1102R,135

bahagian bahagian: 6026

Jenis Transistor: N-Channel Dual Gate, Kekerapan: 800MHz, Voltan - Ujian: 5V, Peringkat Semasa: 40mA, Gambar Kebisingan: 2dB,

Senarai harapan
BF1105WR,135
NXP USA Inc.

BF1105WR,135

bahagian bahagian: 6125

Jenis Transistor: N-Channel Dual Gate, Kekerapan: 800MHz, Keuntungan: 20dB, Voltan - Ujian: 5V, Peringkat Semasa: 30mA, Gambar Kebisingan: 1.7dB,

Senarai harapan
BF1105WR,115
NXP USA Inc.

BF1105WR,115

bahagian bahagian: 6039

Jenis Transistor: N-Channel Dual Gate, Kekerapan: 800MHz, Keuntungan: 20dB, Voltan - Ujian: 5V, Peringkat Semasa: 30mA, Gambar Kebisingan: 1.7dB,

Senarai harapan
BF1204,115
NXP USA Inc.

BF1204,115

bahagian bahagian: 6064

Jenis Transistor: N-Channel Dual Gate, Kekerapan: 400MHz, Keuntungan: 30dB, Voltan - Ujian: 5V, Peringkat Semasa: 30mA, Gambar Kebisingan: 0.9dB,

Senarai harapan
BF1204,135
NXP USA Inc.

BF1204,135

bahagian bahagian: 6109

Jenis Transistor: N-Channel Dual Gate, Kekerapan: 400MHz, Keuntungan: 30dB, Voltan - Ujian: 5V, Peringkat Semasa: 30mA, Gambar Kebisingan: 0.9dB,

Senarai harapan
BF861A,215
NXP USA Inc.

BF861A,215

bahagian bahagian: 173212

Jenis Transistor: N-Channel JFET, Peringkat Semasa: 6.5mA,

Senarai harapan