Transistor - FET, MOSFET - RF

AFT09MS007NT1

AFT09MS007NT1

bahagian bahagian: 31141

Jenis Transistor: LDMOS, Kekerapan: 870MHz, Keuntungan: 15.2dB, Voltan - Ujian: 7.5V,

Senarai harapan
AFT09MS015NT1

AFT09MS015NT1

bahagian bahagian: 20018

Jenis Transistor: LDMOS, Kekerapan: 870MHz, Keuntungan: 17.2dB, Voltan - Ujian: 12.5V,

Senarai harapan
AFT26HW050SR3

AFT26HW050SR3

bahagian bahagian: 1413

Jenis Transistor: LDMOS (Dual), Kekerapan: 2.69GHz, Keuntungan: 14.2dB, Voltan - Ujian: 28V,

Senarai harapan
AFT20P140-4WGNR3

AFT20P140-4WGNR3

bahagian bahagian: 1440

Jenis Transistor: LDMOS (Dual), Kekerapan: 1.88GHz ~ 1.91GHz, Keuntungan: 17.8dB, Voltan - Ujian: 28V,

Senarai harapan
AFT26H250W03SR6

AFT26H250W03SR6

bahagian bahagian: 790

Jenis Transistor: LDMOS, Kekerapan: 2.5GHz, Keuntungan: 14.1dB, Voltan - Ujian: 28V,

Senarai harapan
AFT23S170-13SR3

AFT23S170-13SR3

bahagian bahagian: 1109

Jenis Transistor: LDMOS, Kekerapan: 2.4GHz, Keuntungan: 18.8dB, Voltan - Ujian: 28V,

Senarai harapan
AFT26H050W26SR3

AFT26H050W26SR3

bahagian bahagian: 1719

Jenis Transistor: LDMOS, Kekerapan: 2.69GHz, Keuntungan: 14.2dB, Voltan - Ujian: 28V,

Senarai harapan
AFT26P100-4WSR3

AFT26P100-4WSR3

bahagian bahagian: 1114

Jenis Transistor: LDMOS (Dual), Kekerapan: 2.69GHz, Keuntungan: 15.1dB, Voltan - Ujian: 28V,

Senarai harapan
AFT26HW050GSR3

AFT26HW050GSR3

bahagian bahagian: 1495

Jenis Transistor: LDMOS (Dual), Kekerapan: 2.69GHz, Keuntungan: 14.2dB, Voltan - Ujian: 28V,

Senarai harapan
AFT18HW355SR6

AFT18HW355SR6

bahagian bahagian: 564

Jenis Transistor: LDMOS (Dual), Kekerapan: 1.88GHz, Keuntungan: 15.2dB, Voltan - Ujian: 28V,

Senarai harapan
AFT18HW355SR5

AFT18HW355SR5

bahagian bahagian: 621

Jenis Transistor: LDMOS (Dual), Kekerapan: 1.88GHz, Keuntungan: 15.2dB, Voltan - Ujian: 28V,

Senarai harapan
AFT23H201-24SR6

AFT23H201-24SR6

bahagian bahagian: 6014

Jenis Transistor: LDMOS, Kekerapan: 2.3GHz ~ 2.4GHz, Keuntungan: 15.6dB, Voltan - Ujian: 28V, Peringkat Semasa: 10µA,

Senarai harapan
AFT05MS006NT1

AFT05MS006NT1

bahagian bahagian: 40947

Jenis Transistor: LDMOS, Kekerapan: 520MHz, Keuntungan: 18.3dB, Voltan - Ujian: 7.5V,

Senarai harapan
BF861B,235

BF861B,235

bahagian bahagian: 105184

Jenis Transistor: N-Channel JFET, Peringkat Semasa: 15mA,

Senarai harapan
BF556A,235

BF556A,235

bahagian bahagian: 139040

Jenis Transistor: N-Channel JFET, Peringkat Semasa: 7mA,

Senarai harapan
BF904AR,215

BF904AR,215

bahagian bahagian: 6434

Jenis Transistor: N-Channel Dual Gate, Kekerapan: 200MHz, Voltan - Ujian: 4V, Peringkat Semasa: 30mA, Gambar Kebisingan: 1dB,

Senarai harapan
BF904R,215

BF904R,215

bahagian bahagian: 6363

Jenis Transistor: N-Channel Dual Gate, Kekerapan: 200MHz, Voltan - Ujian: 5V, Peringkat Semasa: 30mA, Gambar Kebisingan: 1dB,

Senarai harapan
BF513,215

BF513,215

bahagian bahagian: 161020

Jenis Transistor: N-Channel JFET, Kekerapan: 100MHz, Voltan - Ujian: 10V, Peringkat Semasa: 30mA, Gambar Kebisingan: 1.5dB,

Senarai harapan
BF1105R,215

BF1105R,215

bahagian bahagian: 100749

Jenis Transistor: N-Channel Dual Gate, Kekerapan: 800MHz, Keuntungan: 20dB, Voltan - Ujian: 5V, Peringkat Semasa: 30mA, Gambar Kebisingan: 1.7dB,

Senarai harapan
BF861C,215

BF861C,215

bahagian bahagian: 115649

Jenis Transistor: N-Channel JFET, Peringkat Semasa: 25mA,

Senarai harapan
BF861B,215

BF861B,215

bahagian bahagian: 194800

Jenis Transistor: N-Channel JFET, Peringkat Semasa: 15mA,

Senarai harapan
BF556A,215

BF556A,215

bahagian bahagian: 163969

Jenis Transistor: N-Channel JFET, Peringkat Semasa: 7mA,

Senarai harapan
BF992,215

BF992,215

bahagian bahagian: 173172

Jenis Transistor: N-Channel Dual Gate, Kekerapan: 200MHz, Voltan - Ujian: 10V, Peringkat Semasa: 40mA, Gambar Kebisingan: 1.2dB,

Senarai harapan
BF1108/L,215

BF1108/L,215

bahagian bahagian: 6393

Jenis Transistor: N-Channel, Peringkat Semasa: 10mA,

Senarai harapan
BLC8G27LS-245AVJ

BLC8G27LS-245AVJ

bahagian bahagian: 6372

Jenis Transistor: LDMOS (Dual), Common Source, Kekerapan: 2.5GHz ~ 2.69GHz, Keuntungan: 14.5dB, Voltan - Ujian: 28V,

Senarai harapan
BLC8G24LS-240AVU

BLC8G24LS-240AVU

bahagian bahagian: 6425

Jenis Transistor: LDMOS (Dual), Kekerapan: 2.3GHz ~ 2.4GHz, Keuntungan: 15dB, Voltan - Ujian: 30V,

Senarai harapan
BLC8G24LS-240AVJ

BLC8G24LS-240AVJ

bahagian bahagian: 6366

Jenis Transistor: LDMOS (Dual), Kekerapan: 2.3GHz ~ 2.4GHz, Keuntungan: 15dB, Voltan - Ujian: 30V,

Senarai harapan
BLF8G22LS-310AVU

BLF8G22LS-310AVU

bahagian bahagian: 4663

Senarai harapan
BLF8G20LS-400PVQ

BLF8G20LS-400PVQ

bahagian bahagian: 6387

Jenis Transistor: LDMOS (Dual), Kekerapan: 1.81GHz ~ 1.88GHz, Keuntungan: 19dB, Voltan - Ujian: 28V,

Senarai harapan
BLP8G10S-45PJ

BLP8G10S-45PJ

bahagian bahagian: 6388

Jenis Transistor: LDMOS (Dual), Kekerapan: 952.5MHz ~ 957.5MHz, Keuntungan: 20.8dB, Voltan - Ujian: 28V,

Senarai harapan
BLP8G10S-45PGJ

BLP8G10S-45PGJ

bahagian bahagian: 6401

Jenis Transistor: LDMOS, Kekerapan: 700MHz ~ 1GHz, Keuntungan: 21dB,

Senarai harapan
BLP7G07S-140P,118

BLP7G07S-140P,118

bahagian bahagian: 4657

Jenis Transistor: LDMOS (Dual), Kekerapan: 700MHz ~ 1GHz, Keuntungan: 20.6dB, Voltan - Ujian: 28V,

Senarai harapan
BLP7G22-10,135

BLP7G22-10,135

bahagian bahagian: 6412

Jenis Transistor: LDMOS, Kekerapan: 700MHz ~ 2.2GHz, Keuntungan: 27dB, Voltan - Ujian: 28V,

Senarai harapan
BLF8G22L-160BV,112

BLF8G22L-160BV,112

bahagian bahagian: 6368

Senarai harapan
BLF6G27LS-50BN,118

BLF6G27LS-50BN,118

bahagian bahagian: 6383

Jenis Transistor: LDMOS (Dual), Kekerapan: 2.5GHz ~ 2.7GHz, Keuntungan: 16.5dB, Voltan - Ujian: 28V, Peringkat Semasa: 12A,

Senarai harapan
BLF6G27LS-50BN,112

BLF6G27LS-50BN,112

bahagian bahagian: 4712

Jenis Transistor: LDMOS (Dual), Kekerapan: 2.5GHz ~ 2.7GHz, Keuntungan: 16.5dB, Voltan - Ujian: 28V, Peringkat Semasa: 12A,

Senarai harapan