Transistor - FET, MOSFET - Susunan

EFC6618R-A-TF

bahagian bahagian: 2949

NTMD2C02R2SG

bahagian bahagian: 2975

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.2A, 3.4A, Rds On (Maks) @ Id, Vgs: 43 mOhm @ 4A, 4.5V, Vgs (th) (Maks) @ Id: 1.2V @ 250µA,

NTMFD4C85NT3G

bahagian bahagian: 32493

Jenis FET: 2 N-Channel (Dual) Asymmetrical, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 15.4A, 29.7A, Rds On (Maks) @ Id, Vgs: 3 mOhm @ 20A, 10V, Vgs (th) (Maks) @ Id: 2.1V @ 250µA,

ECH8601M-P-TL-H

bahagian bahagian: 2975

FDMB3900N

bahagian bahagian: 2995

FDS6984AS

bahagian bahagian: 199659

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.5A, 8.5A, Rds On (Maks) @ Id, Vgs: 31 mOhm @ 5.5A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

EFC6601R-TR

bahagian bahagian: 198703

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, 2.5V Drive,

NVMFD5852NLWFT1G

bahagian bahagian: 76130

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 15A, Rds On (Maks) @ Id, Vgs: 6.9 mOhm @ 20A, 10V, Vgs (th) (Maks) @ Id: 2.4V @ 250µA,

FDPC8013S

bahagian bahagian: 73996

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 13A, 26A, Rds On (Maks) @ Id, Vgs: 6.4 mOhm @ 13A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

FDY2000PZ

bahagian bahagian: 195330

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 350mA, Rds On (Maks) @ Id, Vgs: 1.2 Ohm @ 350mA, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

NTQD6968NR2

bahagian bahagian: 2953

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6.2A, Rds On (Maks) @ Id, Vgs: 22 mOhm @ 7A, 4.5V, Vgs (th) (Maks) @ Id: 1.2V @ 250µA,

FDC6310P

bahagian bahagian: 117394

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.2A, Rds On (Maks) @ Id, Vgs: 125 mOhm @ 2.2A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

NVMFD5483NLWFT3G

bahagian bahagian: 70979

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6.4A, Rds On (Maks) @ Id, Vgs: 36 mOhm @ 15A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

FDMB2307NZ

bahagian bahagian: 191134

Jenis FET: 2 N-Channel (Dual) Common Drain, Ciri FET: Logic Level Gate,

FDPC8016S

bahagian bahagian: 69237

Jenis FET: 2 N-Channel (Dual) Asymmetrical, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 25V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 20A, 35A, Rds On (Maks) @ Id, Vgs: 3.8 mOhm @ 20A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

NVMFD5C672NLWFT1G

bahagian bahagian: 6532

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 12A (Ta), 49A (Tc), Rds On (Maks) @ Id, Vgs: 11.9 mOhm @ 10A, 10V, Vgs (th) (Maks) @ Id: 2.2V @ 30µA,

EMH2604-TL-H

bahagian bahagian: 118126

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4A, 3A, Rds On (Maks) @ Id, Vgs: 45 mOhm @ 4A, 4.5V,

FDME1023PZT

bahagian bahagian: 114825

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.6A, Rds On (Maks) @ Id, Vgs: 142 mOhm @ 2.3A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

FDMA1027P

bahagian bahagian: 148465

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3A, Rds On (Maks) @ Id, Vgs: 120 mOhm @ 3A, 4.5V, Vgs (th) (Maks) @ Id: 1.3V @ 250µA,

NTHD4502NT1G

bahagian bahagian: 147583

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.2A, Rds On (Maks) @ Id, Vgs: 85 mOhm @ 2.9A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

NVMFD5C466NLWFT1G

bahagian bahagian: 251

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 14A (Ta), 52A (Tc), Rds On (Maks) @ Id, Vgs: 7.4 mOhm @ 10A, 10V, Vgs (th) (Maks) @ Id: 2.2V @ 30µA,

FDS4953

bahagian bahagian: 2994

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5A, Rds On (Maks) @ Id, Vgs: 55 mOhm @ 5A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

NVMFD5489NLT1G

bahagian bahagian: 91710

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.5A, Rds On (Maks) @ Id, Vgs: 65 mOhm @ 15A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

NDS8936

bahagian bahagian: 3130

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.3A, Rds On (Maks) @ Id, Vgs: 35 mOhm @ 5.3A, 10V, Vgs (th) (Maks) @ Id: 2.8V @ 250µA,

FDMC8030

bahagian bahagian: 182984

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 12A, Rds On (Maks) @ Id, Vgs: 10 mOhm @ 12A, 10V, Vgs (th) (Maks) @ Id: 2.8V @ 250µA,

SQJ500EP

bahagian bahagian: 2995

FDMB2308PZ

bahagian bahagian: 98641

Jenis FET: 2 P-Channel (Dual) Common Drain, Ciri FET: Logic Level Gate, Rds On (Maks) @ Id, Vgs: 36 mOhm @ 5.7A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

FDMA2002NZ_F130

bahagian bahagian: 3353

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.9A, Rds On (Maks) @ Id, Vgs: 123 mOhm @ 2.9A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

EMH2418R-TL-H

bahagian bahagian: 147303

Jenis FET: 2 N-Channel (Dual) Common Drain, Ciri FET: Logic Level Gate, 2.5V Drive, Saliran ke Voltan Sumber (Vdss): 24V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 9A, Rds On (Maks) @ Id, Vgs: 15 mOhm @ 4A, 4.5V, Vgs (th) (Maks) @ Id: 1.3V @ 1mA,

FDS9933A

bahagian bahagian: 190178

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.8A, Rds On (Maks) @ Id, Vgs: 75 mOhm @ 3.8A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

FDC6506P

bahagian bahagian: 194858

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.8A, Rds On (Maks) @ Id, Vgs: 170 mOhm @ 1.8A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

NVMFD5483NLT1G

bahagian bahagian: 65498

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6.4A, Rds On (Maks) @ Id, Vgs: 36 mOhm @ 15A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

FDC6305N

bahagian bahagian: 129016

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.7A, Rds On (Maks) @ Id, Vgs: 80 mOhm @ 2.7A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

NTUD3129PT5G

bahagian bahagian: 2940

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 140mA, Rds On (Maks) @ Id, Vgs: 5 Ohm @ 100mA, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

NVMFD5875NLT1G

bahagian bahagian: 155747

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 7A, Rds On (Maks) @ Id, Vgs: 33 mOhm @ 7.5A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

FDMS3668S

bahagian bahagian: 82251

Jenis FET: 2 N-Channel (Dual) Asymmetrical, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 13A, 18A, Rds On (Maks) @ Id, Vgs: 8 mOhm @ 13A, 10V, Vgs (th) (Maks) @ Id: 2.7V @ 250µA,