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Transistor - Bipolar (BJT) - Tunggal, Pra Bias

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  • Transistor - Bipolar (BJT) - Tunggal, Pra Bias
RN2404TE85LF
Toshiba Semiconductor and Storage

RN2404TE85LF

bahagian bahagian: 1976

Jenis Transistor: PNP - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 47 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

Senarai harapan
RN1402S,LF
Toshiba Semiconductor and Storage

RN1402S,LF

bahagian bahagian: 1953

Jenis Transistor: NPN - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 10 kOhms, Perintang - Pangkalan Pemancar (R2): 10 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V,

Senarai harapan
RN2104MFV,L3F
Toshiba Semiconductor and Storage

RN2104MFV,L3F

bahagian bahagian: 1980

Jenis Transistor: PNP - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 47 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

Senarai harapan
RN2402S,LF(D
Toshiba Semiconductor and Storage

RN2402S,LF(D

bahagian bahagian: 1961

Jenis Transistor: PNP - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 10 kOhms, Perintang - Pangkalan Pemancar (R2): 10 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V,

Senarai harapan
RN2106(T5L,F,T)
Toshiba Semiconductor and Storage

RN2106(T5L,F,T)

bahagian bahagian: 1986

Jenis Transistor: PNP - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 4.7 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

Senarai harapan
RN1104CT(TPL3)
Toshiba Semiconductor and Storage

RN1104CT(TPL3)

bahagian bahagian: 1925

Jenis Transistor: NPN - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 50mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 20V, Perintang - Pangkalan (R1): 47 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V,

Senarai harapan
RN2111CT(TPL3)
Toshiba Semiconductor and Storage

RN2111CT(TPL3)

bahagian bahagian: 2043

Jenis Transistor: PNP - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 50mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 20V, Perintang - Pangkalan (R1): 10 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V,

Senarai harapan
RN1105ACT(TPL3)
Toshiba Semiconductor and Storage

RN1105ACT(TPL3)

bahagian bahagian: 1932

Jenis Transistor: NPN - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 80mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 2.2 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

Senarai harapan
RN1406S,LF(D
Toshiba Semiconductor and Storage

RN1406S,LF(D

bahagian bahagian: 1944

Jenis Transistor: NPN - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 4.7 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

Senarai harapan
RN1108(T5L,F,T)
Toshiba Semiconductor and Storage

RN1108(T5L,F,T)

bahagian bahagian: 2027

Jenis Transistor: NPN - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 22 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

Senarai harapan
RN2108ACT(TPL3)
Toshiba Semiconductor and Storage

RN2108ACT(TPL3)

bahagian bahagian: 1975

Jenis Transistor: PNP - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 80mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 22 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

Senarai harapan
RN1316,LF
Toshiba Semiconductor and Storage

RN1316,LF

bahagian bahagian: 199880

Jenis Transistor: NPN - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 4.7 kOhms, Perintang - Pangkalan Pemancar (R2): 10 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V,

Senarai harapan
RN2113CT(TPL3)
Toshiba Semiconductor and Storage

RN2113CT(TPL3)

bahagian bahagian: 1959

Jenis Transistor: PNP - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 50mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 20V, Perintang - Pangkalan (R1): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V,

Senarai harapan
RN1108ACT(TPL3)
Toshiba Semiconductor and Storage

RN1108ACT(TPL3)

bahagian bahagian: 1901

Jenis Transistor: NPN - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 80mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 22 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

Senarai harapan
RN2112,LF(CT
Toshiba Semiconductor and Storage

RN2112,LF(CT

bahagian bahagian: 9941

Jenis Transistor: PNP - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 22 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V,

Senarai harapan
RN2103MFV,L3F
Toshiba Semiconductor and Storage

RN2103MFV,L3F

bahagian bahagian: 1966

Jenis Transistor: PNP - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 22 kOhms, Perintang - Pangkalan Pemancar (R2): 22 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V,

Senarai harapan
RN1103CT(TPL3)
Toshiba Semiconductor and Storage

RN1103CT(TPL3)

bahagian bahagian: 1955

Jenis Transistor: NPN - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 50mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 20V, Perintang - Pangkalan (R1): 22 kOhms, Perintang - Pangkalan Pemancar (R2): 22 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V,

Senarai harapan
RN1413(TE85L,F)
Toshiba Semiconductor and Storage

RN1413(TE85L,F)

bahagian bahagian: 169265

Jenis Transistor: NPN - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V,

Senarai harapan
RN1111ACT(TPL3)
Toshiba Semiconductor and Storage

RN1111ACT(TPL3)

bahagian bahagian: 1945

Jenis Transistor: NPN - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 80mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 10 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V,

Senarai harapan
RN2118(T5L,F,T)
Toshiba Semiconductor and Storage

RN2118(T5L,F,T)

bahagian bahagian: 1956

Jenis Transistor: PNP - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 47 kOhms, Perintang - Pangkalan Pemancar (R2): 10 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V,

Senarai harapan
RN1108CT(TPL3)
Toshiba Semiconductor and Storage

RN1108CT(TPL3)

bahagian bahagian: 1979

Jenis Transistor: NPN - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 50mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 20V, Perintang - Pangkalan (R1): 22 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V,

Senarai harapan
RN1106ACT(TPL3)
Toshiba Semiconductor and Storage

RN1106ACT(TPL3)

bahagian bahagian: 2028

Jenis Transistor: NPN - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 80mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 4.7 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

Senarai harapan
RN2102ACT(TPL3)
Toshiba Semiconductor and Storage

RN2102ACT(TPL3)

bahagian bahagian: 1977

Jenis Transistor: PNP - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 80mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 10 kOhms, Perintang - Pangkalan Pemancar (R2): 10 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V,

Senarai harapan
RN2104CT(TPL3)
Toshiba Semiconductor and Storage

RN2104CT(TPL3)

bahagian bahagian: 1987

Jenis Transistor: PNP - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 50mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 20V, Perintang - Pangkalan (R1): 47 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V,

Senarai harapan
RN1109CT(TPL3)
Toshiba Semiconductor and Storage

RN1109CT(TPL3)

bahagian bahagian: 1950

Jenis Transistor: NPN - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 50mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 20V, Perintang - Pangkalan (R1): 47 kOhms, Perintang - Pangkalan Pemancar (R2): 22 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V,

Senarai harapan
RN2104ACT(TPL3)
Toshiba Semiconductor and Storage

RN2104ACT(TPL3)

bahagian bahagian: 2045

Jenis Transistor: PNP - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 80mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 47 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

Senarai harapan
RN2103CT(TPL3)
Toshiba Semiconductor and Storage

RN2103CT(TPL3)

bahagian bahagian: 3230

Jenis Transistor: PNP - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 50mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 20V, Perintang - Pangkalan (R1): 22 kOhms, Perintang - Pangkalan Pemancar (R2): 22 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V,

Senarai harapan
RN1104ACT(TPL3)
Toshiba Semiconductor and Storage

RN1104ACT(TPL3)

bahagian bahagian: 1956

Jenis Transistor: NPN - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 80mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 47 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

Senarai harapan
RN2303(TE85L,F)
Toshiba Semiconductor and Storage

RN2303(TE85L,F)

bahagian bahagian: 126325

Jenis Transistor: PNP - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 22 kOhms, Perintang - Pangkalan Pemancar (R2): 22 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V,

Senarai harapan
RN2107ACT(TPL3)
Toshiba Semiconductor and Storage

RN2107ACT(TPL3)

bahagian bahagian: 2063

Jenis Transistor: PNP - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 80mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 10 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

Senarai harapan
RN1441ATE85LF
Toshiba Semiconductor and Storage

RN1441ATE85LF

bahagian bahagian: 176769

Jenis Transistor: NPN - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 300mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 20V, Perintang - Pangkalan (R1): 5.6 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 200 @ 4mA, 2V,

Senarai harapan
RN2108CT(TPL3)
Toshiba Semiconductor and Storage

RN2108CT(TPL3)

bahagian bahagian: 2026

Jenis Transistor: PNP - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 50mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 20V, Perintang - Pangkalan (R1): 22 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V,

Senarai harapan
RN1101ACT(TPL3)
Toshiba Semiconductor and Storage

RN1101ACT(TPL3)

bahagian bahagian: 1962

Jenis Transistor: NPN - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 80mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 4.7 kOhms, Perintang - Pangkalan Pemancar (R2): 4.7 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V,

Senarai harapan
RN1102MFV,L3F
Toshiba Semiconductor and Storage

RN1102MFV,L3F

bahagian bahagian: 120698

Jenis Transistor: NPN - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 10 kOhms, Perintang - Pangkalan Pemancar (R2): 10 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V,

Senarai harapan
RN1414,LF
Toshiba Semiconductor and Storage

RN1414,LF

bahagian bahagian: 112225

Jenis Transistor: NPN - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 1 kOhms, Perintang - Pangkalan Pemancar (R2): 10 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V,

Senarai harapan
RN2313(TE85L,F)
Toshiba Semiconductor and Storage

RN2313(TE85L,F)

bahagian bahagian: 163677

Jenis Transistor: PNP - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V,

Senarai harapan