Menu
MelayuMelayu
Rfqs / order.
0Rfqs / order.

Transistor - Bipolar (BJT) - Tunggal, Pra Bias

  • Rumah
  •  
  • Transistor - Bipolar (BJT) - Tunggal, Pra Bias
RN1104,LF(CT
Toshiba Semiconductor and Storage

RN1104,LF(CT

bahagian bahagian: 176974

Jenis Transistor: NPN - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 47 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

Senarai harapan
RN1116MFV,L3F
Toshiba Semiconductor and Storage

RN1116MFV,L3F

bahagian bahagian: 1741

Jenis Transistor: NPN - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 4.7 kOhms, Perintang - Pangkalan Pemancar (R2): 10 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V,

Senarai harapan
RN2110ACT(TPL3)
Toshiba Semiconductor and Storage

RN2110ACT(TPL3)

bahagian bahagian: 116110

Jenis Transistor: PNP - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 80mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 4.7 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V,

Senarai harapan
RN1309,LF
Toshiba Semiconductor and Storage

RN1309,LF

bahagian bahagian: 1726

Jenis Transistor: NPN - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 47 kOhms, Perintang - Pangkalan Pemancar (R2): 22 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

Senarai harapan
RN2112ACT(TPL3)
Toshiba Semiconductor and Storage

RN2112ACT(TPL3)

bahagian bahagian: 133617

Jenis Transistor: PNP - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 80mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 22 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V,

Senarai harapan
RN1119MFV,L3F
Toshiba Semiconductor and Storage

RN1119MFV,L3F

bahagian bahagian: 1717

Jenis Transistor: NPN - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 1 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V,

Senarai harapan
RN2421(TE85L,F)
Toshiba Semiconductor and Storage

RN2421(TE85L,F)

bahagian bahagian: 103457

Jenis Transistor: PNP - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 800mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 1 kOhms, Perintang - Pangkalan Pemancar (R2): 1 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 1V,

Senarai harapan
RN1301,LF
Toshiba Semiconductor and Storage

RN1301,LF

bahagian bahagian: 114770

Jenis Transistor: NPN - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 4.7 kOhms, Perintang - Pangkalan Pemancar (R2): 4.7 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V,

Senarai harapan
RN2113ACT(TPL3)
Toshiba Semiconductor and Storage

RN2113ACT(TPL3)

bahagian bahagian: 192815

Jenis Transistor: PNP - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 80mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V,

Senarai harapan
RN1113MFV,L3F
Toshiba Semiconductor and Storage

RN1113MFV,L3F

bahagian bahagian: 1776

Jenis Transistor: NPN - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V,

Senarai harapan
RN2105ACT(TPL3)
Toshiba Semiconductor and Storage

RN2105ACT(TPL3)

bahagian bahagian: 181928

Jenis Transistor: PNP - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 80mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 2.2 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

Senarai harapan
RN2111ACT(TPL3)
Toshiba Semiconductor and Storage

RN2111ACT(TPL3)

bahagian bahagian: 185360

Jenis Transistor: PNP - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 80mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 10 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V,

Senarai harapan
RN1132MFV,L3F
Toshiba Semiconductor and Storage

RN1132MFV,L3F

bahagian bahagian: 1709

Jenis Transistor: NPN - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 200 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V,

Senarai harapan
RN1115MFV,L3F
Toshiba Semiconductor and Storage

RN1115MFV,L3F

bahagian bahagian: 116839

Jenis Transistor: NPN - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 2.2 kOhms, Perintang - Pangkalan Pemancar (R2): 10 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V,

Senarai harapan
RN2103ACT(TPL3)
Toshiba Semiconductor and Storage

RN2103ACT(TPL3)

bahagian bahagian: 125855

Jenis Transistor: PNP - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 80mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 22 kOhms, Perintang - Pangkalan Pemancar (R2): 22 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V,

Senarai harapan
RN1118MFV,L3F
Toshiba Semiconductor and Storage

RN1118MFV,L3F

bahagian bahagian: 3186

Jenis Transistor: NPN - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 47 kOhms, Perintang - Pangkalan Pemancar (R2): 10 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V,

Senarai harapan
RN1406,LF
Toshiba Semiconductor and Storage

RN1406,LF

bahagian bahagian: 138320

Jenis Transistor: NPN - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 4.7 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

Senarai harapan
RN2109MFV,L3F
Toshiba Semiconductor and Storage

RN2109MFV,L3F

bahagian bahagian: 1723

Jenis Transistor: PNP - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 47 kOhms, Perintang - Pangkalan Pemancar (R2): 22 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V,

Senarai harapan
RN1402,LF
Toshiba Semiconductor and Storage

RN1402,LF

bahagian bahagian: 154084

Jenis Transistor: NPN - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 10 kOhms, Perintang - Pangkalan Pemancar (R2): 10 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V,

Senarai harapan