Transistor - FET, MOSFET - Susunan | Produk Semikonduktor Diskrit | 18

19MT050XF

bahagian bahagian: 2704

Jenis FET: 4 N-Channel (H-Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 500V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 31A, Rds On (Maks) @ Id, Vgs: 220 mOhm @ 19A, 10V, Vgs (th) (Maks) @ Id: 6V @ 250µA,

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Vishay Siliconix

SI1033X-T1-GE3

bahagian bahagian: 174190

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 145mA, Rds On (Maks) @ Id, Vgs: 8 Ohm @ 150mA, 4.5V, Vgs (th) (Maks) @ Id: 1.2V @ 250µA,

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Vishay Siliconix

SIA777EDJ-T1-GE3

bahagian bahagian: 187147

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, 12V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.5A, 4.5A, Rds On (Maks) @ Id, Vgs: 225 mOhm @ 1.6A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

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Vishay Siliconix

SI4505DY-T1-E3

bahagian bahagian: 118937

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, 8V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6A, 3.8A, Rds On (Maks) @ Id, Vgs: 18 mOhm @ 7.8A, 10V, Vgs (th) (Maks) @ Id: 1.8V @ 250µA,

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Vishay Siliconix

SI4808DY-T1-E3

bahagian bahagian: 80900

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.7A, Rds On (Maks) @ Id, Vgs: 22 mOhm @ 7.5A, 10V, Vgs (th) (Maks) @ Id: 800mV @ 250µA (Min),

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Vishay Siliconix

SI7962DP-T1-E3

bahagian bahagian: 38892

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 7.1A, Rds On (Maks) @ Id, Vgs: 17 mOhm @ 11.1A, 10V, Vgs (th) (Maks) @ Id: 4.5V @ 250µA,

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Vishay Siliconix

SI7900AEDN-T1-GE3

bahagian bahagian: 139913

Jenis FET: 2 N-Channel (Dual) Common Drain, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6A, Rds On (Maks) @ Id, Vgs: 26 mOhm @ 8.5A, 4.5V, Vgs (th) (Maks) @ Id: 900mV @ 250µA,

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Vishay Siliconix

SUD50NP04-77P-T4E3

bahagian bahagian: 118918

Jenis FET: N and P-Channel, Common Drain, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8A, Rds On (Maks) @ Id, Vgs: 37 mOhm @ 5A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

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Vishay Siliconix

SI6968BEDQ-T1-GE3

bahagian bahagian: 192809

Jenis FET: 2 N-Channel (Dual) Common Drain, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.2A, Rds On (Maks) @ Id, Vgs: 22 mOhm @ 6.5A, 4.5V, Vgs (th) (Maks) @ Id: 1.6V @ 250µA,

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Vishay Siliconix

SI4936CDY-T1-E3

bahagian bahagian: 152475

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.8A, Rds On (Maks) @ Id, Vgs: 40 mOhm @ 5A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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Vishay Siliconix

SI3948DV-T1-GE3

bahagian bahagian: 139953

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Rds On (Maks) @ Id, Vgs: 105 mOhm @ 2.5A, 10V, Vgs (th) (Maks) @ Id: 1V @ 250µA (Min),

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Vishay Siliconix

SI6975DQ-T1-E3

bahagian bahagian: 56765

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 12V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.3A, Rds On (Maks) @ Id, Vgs: 27 mOhm @ 5.1A, 4.5V, Vgs (th) (Maks) @ Id: 450mV @ 5mA (Min),

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Vishay Siliconix

SI6975DQ-T1-GE3

bahagian bahagian: 89660

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 12V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.3A, Rds On (Maks) @ Id, Vgs: 27 mOhm @ 5.1A, 4.5V, Vgs (th) (Maks) @ Id: 450mV @ 5mA (Min),

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Vishay Siliconix

SI6954ADQ-T1-GE3

bahagian bahagian: 102782

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.1A, Rds On (Maks) @ Id, Vgs: 53 mOhm @ 3.4A, 10V, Vgs (th) (Maks) @ Id: 1V @ 250µA (Min),

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Vishay Siliconix

SI7904BDN-T1-GE3

bahagian bahagian: 165688

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6A, Rds On (Maks) @ Id, Vgs: 30 mOhm @ 7.1A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

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Vishay Siliconix

SI4276DY-T1-E3

bahagian bahagian: 139906

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8A, Rds On (Maks) @ Id, Vgs: 15.3 mOhm @ 9.5A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

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Vishay Siliconix

SI4943BDY-T1-GE3

bahagian bahagian: 73684

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6.3A, Rds On (Maks) @ Id, Vgs: 19 mOhm @ 8.4A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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Vishay Siliconix

SI6954ADQ-T1-E3

bahagian bahagian: 197681

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.1A, Rds On (Maks) @ Id, Vgs: 53 mOhm @ 3.4A, 10V, Vgs (th) (Maks) @ Id: 1V @ 250µA (Min),

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Vishay Siliconix

SI8900EDB-T2-E1

bahagian bahagian: 45537

Jenis FET: 2 N-Channel (Dual) Common Drain, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.4A, Vgs (th) (Maks) @ Id: 1V @ 1.1mA,

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Vishay Siliconix

SI7913DN-T1-GE3

bahagian bahagian: 93108

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5A, Rds On (Maks) @ Id, Vgs: 37 mOhm @ 7.4A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

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Vishay Siliconix

SI6968BEDQ-T1-E3

bahagian bahagian: 118914

Jenis FET: 2 N-Channel (Dual) Common Drain, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.2A, Rds On (Maks) @ Id, Vgs: 22 mOhm @ 6.5A, 4.5V, Vgs (th) (Maks) @ Id: 1.6V @ 250µA,

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Vishay Siliconix

SI7904BDN-T1-E3

bahagian bahagian: 165763

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6A, Rds On (Maks) @ Id, Vgs: 30 mOhm @ 7.1A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

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Vishay Siliconix

SI4948BEY-T1-GE3

bahagian bahagian: 125231

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.4A, Rds On (Maks) @ Id, Vgs: 120 mOhm @ 3.1A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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Vishay Siliconix

SI4946BEY-T1-E3

bahagian bahagian: 150097

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6.5A, Rds On (Maks) @ Id, Vgs: 41 mOhm @ 5.3A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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Vishay Siliconix

SI4808DY-T1-GE3

bahagian bahagian: 80857

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.7A, Rds On (Maks) @ Id, Vgs: 22 mOhm @ 7.5A, 10V, Vgs (th) (Maks) @ Id: 800mV @ 250µA (Min),

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Vishay Siliconix

SI3951DV-T1-GE3

bahagian bahagian: 199685

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.7A, Rds On (Maks) @ Id, Vgs: 115 mOhm @ 2.5A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

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Vishay Siliconix

SI7923DN-T1-E3

bahagian bahagian: 101885

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.3A, Rds On (Maks) @ Id, Vgs: 47 mOhm @ 6.4A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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Vishay Siliconix

SI5902BDC-T1-E3

bahagian bahagian: 125159

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4A (Tc), Rds On (Maks) @ Id, Vgs: 65 mOhm @ 3.1A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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Vishay Siliconix

SI5908DC-T1-GE3

bahagian bahagian: 118967

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.4A, Rds On (Maks) @ Id, Vgs: 40 mOhm @ 4.4A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

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Vishay Siliconix

SIZ904DT-T1-GE3

bahagian bahagian: 140725

Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 12A, 16A, Rds On (Maks) @ Id, Vgs: 24 mOhm @ 7.8A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

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Vishay Siliconix

SI7923DN-T1-GE3

bahagian bahagian: 101842

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.3A, Rds On (Maks) @ Id, Vgs: 47 mOhm @ 6.4A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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Vishay Siliconix

SIZ918DT-T1-GE3

bahagian bahagian: 132159

Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 16A, 28A, Rds On (Maks) @ Id, Vgs: 12 mOhm @ 13.8A, 10V, Vgs (th) (Maks) @ Id: 2.2V @ 250µA,

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Vishay Siliconix

SI4505DY-T1-GE3

bahagian bahagian: 118954

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, 8V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6A, 3.8A, Rds On (Maks) @ Id, Vgs: 18 mOhm @ 7.8A, 10V, Vgs (th) (Maks) @ Id: 1.8V @ 250µA,

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Vishay Siliconix

SI7913DN-T1-E3

bahagian bahagian: 93083

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5A, Rds On (Maks) @ Id, Vgs: 37 mOhm @ 7.4A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

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Vishay Siliconix

SI4554DY-T1-GE3

bahagian bahagian: 106365

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8A, Rds On (Maks) @ Id, Vgs: 24 mOhm @ 6.8A, 10V, Vgs (th) (Maks) @ Id: 2.2V @ 250µA,

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Vishay Siliconix

SQ4282EY-T1_GE3

bahagian bahagian: 10808

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8A (Tc), Rds On (Maks) @ Id, Vgs: 12.3 mOhm @ 15A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

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