Transistor - FET, MOSFET - Susunan

UPA2381T1P-E1-A#YW

bahagian bahagian: 3033

FDMC7200S

bahagian bahagian: 199650

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 7A, 13A, Rds On (Maks) @ Id, Vgs: 22 mOhm @ 6A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

NVMFD5C470NT1G

bahagian bahagian: 6526

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 11.7A (Ta), 36A (Tc), Rds On (Maks) @ Id, Vgs: 11.7 mOhm @ 10A, 10V, Vgs (th) (Maks) @ Id: 3.5V @ 250µA,

NTTFS5C658NLTAG

bahagian bahagian: 328

FW389-TL-2WX

bahagian bahagian: 3022

FW217A-TL-2WX

bahagian bahagian: 2947

NTLJD3183CZTAG

bahagian bahagian: 2939

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.6A, 2.2A, Rds On (Maks) @ Id, Vgs: 68 mOhm @ 2A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

FDMC8200

bahagian bahagian: 148681

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8A, 12A, Rds On (Maks) @ Id, Vgs: 20 mOhm @ 6A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

FDMS7620S

bahagian bahagian: 128539

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 10.1A, 12.4A, Rds On (Maks) @ Id, Vgs: 20 mOhm @ 10.1A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

FDMS9600S

bahagian bahagian: 66311

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 12A, 16A, Rds On (Maks) @ Id, Vgs: 8.5 mOhm @ 12A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

FW217A-TL-2W

bahagian bahagian: 198899

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, 4.5V Drive, Saliran ke Voltan Sumber (Vdss): 35V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6A, Rds On (Maks) @ Id, Vgs: 39 mOhm @ 6A, 10V,

NTTFS5C478NLTAG

bahagian bahagian: 6464

EFC4626R-TR

bahagian bahagian: 135891

Jenis FET: 2 N-Channel (Dual) Common Drain, Ciri FET: Logic Level Gate, 2.5V Drive,

SP8J5FU6TB

bahagian bahagian: 68274

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 7A, Rds On (Maks) @ Id, Vgs: 28 mOhm @ 7A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 1mA,

SH8K32TB1

bahagian bahagian: 109582

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.5A, Rds On (Maks) @ Id, Vgs: 65 mOhm @ 4.5A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 1mA,

UM6K31NFHATCN

bahagian bahagian: 9908

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 250mA (Ta), Rds On (Maks) @ Id, Vgs: 2.4 Ohm @ 250mA, 10V, Vgs (th) (Maks) @ Id: 2.3V @ 1mA,

SH8M5TB1

bahagian bahagian: 102075

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6A, 7A, Rds On (Maks) @ Id, Vgs: 30 mOhm @ 6A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 1mA,

SI4670DY-T1-E3

bahagian bahagian: 139946

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 25V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8A, Rds On (Maks) @ Id, Vgs: 23 mOhm @ 7A, 10V, Vgs (th) (Maks) @ Id: 2.2V @ 250µA,

SI5922DU-T1-GE3

bahagian bahagian: 127635

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6A (Tc), Rds On (Maks) @ Id, Vgs: 19.2 mOhm @ 5A, 10V, Vgs (th) (Maks) @ Id: 2.2V @ 250µA,

SIZ348DT-T1-GE3

bahagian bahagian: 277

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 18A (Ta), 30A (Tc), Rds On (Maks) @ Id, Vgs: 7.12 mOhm @ 15A, 10V, Vgs (th) (Maks) @ Id: 2.4V @ 250µA,

SIA931DJ-T1-GE3

bahagian bahagian: 160155

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.5A, Rds On (Maks) @ Id, Vgs: 65 mOhm @ 3A, 10V, Vgs (th) (Maks) @ Id: 2.2V @ 250µA,

SI5904DC-T1-E3

bahagian bahagian: 2972

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.1A, Rds On (Maks) @ Id, Vgs: 75 mOhm @ 3.1A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

GMM3X180-004X2-SMD

bahagian bahagian: 3178

Jenis FET: 6 N-Channel (3-Phase Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 180A, Vgs (th) (Maks) @ Id: 4.5V @ 1mA,

FMP36-015P

bahagian bahagian: 4846

Jenis FET: N and P-Channel, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 150V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 36A, 22A, Rds On (Maks) @ Id, Vgs: 40 mOhm @ 31A, 10V, Vgs (th) (Maks) @ Id: 5.5V @ 250µA,

GMM3X100-01X1-SMDSAM

bahagian bahagian: 3134

Jenis FET: 6 N-Channel (3-Phase Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 90A, Vgs (th) (Maks) @ Id: 4.5V @ 1mA,

DMC1030UFDB-7

bahagian bahagian: 177751

Jenis FET: N and P-Channel Complementary, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 12V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.1A (Ta), 3.9A (Ta), Rds On (Maks) @ Id, Vgs: 34 mOhm @ 4.6A, 4.5V, 59 mOhm @ 3.6A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

DMN3015LSD-13

bahagian bahagian: 166732

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8.4A (Ta), Rds On (Maks) @ Id, Vgs: 15 mOhm @ 12A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

DMP2160UFDBQ-7

bahagian bahagian: 174544

Jenis FET: 2 P-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.8A, Rds On (Maks) @ Id, Vgs: 70 mOhm @ 2.8A, 4.5V, Vgs (th) (Maks) @ Id: 900mV @ 250µA,

DMN63D1LV-13

bahagian bahagian: 219

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 550mA (Ta), Rds On (Maks) @ Id, Vgs: 2 Ohm @ 500mA, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 1mA,

SSM6N48FU,RF

bahagian bahagian: 3013

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 100mA, Rds On (Maks) @ Id, Vgs: 3.2 Ohm @ 10mA, 4V, Vgs (th) (Maks) @ Id: 1.5V @ 100µA,

EPC2111ENGRT

bahagian bahagian: 43248

Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: GaNFET (Gallium Nitride), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 16A (Ta), Rds On (Maks) @ Id, Vgs: 19 mOhm @ 15A, 5V, 8 mOhm @ 15A, 5V, Vgs (th) (Maks) @ Id: 2.5V @ 5mA,

FC8V22040L

bahagian bahagian: 119612

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 24V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8A, Rds On (Maks) @ Id, Vgs: 15 mOhm @ 4A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 1mA,

PMCXB900UELZ

bahagian bahagian: 106017

Jenis FET: N and P-Channel Complementary, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 600mA, Rds On (Maks) @ Id, Vgs: 620 mOhm @ 600mA, 4.5V, Vgs (th) (Maks) @ Id: 950mV @ 250µA,

CTLDM304P-M832DS TR

bahagian bahagian: 191379

Jenis FET: 2 P-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.2A, Rds On (Maks) @ Id, Vgs: 70 mOhm @ 4.2A, 10V, Vgs (th) (Maks) @ Id: 1.3V @ 250µA,

STS8DN6LF6AG

bahagian bahagian: 132133

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8A (Ta), Rds On (Maks) @ Id, Vgs: 24 mOhm @ 4A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

IRFI4212H-117P

bahagian bahagian: 32918

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 11A, Rds On (Maks) @ Id, Vgs: 72.5 mOhm @ 6.6A, 10V, Vgs (th) (Maks) @ Id: 5V @ 250µA,