Transistor - FET, MOSFET - Susunan

FDMC89521L

bahagian bahagian: 82261

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8.2A (Ta), Rds On (Maks) @ Id, Vgs: 17 mOhm @ 8.2A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

NVMFD5C478NT1G

bahagian bahagian: 6477

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 9.8A (Ta), 27A (Tc), Rds On (Maks) @ Id, Vgs: 17 mOhm @ 7.5A, 10V, Vgs (th) (Maks) @ Id: 3.5V @ 20µA,

MVDF2C03HDR2G

bahagian bahagian: 3013

Jenis FET: N and P-Channel Complementary, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.1A, 3A, Rds On (Maks) @ Id, Vgs: 70 mOhm @ 3A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

ECH8662-TL-HX

bahagian bahagian: 3098

FDS9958

bahagian bahagian: 153191

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.9A, Rds On (Maks) @ Id, Vgs: 105 mOhm @ 2.9A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

FDC8602

bahagian bahagian: 148680

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.2A, Rds On (Maks) @ Id, Vgs: 350 mOhm @ 1.2A, 10V, Vgs (th) (Maks) @ Id: 4V @ 250µA,

EFC6618R-A-TF

bahagian bahagian: 2949

NTMD2C02R2SG

bahagian bahagian: 2975

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.2A, 3.4A, Rds On (Maks) @ Id, Vgs: 43 mOhm @ 4A, 4.5V, Vgs (th) (Maks) @ Id: 1.2V @ 250µA,

NTMFD4C85NT3G

bahagian bahagian: 32493

Jenis FET: 2 N-Channel (Dual) Asymmetrical, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 15.4A, 29.7A, Rds On (Maks) @ Id, Vgs: 3 mOhm @ 20A, 10V, Vgs (th) (Maks) @ Id: 2.1V @ 250µA,

DMP3056LSD-13

bahagian bahagian: 196313

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6.9A, Rds On (Maks) @ Id, Vgs: 45 mOhm @ 6A, 10V, Vgs (th) (Maks) @ Id: 2.1V @ 250µA,

DMG1029SV-7

bahagian bahagian: 173094

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 500mA, 360mA, Rds On (Maks) @ Id, Vgs: 1.7 Ohm @ 500mA, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

DMC25D1UVT-13

bahagian bahagian: 110745

Jenis FET: N and P-Channel, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 25V, 12V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 500mA, 3.9A, Rds On (Maks) @ Id, Vgs: 4 Ohm @ 400mA, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

DMP2060UFDB-13

bahagian bahagian: 197487

Jenis FET: 2 P-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.2A, Rds On (Maks) @ Id, Vgs: 90 mOhm @ 2.9A, 4.5V, Vgs (th) (Maks) @ Id: 1.4V @ 250µA,

DMN2014LHAB-7

bahagian bahagian: 140079

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 9A, Rds On (Maks) @ Id, Vgs: 13 mOhm @ 4A, 4.5V, Vgs (th) (Maks) @ Id: 1.1V @ 250µA,

DMC1029UFDB-7

bahagian bahagian: 193190

Jenis FET: N and P-Channel, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 12V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.6A, 3.8A, Rds On (Maks) @ Id, Vgs: 29 mOhm @ 5A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

ZXMP6A16DN8TC

bahagian bahagian: 144095

Jenis FET: 2 P-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.9A, Rds On (Maks) @ Id, Vgs: 85 mOhm @ 2.9A, 10V, Vgs (th) (Maks) @ Id: 1V @ 250µA (Min),

DMNH4026SSD-13

bahagian bahagian: 144862

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Semasa - Saliran Berterusan (Id) @ 25 ° C: 7.5A (Ta), Rds On (Maks) @ Id, Vgs: 24 mOhm @ 6A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

DMN5L06VAK-7

bahagian bahagian: 124182

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 50V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 280mA, Rds On (Maks) @ Id, Vgs: 2 Ohm @ 50mA, 5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

DMC3032LSD-13

bahagian bahagian: 156719

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8.1A, 7A, Rds On (Maks) @ Id, Vgs: 32 mOhm @ 7A, 10V, Vgs (th) (Maks) @ Id: 2.1V @ 250µA,

SI4965DY-T1-GE3

bahagian bahagian: 3019

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 8V, Rds On (Maks) @ Id, Vgs: 21 mOhm @ 8A, 4.5V, Vgs (th) (Maks) @ Id: 450mV @ 250µA (Min),

SI1902CDL-T1-GE3

bahagian bahagian: 181662

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.1A, Rds On (Maks) @ Id, Vgs: 235 mOhm @ 1A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

SIA936EDJ-T1-GE3

bahagian bahagian: 3020

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.5A, Rds On (Maks) @ Id, Vgs: 34 mOhm @ 4A, 4.5V, Vgs (th) (Maks) @ Id: 1.3V @ 250µA,

SQ4532AEY-T1_GE3

bahagian bahagian: 10809

Jenis FET: N and P-Channel, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 7.3A (Tc), 5.3A (Tc), Rds On (Maks) @ Id, Vgs: 31 mOhm @ 4.9A, 10V, 70 mOhm @ 3.5A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

CSD87502Q2

bahagian bahagian: 178572

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5A, Rds On (Maks) @ Id, Vgs: 32.4 mOhm @ 4A, 10V, Vgs (th) (Maks) @ Id: 2V @ 250µA,

CSD86336Q3D

bahagian bahagian: 10837

Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: Logic Level Gate, 5V Drive, Saliran ke Voltan Sumber (Vdss): 25V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 20A (Ta), Rds On (Maks) @ Id, Vgs: 9.1 mOhm @ 20A, 5V, 3.4 mOhm @ 20A, 5V, Vgs (th) (Maks) @ Id: 1.9V @ 250µA, 1.6V @ 250µA,

CSD87335Q3DT

bahagian bahagian: 56706

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 25A, Vgs (th) (Maks) @ Id: 1.9V @ 250µA,

CAS100H12AM1

bahagian bahagian: 3335

Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 1200V (1.2kV), Semasa - Saliran Berterusan (Id) @ 25 ° C: 168A, Rds On (Maks) @ Id, Vgs: 20 mOhm @ 20A, 20V, Vgs (th) (Maks) @ Id: 3.1V @ 50mA,

TSM9926DCS RLG

bahagian bahagian: 10840

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6A (Tc), Rds On (Maks) @ Id, Vgs: 30 mOhm @ 6A, 10V, Vgs (th) (Maks) @ Id: 600mV @ 250µA,

STL36DN6F7

bahagian bahagian: 192116

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 33A (Tc), Rds On (Maks) @ Id, Vgs: 27 mOhm @ 4.5A, 10V, Vgs (th) (Maks) @ Id: 4V @ 250µA,

MMIX2F60N50P3

bahagian bahagian: 257

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 500V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 30A (Tc), Rds On (Maks) @ Id, Vgs: 110 mOhm @ 30A, 10V, Vgs (th) (Maks) @ Id: 5V @ 4mA,

FMM110-015X2F

bahagian bahagian: 4783

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 150V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 53A, Rds On (Maks) @ Id, Vgs: 20 mOhm @ 55A, 10V, Vgs (th) (Maks) @ Id: 4.5V @ 250µA,

EPC2101ENG

bahagian bahagian: 2948

Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: GaNFET (Gallium Nitride), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 9.5A, 38A, Rds On (Maks) @ Id, Vgs: 11.5 mOhm @ 20A, 5V, Vgs (th) (Maks) @ Id: 2.5V @ 2mA,

EPC2100ENGRT

bahagian bahagian: 14216

Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: GaNFET (Gallium Nitride), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 10A (Ta), 40A (Ta), Rds On (Maks) @ Id, Vgs: 8.2 mOhm @ 25A, 5V, 2.1 mOhm @ 25A, 5V, Vgs (th) (Maks) @ Id: 2.5V @ 4mA, 2.5V @ 16mA,

IRF7501TRPBF

bahagian bahagian: 166411

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.4A, Rds On (Maks) @ Id, Vgs: 135 mOhm @ 1.7A, 4.5V, Vgs (th) (Maks) @ Id: 700mV @ 250µA,

IRF7329PBF

bahagian bahagian: 48234

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 12V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 9.2A, Rds On (Maks) @ Id, Vgs: 17 mOhm @ 9.2A, 4.5V, Vgs (th) (Maks) @ Id: 900mV @ 250µA,

SMA5118

bahagian bahagian: 6518

Jenis FET: 6 N-Channel (3-Phase Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 500V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5A, Rds On (Maks) @ Id, Vgs: 1.4 Ohm @ 2.5A, 10V, Vgs (th) (Maks) @ Id: 4V @ 1mA,