Ingatan

S29WS128N0SBFW012

bahagian bahagian: 124

S71PL127JB0BFWQB0F

bahagian bahagian: 5895

S99PL064J0110 P

bahagian bahagian: 6210

S98WS512N0GFW0050

bahagian bahagian: 9582

S29PL032J55BAI120

bahagian bahagian: 5699

Jenis Ingatan: Non-Volatile, Format Memori: FLASH, Teknologi: FLASH - NOR, Saiz Ingatan: 32Mb (2M x 16), Tulis Masa Kitaran - Perkataan, Halaman: 55ns,

QMP25FL064A0LMFI001

bahagian bahagian: 5045

VM29LV040B-120JC

bahagian bahagian: 939

FM22L16-55-TGTR

bahagian bahagian: 2709

Jenis Ingatan: Non-Volatile, Format Memori: FRAM, Teknologi: FRAM (Ferroelectric RAM), Saiz Ingatan: 4Mb (256K x 16), Tulis Masa Kitaran - Perkataan, Halaman: 110ns,

CY7C1380KV33-250AXC

bahagian bahagian: 2464

Jenis Ingatan: Volatile, Format Memori: SRAM, Teknologi: SRAM - Synchronous, Saiz Ingatan: 18Mb (512K x 36), Kekerapan Jam: 250MHz,

QMP125FL216K0PMFI010

bahagian bahagian: 9810

CY7C1312LV18-300BZXI

bahagian bahagian: 157

Jenis Ingatan: Volatile, Format Memori: SRAM, Teknologi: SRAM - Synchronous, QDR II, Saiz Ingatan: 18Mb (1M x 18), Kekerapan Jam: 300MHz,

CY7C1061GE-10BVJXIT

bahagian bahagian: 2920

Jenis Ingatan: Volatile, Format Memori: SRAM, Teknologi: SRAM - Asynchronous, Saiz Ingatan: 16Mb (1M x 16), Tulis Masa Kitaran - Perkataan, Halaman: 10ns,

S29WS128N0LBFA0A0

bahagian bahagian: 9911

CY7C1370KVE33-167AXI

bahagian bahagian: 2555

CY7C1312KV18-250BZI

bahagian bahagian: 2262

S98WS512N0GFW0090G

bahagian bahagian: 416

S98WS768P0GFW0160B

bahagian bahagian: 5071

CY7C1069GN30-10BVXIT

bahagian bahagian: 2464

Jenis Ingatan: Volatile, Format Memori: SRAM, Teknologi: SRAM - Asynchronous, Saiz Ingatan: 16Mb (2M x 8), Tulis Masa Kitaran - Perkataan, Halaman: 10ns,

S99DL640D

bahagian bahagian: 603

CY7C1061G18-15ZXIT

bahagian bahagian: 2954

Jenis Ingatan: Volatile, Format Memori: SRAM, Teknologi: SRAM - Asynchronous, Saiz Ingatan: 16Mb (1M x 16), Tulis Masa Kitaran - Perkataan, Halaman: 15ns,

S99400081

bahagian bahagian: 563

S29PL032J60BFI120L

bahagian bahagian: 6027

Jenis Ingatan: Non-Volatile, Format Memori: FLASH, Teknologi: FLASH - NOR, Saiz Ingatan: 32Mb (2M x 16), Tulis Masa Kitaran - Perkataan, Halaman: 60ns,

S70PL254J00BFWA20

bahagian bahagian: 5726

S40410081B1B1W003

bahagian bahagian: 273

CY7C1061G18-15ZSXIT

bahagian bahagian: 2393

Jenis Ingatan: Volatile, Format Memori: SRAM, Teknologi: SRAM - Asynchronous, Saiz Ingatan: 16Mb (1M x 16), Tulis Masa Kitaran - Perkataan, Halaman: 15ns,

S71PL064JA0BFW0P0G

bahagian bahagian: 4608

CY7C1021D-10VXIT

bahagian bahagian: 27568

Jenis Ingatan: Volatile, Format Memori: SRAM, Teknologi: SRAM - Asynchronous, Saiz Ingatan: 1Mb (64K x 16), Tulis Masa Kitaran - Perkataan, Halaman: 10ns,

CY7C1061G30-10BV1XE

bahagian bahagian: 3568

CY7C1061GE30-10BVXIT

bahagian bahagian: 2994

Jenis Ingatan: Volatile, Format Memori: SRAM, Teknologi: SRAM - Asynchronous, Saiz Ingatan: 16Mb (1M x 16), Tulis Masa Kitaran - Perkataan, Halaman: 10ns,

CY7C1145KV18-400BZXI

bahagian bahagian: 2385

Jenis Ingatan: Volatile, Format Memori: SRAM, Teknologi: SRAM - Synchronous, QDR II+, Saiz Ingatan: 18Mb (512K x 36), Kekerapan Jam: 400MHz,

QMP25FL008A0LMFI001

bahagian bahagian: 5072

CY7C1069GE30-10ZSXI

bahagian bahagian: 2682

Jenis Ingatan: Volatile, Format Memori: SRAM, Teknologi: SRAM - Asynchronous, Saiz Ingatan: 16Mb (2M x 8), Tulis Masa Kitaran - Perkataan, Halaman: 10ns,

QMP29GL512R10TFIR10H

bahagian bahagian: 9897

S71PL064JA0BAW0P0B

bahagian bahagian: 5809

S29WS128N0PBFI0A0

bahagian bahagian: 85

QMP25FL008A0LNFI000

bahagian bahagian: 9872