Ingatan

CY7C1382DV33-167BZI

bahagian bahagian: 3168

Jenis Ingatan: Volatile, Format Memori: SRAM, Teknologi: SRAM - Synchronous, Saiz Ingatan: 18Mb (1M x 18), Kekerapan Jam: 167MHz,

CY7C1320KV18-250BZCT

bahagian bahagian: 3197

Jenis Ingatan: Volatile, Format Memori: SRAM, Teknologi: SRAM - Synchronous, DDR II, Saiz Ingatan: 18Mb (512K x 36), Kekerapan Jam: 250MHz,

CY7C1387D-167BZI

bahagian bahagian: 3120

Jenis Ingatan: Volatile, Format Memori: SRAM, Teknologi: SRAM - Synchronous, Saiz Ingatan: 18Mb (1M x 18), Kekerapan Jam: 167MHz,

CY7C1380KV33-167BZIT

bahagian bahagian: 2990

Jenis Ingatan: Volatile, Format Memori: SRAM, Teknologi: SRAM - Synchronous, Saiz Ingatan: 18Mb (512K x 36), Kekerapan Jam: 167MHz,

CY7C1315KV18-250BZIT

bahagian bahagian: 143

Jenis Ingatan: Volatile, Format Memori: SRAM, Teknologi: SRAM - Synchronous, QDR II, Saiz Ingatan: 18Mb (512K x 36), Kekerapan Jam: 250MHz,

S99-50481

bahagian bahagian: 2556

CY62167EV18LL-55BVI

bahagian bahagian: 3043

Jenis Ingatan: Volatile, Format Memori: SRAM, Teknologi: SRAM - Asynchronous, Saiz Ingatan: 16Mb (1M x 16), Tulis Masa Kitaran - Perkataan, Halaman: 55ns,

CG7905AA

bahagian bahagian: 4505

CG8317AAT

bahagian bahagian: 1751

CG8314AA

bahagian bahagian: 1470

CG8019AA

bahagian bahagian: 2386

CG8105AA

bahagian bahagian: 2420

S30MS01GP25TFW000

bahagian bahagian: 842

S70GL02GS11FHA010

bahagian bahagian: 165

Jenis Ingatan: Non-Volatile, Format Memori: FLASH, Teknologi: FLASH - NOR, Saiz Ingatan: 2Gb (128M x 16),

CG8350AAT

bahagian bahagian: 501

S30MS01GR25TFW010

bahagian bahagian: 8090

IS29GL256S-10DHB02-TR

bahagian bahagian: 7752

Jenis Ingatan: Non-Volatile, Format Memori: FLASH, Teknologi: FLASH - NOR, Saiz Ingatan: 256Mb (32M x 8), Tulis Masa Kitaran - Perkataan, Halaman: 60ns,

S70GL02GT11FHV010

bahagian bahagian: 3453

Jenis Ingatan: Non-Volatile, Format Memori: FLASH, Teknologi: FLASH - NOR, Saiz Ingatan: 2Gb (256M x 8, 128M x 16),

IS29GL128S-10DHV02-TR

bahagian bahagian: 774

Jenis Ingatan: Non-Volatile, Format Memori: FLASH, Teknologi: FLASH - NOR, Saiz Ingatan: 128Mb (16M x 8), Tulis Masa Kitaran - Perkataan, Halaman: 60ns,

CG8316AAT

bahagian bahagian: 1807

IS29GL128S-10DHV01-TR

bahagian bahagian: 7638

Jenis Ingatan: Non-Volatile, Format Memori: FLASH, Teknologi: FLASH - NOR, Saiz Ingatan: 128Mb (16M x 8), Tulis Masa Kitaran - Perkataan, Halaman: 60ns,

CG8273AA

bahagian bahagian: 448

IS29GL128S-10DHB01

bahagian bahagian: 7542

Jenis Ingatan: Non-Volatile, Format Memori: FLASH, Teknologi: FLASH - NOR, Saiz Ingatan: 128Mb (16M x 8), Tulis Masa Kitaran - Perkataan, Halaman: 60ns,

CG8245AA

bahagian bahagian: 2035

CY7C1061G30-10BV1XET

bahagian bahagian: 3920

Jenis Ingatan: Volatile, Format Memori: SRAM, Teknologi: SRAM - Asynchronous, Saiz Ingatan: 16Mb (1M x 16), Tulis Masa Kitaran - Perkataan, Halaman: 10ns,

CY14V104NA-BA45XIT

bahagian bahagian: 3530

Jenis Ingatan: Non-Volatile, Format Memori: NVSRAM, Teknologi: NVSRAM (Non-Volatile SRAM), Saiz Ingatan: 4Mb (256K x 16), Tulis Masa Kitaran - Perkataan, Halaman: 45ns,

CG8120AAT

bahagian bahagian: 1600

S30ML512P50TFI513

bahagian bahagian: 8529

CG7925AM

bahagian bahagian: 2102

S30ML02GP30TFI500

bahagian bahagian: 7947

S25FL128P0XMFI011S

bahagian bahagian: 987

Jenis Ingatan: Non-Volatile, Format Memori: FLASH, Teknologi: FLASH - NOR, Saiz Ingatan: 128Mb (16M x 8), Kekerapan Jam: 104MHz, Tulis Masa Kitaran - Perkataan, Halaman: 3µs,

CG8534AAT

bahagian bahagian: 2018

CG8244AA

bahagian bahagian: 169

S70GL02GT12FHIV20

bahagian bahagian: 143

Jenis Ingatan: Non-Volatile, Format Memori: FLASH, Teknologi: FLASH - NOR, Saiz Ingatan: 2Gb (256M x 8, 128M x 16),

CY62167G18-55BVXI

bahagian bahagian: 4054

Jenis Ingatan: Volatile, Format Memori: SRAM, Teknologi: SRAM - Asynchronous, Saiz Ingatan: 16Mb (2M x 8, 1M x 16), Tulis Masa Kitaran - Perkataan, Halaman: 55ns,

S30ML02GP50TFI013

bahagian bahagian: 7980