Transistor - FET, MOSFET - Susunan

MMDF2C03HDR2G

bahagian bahagian: 3144

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.1A, 3A, Rds On (Maks) @ Id, Vgs: 70 mOhm @ 3A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

EFC8811R-TF

bahagian bahagian: 164408

Jenis FET: 2 N-Channel (Dual) Common Drain, Ciri FET: Logic Level Gate, 2.5V Drive,

NVMFD5C674NLWFT1G

bahagian bahagian: 6508

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 11A (Ta), 42A (Tc), Rds On (Maks) @ Id, Vgs: 14.4 mOhm @ 10A, 10V, Vgs (th) (Maks) @ Id: 2.2V @ 25µA,

NTLUD3A50PZTBG

bahagian bahagian: 190294

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.8A, Rds On (Maks) @ Id, Vgs: 50 mOhm @ 4A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

NVMFD5483NLWFT1G

bahagian bahagian: 63618

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6.4A, Rds On (Maks) @ Id, Vgs: 36 mOhm @ 15A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

FD6M016N03

bahagian bahagian: 2999

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 80A, Rds On (Maks) @ Id, Vgs: 1.6 mOhm @ 40A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

EFC2J017NUZTDG

bahagian bahagian: 166927

Jenis FET: 2 N-Channel (Dual) Common Drain, Ciri FET: Logic Level Gate, 2.5V Drive, Vgs (th) (Maks) @ Id: 1.3V @ 1mA,

FDMS3669S

bahagian bahagian: 164375

Jenis FET: 2 N-Channel (Dual) Asymmetrical, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 13A, 18A, Rds On (Maks) @ Id, Vgs: 10 mOhm @ 13A, 10V, Vgs (th) (Maks) @ Id: 2.7V @ 250µA,

EFC4627R-TR

bahagian bahagian: 182266

Jenis FET: 2 N-Channel (Dual) Common Drain, Ciri FET: Logic Level Gate, 2.5V Drive,

FDG6332C

bahagian bahagian: 126485

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 700mA, 600mA, Rds On (Maks) @ Id, Vgs: 300 mOhm @ 700mA, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

FDC6303N

bahagian bahagian: 175306

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 25V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 680mA, Rds On (Maks) @ Id, Vgs: 450 mOhm @ 500mA, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

FW216A-TL-2WX

bahagian bahagian: 3039

ECH8691-TL-W

bahagian bahagian: 147834

NVMFD5489NLWFT3G

bahagian bahagian: 97513

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.5A, Rds On (Maks) @ Id, Vgs: 65 mOhm @ 15A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

FDS6961A

bahagian bahagian: 151064

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.5A, Rds On (Maks) @ Id, Vgs: 90 mOhm @ 3.5A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

NVMFD5C478NLWFT1G

bahagian bahagian: 6481

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 10.5A (Ta), 29A (Tc), Rds On (Maks) @ Id, Vgs: 14.5 mOhm @ 7.5A, 10V, Vgs (th) (Maks) @ Id: 2.2V @ 20µA,

FDMD8280

bahagian bahagian: 48032

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 80V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 11A, Rds On (Maks) @ Id, Vgs: 8.2 mOhm @ 11A, 10V, Vgs (th) (Maks) @ Id: 4V @ 250µA,

EFC4621R-TR

bahagian bahagian: 191534

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, 2.5V Drive,

FDG6304P-X

bahagian bahagian: 2943

FDZ1905PZ

bahagian bahagian: 141781

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Rds On (Maks) @ Id, Vgs: 126 mOhm @ 1A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

FDS4897AC

bahagian bahagian: 185708

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6.1A, 5.2A, Rds On (Maks) @ Id, Vgs: 26 mOhm @ 6.1A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

NTJD4105CT2G

bahagian bahagian: 142228

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, 8V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 630mA, 775mA, Rds On (Maks) @ Id, Vgs: 375 mOhm @ 630mA, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

EFC2J004NUZTDG

bahagian bahagian: 16565

FDG6335N

bahagian bahagian: 139409

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 700mA, Rds On (Maks) @ Id, Vgs: 300 mOhm @ 700mA, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

FTCO3V455A1

bahagian bahagian: 2644

Jenis FET: 6 N-Channel (3-Phase Bridge), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 150A, Rds On (Maks) @ Id, Vgs: 1.66 mOhm @ 80A, 10V,

FDC6301N_G

bahagian bahagian: 3340

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 25V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 220mA, Rds On (Maks) @ Id, Vgs: 4 Ohm @ 400mA, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

FDG6303N

bahagian bahagian: 133613

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 25V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 500mA, Rds On (Maks) @ Id, Vgs: 450 mOhm @ 500mA, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

NDC7002N

bahagian bahagian: 180782

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 50V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 510mA, Rds On (Maks) @ Id, Vgs: 2 Ohm @ 510mA, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

NTMFD4902NFT1G

bahagian bahagian: 169718

Jenis FET: 2 N-Channel (Dual), Schottky, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 10.3A, 13.3A, Rds On (Maks) @ Id, Vgs: 6.5 mOhm @ 10A, 10V, Vgs (th) (Maks) @ Id: 2.2V @ 250µA,

NTD5C668NLT4G

bahagian bahagian: 10795

Jenis FET: N-Channel, Semasa - Saliran Berterusan (Id) @ 25 ° C: 15A (Ta), 48A (Tc), Rds On (Maks) @ Id, Vgs: 8.9 mOhm @ 25A, 10V, Vgs (th) (Maks) @ Id: 2.1V @ 250µA,

FDG6318PZ

bahagian bahagian: 145958

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 500mA, Rds On (Maks) @ Id, Vgs: 780 mOhm @ 500mA, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

FDG6303N_G

bahagian bahagian: 2999

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 25V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 500mA, Rds On (Maks) @ Id, Vgs: 450 mOhm @ 500mA, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

FQS4903TF

bahagian bahagian: 95372

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 500V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 370mA, Rds On (Maks) @ Id, Vgs: 6.2 Ohm @ 185mA, 10V, Vgs (th) (Maks) @ Id: 4V @ 250µA,

FDMS7608S

bahagian bahagian: 172353

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 12A, 15A, Rds On (Maks) @ Id, Vgs: 10 mOhm @ 12A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

EFC6617R-TF

bahagian bahagian: 3361

FDC6318P

bahagian bahagian: 132159

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 12V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.5A, Rds On (Maks) @ Id, Vgs: 90 mOhm @ 2.5A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,