Transistor - FET, MOSFET - Susunan

VEC2415-TL-W

VEC2415-TL-W

bahagian bahagian: 107431

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, 4V Drive, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3A, Rds On (Maks) @ Id, Vgs: 80 mOhm @ 1.5A, 10V, Vgs (th) (Maks) @ Id: 2.6V @ 1mA,

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FDMS3602S

FDMS3602S

bahagian bahagian: 50082

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 25V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 15A, 26A, Rds On (Maks) @ Id, Vgs: 5.6 mOhm @ 15A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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NTQD6968N

NTQD6968N

bahagian bahagian: 2957

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6.2A, Rds On (Maks) @ Id, Vgs: 22 mOhm @ 7A, 4.5V, Vgs (th) (Maks) @ Id: 1.2V @ 250µA,

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FDMD8580

FDMD8580

bahagian bahagian: 44299

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 80V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 16A (Ta), 82A (Tc), Rds On (Maks) @ Id, Vgs: 4.6 mOhm @ 16A, 10V, Vgs (th) (Maks) @ Id: 4.5V @ 250µA,

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FDS8984_F123

FDS8984_F123

bahagian bahagian: 2990

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NTTFS5C466NLTAG

NTTFS5C466NLTAG

bahagian bahagian: 287

Jenis FET: N-Channel, Semasa - Saliran Berterusan (Id) @ 25 ° C: 14A (Ta), 51A (Tc), Rds On (Maks) @ Id, Vgs: 7.3 mOhm @ 10A, 10V, Vgs (th) (Maks) @ Id: 2.2V @ 250µA,

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FDMC8032L

FDMC8032L

bahagian bahagian: 190294

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 7A, Rds On (Maks) @ Id, Vgs: 20 mOhm @ 7A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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NTZD3155CT5G

NTZD3155CT5G

bahagian bahagian: 3321

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 540mA, 430mA, Rds On (Maks) @ Id, Vgs: 550 mOhm @ 540mA, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

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NTHD4401PT3G

NTHD4401PT3G

bahagian bahagian: 2940

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.1A, Rds On (Maks) @ Id, Vgs: 155 mOhm @ 2.1A, 4.5V, Vgs (th) (Maks) @ Id: 1.2V @ 250µA,

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NVMFD5C478NLT1G

NVMFD5C478NLT1G

bahagian bahagian: 6504

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 10.5A (Ta), 29A (Tc), Rds On (Maks) @ Id, Vgs: 14.5 mOhm @ 7.5A, 10V, Vgs (th) (Maks) @ Id: 2.2V @ 20µA,

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SSD2009ATF

SSD2009ATF

bahagian bahagian: 2953

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 50V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3A, Rds On (Maks) @ Id, Vgs: 130 mOhm @ 3A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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FDG6303N-F169

FDG6303N-F169

bahagian bahagian: 2964

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 25V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 500mA (Ta), Rds On (Maks) @ Id, Vgs: 450 mOhm @ 500mA, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

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NTZD3155CT1H

NTZD3155CT1H

bahagian bahagian: 142970

Jenis FET: N and P-Channel, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 540mA, 430mA, Rds On (Maks) @ Id, Vgs: 550 mOhm @ 540mA, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

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ECH8661-TL-HX

ECH8661-TL-HX

bahagian bahagian: 3018

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FDMD8240L

FDMD8240L

bahagian bahagian: 56888

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 23A, Rds On (Maks) @ Id, Vgs: 2.6 mOhm @ 23A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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FDPC4044

FDPC4044

bahagian bahagian: 42785

Jenis FET: 2 N-Channel (Dual) Common Drain, Ciri FET: Logic Level Gate, Rds On (Maks) @ Id, Vgs: 4.3 mOhm @ 27A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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FDC6432SH

FDC6432SH

bahagian bahagian: 2951

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, 12V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.4A, 2.5A, Rds On (Maks) @ Id, Vgs: 90 mOhm @ 2.4A, 10V, Vgs (th) (Maks) @ Id: 3V @ 1mA,

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NDC7001C

NDC7001C

bahagian bahagian: 161454

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 510mA, 340mA, Rds On (Maks) @ Id, Vgs: 2 Ohm @ 510mA, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

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FDMC7200S

FDMC7200S

bahagian bahagian: 199650

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 7A, 13A, Rds On (Maks) @ Id, Vgs: 22 mOhm @ 6A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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NVMFD5C470NT1G

NVMFD5C470NT1G

bahagian bahagian: 6526

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 11.7A (Ta), 36A (Tc), Rds On (Maks) @ Id, Vgs: 11.7 mOhm @ 10A, 10V, Vgs (th) (Maks) @ Id: 3.5V @ 250µA,

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NTTFS5C658NLTAG

NTTFS5C658NLTAG

bahagian bahagian: 328

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FW389-TL-2WX

FW389-TL-2WX

bahagian bahagian: 3022

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FW217A-TL-2WX

FW217A-TL-2WX

bahagian bahagian: 2947

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NTLJD3183CZTAG

NTLJD3183CZTAG

bahagian bahagian: 2939

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.6A, 2.2A, Rds On (Maks) @ Id, Vgs: 68 mOhm @ 2A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

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FDMC8200

FDMC8200

bahagian bahagian: 148681

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8A, 12A, Rds On (Maks) @ Id, Vgs: 20 mOhm @ 6A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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FDMS7620S

FDMS7620S

bahagian bahagian: 128539

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 10.1A, 12.4A, Rds On (Maks) @ Id, Vgs: 20 mOhm @ 10.1A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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FDMS9600S

FDMS9600S

bahagian bahagian: 66311

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 12A, 16A, Rds On (Maks) @ Id, Vgs: 8.5 mOhm @ 12A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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FW217A-TL-2W

FW217A-TL-2W

bahagian bahagian: 198899

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, 4.5V Drive, Saliran ke Voltan Sumber (Vdss): 35V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6A, Rds On (Maks) @ Id, Vgs: 39 mOhm @ 6A, 10V,

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NTTFS5C478NLTAG

NTTFS5C478NLTAG

bahagian bahagian: 6464

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EFC4626R-TR

EFC4626R-TR

bahagian bahagian: 135891

Jenis FET: 2 N-Channel (Dual) Common Drain, Ciri FET: Logic Level Gate, 2.5V Drive,

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FDMC89521L

FDMC89521L

bahagian bahagian: 82261

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8.2A (Ta), Rds On (Maks) @ Id, Vgs: 17 mOhm @ 8.2A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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NVMFD5C478NT1G

NVMFD5C478NT1G

bahagian bahagian: 6477

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 9.8A (Ta), 27A (Tc), Rds On (Maks) @ Id, Vgs: 17 mOhm @ 7.5A, 10V, Vgs (th) (Maks) @ Id: 3.5V @ 20µA,

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MVDF2C03HDR2G

MVDF2C03HDR2G

bahagian bahagian: 3013

Jenis FET: N and P-Channel Complementary, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.1A, 3A, Rds On (Maks) @ Id, Vgs: 70 mOhm @ 3A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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ECH8662-TL-HX

ECH8662-TL-HX

bahagian bahagian: 3098

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FDS9958

FDS9958

bahagian bahagian: 153191

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.9A, Rds On (Maks) @ Id, Vgs: 105 mOhm @ 2.9A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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FDC8602

FDC8602

bahagian bahagian: 148680

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.2A, Rds On (Maks) @ Id, Vgs: 350 mOhm @ 1.2A, 10V, Vgs (th) (Maks) @ Id: 4V @ 250µA,

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