Transistor - FET, MOSFET - Susunan

NTMFD4C20NT1G

bahagian bahagian: 166740

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 9.1A, 13.7A, Rds On (Maks) @ Id, Vgs: 7.3 mOhm @ 10A, 10V, Vgs (th) (Maks) @ Id: 2.1V @ 250µA,

FDPC5018SG

bahagian bahagian: 62456

Jenis FET: 2 N-Channel (Dual) Asymmetrical, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 17A, 32A, Rds On (Maks) @ Id, Vgs: 5 mOhm @ 17A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

NVMFD5C478NWFT1G

bahagian bahagian: 6501

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 9.8A (Ta), 27A (Tc), Rds On (Maks) @ Id, Vgs: 17 mOhm @ 7.5A, 10V, Vgs (th) (Maks) @ Id: 3.5V @ 20µA,

FDMA6023PZT

bahagian bahagian: 123244

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.6A, Rds On (Maks) @ Id, Vgs: 60 mOhm @ 3.6A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

FDMS3626S

bahagian bahagian: 116036

Jenis FET: 2 N-Channel (Dual) Asymmetrical, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 25V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 17.5A, 25A, Rds On (Maks) @ Id, Vgs: 5 mOhm @ 17.5A, 10V, Vgs (th) (Maks) @ Id: 2V @ 250µA,

FDG6321C

bahagian bahagian: 176555

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 25V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 500mA, 410mA, Rds On (Maks) @ Id, Vgs: 450 mOhm @ 500mA, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

NTMFD4C20NT3G

bahagian bahagian: 182368

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 9.1A, 13.7A, Rds On (Maks) @ Id, Vgs: 7.3 mOhm @ 10A, 10V, Vgs (th) (Maks) @ Id: 2.1V @ 250µA,

FDS89141

bahagian bahagian: 103463

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.5A, Rds On (Maks) @ Id, Vgs: 62 mOhm @ 3.5A, 10V, Vgs (th) (Maks) @ Id: 4V @ 250µA,

NVMFD5852NLT1G

bahagian bahagian: 78313

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 15A, Rds On (Maks) @ Id, Vgs: 6.9 mOhm @ 20A, 10V, Vgs (th) (Maks) @ Id: 2.4V @ 250µA,

FDMS3615S

bahagian bahagian: 105235

Jenis FET: 2 N-Channel (Dual) Asymmetrical, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 25V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 16A, 18A, Rds On (Maks) @ Id, Vgs: 5.8 mOhm @ 16A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

FDWS9420-F085

bahagian bahagian: 172

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 20A (Tc), Rds On (Maks) @ Id, Vgs: 5.8 mOhm @ 20A, 10V, Vgs (th) (Maks) @ Id: 4V @ 250µA,

EFC2J013NUZTDG

bahagian bahagian: 16524

Jenis FET: 2 N-Channel (Dual) Common Drain, Ciri FET: Standard, Vgs (th) (Maks) @ Id: 1.3V @ 1mA,

NDC7003P

bahagian bahagian: 145430

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 340mA, Rds On (Maks) @ Id, Vgs: 5 Ohm @ 340mA, 10V, Vgs (th) (Maks) @ Id: 3.5V @ 250µA,

NTMFD4C85NT1G

bahagian bahagian: 29711

Jenis FET: 2 N-Channel (Dual) Asymmetrical, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 15.4A, 29.7A, Rds On (Maks) @ Id, Vgs: 3 mOhm @ 20A, 10V, Vgs (th) (Maks) @ Id: 2.1V @ 250µA,

NTMFD5C470NLT1G

bahagian bahagian: 6471

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 11A (Ta), 36A (Tc), Rds On (Maks) @ Id, Vgs: 11.5 mOhm @ 5A, 10V, Vgs (th) (Maks) @ Id: 2.2V @ 20µA,

FDMQ8203

bahagian bahagian: 55066

Jenis FET: 2 N and 2 P-Channel (H-Bridge), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 100V, 80V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.4A, 2.6A, Rds On (Maks) @ Id, Vgs: 110 mOhm @ 3A, 10V, Vgs (th) (Maks) @ Id: 4V @ 250µA,

NVMFD5C650NLWFT1G

bahagian bahagian: 9967

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 21A (Ta), 111A (Tc), Rds On (Maks) @ Id, Vgs: 4.2 mOhm @ 20A, 10V, Vgs (th) (Maks) @ Id: 2.2V @ 98µA,

NTGD3133PT1G

bahagian bahagian: 3323

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.6A, Rds On (Maks) @ Id, Vgs: 145 mOhm @ 2.2A, 4.5V, Vgs (th) (Maks) @ Id: 1.4V @ 250µA,

FDS8958B_G

bahagian bahagian: 2939

Jenis FET: N and P-Channel, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6.4A, 4.5A, Rds On (Maks) @ Id, Vgs: 26 mOhm @ 6.4A, 10V, 51 mOhm @ 4.5A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

EFC8822R-TF

bahagian bahagian: 3006

MCH6605-TL-EX

bahagian bahagian: 2947

FDMS3620S

bahagian bahagian: 94876

Jenis FET: 2 N-Channel (Dual) Asymmetrical, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 25V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 17.5A, 38A, Rds On (Maks) @ Id, Vgs: 4.7 mOhm @ 17.5A, 10V, Vgs (th) (Maks) @ Id: 2V @ 250µA,

FDMS8095AC

bahagian bahagian: 54792

Jenis FET: N and P-Channel, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 150V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6.2A, 1A, Rds On (Maks) @ Id, Vgs: 30 mOhm @ 6.2A, 10V, Vgs (th) (Maks) @ Id: 4V @ 250µA,

NVMFD5C680NLWFT1G

bahagian bahagian: 6505

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 7.5A (Ta), 26A (Tc), Rds On (Maks) @ Id, Vgs: 28 mOhm @ 5A, 10V, Vgs (th) (Maks) @ Id: 2.2V @ 13µA,

EFC3C001NUZTCG

bahagian bahagian: 153532

Jenis FET: 2 N-Channel (Dual) Common Drain, Ciri FET: Logic Level Gate, 2.5V Drive, Vgs (th) (Maks) @ Id: 1.3V @ 1mA,

NTMFD4C86NT1G

bahagian bahagian: 26834

Jenis FET: 2 N-Channel (Dual) Asymmetrical, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 11.3A, 18.1A, Rds On (Maks) @ Id, Vgs: 5.4 mOhm @ 30A, 10V, Vgs (th) (Maks) @ Id: 2.2V @ 250µA,

FDS8949-F085

bahagian bahagian: 10816

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6A, Rds On (Maks) @ Id, Vgs: 29 mOhm @ 6A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

FDG6304P

bahagian bahagian: 174228

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 25V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 410mA, Rds On (Maks) @ Id, Vgs: 1.1 Ohm @ 410mA, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

NDS8934

bahagian bahagian: 3124

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.8A, Rds On (Maks) @ Id, Vgs: 70 mOhm @ 3.8A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

FDG6316P

bahagian bahagian: 198667

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 12V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 700mA, Rds On (Maks) @ Id, Vgs: 270 mOhm @ 700mA, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

NVMFD5C470NWFT1G

bahagian bahagian: 6533

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 11.7A (Ta), 36A (Tc), Rds On (Maks) @ Id, Vgs: 11.7 mOhm @ 10A, 10V, Vgs (th) (Maks) @ Id: 3.5V @ 250µA,

NTMD5838NLR2G

bahagian bahagian: 169532

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 7.4A, Rds On (Maks) @ Id, Vgs: 25 mOhm @ 7A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

NVMFD5C446NLWFT1G

bahagian bahagian: 6513

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 25A (Ta), 145A (Tc), Rds On (Maks) @ Id, Vgs: 2.65 mOhm @ 20A, 10V, Vgs (th) (Maks) @ Id: 2.2V @ 90µA,

NTMD6601NR2G

bahagian bahagian: 3001

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 80V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.1A, Rds On (Maks) @ Id, Vgs: 215 mOhm @ 2.2A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

FDMD8260L

bahagian bahagian: 45703

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 15A, Rds On (Maks) @ Id, Vgs: 5.8 mOhm @ 15A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

FDC6304P

bahagian bahagian: 105335

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 25V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 460mA, Rds On (Maks) @ Id, Vgs: 1.1 Ohm @ 500mA, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,