Transistor - FET, MOSFET - Susunan

FDG6301N

bahagian bahagian: 168456

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 25V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 220mA, Rds On (Maks) @ Id, Vgs: 4 Ohm @ 220mA, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

FDC6561AN

bahagian bahagian: 139456

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.5A, Rds On (Maks) @ Id, Vgs: 95 mOhm @ 2.5A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

NVMFD5C680NLT1G

bahagian bahagian: 9923

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 7.5A (Ta), 26A (Tc), Rds On (Maks) @ Id, Vgs: 28 mOhm @ 5A, 10V, Vgs (th) (Maks) @ Id: 2.2V @ 13µA,

FDS8947A

bahagian bahagian: 2987

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4A, Rds On (Maks) @ Id, Vgs: 52 mOhm @ 4A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

FDML7610S

bahagian bahagian: 100177

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 12A, 17A, Rds On (Maks) @ Id, Vgs: 7.5 mOhm @ 12A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

NTJD4152PT2G

bahagian bahagian: 174011

Jenis FET: 2 P-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 880mA, Rds On (Maks) @ Id, Vgs: 260 mOhm @ 880mA, 4.5V, Vgs (th) (Maks) @ Id: 1.2V @ 250µA,

NTMD6N02R2G

bahagian bahagian: 152790

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.92A, Rds On (Maks) @ Id, Vgs: 35 mOhm @ 6A, 4.5V, Vgs (th) (Maks) @ Id: 1.2V @ 250µA,

NVMD6N04R2G

bahagian bahagian: 160815

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.6A, Rds On (Maks) @ Id, Vgs: 34 mOhm @ 5.8A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

NVMFD5C672NLT1G

bahagian bahagian: 262

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 12A (Ta), 49A (Tc), Rds On (Maks) @ Id, Vgs: 11.9 mOhm @ 10A, 10V, Vgs (th) (Maks) @ Id: 2.2V @ 30µA,

FDMD8260LET60

bahagian bahagian: 41547

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 15A, Rds On (Maks) @ Id, Vgs: 5.8 mOhm @ 15A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

NDS9952A

bahagian bahagian: 160596

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.7A, 2.9A, Rds On (Maks) @ Id, Vgs: 80 mOhm @ 1A, 10V, Vgs (th) (Maks) @ Id: 2.8V @ 250µA,

FDMS3622S

bahagian bahagian: 105683

Jenis FET: 2 N-Channel (Dual) Asymmetrical, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 25V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 17.5A, 34A, Rds On (Maks) @ Id, Vgs: 5 mOhm @ 17.5A, 10V, Vgs (th) (Maks) @ Id: 2V @ 250µA,

FDMS3610S

bahagian bahagian: 116056

Jenis FET: 2 N-Channel (Dual) Asymmetrical, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 25V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 17.5A, 30A, Rds On (Maks) @ Id, Vgs: 5 mOhm @ 17.5A, 10V, Vgs (th) (Maks) @ Id: 2V @ 250µA,

FDC6302P

bahagian bahagian: 184685

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 25V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 120mA, Rds On (Maks) @ Id, Vgs: 10 Ohm @ 200mA, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

ECH8649-TL-H

bahagian bahagian: 2942

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 7.5A, Rds On (Maks) @ Id, Vgs: 17 mOhm @ 4A, 4.5V,

ECH8601M-TL-H-P

bahagian bahagian: 2925

Jenis FET: 2 N-Channel (Dual) Common Drain, Ciri FET: Logic Level Gate, 2.5V Drive, Saliran ke Voltan Sumber (Vdss): 24V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8A (Ta), Rds On (Maks) @ Id, Vgs: 23 mOhm @ 4A, 4.5V, Vgs (th) (Maks) @ Id: 1.3V @ 1mA,

FDS9945

bahagian bahagian: 120654

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.5A, Rds On (Maks) @ Id, Vgs: 100 mOhm @ 3.5A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

NTMFD4901NFT1G

bahagian bahagian: 126984

Jenis FET: 2 N-Channel (Dual), Schottky, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 10.3A, 17.9A, Rds On (Maks) @ Id, Vgs: 6.5 mOhm @ 10A, 10V, Vgs (th) (Maks) @ Id: 2.2V @ 250µA,

FDC6327C

bahagian bahagian: 146072

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.7A, 1.9A, Rds On (Maks) @ Id, Vgs: 80 mOhm @ 2.7A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

FDMC8298

bahagian bahagian: 2974

NTMFD5C650NLT1G

bahagian bahagian: 6527

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 21A (Ta), 111A (Tc), Rds On (Maks) @ Id, Vgs: 4.2 mOhm @ 20A, 10V, Vgs (th) (Maks) @ Id: 2.2V @ 98µA,

NVMFD5C446NWFT1G

bahagian bahagian: 6461

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 24A (Ta), 127A (Tc), Rds On (Maks) @ Id, Vgs: 2.9 mOhm @ 30A, 10V, Vgs (th) (Maks) @ Id: 3.5V @ 250µA,

FDMJ1032C

bahagian bahagian: 2986

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.2A, 2.5A, Rds On (Maks) @ Id, Vgs: 90 mOhm @ 3.2A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

FDG6308P

bahagian bahagian: 158700

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 600mA, Rds On (Maks) @ Id, Vgs: 400 mOhm @ 600mA, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

FDG6320C

bahagian bahagian: 131902

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 25V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 220mA, 140mA, Rds On (Maks) @ Id, Vgs: 4 Ohm @ 220mA, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

EFC4622R-R-W-E-TR

bahagian bahagian: 2960

FDS4559

bahagian bahagian: 172345

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.5A, 3.5A, Rds On (Maks) @ Id, Vgs: 55 mOhm @ 4.5A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

NTJD2152PT4

bahagian bahagian: 2980

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 8V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 775mA, Rds On (Maks) @ Id, Vgs: 300 mOhm @ 570mA, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

NVJD4401NT1G

bahagian bahagian: 192220

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 630mA, Rds On (Maks) @ Id, Vgs: 375 mOhm @ 630mA, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

NVMFD5877NLT1G

bahagian bahagian: 171488

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6A, Rds On (Maks) @ Id, Vgs: 39 mOhm @ 7.5A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

NTZD5110NT5G

bahagian bahagian: 3000

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 294mA, Rds On (Maks) @ Id, Vgs: 1.6 Ohm @ 500mA, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

FDR8702H

bahagian bahagian: 3117

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.6A, 2.6A, Rds On (Maks) @ Id, Vgs: 38 mOhm @ 3.6A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

NTLLD4901NFTWG

bahagian bahagian: 132118

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.5A, 6.3A, Rds On (Maks) @ Id, Vgs: 17.4 mOhm @ 9A, 10V, Vgs (th) (Maks) @ Id: 2.2V @ 250µA,

FDC6333C

bahagian bahagian: 131502

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.5A, 2A, Rds On (Maks) @ Id, Vgs: 95 mOhm @ 2.5A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

FDMA3023PZ

bahagian bahagian: 148246

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.9A, Rds On (Maks) @ Id, Vgs: 90 mOhm @ 2.9A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

FDZ1323NZ

bahagian bahagian: 166913

Jenis FET: 2 N-Channel (Dual) Common Drain, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 10A, Rds On (Maks) @ Id, Vgs: 13 mOhm @ 1A, 4.5V, Vgs (th) (Maks) @ Id: 1.2V @ 250µA,