Transistor - FET, MOSFET - Susunan

FDG6306P

bahagian bahagian: 182663

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 600mA, Rds On (Maks) @ Id, Vgs: 420 mOhm @ 600mA, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

NTMFD5C466NLT1G

bahagian bahagian: 6537

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 14A (Ta), 52A (Tc), Rds On (Maks) @ Id, Vgs: 7.4 mOhm @ 10A, 10V, Vgs (th) (Maks) @ Id: 2.2V @ 30µA,

NDS9948

bahagian bahagian: 197045

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.3A, Rds On (Maks) @ Id, Vgs: 250 mOhm @ 2.3A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

FDC6301N

bahagian bahagian: 190563

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 25V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 220mA, Rds On (Maks) @ Id, Vgs: 4 Ohm @ 400mA, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

ECH8654-TL-HX

bahagian bahagian: 2963

FDS8928A

bahagian bahagian: 123375

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.5A, 4A, Rds On (Maks) @ Id, Vgs: 30 mOhm @ 5.5A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

NVMFD5C470NLT1G

bahagian bahagian: 9923

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 11A (Ta), 36A (Tc), Rds On (Maks) @ Id, Vgs: 11.5 mOhm @ 5A, 10V, Vgs (th) (Maks) @ Id: 2.2V @ 20µA,

FDMA3028N

bahagian bahagian: 163003

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.8A, Rds On (Maks) @ Id, Vgs: 68 mOhm @ 3.8A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

FDS9953A

bahagian bahagian: 193867

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.9A, Rds On (Maks) @ Id, Vgs: 130 mOhm @ 1A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

FDMD82100L

bahagian bahagian: 65782

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 7A, Rds On (Maks) @ Id, Vgs: 19.5 mOhm @ 7A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

NTMD6P02R2G

bahagian bahagian: 192373

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.8A, Rds On (Maks) @ Id, Vgs: 33 mOhm @ 6.2A, 4.5V, Vgs (th) (Maks) @ Id: 1.2V @ 250µA,

FDMC8097AC

bahagian bahagian: 84069

Jenis FET: N and P-Channel, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 150V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.4A (Ta), 900mA (Tc), Rds On (Maks) @ Id, Vgs: 155 mOhm @ 2.4A, 10V, Vgs (th) (Maks) @ Id: 4V @ 250µA,

NTHD4508NT1G

bahagian bahagian: 175416

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3A, Rds On (Maks) @ Id, Vgs: 75 mOhm @ 3.1A, 4.5V, Vgs (th) (Maks) @ Id: 1.2V @ 250µA,

FDC6401N

bahagian bahagian: 146944

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3A, Rds On (Maks) @ Id, Vgs: 70 mOhm @ 3A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

FW389-TL-2W

bahagian bahagian: 183608

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, 4V Drive, Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2A, Rds On (Maks) @ Id, Vgs: 225 mOhm @ 2A, 10V,

FDS6986AS_SN00192

bahagian bahagian: 3010

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6.5A, 7.9A, Rds On (Maks) @ Id, Vgs: 29 mOhm @ 6.5A, 10V, 20 mOhm @ 7.9A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA, 3V @ 1mA,

FDC6420C

bahagian bahagian: 172122

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3A, 2.2A, Rds On (Maks) @ Id, Vgs: 70 mOhm @ 3A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

NTMD6N04R2G

bahagian bahagian: 3054

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.6A, Rds On (Maks) @ Id, Vgs: 34 mOhm @ 5.8A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

NVMFD5877NLWFT3G

bahagian bahagian: 181356

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6A, Rds On (Maks) @ Id, Vgs: 39 mOhm @ 7.5A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

FDMQ8403

bahagian bahagian: 56113

Jenis FET: 4 N-Channel (H-Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.1A, Rds On (Maks) @ Id, Vgs: 110 mOhm @ 3A, 10V, Vgs (th) (Maks) @ Id: 4V @ 250µA,

FDS6892A

bahagian bahagian: 168833

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 7.5A, Rds On (Maks) @ Id, Vgs: 18 mOhm @ 7.5A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

NTZD3152PT1G

bahagian bahagian: 122573

Jenis FET: 2 P-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 430mA, Rds On (Maks) @ Id, Vgs: 900 mOhm @ 430mA, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

FDG6317NZ

bahagian bahagian: 187420

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 700mA, Rds On (Maks) @ Id, Vgs: 400 mOhm @ 700mA, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

NTMD4820NR2G

bahagian bahagian: 199876

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.9A, Rds On (Maks) @ Id, Vgs: 20 mOhm @ 7.5A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

EMH2411R-TL-H

bahagian bahagian: 3004

Jenis FET: 2 N-Channel (Dual) Common Drain, Ciri FET: Logic Level Gate, 2.5V Drive, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5A, Rds On (Maks) @ Id, Vgs: 36.5 mOhm @ 2.5A, 4.5V,

FDS6930A

bahagian bahagian: 116150

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.5A, Rds On (Maks) @ Id, Vgs: 40 mOhm @ 5.5A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

NTLTD7900ZR2G

bahagian bahagian: 2926

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6A, Rds On (Maks) @ Id, Vgs: 26 mOhm @ 6.5A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

FDS8984-F085

bahagian bahagian: 10834

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 7A, Rds On (Maks) @ Id, Vgs: 23 mOhm @ 7A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

NVMD3P03R2G

bahagian bahagian: 96099

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.34A, Rds On (Maks) @ Id, Vgs: 85 mOhm @ 3.05A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

FW344A-TL-2WX

bahagian bahagian: 2996

FPF1C2P5BF07A

bahagian bahagian: 1274

Jenis FET: 5 N-Channel (Solar Inverter), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 650V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 36A, Rds On (Maks) @ Id, Vgs: 90 mOhm @ 27A, 10V, Vgs (th) (Maks) @ Id: 3.8V @ 250µA,

FDMA3027PZ

bahagian bahagian: 150954

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.3A, Rds On (Maks) @ Id, Vgs: 87 mOhm @ 3.3A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

FDMA2002NZ

bahagian bahagian: 151018

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.9A, Rds On (Maks) @ Id, Vgs: 123 mOhm @ 2.9A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

NVTJD4001NT1G

bahagian bahagian: 156020

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 250mA, Rds On (Maks) @ Id, Vgs: 1.5 Ohm @ 10mA, 4V, Vgs (th) (Maks) @ Id: 1.5V @ 100µA,

ECH8693R-TL-W

bahagian bahagian: 120579

Jenis FET: 2 N-Channel (Dual) Common Drain, Ciri FET: Logic Level Gate, 2.5V Drive, Saliran ke Voltan Sumber (Vdss): 24V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 14A, Rds On (Maks) @ Id, Vgs: 7 mOhm @ 5A, 4.5V,

NTLUD3A50PZTAG

bahagian bahagian: 190251

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.8A, Rds On (Maks) @ Id, Vgs: 50 mOhm @ 4A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,