Transistor - FET, MOSFET - Susunan

FDMS7602S

bahagian bahagian: 55912

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 12A, 17A, Rds On (Maks) @ Id, Vgs: 7.5 mOhm @ 12A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

NVMFD5C674NLT1G

bahagian bahagian: 108

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 11A (Ta), 42A (Tc), Rds On (Maks) @ Id, Vgs: 14.4 mOhm @ 10A, 10V, Vgs (th) (Maks) @ Id: 2.2V @ 25µA,

FDPC5030SG

bahagian bahagian: 68643

Jenis FET: 2 N-Channel (Dual) Asymmetrical, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 17A, 25A, Rds On (Maks) @ Id, Vgs: 5 mOhm @ 17A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

FDMS3604S

bahagian bahagian: 150402

Jenis FET: 2 N-Channel (Dual) Asymmetrical, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 13A, 23A, Rds On (Maks) @ Id, Vgs: 8 mOhm @ 13A, 10V, Vgs (th) (Maks) @ Id: 2.7V @ 250µA,

FDMD8430

bahagian bahagian: 165

Jenis FET: 2 N-Channel (Dual) Common Source, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 28A (Ta), 95A (Tc), Rds On (Maks) @ Id, Vgs: 2.12 mOhm @ 28A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

FDS6898AZ

bahagian bahagian: 148041

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 9.4A, Rds On (Maks) @ Id, Vgs: 14 mOhm @ 9.4A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

NVTJD4001NT2G

bahagian bahagian: 152238

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 250mA, Rds On (Maks) @ Id, Vgs: 1.5 Ohm @ 10mA, 4V, Vgs (th) (Maks) @ Id: 1.5V @ 100µA,

NTLJD3115PT1G

bahagian bahagian: 178911

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.3A, Rds On (Maks) @ Id, Vgs: 100 mOhm @ 2A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

NVMFD5C462NLWFT1G

bahagian bahagian: 58

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 18A (Ta), 84A (Tc), Rds On (Maks) @ Id, Vgs: 4.7 mOhm @ 10A, 10V, Vgs (th) (Maks) @ Id: 2.2V @ 40µA,

EFC3J018NUZTDG

bahagian bahagian: 158

Jenis FET: 2 N-Channel (Dual) Common Drain, Ciri FET: Logic Level Gate, 2.5V Drive, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 23A (Ta), Rds On (Maks) @ Id, Vgs: 4.7 mOhm @ 5A, 4.5V, Vgs (th) (Maks) @ Id: 1.3V @ 1mA,

NTMFD5C462NLT1G

bahagian bahagian: 129

NTGD4167CT1G

bahagian bahagian: 114403

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.6A, 1.9A, Rds On (Maks) @ Id, Vgs: 90 mOhm @ 2.6A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

FDMS3664S

bahagian bahagian: 180120

Jenis FET: 2 N-Channel (Dual) Asymmetrical, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 13A, 25A, Rds On (Maks) @ Id, Vgs: 8 mOhm @ 13A, 10V, Vgs (th) (Maks) @ Id: 2.7V @ 250µA,

NTJD1155LT1G

bahagian bahagian: 149235

Jenis FET: N and P-Channel, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 8V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.3A, Rds On (Maks) @ Id, Vgs: 175 mOhm @ 1.2A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

FDMD8560L

bahagian bahagian: 41533

Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 22A, 93A, Rds On (Maks) @ Id, Vgs: 3.2 mOhm @ 22A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

EFC4C012NLTDG

bahagian bahagian: 115

Jenis FET: 2 N-Channel (Dual) Common Drain, Ciri FET: Standard, Vgs (th) (Maks) @ Id: 2.2V @ 1mA,

NVMFD5C462NLT1G

bahagian bahagian: 139

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 18A (Ta), 84A (Tc), Rds On (Maks) @ Id, Vgs: 4.7 mOhm @ 10A, 10V, Vgs (th) (Maks) @ Id: 2.2V @ 40µA,

FDMS7700S

bahagian bahagian: 61271

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 12A, 22A, Rds On (Maks) @ Id, Vgs: 7.5 mOhm @ 12A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

ECH8654-TL-H

bahagian bahagian: 186362

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5A, Rds On (Maks) @ Id, Vgs: 38 mOhm @ 3A, 4.5V,

ECH8695R-TL-W

bahagian bahagian: 130870

Jenis FET: 2 N-Channel (Dual) Common Drain, Ciri FET: Logic Level Gate, 2.5V Drive, Saliran ke Voltan Sumber (Vdss): 24V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 11A, Rds On (Maks) @ Id, Vgs: 9.1 mOhm @ 5A, 4.5V, Vgs (th) (Maks) @ Id: 1.3V @ 1mA,

FDMS3606S

bahagian bahagian: 103403

Jenis FET: 2 N-Channel (Dual) Asymmetrical, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 13A, 27A, Rds On (Maks) @ Id, Vgs: 8 mOhm @ 13A, 10V, Vgs (th) (Maks) @ Id: 2.7V @ 250µA,

FW297-TL-2W

bahagian bahagian: 151817

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, 4V Drive, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.5A, Rds On (Maks) @ Id, Vgs: 58 mOhm @ 4.5A, 10V, Vgs (th) (Maks) @ Id: 2.6V @ 1mA,

FDMS3602AS

bahagian bahagian: 95320

Jenis FET: 2 N-Channel (Dual) Asymmetrical, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 25V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 15A, 26A, Rds On (Maks) @ Id, Vgs: 5.6 mOhm @ 15A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

FDMC7208S

bahagian bahagian: 116029

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 12A, 16A, Rds On (Maks) @ Id, Vgs: 9 mOhm @ 12A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

FDMS7600AS

bahagian bahagian: 69548

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 12A, 22A, Rds On (Maks) @ Id, Vgs: 7.5 mOhm @ 12A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

FDMD8680

bahagian bahagian: 74712

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 80V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 66A (Tc), Rds On (Maks) @ Id, Vgs: 4.7 mOhm @ 16A, 10V, Vgs (th) (Maks) @ Id: 4V @ 250µA,

NVMD6P02R2G

bahagian bahagian: 115513

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.8A, Rds On (Maks) @ Id, Vgs: 33 mOhm @ 6.2A, 4.5V, Vgs (th) (Maks) @ Id: 1.2V @ 250µA,

FDMQ86530L

bahagian bahagian: 57140

Jenis FET: 4 N-Channel (H-Bridge), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8A, Rds On (Maks) @ Id, Vgs: 17.5 mOhm @ 8A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

SI4532DY

bahagian bahagian: 183986

Jenis FET: N and P-Channel, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.9A, 3.5A, Rds On (Maks) @ Id, Vgs: 65 mOhm @ 3.9A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

NTLUD4C26NTAG

bahagian bahagian: 108

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 9.1A (Ta), Rds On (Maks) @ Id, Vgs: 21 mOhm @ 6A, 10V, Vgs (th) (Maks) @ Id: 1.1V @ 250µA,

FDS6930B

bahagian bahagian: 174209

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.5A, Rds On (Maks) @ Id, Vgs: 38 mOhm @ 5.5A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

FDS6990A

bahagian bahagian: 143253

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 7.5A, Rds On (Maks) @ Id, Vgs: 18 mOhm @ 7.5A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

NVMFD5485NLT1G

bahagian bahagian: 84490

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.3A, Rds On (Maks) @ Id, Vgs: 44 mOhm @ 15A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

MCH6662-TL-W

bahagian bahagian: 197593

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, 1.8V Drive, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2A, Rds On (Maks) @ Id, Vgs: 160 mOhm @ 1A, 4.5V, Vgs (th) (Maks) @ Id: 1.3V @ 1mA,

FDMS8090

bahagian bahagian: 54867

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 10A, Rds On (Maks) @ Id, Vgs: 13 mOhm @ 10A, 10V, Vgs (th) (Maks) @ Id: 4V @ 250µA,

FDPC8014AS

bahagian bahagian: 56655

Jenis FET: 2 N-Channel (Dual) Asymmetrical, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 25V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 20A, 40A, Rds On (Maks) @ Id, Vgs: 3.8 mOhm @ 20A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,