Transistor - FET, MOSFET - Susunan

FDMA1028NZ-F021

bahagian bahagian: 89

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.7A, Rds On (Maks) @ Id, Vgs: 68 mOhm @ 3.7A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

NTLUD4C26NTBG

bahagian bahagian: 107408

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 9.1A (Ta), Rds On (Maks) @ Id, Vgs: 21 mOhm @ 6A, 10V, Vgs (th) (Maks) @ Id: 1.1V @ 250µA,

NTUD3174NZT5G

bahagian bahagian: 123413

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 220mA (Ta), Rds On (Maks) @ Id, Vgs: 1.5 Ohm @ 100mA, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 100µA,

FDMD8240LET40

bahagian bahagian: 53084

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 24A, Rds On (Maks) @ Id, Vgs: 2.6 mOhm @ 23A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

NTLJD3119CTBG

bahagian bahagian: 189185

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.6A, 2.3A, Rds On (Maks) @ Id, Vgs: 65 mOhm @ 3.8A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

NTUD3169CZT5G

bahagian bahagian: 116437

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 220mA, 200mA, Rds On (Maks) @ Id, Vgs: 1.5 Ohm @ 100mA, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

FQS4900TF

bahagian bahagian: 117878

Jenis FET: N and P-Channel, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 60V, 300V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.3A, 300mA, Rds On (Maks) @ Id, Vgs: 550 mOhm @ 650mA, 10V, Vgs (th) (Maks) @ Id: 1.95V @ 20mA,

NVMFD5C668NLT1G

bahagian bahagian: 46

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 15.5A (Ta), 68A (Tc), Rds On (Maks) @ Id, Vgs: 6.5 mOhm @ 20A, 10V, Vgs (th) (Maks) @ Id: 2V @ 50µA,

FDMS3660AS

bahagian bahagian: 111729

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 13A, 30A, Rds On (Maks) @ Id, Vgs: 8 mOhm @ 13A, 10V, Vgs (th) (Maks) @ Id: 2.7V @ 250µA,

ECH8690-TL-H

bahagian bahagian: 156738

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, 4V Drive, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.7A, 3.5A, Rds On (Maks) @ Id, Vgs: 55 mOhm @ 2A, 10V,

NTMD6N03R2G

bahagian bahagian: 188884

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6A, Rds On (Maks) @ Id, Vgs: 32 mOhm @ 6A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

ECH8657-TL-H

bahagian bahagian: 165958

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 35V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.5A, Rds On (Maks) @ Id, Vgs: 59 mOhm @ 2A, 10V,

NVMFD5C466NWFT1G

bahagian bahagian: 175

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 14A (Ta), 49A (Tc), Rds On (Maks) @ Id, Vgs: 8.1 mOhm @ 15A, 10V, Vgs (th) (Maks) @ Id: 3.5V @ 250µA,

NTZD3158PT1G

bahagian bahagian: 177029

Jenis FET: 2 P-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 430mA, Rds On (Maks) @ Id, Vgs: 900 mOhm @ 430mA, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

FDMS3600AS

bahagian bahagian: 89370

Jenis FET: 2 N-Channel (Dual) Asymmetrical, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 25V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 15A, 30A, Rds On (Maks) @ Id, Vgs: 5.6 mOhm @ 15A, 10V, Vgs (th) (Maks) @ Id: 2.7V @ 250µA,

ECH8668-TL-H

bahagian bahagian: 150790

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 7.5A, 5A, Rds On (Maks) @ Id, Vgs: 17 mOhm @ 4A, 4.5V,

NVMD4N03R2G

bahagian bahagian: 187212

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4A, Rds On (Maks) @ Id, Vgs: 60 mOhm @ 4A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

FDMA1023PZ-F106

bahagian bahagian: 63

Jenis FET: 2 P-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.7A (Ta), Rds On (Maks) @ Id, Vgs: 72 mOhm @ 3.7A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

NTMD3P03R2G

bahagian bahagian: 172029

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.34A, Rds On (Maks) @ Id, Vgs: 85 mOhm @ 3.05A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

FDD3510H

bahagian bahagian: 147680

Jenis FET: N and P-Channel, Common Drain, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 80V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.3A, 2.8A, Rds On (Maks) @ Id, Vgs: 80 mOhm @ 4.3A, 10V, Vgs (th) (Maks) @ Id: 4V @ 250µA,

FDS6900AS

bahagian bahagian: 159056

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6.9A, 8.2A, Rds On (Maks) @ Id, Vgs: 27 mOhm @ 6.9A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

FDS6898A

bahagian bahagian: 128074

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 9.4A, Rds On (Maks) @ Id, Vgs: 14 mOhm @ 9.4A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

FDMB3900AN

bahagian bahagian: 118545

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 25V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 7A, Rds On (Maks) @ Id, Vgs: 23 mOhm @ 7A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

FDS6875

bahagian bahagian: 133470

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6A, Rds On (Maks) @ Id, Vgs: 30 mOhm @ 6A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

MCH6663-TL-W

bahagian bahagian: 154760

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, 4V Drive, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.8A, 1.5A, Rds On (Maks) @ Id, Vgs: 188 mOhm @ 900mA, 10V, Vgs (th) (Maks) @ Id: 2.6V @ 1mA,

FDS6912A

bahagian bahagian: 171009

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6A, Rds On (Maks) @ Id, Vgs: 28 mOhm @ 6A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

FDMD86100

bahagian bahagian: 131

Jenis FET: 2 N-Channel (Dual) Common Source, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 10A, Rds On (Maks) @ Id, Vgs: 10.5 mOhm @ 10A, 10V, Vgs (th) (Maks) @ Id: 4V @ 250µA,

NTLLD4951NFTWG

bahagian bahagian: 61646

Jenis FET: 2 N-Channel (Dual) Asymmetrical, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.5A, 6.3A, Rds On (Maks) @ Id, Vgs: 17.4 mOhm @ 9A, 10V, Vgs (th) (Maks) @ Id: 2.2V @ 250µA,

FDS6986AS

bahagian bahagian: 190163

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6.5A, 7.9A, Rds On (Maks) @ Id, Vgs: 29 mOhm @ 6.5A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

NVMFD5C446NT1G

bahagian bahagian: 62

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 24A (Ta), 127A (Tc), Rds On (Maks) @ Id, Vgs: 2.9 mOhm @ 30A, 10V, Vgs (th) (Maks) @ Id: 3.5V @ 250µA,

VEC2616-TL-W

bahagian bahagian: 195236

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, 4V Drive, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3A, 2.5A, Rds On (Maks) @ Id, Vgs: 80 mOhm @ 1.5A, 10V, Vgs (th) (Maks) @ Id: 2.6V @ 1mA,

FDPC8014S

bahagian bahagian: 59646

Jenis FET: 2 N-Channel (Dual) Asymmetrical, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 25V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 20A, 41A, Rds On (Maks) @ Id, Vgs: 3.8 mOhm @ 20A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

EFC8822R-X-TF

bahagian bahagian: 2926

MCH6606-TL-EX

bahagian bahagian: 3025

NTMFD4901NFT3G

bahagian bahagian: 74945

Jenis FET: 2 N-Channel (Dual), Schottky, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 10.3A, 17.9A, Rds On (Maks) @ Id, Vgs: 6.5 mOhm @ 10A, 10V, Vgs (th) (Maks) @ Id: 2.2V @ 250µA,

NTMFD5C674NLT1G

bahagian bahagian: 6527

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 11A (Ta), 42A (Tc), Rds On (Maks) @ Id, Vgs: 14.4 mOhm @ 10A, 10V, Vgs (th) (Maks) @ Id: 2.2V @ 25µA,