Diod - Pembetulan - Bujang

Rumah
Diod - Pembetulan - Bujang

Toshiba Semiconductor and Storage

1SS387CT,L3F

bahagian bahagian: 117530

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 80V, Semasa - Rata-rata Disahkan (Io): 100mA, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 100mA, Kepantasan: Small Signal =< 200mA (Io), Any Speed, Masa Pemulihan Berbalik (trr): 1.6ns,

Senarai harapan

Toshiba Semiconductor and Storage

1SS190TE85LF

bahagian bahagian: 116

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 80V, Semasa - Rata-rata Disahkan (Io): 100mA, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 100mA, Kepantasan: Small Signal =< 200mA (Io), Any Speed, Masa Pemulihan Berbalik (trr): 4ns,

Senarai harapan

Toshiba Semiconductor and Storage

1SS187,LF

bahagian bahagian: 131

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 80V, Semasa - Rata-rata Disahkan (Io): 100mA, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 100mA, Kepantasan: Small Signal =< 200mA (Io), Any Speed, Masa Pemulihan Berbalik (trr): 4ns,

Senarai harapan

Toshiba Semiconductor and Storage

1SS416CT,L3F

bahagian bahagian: 111

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 30V, Semasa - Rata-rata Disahkan (Io): 100mA, Voltan - Maju (Vf) (Maks) @ Sekiranya: 500mV @ 100mA, Kepantasan: Small Signal =< 200mA (Io), Any Speed,

Senarai harapan

1SS307(TE85L,F)

Toshiba Semiconductor and Storage

1SS307(TE85L,F)

bahagian bahagian: 161

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 30V, Semasa - Rata-rata Disahkan (Io): 100mA, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.3V @ 100mA, Kepantasan: Small Signal =< 200mA (Io), Any Speed,

Senarai harapan

Toshiba Semiconductor and Storage

1SS193,LF

bahagian bahagian: 176168

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 80V, Semasa - Rata-rata Disahkan (Io): 100mA, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 100mA, Kepantasan: Small Signal =< 200mA (Io), Any Speed, Masa Pemulihan Berbalik (trr): 4ns,

Senarai harapan

Toshiba Semiconductor and Storage

1SS413CT,L3F

bahagian bahagian: 156192

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 20V, Semasa - Rata-rata Disahkan (Io): 50mA, Voltan - Maju (Vf) (Maks) @ Sekiranya: 550mV @ 50mA, Kepantasan: Small Signal =< 200mA (Io), Any Speed,

Senarai harapan

Toshiba Semiconductor and Storage

1SS424(TPL3,F)

bahagian bahagian: 201

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 20V, Semasa - Rata-rata Disahkan (Io): 200mA, Voltan - Maju (Vf) (Maks) @ Sekiranya: 500mV @ 200mA, Kepantasan: Small Signal =< 200mA (Io), Any Speed,

Senarai harapan

1SS401(TE85L,F)

Toshiba Semiconductor and Storage

1SS401(TE85L,F)

bahagian bahagian: 122602

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 20V, Semasa - Rata-rata Disahkan (Io): 300mA, Voltan - Maju (Vf) (Maks) @ Sekiranya: 450mV @ 300mA, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

Senarai harapan

Toshiba Semiconductor and Storage

1SS193S,LF(D

bahagian bahagian: 2303

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 80V, Semasa - Rata-rata Disahkan (Io): 100mA, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 100mA, Kepantasan: Small Signal =< 200mA (Io), Any Speed, Masa Pemulihan Berbalik (trr): 4ns,

Senarai harapan

Toshiba Semiconductor and Storage

1SS389,H3F

bahagian bahagian: 1533

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 40V, Semasa - Rata-rata Disahkan (Io): 100mA, Voltan - Maju (Vf) (Maks) @ Sekiranya: 600mV @ 50mA, Kepantasan: Small Signal =< 200mA (Io), Any Speed,

Senarai harapan

Toshiba Semiconductor and Storage

1SS394TE85LF

bahagian bahagian: 154898

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 10V, Semasa - Rata-rata Disahkan (Io): 100mA, Voltan - Maju (Vf) (Maks) @ Sekiranya: 500mV @ 100mA, Kepantasan: Small Signal =< 200mA (Io), Any Speed,

Senarai harapan

Toshiba Semiconductor and Storage

1SS397TE85LF

bahagian bahagian: 152629

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 400V, Semasa - Rata-rata Disahkan (Io): 100mA, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.3V @ 100mA, Kepantasan: Small Signal =< 200mA (Io), Any Speed, Masa Pemulihan Berbalik (trr): 500ns,

Senarai harapan

1SS196(TE85L,F)

Toshiba Semiconductor and Storage

1SS196(TE85L,F)

bahagian bahagian: 136052

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 80V, Semasa - Rata-rata Disahkan (Io): 100mA, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 100mA, Kepantasan: Small Signal =< 200mA (Io), Any Speed, Masa Pemulihan Berbalik (trr): 4ns,

Senarai harapan

Toshiba Semiconductor and Storage

1SS403,H3F

bahagian bahagian: 175794

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io): 100mA, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 100mA, Kepantasan: Small Signal =< 200mA (Io), Any Speed, Masa Pemulihan Berbalik (trr): 60ns,

Senarai harapan

Toshiba Semiconductor and Storage

1SS370TE85LF

bahagian bahagian: 1558

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io): 100mA, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 100mA, Kepantasan: Small Signal =< 200mA (Io), Any Speed, Masa Pemulihan Berbalik (trr): 60ns,

Senarai harapan

Toshiba Semiconductor and Storage

1SS307E,L3F

bahagian bahagian: 146552

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 80V, Semasa - Rata-rata Disahkan (Io): 100mA, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.3V @ 100mA, Kepantasan: Small Signal =< 200mA (Io), Any Speed,

Senarai harapan

Toshiba Semiconductor and Storage

1SS413,L3M

bahagian bahagian: 180671

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 20V, Semasa - Rata-rata Disahkan (Io): 50mA, Voltan - Maju (Vf) (Maks) @ Sekiranya: 550mV @ 50mA, Kepantasan: Small Signal =< 200mA (Io), Any Speed,

Senarai harapan

Toshiba Semiconductor and Storage

1SS416,L3M

bahagian bahagian: 113319

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 30V, Semasa - Rata-rata Disahkan (Io): 100mA, Voltan - Maju (Vf) (Maks) @ Sekiranya: 500mV @ 100mA, Kepantasan: Small Signal =< 200mA (Io), Any Speed,

Senarai harapan

Toshiba Semiconductor and Storage

1SS417,L3M

bahagian bahagian: 108515

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 40V, Semasa - Rata-rata Disahkan (Io): 100mA, Voltan - Maju (Vf) (Maks) @ Sekiranya: 620mV @ 50mA, Kepantasan: Small Signal =< 200mA (Io), Any Speed,

Senarai harapan

Toshiba Semiconductor and Storage

1SS417CT,L3F

bahagian bahagian: 21577

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 40V, Semasa - Rata-rata Disahkan (Io): 100mA, Voltan - Maju (Vf) (Maks) @ Sekiranya: 620mV @ 100mA, Kepantasan: Small Signal =< 200mA (Io), Any Speed,

Senarai harapan

Toshiba Semiconductor and Storage

1SS405,H3F

bahagian bahagian: 106441

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 20V, Semasa - Rata-rata Disahkan (Io): 50mA, Voltan - Maju (Vf) (Maks) @ Sekiranya: 550mV @ 50mA, Kepantasan: Small Signal =< 200mA (Io), Any Speed,

Senarai harapan

Toshiba Semiconductor and Storage

1SS389,L3F

bahagian bahagian: 119305

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 10V, Semasa - Rata-rata Disahkan (Io): 100mA, Voltan - Maju (Vf) (Maks) @ Sekiranya: 500mV @ 100mA, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

Senarai harapan

Toshiba Semiconductor and Storage

1SS367,H3F

bahagian bahagian: 129010

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 10V, Semasa - Rata-rata Disahkan (Io): 100mA, Voltan - Maju (Vf) (Maks) @ Sekiranya: 500mV @ 100mA, Kepantasan: Small Signal =< 200mA (Io), Any Speed,

Senarai harapan

Toshiba Semiconductor and Storage

1SS427,L3M

bahagian bahagian: 138564

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 80V, Semasa - Rata-rata Disahkan (Io): 100mA, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 100mA, Kepantasan: Small Signal =< 200mA (Io), Any Speed, Masa Pemulihan Berbalik (trr): 1.6ns,

Senarai harapan

Toshiba Semiconductor and Storage

1SS404,H3F

bahagian bahagian: 174948

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 20V, Semasa - Rata-rata Disahkan (Io): 300mA, Voltan - Maju (Vf) (Maks) @ Sekiranya: 450mV @ 300mA, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

Senarai harapan

Toshiba Semiconductor and Storage

1SS387,L3F

bahagian bahagian: 106991

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 80V, Semasa - Rata-rata Disahkan (Io): 100mA, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 100mA, Kepantasan: Small Signal =< 200mA (Io), Any Speed, Masa Pemulihan Berbalik (trr): 4ns,

Senarai harapan

Toshiba Semiconductor and Storage

1SS352,H3F

bahagian bahagian: 126326

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 80V, Semasa - Rata-rata Disahkan (Io): 100mA, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 100mA, Kepantasan: Small Signal =< 200mA (Io), Any Speed, Masa Pemulihan Berbalik (trr): 4ns,

Senarai harapan

1SS250(TE85L,F)

Toshiba Semiconductor and Storage

1SS250(TE85L,F)

bahagian bahagian: 172900

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io): 100mA, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 100mA, Kepantasan: Small Signal =< 200mA (Io), Any Speed, Masa Pemulihan Berbalik (trr): 60ns,

Senarai harapan

Toshiba Semiconductor and Storage

1SS294,LF

bahagian bahagian: 154455

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 40V, Semasa - Rata-rata Disahkan (Io): 100mA, Voltan - Maju (Vf) (Maks) @ Sekiranya: 600mV @ 100mA, Kepantasan: Small Signal =< 200mA (Io), Any Speed,

Senarai harapan

Toshiba Semiconductor and Storage

BAS516,H3F

bahagian bahagian: 8357

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io): 250mA, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.25V @ 150mA, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 3ns,

Senarai harapan

Toshiba Semiconductor and Storage

BAS316,H3F

bahagian bahagian: 8339

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io): 250mA, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.25V @ 150mA, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 3ns,

Senarai harapan

Toshiba Semiconductor and Storage

BAS516,L3F

bahagian bahagian: 8339

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io): 250mA, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.25V @ 150mA, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 3ns,

Senarai harapan

Toshiba Semiconductor and Storage

TRS10E65C,S1Q

bahagian bahagian: 6216

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 650V, Semasa - Rata-rata Disahkan (Io): 10A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.7V @ 10A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

Senarai harapan

Toshiba Semiconductor and Storage

CBS10S30,L3F

bahagian bahagian: 176414

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 20V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 450mV @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

Senarai harapan

Toshiba Semiconductor and Storage

CBS10S40,L3F

bahagian bahagian: 162705

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 40V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 550mV @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

Senarai harapan

207

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