Diod - Pembetulan - Bujang | Produk Semikonduktor Diskrit | 6

CRG09(TE85L,Q,M)

bahagian bahagian: 193

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 400V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 700mA, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

CUS04(TE85L,Q,M)

bahagian bahagian: 250

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 60V, Semasa - Rata-rata Disahkan (Io): 700mA, Voltan - Maju (Vf) (Maks) @ Sekiranya: 580mV @ 700mA, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

CMH08(TE12L,Q,M)

bahagian bahagian: 223

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 400V, Semasa - Rata-rata Disahkan (Io): 2A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.3V @ 2A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 100ns,

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Toshiba Semiconductor and Storage

CUS10I40A(TE85L,QM

bahagian bahagian: 162

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 40V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 490mV @ 700mA, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

CRG07(TE85L,Q,M)

bahagian bahagian: 183

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 400V, Semasa - Rata-rata Disahkan (Io): 700mA, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 700mA, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

CMH05(TE12L,Q,M)

bahagian bahagian: 178

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 400V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.3V @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 100ns,

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Toshiba Semiconductor and Storage

CRS14(TE85L,Q,M)

bahagian bahagian: 166

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 30V, Semasa - Rata-rata Disahkan (Io): 2A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 490mV @ 2A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

CMS10(TE12L,Q,M)

bahagian bahagian: 130001

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 40V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 550mV @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

CLH02(TE16L,Q)

bahagian bahagian: 2615

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 300V, Semasa - Rata-rata Disahkan (Io): 3A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.3V @ 3A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 35ns,

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Toshiba Semiconductor and Storage

CLS02(TE16L,HIT,Q)

bahagian bahagian: 2547

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 40V, Semasa - Rata-rata Disahkan (Io): 10A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 0.55V @ 10A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

CLS02(T6L,CANO-O,Q

bahagian bahagian: 2587

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 40V, Semasa - Rata-rata Disahkan (Io): 10A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 0.55V @ 10A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

CLS03(TE16R,Q)

bahagian bahagian: 2557

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 60V, Semasa - Rata-rata Disahkan (Io): 10A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 0.58V @ 10A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

CLH02(TE16R,Q)

bahagian bahagian: 2558

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 300V, Semasa - Rata-rata Disahkan (Io): 3A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.3V @ 3A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 35ns,

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Toshiba Semiconductor and Storage

CLH05,LMBJQ(O

bahagian bahagian: 2588

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io): 5A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 0.98V @ 5A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 35ns,

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Toshiba Semiconductor and Storage

CLH07(TE16R,Q)

bahagian bahagian: 2552

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 400V, Semasa - Rata-rata Disahkan (Io): 5A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.8V @ 5A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 35ns,

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Toshiba Semiconductor and Storage

CLS01(TE16R,Q)

bahagian bahagian: 2596

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 30V, Semasa - Rata-rata Disahkan (Io): 10A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 0.47V @ 10A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

CLS03(T6L,SHINA,Q)

bahagian bahagian: 2554

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 60V, Semasa - Rata-rata Disahkan (Io): 10A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 0.58V @ 10A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

CLH01(TE16L,Q)

bahagian bahagian: 2598

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io): 3A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 0.98V @ 3A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 35ns,

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Toshiba Semiconductor and Storage

CLH05(TE16R,Q)

bahagian bahagian: 2581

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io): 5A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 0.98V @ 5A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 35ns,

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Toshiba Semiconductor and Storage

CLS03(TE16L,PCD,Q)

bahagian bahagian: 2562

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 60V, Semasa - Rata-rata Disahkan (Io): 10A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 0.58V @ 10A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

CLS02(TE16R,Q)

bahagian bahagian: 2544

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 40V, Semasa - Rata-rata Disahkan (Io): 10A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 0.55V @ 10A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

CLS02(T6L,CLAR,Q)

bahagian bahagian: 2597

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 40V, Semasa - Rata-rata Disahkan (Io): 10A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 0.55V @ 10A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

CLS02(TE16L,SQC,Q)

bahagian bahagian: 2590

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 40V, Semasa - Rata-rata Disahkan (Io): 10A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 0.55V @ 10A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

CLH06(TE16L,Q)

bahagian bahagian: 2608

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 300V, Semasa - Rata-rata Disahkan (Io): 5A (DC), Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 35ns,

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Toshiba Semiconductor and Storage

CLH01(TE16R,Q)

bahagian bahagian: 2533

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io): 3A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 0.98V @ 3A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 35ns,

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Toshiba Semiconductor and Storage

CLS01,LFJFQ(O

bahagian bahagian: 2549

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 30V, Semasa - Rata-rata Disahkan (Io): 10A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 0.47V @ 10A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

CLS03,LNITTOQ(O

bahagian bahagian: 2564

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 60V, Semasa - Rata-rata Disahkan (Io): 10A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 0.58V @ 10A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

CLS03(T6L,CANO-O,Q

bahagian bahagian: 2613

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 60V, Semasa - Rata-rata Disahkan (Io): 10A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 0.58V @ 10A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

Senarai harapan

Toshiba Semiconductor and Storage

CLH03(TE16L,Q)

bahagian bahagian: 2603

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 400V, Semasa - Rata-rata Disahkan (Io): 3A (DC), Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 35ns,

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Toshiba Semiconductor and Storage

CLS03(TE16L,SQC,Q)

bahagian bahagian: 2602

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 60V, Semasa - Rata-rata Disahkan (Io): 10A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 0.58V @ 10A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

Senarai harapan

Toshiba Semiconductor and Storage

CLS03(TE16L,PSD,Q)

bahagian bahagian: 5263

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 60V, Semasa - Rata-rata Disahkan (Io): 10A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 0.58V @ 10A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

Senarai harapan

Toshiba Semiconductor and Storage

CLH07(TE16L,NMB,Q)

bahagian bahagian: 2547

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 400V, Semasa - Rata-rata Disahkan (Io): 5A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.8V @ 5A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 35ns,

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Toshiba Semiconductor and Storage

CLS03(TE16L,DNSO,Q

bahagian bahagian: 2552

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 60V, Semasa - Rata-rata Disahkan (Io): 10A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 0.58V @ 10A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

Senarai harapan

Toshiba Semiconductor and Storage

CLH06(TE16R,Q)

bahagian bahagian: 5332

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 300V, Semasa - Rata-rata Disahkan (Io): 5A (DC), Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 35ns,

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Toshiba Semiconductor and Storage

CCS15S30,L3IDTF

bahagian bahagian: 2062

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 20V, Semasa - Rata-rata Disahkan (Io): 1.5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 400mV @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

CMH05A(TE12L,Q,M)

bahagian bahagian: 102694

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 400V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.8V @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 35ns,

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