Diod - Pembetulan - Bujang | Produk Semikonduktor Diskrit | 6

CUS05S30,H3F

bahagian bahagian: 141424

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 30V, Semasa - Rata-rata Disahkan (Io): 500mA, Voltan - Maju (Vf) (Maks) @ Sekiranya: 340mV @ 100mA, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

CUS10S30,H3F

bahagian bahagian: 175222

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 30V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 230mV @ 100mA, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

JDH2S02SL,L3F

bahagian bahagian: 21594

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 10V, Semasa - Rata-rata Disahkan (Io): 10mA (DC), Kepantasan: Small Signal =< 200mA (Io), Any Speed,

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Toshiba Semiconductor and Storage

CTS520,L3F

bahagian bahagian: 122854

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 30V, Semasa - Rata-rata Disahkan (Io): 200mA, Voltan - Maju (Vf) (Maks) @ Sekiranya: 600mV @ 200mA, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

CCS15S40,L3F

bahagian bahagian: 159042

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 40V, Semasa - Rata-rata Disahkan (Io): 1.5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 550mV @ 1.5A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

CUS10S40,H3F

bahagian bahagian: 172576

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 40V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 400mV @ 500mA, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

CMF05(TE12L,Q,M)

bahagian bahagian: 158502

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 1000V, Semasa - Rata-rata Disahkan (Io): 500mA, Voltan - Maju (Vf) (Maks) @ Sekiranya: 2.7V @ 500mA, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 100ns,

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Toshiba Semiconductor and Storage

CTS05S30,L3F

bahagian bahagian: 114342

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 30V, Semasa - Rata-rata Disahkan (Io): 500mA, Voltan - Maju (Vf) (Maks) @ Sekiranya: 340mV @ 100mA, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

CES388,L3F

bahagian bahagian: 155708

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 40V, Semasa - Rata-rata Disahkan (Io): 100mA, Voltan - Maju (Vf) (Maks) @ Sekiranya: 600mV @ 100mA, Kepantasan: Small Signal =< 200mA (Io), Any Speed,

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Toshiba Semiconductor and Storage

CMS11(TE12L,Q,M)

bahagian bahagian: 159752

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 40V, Semasa - Rata-rata Disahkan (Io): 2A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 550mV @ 2A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

CUS05S40,H3F

bahagian bahagian: 139868

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 40V, Semasa - Rata-rata Disahkan (Io): 500mA, Voltan - Maju (Vf) (Maks) @ Sekiranya: 350mV @ 100mA, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

TRS6E65C,S1AQ

bahagian bahagian: 11358

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 650V, Semasa - Rata-rata Disahkan (Io): 6A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.7V @ 6A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

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Toshiba Semiconductor and Storage

CMS03(TE12L,Q,M)

bahagian bahagian: 144392

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 30V, Semasa - Rata-rata Disahkan (Io): 3A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 450mV @ 3A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

CMS06(TE12L,Q,M)

bahagian bahagian: 184133

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 30V, Semasa - Rata-rata Disahkan (Io): 2A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 370mV @ 2A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

CRS09(TE85L,Q,M)

bahagian bahagian: 139204

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 30V, Semasa - Rata-rata Disahkan (Io): 1.5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 460mV @ 1.5A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

CRH01(TE85L,Q,M)

bahagian bahagian: 121678

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 980mV @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 35ns,

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Toshiba Semiconductor and Storage

CRS08(TE85L,Q,M)

bahagian bahagian: 183971

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 30V, Semasa - Rata-rata Disahkan (Io): 1.5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 360mV @ 1.5A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

CRS01(TE85L,Q,M)

bahagian bahagian: 104302

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 30V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 360mV @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

CMS04(TE12L,Q,M)

bahagian bahagian: 164330

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 30V, Semasa - Rata-rata Disahkan (Io): 5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 370mV @ 5A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

CMS05(TE12L,Q,M)

bahagian bahagian: 112076

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 30V, Semasa - Rata-rata Disahkan (Io): 5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 450mV @ 5A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

CUS08F30,H3F

bahagian bahagian: 193256

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 30V, Semasa - Rata-rata Disahkan (Io): 800mA, Voltan - Maju (Vf) (Maks) @ Sekiranya: 220mV @ 10mA, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

CBS10F40,L3F

bahagian bahagian: 8420

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 40V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 700mV @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

CUS10F40,H3F

bahagian bahagian: 4875

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 40V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 670mV @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

CUS520,H3F

bahagian bahagian: 181235

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 30V, Semasa - Rata-rata Disahkan (Io): 200mA, Voltan - Maju (Vf) (Maks) @ Sekiranya: 280mV @ 10mA, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

CUS05F40,H3F

bahagian bahagian: 4923

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 40V, Semasa - Rata-rata Disahkan (Io): 500mA, Voltan - Maju (Vf) (Maks) @ Sekiranya: 810mV @ 500mA, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

CUS05F30,H3F

bahagian bahagian: 151245

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 30V, Semasa - Rata-rata Disahkan (Io): 500mA, Voltan - Maju (Vf) (Maks) @ Sekiranya: 450mV @ 500mA, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

CTS05F40,L3F

bahagian bahagian: 8357

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 40V, Semasa - Rata-rata Disahkan (Io): 500mA, Voltan - Maju (Vf) (Maks) @ Sekiranya: 810mV @ 500mA, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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