Diod - Pembetulan - Bujang | Produk Semikonduktor Diskrit | 6

CBS05F30(TPL3)

bahagian bahagian: 1645

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 30V, Semasa - Rata-rata Disahkan (Io): 500mA, Voltan - Maju (Vf) (Maks) @ Sekiranya: 450mV @ 500mA, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

DSR01S30SC(TPL3)

bahagian bahagian: 131336

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 30V, Semasa - Rata-rata Disahkan (Io): 100mA, Voltan - Maju (Vf) (Maks) @ Sekiranya: 620mV @ 100mA, Kepantasan: Small Signal =< 200mA (Io), Any Speed,

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Toshiba Semiconductor and Storage

CLS01(TE16L,PAS,Q)

bahagian bahagian: 1424

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 30V, Semasa - Rata-rata Disahkan (Io): 10A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 0.47V @ 10A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

DSF01S30SC(TPL3)

bahagian bahagian: 1267

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 30V, Semasa - Rata-rata Disahkan (Io): 100mA, Voltan - Maju (Vf) (Maks) @ Sekiranya: 500mV @ 100mA, Kepantasan: Small Signal =< 200mA (Io), Any Speed,

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Toshiba Semiconductor and Storage

CLS01(T6LSONY,Q)

bahagian bahagian: 1440

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 30V, Semasa - Rata-rata Disahkan (Io): 10A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 0.47V @ 10A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

CLH05(T6L,NKOD,Q)

bahagian bahagian: 1359

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io): 5A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 0.98V @ 5A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 35ns,

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Toshiba Semiconductor and Storage

CLH03(TE16R,Q)

bahagian bahagian: 1368

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 400V, Semasa - Rata-rata Disahkan (Io): 3A (DC), Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 35ns,

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Toshiba Semiconductor and Storage

CMS03(TE12L)

bahagian bahagian: 1091

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 30V, Semasa - Rata-rata Disahkan (Io): 3A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 450mV @ 3A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

DSF07S30U(TPH3,F)

bahagian bahagian: 1170

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 30V, Semasa - Rata-rata Disahkan (Io): 700mA, Voltan - Maju (Vf) (Maks) @ Sekiranya: 450mV @ 700mA, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

DSF05S30U(TPH3,F)

bahagian bahagian: 1121

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 30V, Semasa - Rata-rata Disahkan (Io): 500mA, Voltan - Maju (Vf) (Maks) @ Sekiranya: 450mV @ 500mA, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

U1GWJ49(TE12L,F)

bahagian bahagian: 852

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 40V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 550mV @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

CRS04(TE85L,Q,M)

bahagian bahagian: 101221

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 40V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 510mV @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

CUS02(TE85L,Q,M)

bahagian bahagian: 779

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 30V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 470mV @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

CRS06(TE85L,Q,M)

bahagian bahagian: 186793

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 20V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 360mV @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

CUHS10F60,H3F

bahagian bahagian: 9971

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 60V, Semasa - Rata-rata Disahkan (Io): 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

CUS15S40,H3F

bahagian bahagian: 186045

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 40V, Semasa - Rata-rata Disahkan (Io): 1.5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 450mV @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

CRS11(TE85L,Q,M)

bahagian bahagian: 161979

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 30V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 360mV @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

TBAS16,LM

bahagian bahagian: 122216

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 80V, Semasa - Rata-rata Disahkan (Io): 215mA, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

CUS551V30,H3F

bahagian bahagian: 168808

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 30V, Semasa - Rata-rata Disahkan (Io): 500mA, Voltan - Maju (Vf) (Maks) @ Sekiranya: 470mV @ 500mA, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

CUS01(TE85L,Q,M)

bahagian bahagian: 784

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 30V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 390mV @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

CUS15S30,H3F

bahagian bahagian: 171031

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 30V, Semasa - Rata-rata Disahkan (Io): 1.5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 400mV @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

TBAT54,LM

bahagian bahagian: 142010

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 30V, Semasa - Rata-rata Disahkan (Io): 140mA, Voltan - Maju (Vf) (Maks) @ Sekiranya: 580mV @ 100mA, Kepantasan: Small Signal =< 200mA (Io), Any Speed, Masa Pemulihan Berbalik (trr): 1.5ns,

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Toshiba Semiconductor and Storage

CMS09(TE12L)

bahagian bahagian: 262

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 30V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 450mV @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

CRS04(TE85L)

bahagian bahagian: 173

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 40V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 510mV @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

CMS02(TE12L)

bahagian bahagian: 183

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 30V, Semasa - Rata-rata Disahkan (Io): 3A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 400mV @ 3A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

CMS04(TE12L)

bahagian bahagian: 211

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 30V, Semasa - Rata-rata Disahkan (Io): 5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 370mV @ 5A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

CMS11(TE12L)

bahagian bahagian: 213

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 40V, Semasa - Rata-rata Disahkan (Io): 2A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 550mV @ 2A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

CRS09(TE85L)

bahagian bahagian: 196

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 30V, Semasa - Rata-rata Disahkan (Io): 1.5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 460mV @ 1.5A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

CRS08(TE85L)

bahagian bahagian: 264

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 30V, Semasa - Rata-rata Disahkan (Io): 1.5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 360mV @ 1.5A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

CRH01(TE85L)

bahagian bahagian: 5028

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 980mV @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 35ns,

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Toshiba Semiconductor and Storage

CRS01(TE85L)

bahagian bahagian: 200

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 30V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 360mV @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

CRS11(TE85L)

bahagian bahagian: 264

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 30V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 360mV @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

CMS01(TE12L)

bahagian bahagian: 178

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 30V, Semasa - Rata-rata Disahkan (Io): 3A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 370mV @ 3A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

CMS01(TE12L,Q,M)

bahagian bahagian: 129014

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 30V, Semasa - Rata-rata Disahkan (Io): 3A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 370mV @ 3A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

CCS15S30,L3QUF

bahagian bahagian: 124325

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 20V, Semasa - Rata-rata Disahkan (Io): 1.5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 400mV @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

CUS10F30,H3F

bahagian bahagian: 143420

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 30V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 500mV @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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