Ingatan

MT53B1G32D4NQ-062 WT:D

bahagian bahagian: 1458

MT41K1G8RKB-107:N

bahagian bahagian: 88

Jenis Ingatan: Volatile, Format Memori: DRAM, Teknologi: SDRAM - DDR3L, Saiz Ingatan: 8Gb (1G x 8), Kekerapan Jam: 933MHz,

MT41J128M16JT-093 J:K

bahagian bahagian: 4558

Jenis Ingatan: Volatile, Format Memori: DRAM, Teknologi: SDRAM - DDR3, Saiz Ingatan: 2Gb (128M x 16), Kekerapan Jam: 1066MHz,

MT29F128G08AEEBBH6-12:B TR

bahagian bahagian: 922

Jenis Ingatan: Non-Volatile, Format Memori: FLASH, Teknologi: FLASH - NAND, Saiz Ingatan: 128Gb (16G x 8), Kekerapan Jam: 83MHz,

MT53D6DABE-DC

bahagian bahagian: 6785

MTFC256GAOAMAM-WT ES

bahagian bahagian: 7553

Jenis Ingatan: Non-Volatile, Format Memori: FLASH, Teknologi: FLASH - NAND, Saiz Ingatan: 2Tb (256G x 8),

MT53D512M32D2NP-046 AUT ES:D

bahagian bahagian: 2262

Jenis Ingatan: Volatile, Format Memori: DRAM, Teknologi: SDRAM - Mobile LPDDR4, Saiz Ingatan: 16Gb (512M x 32), Kekerapan Jam: 2133MHz,

MT49H16M18SJ-25:B TR

bahagian bahagian: 3231

Jenis Ingatan: Volatile, Format Memori: DRAM, Teknologi: DRAM, Saiz Ingatan: 288Mb (16M x 18), Kekerapan Jam: 400MHz,

MT53B4DBDT-DC

bahagian bahagian: 3605

Jenis Ingatan: Volatile, Format Memori: DRAM, Teknologi: SDRAM - Mobile LPDDR4,

MT29F256G08EBHAFB16A3WC1

bahagian bahagian: 7977

MT53D512M64D8TZ-053 WT ES:B TR

bahagian bahagian: 3384

Jenis Ingatan: Volatile, Format Memori: DRAM, Teknologi: SDRAM - Mobile LPDDR4, Saiz Ingatan: 32Gb (512M x 64), Kekerapan Jam: 1866MHz,

MT53D4DANW-DC

bahagian bahagian: 6394

MT52L256M32D1PU-107 WT ES:B

bahagian bahagian: 3616

Jenis Ingatan: Volatile, Format Memori: DRAM, Teknologi: SDRAM - Mobile LPDDR3, Saiz Ingatan: 8Gb (256M x 32), Kekerapan Jam: 933MHz,

MT47H64M16U88BWC1

bahagian bahagian: 8159

MT25QL02GCBB8E12-0SIT

bahagian bahagian: 58

Jenis Ingatan: Non-Volatile, Format Memori: FLASH, Teknologi: FLASH - NOR, Saiz Ingatan: 2Gb (256M x 8), Kekerapan Jam: 133MHz, Tulis Masa Kitaran - Perkataan, Halaman: 8ms, 2.8ms,

MT29TZZZ5D7DKFRL-107 W.9A7 TR

bahagian bahagian: 3886

MT29GZ5A5BPGGA-53ITES.87J TR

bahagian bahagian: 3089

Jenis Ingatan: Non-Volatile, Format Memori: FLASH, RAM, Teknologi: FLASH - NAND, DRAM - LPDDR4, Saiz Ingatan: 4Gb (512M x 8)(NAND), 4G (128M x 32)(LPDDR4), Kekerapan Jam: 1866MHz,

MT29C4G48MAAGBBAKS-48 IT

bahagian bahagian: 1159

MTFC32GAPALBH-AIT ES

bahagian bahagian: 7570

Jenis Ingatan: Non-Volatile, Format Memori: FLASH, Teknologi: FLASH - NAND, Saiz Ingatan: 256Gb (32G x 8),

MT29F8G08ADAFAWP-AITES:F

bahagian bahagian: 5460

MT29TZZZAD8DKKBT-107 W ES.9F8

bahagian bahagian: 5534

MT53D512M32D2NP-053 WT ES:D TR

bahagian bahagian: 3388

Jenis Ingatan: Volatile, Format Memori: DRAM, Teknologi: SDRAM - Mobile LPDDR4, Saiz Ingatan: 16Gb (512M x 32), Kekerapan Jam: 1866MHz,

MT53D1G32D4BD-053 WT ES:D

bahagian bahagian: 1991

MT29VZZZ7D7HQKWL-062 W ES.G7A TR

bahagian bahagian: 2677

MTFC16GAPALNA-AAT TR

bahagian bahagian: 196

MT35XL256ABA1G12-0AAT TR

bahagian bahagian: 3348

Jenis Ingatan: Non-Volatile, Format Memori: FLASH, Teknologi: FLASH - NOR, Saiz Ingatan: 256Mb (32M x 8), Kekerapan Jam: 133MHz,

MT53D1G64D8NW-053 WT ES:E TR

bahagian bahagian: 9115

MT53D8DBNZ-DC

bahagian bahagian: 3720

MT53D4DANW-DC TR

bahagian bahagian: 9265

MT29F256G08EBHAFB16A3WSA

bahagian bahagian: 8012

MT53D2048M32D8QD-062 WT ES:D TR

bahagian bahagian: 3261

Jenis Ingatan: Volatile, Format Memori: DRAM, Teknologi: SDRAM - Mobile LPDDR4, Saiz Ingatan: 64Gb (2G x 32), Kekerapan Jam: 1600MHz,

MT53D4D1ARQ-DC TR

bahagian bahagian: 9292

MT53B384M32D2NK-062 WT ES:B

bahagian bahagian: 1576

Jenis Ingatan: Volatile, Format Memori: DRAM, Teknologi: SDRAM - Mobile LPDDR4, Saiz Ingatan: 12Gb (384M x 32), Kekerapan Jam: 1600MHz,

MT53E1G64D8NW-053 WT:E TR

bahagian bahagian: 9928

MT29F32G08ABCABH1-10Z:A TR

bahagian bahagian: 2748

Jenis Ingatan: Non-Volatile, Format Memori: FLASH, Teknologi: FLASH - NAND, Saiz Ingatan: 32Gb (4G x 8), Kekerapan Jam: 100MHz,

MT53B2DANW-DC

bahagian bahagian: 1580

Jenis Ingatan: Volatile, Format Memori: DRAM, Teknologi: SDRAM - Mobile LPDDR4,