Transistor - FET, MOSFET - Bujang | Produk Semikonduktor Diskrit | 21

SSM3K303T(TE85L,F)

bahagian bahagian: 872

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.9A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4V, 10V, Rds On (Maks) @ Id, Vgs: 83 mOhm @ 1.5A, 10V,

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Toshiba Semiconductor and Storage

SSM3K316T(TE85L,F)

bahagian bahagian: 922

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.8V, 10V, Rds On (Maks) @ Id, Vgs: 53 mOhm @ 3A, 10V,

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Toshiba Semiconductor and Storage

SSM5G10TU(TE85L,F)

bahagian bahagian: 1003

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.5A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.8V, 4V, Rds On (Maks) @ Id, Vgs: 213 mOhm @ 1A, 4V,

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Toshiba Semiconductor and Storage

TPCC8002-H(TE12LQM

bahagian bahagian: 6112

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 22A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 8.3 mOhm @ 11A, 10V,

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Toshiba Semiconductor and Storage

SSM4K27CTTPL3

bahagian bahagian: 933

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 500mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.8V, 4V, Rds On (Maks) @ Id, Vgs: 205 mOhm @ 250mA, 4V,

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Toshiba Semiconductor and Storage

SSM5H12TU(TE85L,F)

bahagian bahagian: 854

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.9A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.8V, 4V, Rds On (Maks) @ Id, Vgs: 133 mOhm @ 1A, 4V,

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Toshiba Semiconductor and Storage

SSM6J53FE(TE85L,F)

bahagian bahagian: 921

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.8A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.5V, 2.5V, Rds On (Maks) @ Id, Vgs: 136 mOhm @ 1A, 2.5V,

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Toshiba Semiconductor and Storage

TK65E10N1,S1X

bahagian bahagian: 25010

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 148A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 4.8 mOhm @ 32.5A, 10V,

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Toshiba Semiconductor and Storage

TPCP8004(TE85L,F)

bahagian bahagian: 6099

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8.3A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 8.5 mOhm @ 4.2A, 10V,

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Toshiba Semiconductor and Storage

TPCA8052-H(TE12LQM

bahagian bahagian: 42372

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 20A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 11.3 mOhm @ 10A, 10V,

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Toshiba Semiconductor and Storage

SSM3J114TU(T5L,T)

bahagian bahagian: 1005

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.8A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.5V, 4V, Rds On (Maks) @ Id, Vgs: 149 mOhm @ 600mA, 4V,

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Toshiba Semiconductor and Storage

TPCC8003-H(TE12LQM

bahagian bahagian: 6113

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 13A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 16.9 mOhm @ 6.5A, 10V,

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Toshiba Semiconductor and Storage

SSM3K315T(TE85L,F)

bahagian bahagian: 878

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 27.6 mOhm @ 4A, 10V,

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Toshiba Semiconductor and Storage

SSM6J51TUTE85LF

bahagian bahagian: 910

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 12V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.5V, 2.5V, Rds On (Maks) @ Id, Vgs: 54 mOhm @ 2A, 2.5V,

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Toshiba Semiconductor and Storage

SSM3K35MFV(TPL3)

bahagian bahagian: 157724

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 180mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.2V, 4V, Rds On (Maks) @ Id, Vgs: 3 Ohm @ 50mA, 4V,

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Toshiba Semiconductor and Storage

SSM6J409TU(TE85L,F

bahagian bahagian: 864

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 9.5A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.5V, 4.5V, Rds On (Maks) @ Id, Vgs: 22.1 mOhm @ 3A, 4.5V,

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Toshiba Semiconductor and Storage

SSM3K106TU(TE85L)

bahagian bahagian: 899

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.2A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4V, 10V, Rds On (Maks) @ Id, Vgs: 310 mOhm @ 600mA, 10V,

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Toshiba Semiconductor and Storage

TK4A60D(STA4,Q,M)

bahagian bahagian: 890

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 1.7 Ohm @ 2A, 10V,

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Toshiba Semiconductor and Storage

TK40P04M1(T6RSS-Q)

bahagian bahagian: 935

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 40A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 11 mOhm @ 20A, 10V,

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Toshiba Semiconductor and Storage

SSM3J321T(TE85L,F)

bahagian bahagian: 912

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.2A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.5V, 4.5V, Rds On (Maks) @ Id, Vgs: 46 mOhm @ 3A, 4.5V,

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Toshiba Semiconductor and Storage

TPCP8103-H(TE85LFM

bahagian bahagian: 895

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.8A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 40 mOhm @ 2.4A, 10V,

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Toshiba Semiconductor and Storage

SSM3K15FS,LF

bahagian bahagian: 931

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 100mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 2.5V, 4V, Rds On (Maks) @ Id, Vgs: 4 Ohm @ 10mA, 4V,

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Toshiba Semiconductor and Storage

TK40P03M1(T6RSS-Q)

bahagian bahagian: 864

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 40A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 10.8 mOhm @ 20A, 10V,

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Toshiba Semiconductor and Storage

TK13A65U(STA4,Q,M)

bahagian bahagian: 20263

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 650V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 13A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 380 mOhm @ 6.5A, 10V,

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Toshiba Semiconductor and Storage

TK4A60DA(STA4,Q,M)

bahagian bahagian: 932

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.5A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 2.2 Ohm @ 1.8A, 10V,

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Toshiba Semiconductor and Storage

TPCC8006-H(TE12LQM

bahagian bahagian: 889

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 22A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 8 mOhm @ 11A, 10V,

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Toshiba Semiconductor and Storage

TPCC8001-H(TE12LQM

bahagian bahagian: 918

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 22A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 8.3 mOhm @ 11A, 10V,

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Toshiba Semiconductor and Storage

SSM3J307T(TE85L,F)

bahagian bahagian: 885

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.5V, 4.5V, Rds On (Maks) @ Id, Vgs: 31 mOhm @ 4A, 4.5V,

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Toshiba Semiconductor and Storage

TPCC8A01-H(TE12LQM

bahagian bahagian: 889

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 21A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 9.9 mOhm @ 10.5A, 10V,

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Toshiba Semiconductor and Storage

SSM3J15CT(TPL3)

bahagian bahagian: 984

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 100mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 2.5V, 4V, Rds On (Maks) @ Id, Vgs: 12 Ohm @ 10mA, 4V,

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Toshiba Semiconductor and Storage

TPCA8048-H(TE12L,Q

bahagian bahagian: 776

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 35A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 6.6 mOhm @ 18A, 10V,

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Toshiba Semiconductor and Storage

SSM6J214FE(TE85L,F

bahagian bahagian: 13222

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.6A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.8V, 10V, Rds On (Maks) @ Id, Vgs: 50 mOhm @ 3A, 10V,

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Toshiba Semiconductor and Storage

TPC8111(TE12L,Q,M)

bahagian bahagian: 632

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 11A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4V, 10V, Rds On (Maks) @ Id, Vgs: 12 mOhm @ 5.5A, 10V,

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Toshiba Semiconductor and Storage

TPCA8102(TE12L,Q,M

bahagian bahagian: 661

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 40A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4V, 10V, Rds On (Maks) @ Id, Vgs: 6 mOhm @ 20A, 10V,

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Toshiba Semiconductor and Storage

TPCA8018-H(TE12LQM

bahagian bahagian: 618

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 30A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 6.2 mOhm @ 15A, 10V,

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Toshiba Semiconductor and Storage

TPC6104(TE85L,F,M)

bahagian bahagian: 607

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.5A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.8V, 4.5V, Rds On (Maks) @ Id, Vgs: 40 mOhm @ 2.8A, 4.5V,

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