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Transistor - FET, MOSFET - Bujang

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  • Transistor - FET, MOSFET - Bujang
TPCA8010-H(TE12L,Q
Toshiba Semiconductor and Storage

TPCA8010-H(TE12L,Q

bahagian bahagian: 6033

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 200V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.5A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 450 mOhm @ 2.7A, 10V,

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TPCA8009-H(TE12L,Q
Toshiba Semiconductor and Storage

TPCA8009-H(TE12L,Q

bahagian bahagian: 9563

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 150V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 7A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 350 mOhm @ 3.5A, 10V,

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TPCA8016-H(TE12LQM
Toshiba Semiconductor and Storage

TPCA8016-H(TE12LQM

bahagian bahagian: 9528

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 25A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 21 mOhm @ 13A, 10V,

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SSM3J355R,LF
Toshiba Semiconductor and Storage

SSM3J355R,LF

bahagian bahagian: 128788

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.8V, 4.5V, Rds On (Maks) @ Id, Vgs: 30.1 mOhm @ 4A, 4.5V,

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TPCA8007-H(TE12L,Q
Toshiba Semiconductor and Storage

TPCA8007-H(TE12L,Q

bahagian bahagian: 9600

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 20A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 47 mOhm @ 10A, 10V,

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SSM6J512NU,LF
Toshiba Semiconductor and Storage

SSM6J512NU,LF

bahagian bahagian: 193227

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 12V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 10A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.8V, 8V, Rds On (Maks) @ Id, Vgs: 16.2 mOhm @ 4A, 8V,

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SSM3K09FU,LF
Toshiba Semiconductor and Storage

SSM3K09FU,LF

bahagian bahagian: 126797

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 400mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 3.3V, 10V, Rds On (Maks) @ Id, Vgs: 700 mOhm @ 200MA, 10V,

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SSM3J134TU,LF
Toshiba Semiconductor and Storage

SSM3J134TU,LF

bahagian bahagian: 16272

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.2A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.5V, 4.5V, Rds On (Maks) @ Id, Vgs: 93 mOhm @ 1.5A, 4.5V,

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TPN3300ANH,LQ
Toshiba Semiconductor and Storage

TPN3300ANH,LQ

bahagian bahagian: 195443

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 9.4A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 33 mOhm @ 4.7A, 10V,

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TPCF8107,LF
Toshiba Semiconductor and Storage

TPCF8107,LF

bahagian bahagian: 69123

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 28 mOhm @ 3A, 10V,

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SSM6J501NU,LF
Toshiba Semiconductor and Storage

SSM6J501NU,LF

bahagian bahagian: 176891

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 10A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.5V, 4.5V, Rds On (Maks) @ Id, Vgs: 15.3 mOhm @ 4A, 4.5V,

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SSM3H137TU,LF
Toshiba Semiconductor and Storage

SSM3H137TU,LF

bahagian bahagian: 16238

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 34V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4V, 10V, Rds On (Maks) @ Id, Vgs: 240 mOhm @ 1A, 10V,

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TPCA8008-H(TE12L,Q
Toshiba Semiconductor and Storage

TPCA8008-H(TE12L,Q

bahagian bahagian: 9581

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 250V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 580 mOhm @ 2A, 10V,

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SSM3K72CFS,LF
Toshiba Semiconductor and Storage

SSM3K72CFS,LF

bahagian bahagian: 138628

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 170mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 3.9 Ohm @ 100mA, 10V,

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SSM3J129TU(TE85L)
Toshiba Semiconductor and Storage

SSM3J129TU(TE85L)

bahagian bahagian: 6003

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.6A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.5V, 4.5V, Rds On (Maks) @ Id, Vgs: 46 mOhm @ 3A, 4.5V,

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TPCC8005-H(TE12LQM
Toshiba Semiconductor and Storage

TPCC8005-H(TE12LQM

bahagian bahagian: 9435

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 26A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 6.4 mOhm @ 13A, 10V,

Senarai harapan
SSM3K17SU,LF
Toshiba Semiconductor and Storage

SSM3K17SU,LF

bahagian bahagian: 5947

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 50V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 100mA (Ta), Rds On (Maks) @ Id, Vgs: 20 Ohm @ 10mA, 4V,

Senarai harapan
TPCA8025(TE12L,Q,M
Toshiba Semiconductor and Storage

TPCA8025(TE12L,Q,M

bahagian bahagian: 9392

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 40A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 3.5 mOhm @ 20A, 10V,

Senarai harapan
TPCA8021-H(TE12LQM
Toshiba Semiconductor and Storage

TPCA8021-H(TE12LQM

bahagian bahagian: 9362

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 27A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 9 mOhm @ 14A, 10V,

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TPC8109(TE12L)
Toshiba Semiconductor and Storage

TPC8109(TE12L)

bahagian bahagian: 9242

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 10A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4V, 10V, Rds On (Maks) @ Id, Vgs: 20 mOhm @ 5A, 10V,

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SSM3J108TU(TE85L)
Toshiba Semiconductor and Storage

SSM3J108TU(TE85L)

bahagian bahagian: 9444

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.8A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.8V, 4V, Rds On (Maks) @ Id, Vgs: 158 mOhm @ 800mA, 4V,

Senarai harapan
TPCC8002-H(TE12L,Q
Toshiba Semiconductor and Storage

TPCC8002-H(TE12L,Q

bahagian bahagian: 8783

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 22A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 8.3 mOhm @ 11A, 10V,

Senarai harapan
TPN2R304PL,L1Q
Toshiba Semiconductor and Storage

TPN2R304PL,L1Q

bahagian bahagian: 119339

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 80A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 2.3 mOhm @ 40A, 10V,

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SSM3K56FS,LF
Toshiba Semiconductor and Storage

SSM3K56FS,LF

bahagian bahagian: 100620

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 800mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.5V, 4.5V, Rds On (Maks) @ Id, Vgs: 235 mOhm @ 800mA, 4.5V,

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TK31A60W,S4VX
Toshiba Semiconductor and Storage

TK31A60W,S4VX

bahagian bahagian: 10937

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 30.8A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 88 mOhm @ 15.4A, 10V,

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TPN4R303NL,L1Q
Toshiba Semiconductor and Storage

TPN4R303NL,L1Q

bahagian bahagian: 185384

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 40A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 4.3 mOhm @ 20A, 10V,

Senarai harapan
TPHR9003NL,L1Q
Toshiba Semiconductor and Storage

TPHR9003NL,L1Q

bahagian bahagian: 60875

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 60A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 0.9 mOhm @ 30A, 10V,

Senarai harapan
SSM3K15F,LF
Toshiba Semiconductor and Storage

SSM3K15F,LF

bahagian bahagian: 25861

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 100mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 2.5V, 4V, Rds On (Maks) @ Id, Vgs: 4 Ohm @ 10mA, 4V,

Senarai harapan
SSM3K44FS,LF
Toshiba Semiconductor and Storage

SSM3K44FS,LF

bahagian bahagian: 25853

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 100mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 2.5V, 4V, Rds On (Maks) @ Id, Vgs: 4 Ohm @ 10mA, 4V,

Senarai harapan
TK31J60W5,S1VQ
Toshiba Semiconductor and Storage

TK31J60W5,S1VQ

bahagian bahagian: 9256

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 30.8A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 88 mOhm @ 15.4A, 10V,

Senarai harapan
TPH6400ENH,L1Q
Toshiba Semiconductor and Storage

TPH6400ENH,L1Q

bahagian bahagian: 101081

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 200V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 13A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 64 mOhm @ 6.5A, 10V,

Senarai harapan
TPH8R80ANH,L1Q
Toshiba Semiconductor and Storage

TPH8R80ANH,L1Q

bahagian bahagian: 98527

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 32A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 8.8 mOhm @ 16A, 10V,

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SSM3K59CTB,L3F
Toshiba Semiconductor and Storage

SSM3K59CTB,L3F

bahagian bahagian: 173472

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.8V, 8V, Rds On (Maks) @ Id, Vgs: 215 mOhm @ 1A, 8V,

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SSM3J46CTB(TPL3)
Toshiba Semiconductor and Storage

SSM3J46CTB(TPL3)

bahagian bahagian: 115248

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.5V, 4.5V, Rds On (Maks) @ Id, Vgs: 103 mOhm @ 1.5A, 4.5V,

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SSM3K16CTC,L3F
Toshiba Semiconductor and Storage

SSM3K16CTC,L3F

bahagian bahagian: 21536

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 200mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.5V, 4.5V, Rds On (Maks) @ Id, Vgs: 2.2 Ohm @ 100mA, 4.5V,

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TK20N60W,S1VF
Toshiba Semiconductor and Storage

TK20N60W,S1VF

bahagian bahagian: 14097

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 20A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 155 mOhm @ 10A, 10V,

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