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Transistor - FET, MOSFET - Bujang

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  • Transistor - FET, MOSFET - Bujang
TK31V60W,LVQ
Toshiba Semiconductor and Storage

TK31V60W,LVQ

bahagian bahagian: 15568

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 30.8A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 98 mOhm @ 15.4A, 10V,

Senarai harapan
TPW4R50ANH,L1Q
Toshiba Semiconductor and Storage

TPW4R50ANH,L1Q

bahagian bahagian: 93811

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 92A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 4.5 mOhm @ 46A, 10V,

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SSM6J215FE(TE85L,F
Toshiba Semiconductor and Storage

SSM6J215FE(TE85L,F

bahagian bahagian: 179583

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.4A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.5V, 4.5V, Rds On (Maks) @ Id, Vgs: 59 mOhm @ 3A, 4.5V,

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SSM3K123TU,LF
Toshiba Semiconductor and Storage

SSM3K123TU,LF

bahagian bahagian: 154973

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.2A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.5V, 4V, Rds On (Maks) @ Id, Vgs: 28 mOhm @ 3A, 4V,

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TK35N65W5,S1F
Toshiba Semiconductor and Storage

TK35N65W5,S1F

bahagian bahagian: 8137

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 650V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 35A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 95 mOhm @ 17.5A, 10V,

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TK31N60W5,S1VF
Toshiba Semiconductor and Storage

TK31N60W5,S1VF

bahagian bahagian: 10406

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 30.8A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 99 mOhm @ 15.4A, 10V,

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TK35A65W,S5X
Toshiba Semiconductor and Storage

TK35A65W,S5X

bahagian bahagian: 10249

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 650V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 35A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 80 mOhm @ 17.5A, 10V,

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SSM3K72CTC,L3F
Toshiba Semiconductor and Storage

SSM3K72CTC,L3F

bahagian bahagian: 165309

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 150mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 3.9 Ohm @ 100mA, 10V,

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TK31E60X,S1X
Toshiba Semiconductor and Storage

TK31E60X,S1X

bahagian bahagian: 12874

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 30.8A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 88 mOhm @ 9.4A, 10V,

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TPW1R306PL,L1Q
Toshiba Semiconductor and Storage

TPW1R306PL,L1Q

bahagian bahagian: 52018

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 260A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 1.29 mOhm @ 50A, 10V,

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SSM3J120TU,LF
Toshiba Semiconductor and Storage

SSM3J120TU,LF

bahagian bahagian: 181550

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.5V, 4V, Rds On (Maks) @ Id, Vgs: 38 mOhm @ 3A, 4V,

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TK31E60W,S1VX
Toshiba Semiconductor and Storage

TK31E60W,S1VX

bahagian bahagian: 10871

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 30.8A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 88 mOhm @ 15.4A, 10V,

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SSM3J351R,LF
Toshiba Semiconductor and Storage

SSM3J351R,LF

bahagian bahagian: 125673

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.5A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4V, 10V, Rds On (Maks) @ Id, Vgs: 134 mOhm @ 1A, 10V,

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TPCA8026(TE12L,Q,M
Toshiba Semiconductor and Storage

TPCA8026(TE12L,Q,M

bahagian bahagian: 77538

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 45A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 2.2 mOhm @ 23A, 10V,

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SSM3K7002CFU,LF
Toshiba Semiconductor and Storage

SSM3K7002CFU,LF

bahagian bahagian: 113529

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 170mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 3.9 Ohm @ 100mA, 10V,

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TPH5900CNH,L1Q
Toshiba Semiconductor and Storage

TPH5900CNH,L1Q

bahagian bahagian: 139118

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 150V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 9A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 59 mOhm @ 4.5A, 10V,

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TK39N60W5,S1VF
Toshiba Semiconductor and Storage

TK39N60W5,S1VF

bahagian bahagian: 10492

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 38.8A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 74 mOhm @ 19.4A, 10V,

Senarai harapan
SSM3J334R,LF
Toshiba Semiconductor and Storage

SSM3J334R,LF

bahagian bahagian: 114000

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4V, 10V, Rds On (Maks) @ Id, Vgs: 71 mOhm @ 3A, 10V,

Senarai harapan
SSM3K333R,LF
Toshiba Semiconductor and Storage

SSM3K333R,LF

bahagian bahagian: 181888

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 28 mOhm @ 5A, 10V,

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SSM3K37FS,LF
Toshiba Semiconductor and Storage

SSM3K37FS,LF

bahagian bahagian: 164622

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 200mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.5V, 4.5V, Rds On (Maks) @ Id, Vgs: 2.2 Ohm @ 100mA, 4.5V,

Senarai harapan
SSM6K781G,LF
Toshiba Semiconductor and Storage

SSM6K781G,LF

bahagian bahagian: 168957

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 12V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 7A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.5V, 4.5V, Rds On (Maks) @ Id, Vgs: 18 mOhm @ 1.5A, 4.5V,

Senarai harapan
SSM3K72KCT,L3F
Toshiba Semiconductor and Storage

SSM3K72KCT,L3F

bahagian bahagian: 168170

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 400mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 1.5 Ohm @ 100mA, 10V,

Senarai harapan
SSM3J130TU,LF
Toshiba Semiconductor and Storage

SSM3J130TU,LF

bahagian bahagian: 194401

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.4A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.5V, 4.5V, Rds On (Maks) @ Id, Vgs: 25.8 mOhm @ 4A, 4.5V,

Senarai harapan
SSM3K16CT,L3F
Toshiba Semiconductor and Storage

SSM3K16CT,L3F

bahagian bahagian: 21564

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 100mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.5V, 4V, Rds On (Maks) @ Id, Vgs: 3 Ohm @ 10mA, 4V,

Senarai harapan
TK16A60W,S4X
Toshiba Semiconductor and Storage

TK16A60W,S4X

bahagian bahagian: 29509

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 15.8A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 190 mOhm @ 7.9A, 10V,

Senarai harapan
TK9J90E,S1E
Toshiba Semiconductor and Storage

TK9J90E,S1E

bahagian bahagian: 20952

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 900V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 9A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 1.3 Ohm @ 4.5A, 10V,

Senarai harapan
TK14C65W5,S1Q
Toshiba Semiconductor and Storage

TK14C65W5,S1Q

bahagian bahagian: 26069

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 650V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 13.7A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 300 mOhm @ 6.9A, 10V,

Senarai harapan
TK13A50DA(STA4,Q,M
Toshiba Semiconductor and Storage

TK13A50DA(STA4,Q,M

bahagian bahagian: 30522

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 500V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 12.5A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 470 mOhm @ 6.3A, 10V,

Senarai harapan
SSM3J132TU,LF
Toshiba Semiconductor and Storage

SSM3J132TU,LF

bahagian bahagian: 103604

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 12V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.4A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.2V, 4.5V, Rds On (Maks) @ Id, Vgs: 17 mOhm @ 5A, 4.5V,

Senarai harapan
TK12A60W,S4VX
Toshiba Semiconductor and Storage

TK12A60W,S4VX

bahagian bahagian: 20769

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 11.5A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 300 mOhm @ 5.8A, 10V,

Senarai harapan
TK15A60D(STA4,Q,M)
Toshiba Semiconductor and Storage

TK15A60D(STA4,Q,M)

bahagian bahagian: 24154

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 15A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 370 mOhm @ 7.5A, 10V,

Senarai harapan
TK9A65W,S5X
Toshiba Semiconductor and Storage

TK9A65W,S5X

bahagian bahagian: 30056

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 650V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 9.3A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 500 mOhm @ 4.6A, 10V,

Senarai harapan
TK11A55D(STA4,Q,M)
Toshiba Semiconductor and Storage

TK11A55D(STA4,Q,M)

bahagian bahagian: 31876

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 550V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 11A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 630 mOhm @ 5.5A, 10V,

Senarai harapan
TK20V60W,LVQ
Toshiba Semiconductor and Storage

TK20V60W,LVQ

bahagian bahagian: 26594

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 20A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 170 mOhm @ 10A, 10V,

Senarai harapan
T2N7002AK,LM
Toshiba Semiconductor and Storage

T2N7002AK,LM

bahagian bahagian: 154374

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 200mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 3.9 Ohm @ 100mA, 10V,

Senarai harapan
TK14A55D(STA4,Q,M)
Toshiba Semiconductor and Storage

TK14A55D(STA4,Q,M)

bahagian bahagian: 26114

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 550V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 14A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 370 mOhm @ 7A, 10V,

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