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Transistor - FET, MOSFET - Bujang

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  • Transistor - FET, MOSFET - Bujang
TPC8018-H(TE12LQM)
Toshiba Semiconductor and Storage

TPC8018-H(TE12LQM)

bahagian bahagian: 679

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 18A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 4.6 mOhm @ 9A, 10V,

Senarai harapan
TPCA8A02-H(TE12LQM
Toshiba Semiconductor and Storage

TPCA8A02-H(TE12LQM

bahagian bahagian: 6139

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 34A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 5.3 mOhm @ 17A, 10V,

Senarai harapan
TPC6006-H(TE85L,F)
Toshiba Semiconductor and Storage

TPC6006-H(TE85L,F)

bahagian bahagian: 613

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.9A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 75 mOhm @ 1.9A, 10V,

Senarai harapan
TPC8A02-H(TE12L,Q)
Toshiba Semiconductor and Storage

TPC8A02-H(TE12L,Q)

bahagian bahagian: 6153

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 16A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 5.6 mOhm @ 8A, 10V,

Senarai harapan
TPC8115(TE12L,Q,M)
Toshiba Semiconductor and Storage

TPC8115(TE12L,Q,M)

bahagian bahagian: 662

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 10A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.8V, 4.5V, Rds On (Maks) @ Id, Vgs: 10 mOhm @ 5A, 4.5V,

Senarai harapan
SSM6J206FE(TE85L,F
Toshiba Semiconductor and Storage

SSM6J206FE(TE85L,F

bahagian bahagian: 122160

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.8V, 4V, Rds On (Maks) @ Id, Vgs: 130 mOhm @ 1A, 4V,

Senarai harapan
SSM6K211FE,LF
Toshiba Semiconductor and Storage

SSM6K211FE,LF

bahagian bahagian: 118254

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.2A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.5V, 4.5V, Rds On (Maks) @ Id, Vgs: 47 mOhm @ 2A, 4.5V,

Senarai harapan
TPC6107(TE85L,F,M)
Toshiba Semiconductor and Storage

TPC6107(TE85L,F,M)

bahagian bahagian: 696

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.5A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 2V, 4.5V, Rds On (Maks) @ Id, Vgs: 55 mOhm @ 2.2A, 4.5V,

Senarai harapan
TPCA8011-H(TE12LQM
Toshiba Semiconductor and Storage

TPCA8011-H(TE12LQM

bahagian bahagian: 702

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 40A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 2.5V, 4.5V, Rds On (Maks) @ Id, Vgs: 3.5 mOhm @ 20A, 4.5V,

Senarai harapan
TPCA8023-H(TE12LQM
Toshiba Semiconductor and Storage

TPCA8023-H(TE12LQM

bahagian bahagian: 617

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 21A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 12.9 mOhm @ 11A, 10V,

Senarai harapan
SSM6P16FE(TE85L,F)
Toshiba Semiconductor and Storage

SSM6P16FE(TE85L,F)

bahagian bahagian: 122091

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 100mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.5V, 4V, Rds On (Maks) @ Id, Vgs: 8 Ohm @ 10mA, 4V,

Senarai harapan
TK60D08J1(Q)
Toshiba Semiconductor and Storage

TK60D08J1(Q)

bahagian bahagian: 605

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 75V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 60A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 7.8 mOhm @ 30A, 10V,

Senarai harapan
TPC8035-H(TE12L,QM
Toshiba Semiconductor and Storage

TPC8035-H(TE12L,QM

bahagian bahagian: 724

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 18A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 3.2 mOhm @ 9A, 10V,

Senarai harapan
TK55D10J1(Q)
Toshiba Semiconductor and Storage

TK55D10J1(Q)

bahagian bahagian: 607

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 55A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 10.5 mOhm @ 27A, 10V,

Senarai harapan
TPC8033-H(TE12LQM)
Toshiba Semiconductor and Storage

TPC8033-H(TE12LQM)

bahagian bahagian: 654

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 17A (Ta), Rds On (Maks) @ Id, Vgs: 5.3 mOhm @ 8.5A, 10V,

Senarai harapan
TPH4R003NL,L1Q
Toshiba Semiconductor and Storage

TPH4R003NL,L1Q

bahagian bahagian: 177522

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 40A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 4 mOhm @ 20A, 10V,

Senarai harapan
TK15A60U(STA4,Q,M)
Toshiba Semiconductor and Storage

TK15A60U(STA4,Q,M)

bahagian bahagian: 19386

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 15A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 300 mOhm @ 7.5A, 10V,

Senarai harapan
TPC6109-H(TE85L,FM
Toshiba Semiconductor and Storage

TPC6109-H(TE85L,FM

bahagian bahagian: 580

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 59 mOhm @ 2.5A, 10V,

Senarai harapan
TPH5R906NH,L1Q
Toshiba Semiconductor and Storage

TPH5R906NH,L1Q

bahagian bahagian: 101405

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 28A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 5.9 mOhm @ 14A, 10V,

Senarai harapan
TPN2R703NL,L1Q
Toshiba Semiconductor and Storage

TPN2R703NL,L1Q

bahagian bahagian: 157904

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 45A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 2.7 mOhm @ 22.5A, 10V,

Senarai harapan
TPH3R203NL,L1Q
Toshiba Semiconductor and Storage

TPH3R203NL,L1Q

bahagian bahagian: 152151

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 47A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 3.2 mOhm @ 23.5A, 10V,

Senarai harapan
TPN1R603PL,L1Q
Toshiba Semiconductor and Storage

TPN1R603PL,L1Q

bahagian bahagian: 133183

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 80A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 1.6 mOhm @ 40A, 10V,

Senarai harapan
TPN4R712MD,L1Q
Toshiba Semiconductor and Storage

TPN4R712MD,L1Q

bahagian bahagian: 127241

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 36A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 2.5V, 4.5V, Rds On (Maks) @ Id, Vgs: 4.7 mOhm @ 18A, 4.5V,

Senarai harapan
TPW1R005PL,L1Q
Toshiba Semiconductor and Storage

TPW1R005PL,L1Q

bahagian bahagian: 58868

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 45V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 300A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V,

Senarai harapan
TPH7R506NH,L1Q
Toshiba Semiconductor and Storage

TPH7R506NH,L1Q

bahagian bahagian: 117819

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 22A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 7.5 mOhm @ 11A, 10V,

Senarai harapan
TPH4R008NH,L1Q
Toshiba Semiconductor and Storage

TPH4R008NH,L1Q

bahagian bahagian: 56308

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 80V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 60A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 4 mOhm @ 30A, 10V,

Senarai harapan
TPCA8051-H(T2L1,VM
Toshiba Semiconductor and Storage

TPCA8051-H(T2L1,VM

bahagian bahagian: 50520

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 80V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 28A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 9.4 mOhm @ 14A, 10V,

Senarai harapan
TPHR6503PL,L1Q
Toshiba Semiconductor and Storage

TPHR6503PL,L1Q

bahagian bahagian: 89887

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 150A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 0.65 mOhm @ 50A, 10V,

Senarai harapan
TPH1R204PL,L1Q
Toshiba Semiconductor and Storage

TPH1R204PL,L1Q

bahagian bahagian: 127090

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 150A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 1.24 mOhm @ 50A, 10V,

Senarai harapan
TPHR9203PL,L1Q
Toshiba Semiconductor and Storage

TPHR9203PL,L1Q

bahagian bahagian: 87586

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 150A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V,

Senarai harapan
TPN7R506NH,L1Q
Toshiba Semiconductor and Storage

TPN7R506NH,L1Q

bahagian bahagian: 186783

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 26A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 6.5V, 10V, Rds On (Maks) @ Id, Vgs: 7.5 mOhm @ 13A, 10V,

Senarai harapan
TPW4R008NH,L1Q
Toshiba Semiconductor and Storage

TPW4R008NH,L1Q

bahagian bahagian: 87538

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 80V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 116A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 4 mOhm @ 50A, 10V,

Senarai harapan
TPCF8104(TE85L,F,M
Toshiba Semiconductor and Storage

TPCF8104(TE85L,F,M

bahagian bahagian: 9727

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 28 mOhm @ 3A, 10V,

Senarai harapan
TPCF8B01(TE85L,F,M
Toshiba Semiconductor and Storage

TPCF8B01(TE85L,F,M

bahagian bahagian: 9844

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.7A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.8V, 4.5V, Rds On (Maks) @ Id, Vgs: 110 mOhm @ 1.4A, 4.5V,

Senarai harapan
TPCF8A01(TE85L)
Toshiba Semiconductor and Storage

TPCF8A01(TE85L)

bahagian bahagian: 9829

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 2V, 4.5V, Rds On (Maks) @ Id, Vgs: 49 mOhm @ 1.5A, 4.5V,

Senarai harapan
TPCF8101(TE85L,F,M
Toshiba Semiconductor and Storage

TPCF8101(TE85L,F,M

bahagian bahagian: 6036

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 12V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.8V, 4.5V, Rds On (Maks) @ Id, Vgs: 28 mOhm @ 3A, 4.5V,

Senarai harapan