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Transistor - FET, MOSFET - Bujang

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  • Transistor - FET, MOSFET - Bujang
SSM6K202FE,LF
Toshiba Semiconductor and Storage

SSM6K202FE,LF

bahagian bahagian: 167951

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.3A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.8V, 4V, Rds On (Maks) @ Id, Vgs: 85 mOhm @ 1.5A, 4V,

Senarai harapan
TPCA8010-H(TE12LQM
Toshiba Semiconductor and Storage

TPCA8010-H(TE12LQM

bahagian bahagian: 643

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 200V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.5A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 450 mOhm @ 2.7A, 10V,

Senarai harapan
TPC8042(TE12L,Q,M)
Toshiba Semiconductor and Storage

TPC8042(TE12L,Q,M)

bahagian bahagian: 758

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 18A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 3.4 mOhm @ 9A, 10V,

Senarai harapan
TPC8113(TE12L,Q)
Toshiba Semiconductor and Storage

TPC8113(TE12L,Q)

bahagian bahagian: 625

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 11A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4V, 10V, Rds On (Maks) @ Id, Vgs: 10 mOhm @ 5.5A, 10V,

Senarai harapan
TPC8051-H(TE12L,Q)
Toshiba Semiconductor and Storage

TPC8051-H(TE12L,Q)

bahagian bahagian: 764

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 80V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 13A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 9.7 mOhm @ 6.5A, 10V,

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SSM6J216FE,LF
Toshiba Semiconductor and Storage

SSM6J216FE,LF

bahagian bahagian: 13269

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 12V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.8A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.5V, 4.5V, Rds On (Maks) @ Id, Vgs: 32 mOhm @ 3.5A, 4.5V,

Senarai harapan
TPCA8005-H(TE12LQM
Toshiba Semiconductor and Storage

TPCA8005-H(TE12LQM

bahagian bahagian: 644

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 27A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 9 mOhm @ 14A, 10V,

Senarai harapan
TPCA8105(TE12L,Q,M
Toshiba Semiconductor and Storage

TPCA8105(TE12L,Q,M

bahagian bahagian: 711

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 12V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.8V, 4.5V, Rds On (Maks) @ Id, Vgs: 33 mOhm @ 3A, 4.5V,

Senarai harapan
TPCA8036-H(TE12L,Q
Toshiba Semiconductor and Storage

TPCA8036-H(TE12L,Q

bahagian bahagian: 729

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 38A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 4.2 mOhm @ 19A, 10V,

Senarai harapan
TPC8014(TE12L,Q,M)
Toshiba Semiconductor and Storage

TPC8014(TE12L,Q,M)

bahagian bahagian: 630

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 11A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 14 mOhm @ 5.5A, 10V,

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TPCA8008-H(TE12LQM
Toshiba Semiconductor and Storage

TPCA8008-H(TE12LQM

bahagian bahagian: 655

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 250V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 580 mOhm @ 2A, 10V,

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TPCA8012-H(TE12LQM
Toshiba Semiconductor and Storage

TPCA8012-H(TE12LQM

bahagian bahagian: 634

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 40A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 4.9 mOhm @ 20A, 10V,

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TK50P04M1(T6RSS-Q)
Toshiba Semiconductor and Storage

TK50P04M1(T6RSS-Q)

bahagian bahagian: 185151

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 50A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 8.7 mOhm @ 25A, 10V,

Senarai harapan
TPCP8003-H(TE85L,F
Toshiba Semiconductor and Storage

TPCP8003-H(TE85L,F

bahagian bahagian: 798

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.2A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 180 mOhm @ 1.1A, 10V,

Senarai harapan
TPC8036-H(TE12L,QM
Toshiba Semiconductor and Storage

TPC8036-H(TE12L,QM

bahagian bahagian: 6159

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 18A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 4.5 mOhm @ 9A, 10V,

Senarai harapan
TPCA8103(TE12L,Q,M
Toshiba Semiconductor and Storage

TPCA8103(TE12L,Q,M

bahagian bahagian: 630

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 40A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4V, 10V, Rds On (Maks) @ Id, Vgs: 4.2 mOhm @ 20A, 10V,

Senarai harapan
SSM5N15FE(TE85L,F)
Toshiba Semiconductor and Storage

SSM5N15FE(TE85L,F)

bahagian bahagian: 164036

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 100mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 2.5V, 4V, Rds On (Maks) @ Id, Vgs: 4 Ohm @ 10mA, 4V,

Senarai harapan
TPC8021-H(TE12LQ,M
Toshiba Semiconductor and Storage

TPC8021-H(TE12LQ,M

bahagian bahagian: 614

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 11A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 17 mOhm @ 5.5A, 10V,

Senarai harapan
TPCA8003-H(TE12LQM
Toshiba Semiconductor and Storage

TPCA8003-H(TE12LQM

bahagian bahagian: 635

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 35A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 6.6 mOhm @ 18A, 10V,

Senarai harapan
TPC8026(TE12L,Q,M)
Toshiba Semiconductor and Storage

TPC8026(TE12L,Q,M)

bahagian bahagian: 726

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 13A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 6.6 mOhm @ 6.5A, 10V,

Senarai harapan
TPC8022-H(TE12LQ,M
Toshiba Semiconductor and Storage

TPC8022-H(TE12LQ,M

bahagian bahagian: 687

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 7.5A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 27 mOhm @ 3.8A, 10V,

Senarai harapan
TPCA8A01-H(TE12L,Q
Toshiba Semiconductor and Storage

TPCA8A01-H(TE12L,Q

bahagian bahagian: 677

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 36A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 5.6 mOhm @ 18A, 10V,

Senarai harapan
TPC8038-H(TE12L,Q)
Toshiba Semiconductor and Storage

TPC8038-H(TE12L,Q)

bahagian bahagian: 677

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 12A (Ta), Rds On (Maks) @ Id, Vgs: 11.4 mOhm @ 6A, 10V,

Senarai harapan
TPCP8001-H(TE85LFM
Toshiba Semiconductor and Storage

TPCP8001-H(TE85LFM

bahagian bahagian: 692

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 7.2A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 16 mOhm @ 3.6A, 10V,

Senarai harapan
TPCA8A04-H(TE12L,Q
Toshiba Semiconductor and Storage

TPCA8A04-H(TE12L,Q

bahagian bahagian: 747

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 44A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 3.2 mOhm @ 22A, 10V,

Senarai harapan
TPCA8031-H(TE12L,Q
Toshiba Semiconductor and Storage

TPCA8031-H(TE12L,Q

bahagian bahagian: 612

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 24A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 11 mOhm @ 12A, 10V,

Senarai harapan
TPCF8102(TE85L,F,M
Toshiba Semiconductor and Storage

TPCF8102(TE85L,F,M

bahagian bahagian: 637

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.8V, 4.5V, Rds On (Maks) @ Id, Vgs: 30 mOhm @ 3A, 4.5V,

Senarai harapan
TK70D06J1(Q)
Toshiba Semiconductor and Storage

TK70D06J1(Q)

bahagian bahagian: 6092

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 70A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 6.4 mOhm @ 35A, 10V,

Senarai harapan
SSM6J213FE(TE85L,F
Toshiba Semiconductor and Storage

SSM6J213FE(TE85L,F

bahagian bahagian: 116856

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.6A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.5V, 4.5V, Rds On (Maks) @ Id, Vgs: 103 mOhm @ 1.5A, 4.5V,

Senarai harapan
TPC8031-H(TE12LQM)
Toshiba Semiconductor and Storage

TPC8031-H(TE12LQM)

bahagian bahagian: 703

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 11A (Ta), Rds On (Maks) @ Id, Vgs: 13.3 mOhm @ 5.5A, 10V,

Senarai harapan
TPCP8005-H(TE85L,F
Toshiba Semiconductor and Storage

TPCP8005-H(TE85L,F

bahagian bahagian: 736

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 11A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 12.9 mOhm @ 5.5A, 10V,

Senarai harapan
TPC8032-H(TE12LQM)
Toshiba Semiconductor and Storage

TPC8032-H(TE12LQM)

bahagian bahagian: 631

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 15A (Ta), Rds On (Maks) @ Id, Vgs: 6.5 mOhm @ 7.5A, 10V,

Senarai harapan
TPC8110(TE12L,Q,M)
Toshiba Semiconductor and Storage

TPC8110(TE12L,Q,M)

bahagian bahagian: 616

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4V, 10V, Rds On (Maks) @ Id, Vgs: 25 mOhm @ 4A, 10V,

Senarai harapan
TK5P60W,RVQ
Toshiba Semiconductor and Storage

TK5P60W,RVQ

bahagian bahagian: 90358

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.4A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 900 mOhm @ 2.7A, 10V,

Senarai harapan
TK8P60W5,RVQ
Toshiba Semiconductor and Storage

TK8P60W5,RVQ

bahagian bahagian: 102262

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 560 mOhm @ 4A, 10V,

Senarai harapan
TK20J60U(F)
Toshiba Semiconductor and Storage

TK20J60U(F)

bahagian bahagian: 12228

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 20A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 190 mOhm @ 10A, 10V,

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