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Optoisolator - Transistor, Output Fotovoltaik

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  • Optoisolator - Transistor, Output Fotovoltaik
TLP290(GR-TP,E)
Toshiba Semiconductor and Storage

TLP290(GR-TP,E)

bahagian bahagian: 5818

Bilangan Saluran: 1, Voltan - Pengasingan: 3750Vrms, Nisbah Pindahan Semasa (Min): 100% @ 5mA, Nisbah Pindahan Semasa (Maks): 300% @ 5mA, Masa Hidupkan / Matikan (Jenis): 7µs, 7µs, Masa Naik / Kejatuhan (Jenis): 4µs, 7µs,

Senarai harapan
TLP290(TP,SE
Toshiba Semiconductor and Storage

TLP290(TP,SE

bahagian bahagian: 104982

Bilangan Saluran: 1, Voltan - Pengasingan: 3750Vrms, Nisbah Pindahan Semasa (Min): 50% @ 5mA, Nisbah Pindahan Semasa (Maks): 600% @ 5mA, Masa Hidupkan / Matikan (Jenis): 3µs, 3µs, Masa Naik / Kejatuhan (Jenis): 2µs, 3µs,

Senarai harapan
TLP385(D4GB-TL,E
Toshiba Semiconductor and Storage

TLP385(D4GB-TL,E

bahagian bahagian: 5855

Bilangan Saluran: 1, Voltan - Pengasingan: 5000Vrms, Nisbah Pindahan Semasa (Min): 100% @ 5mA, Nisbah Pindahan Semasa (Maks): 600% @ 5mA, Masa Hidupkan / Matikan (Jenis): 3µs, 3µs, Masa Naik / Kejatuhan (Jenis): 2µs, 3µs,

Senarai harapan
TLP183(GR,E
Toshiba Semiconductor and Storage

TLP183(GR,E

bahagian bahagian: 5891

Bilangan Saluran: 1, Voltan - Pengasingan: 3750Vrms, Nisbah Pindahan Semasa (Min): 100% @ 5mA, Nisbah Pindahan Semasa (Maks): 300% @ 5mA, Masa Hidupkan / Matikan (Jenis): 3µs, 3µs, Masa Naik / Kejatuhan (Jenis): 2µs, 3µs,

Senarai harapan
TLP624-2(F)
Toshiba Semiconductor and Storage

TLP624-2(F)

bahagian bahagian: 5918

Bilangan Saluran: 2, Voltan - Pengasingan: 5000Vrms, Nisbah Pindahan Semasa (Min): 100% @ 1mA, Nisbah Pindahan Semasa (Maks): 1200% @ 1mA, Masa Hidupkan / Matikan (Jenis): 10µs, 8µs, Masa Naik / Kejatuhan (Jenis): 8µs, 8µs,

Senarai harapan
TLP388(GB-TPR,E
Toshiba Semiconductor and Storage

TLP388(GB-TPR,E

bahagian bahagian: 5959

Bilangan Saluran: 1, Voltan - Pengasingan: 5000Vrms, Nisbah Pindahan Semasa (Min): 100% @ 5mA, Nisbah Pindahan Semasa (Maks): 600% @ 5mA, Masa Hidupkan / Matikan (Jenis): 3µs, 3µs, Masa Naik / Kejatuhan (Jenis): 2µs, 3µs,

Senarai harapan
TLP292-4(GB-TP,E
Toshiba Semiconductor and Storage

TLP292-4(GB-TP,E

bahagian bahagian: 151762

Bilangan Saluran: 4, Voltan - Pengasingan: 3750Vrms, Nisbah Pindahan Semasa (Min): 100% @ 5mA, Nisbah Pindahan Semasa (Maks): 600% @ 5mA, Masa Hidupkan / Matikan (Jenis): 3µs, 3µs, Masa Naik / Kejatuhan (Jenis): 2µs, 3µs,

Senarai harapan
TLP781(D4-GR,F)
Toshiba Semiconductor and Storage

TLP781(D4-GR,F)

bahagian bahagian: 5796

Bilangan Saluran: 1, Voltan - Pengasingan: 5000Vrms, Nisbah Pindahan Semasa (Min): 100% @ 5mA, Nisbah Pindahan Semasa (Maks): 300% @ 5mA, Masa Hidupkan / Matikan (Jenis): 3µs, 3µs, Masa Naik / Kejatuhan (Jenis): 2µs, 3µs,

Senarai harapan
TLP293-4(LA-TR,E
Toshiba Semiconductor and Storage

TLP293-4(LA-TR,E

bahagian bahagian: 160461

Bilangan Saluran: 4, Voltan - Pengasingan: 3750Vrms, Nisbah Pindahan Semasa (Min): 50% @ 500µA, Nisbah Pindahan Semasa (Maks): 600% @ 500µA, Masa Hidupkan / Matikan (Jenis): 3µs, 3µs, Masa Naik / Kejatuhan (Jenis): 2µs, 3µs,

Senarai harapan
TLP185(BLL-TL,SE
Toshiba Semiconductor and Storage

TLP185(BLL-TL,SE

bahagian bahagian: 109293

Bilangan Saluran: 1, Voltan - Pengasingan: 3750Vrms, Nisbah Pindahan Semasa (Min): 200% @ 5mA, Nisbah Pindahan Semasa (Maks): 400% @ 5mA, Masa Hidupkan / Matikan (Jenis): 3µs, 3µs, Masa Naik / Kejatuhan (Jenis): 2µs, 3µs,

Senarai harapan
TLP185(BLL-TR,SE
Toshiba Semiconductor and Storage

TLP185(BLL-TR,SE

bahagian bahagian: 5791

Bilangan Saluran: 1, Voltan - Pengasingan: 3750Vrms, Nisbah Pindahan Semasa (Min): 200% @ 5mA, Nisbah Pindahan Semasa (Maks): 400% @ 5mA, Masa Hidupkan / Matikan (Jenis): 3µs, 3µs, Masa Naik / Kejatuhan (Jenis): 2µs, 3µs,

Senarai harapan
TLP183(YH-TPL,E
Toshiba Semiconductor and Storage

TLP183(YH-TPL,E

bahagian bahagian: 165231

Bilangan Saluran: 1, Voltan - Pengasingan: 3750Vrms, Nisbah Pindahan Semasa (Min): 75% @ 5mA, Nisbah Pindahan Semasa (Maks): 150% @ 5mA, Masa Hidupkan / Matikan (Jenis): 3µs, 3µs, Masa Naik / Kejatuhan (Jenis): 2µs, 3µs,

Senarai harapan
TLP385(GR-TPL,E
Toshiba Semiconductor and Storage

TLP385(GR-TPL,E

bahagian bahagian: 5763

Bilangan Saluran: 1, Voltan - Pengasingan: 5000Vrms, Nisbah Pindahan Semasa (Min): 100% @ 5mA, Nisbah Pindahan Semasa (Maks): 300% @ 5mA, Masa Hidupkan / Matikan (Jenis): 3µs, 3µs, Masa Naik / Kejatuhan (Jenis): 2µs, 3µs,

Senarai harapan
TLP385(GR,E
Toshiba Semiconductor and Storage

TLP385(GR,E

bahagian bahagian: 5942

Bilangan Saluran: 1, Voltan - Pengasingan: 5000Vrms, Nisbah Pindahan Semasa (Min): 100% @ 5mA, Nisbah Pindahan Semasa (Maks): 300% @ 5mA, Masa Hidupkan / Matikan (Jenis): 3µs, 3µs, Masa Naik / Kejatuhan (Jenis): 2µs, 3µs,

Senarai harapan
TLP292(Y-TPL,E
Toshiba Semiconductor and Storage

TLP292(Y-TPL,E

bahagian bahagian: 152156

Bilangan Saluran: 1, Voltan - Pengasingan: 3750Vrms, Nisbah Pindahan Semasa (Min): 50% @ 5mA, Nisbah Pindahan Semasa (Maks): 150% @ 5mA, Masa Hidupkan / Matikan (Jenis): 3µs, 3µs, Masa Naik / Kejatuhan (Jenis): 2µs, 3µs,

Senarai harapan
TLP191B(TPR,U,C,F)
Toshiba Semiconductor and Storage

TLP191B(TPR,U,C,F)

bahagian bahagian: 53983

Bilangan Saluran: 1, Voltan - Pengasingan: 2500Vrms, Masa Hidupkan / Matikan (Jenis): 200µs, 3ms,

Senarai harapan
TLP185(TPR,SE
Toshiba Semiconductor and Storage

TLP185(TPR,SE

bahagian bahagian: 2579

Bilangan Saluran: 1, Voltan - Pengasingan: 3750Vrms, Nisbah Pindahan Semasa (Min): 50% @ 5mA, Nisbah Pindahan Semasa (Maks): 600% @ 5mA, Masa Hidupkan / Matikan (Jenis): 3µs, 3µs, Masa Naik / Kejatuhan (Jenis): 2µs, 3µs,

Senarai harapan
TLP290(TP,E)
Toshiba Semiconductor and Storage

TLP290(TP,E)

bahagian bahagian: 5917

Bilangan Saluran: 1, Voltan - Pengasingan: 3750Vrms, Nisbah Pindahan Semasa (Min): 50% @ 5mA, Nisbah Pindahan Semasa (Maks): 400% @ 5mA, Masa Hidupkan / Matikan (Jenis): 7µs, 7µs, Masa Naik / Kejatuhan (Jenis): 4µs, 7µs,

Senarai harapan
TLP185(GB,SE
Toshiba Semiconductor and Storage

TLP185(GB,SE

bahagian bahagian: 5934

Bilangan Saluran: 1, Voltan - Pengasingan: 3750Vrms, Nisbah Pindahan Semasa (Min): 100% @ 5mA, Nisbah Pindahan Semasa (Maks): 600% @ 5mA, Masa Hidupkan / Matikan (Jenis): 3µs, 3µs, Masa Naik / Kejatuhan (Jenis): 2µs, 3µs,

Senarai harapan
TLP385(D4YH-TR,E
Toshiba Semiconductor and Storage

TLP385(D4YH-TR,E

bahagian bahagian: 5933

Bilangan Saluran: 1, Voltan - Pengasingan: 5000Vrms, Nisbah Pindahan Semasa (Min): 75% @ 5mA, Nisbah Pindahan Semasa (Maks): 150% @ 5mA, Masa Hidupkan / Matikan (Jenis): 3µs, 3µs, Masa Naik / Kejatuhan (Jenis): 2µs, 3µs,

Senarai harapan
TLP291(GR-TP,SE
Toshiba Semiconductor and Storage

TLP291(GR-TP,SE

bahagian bahagian: 145661

Bilangan Saluran: 1, Voltan - Pengasingan: 3750Vrms, Nisbah Pindahan Semasa (Min): 100% @ 5mA, Nisbah Pindahan Semasa (Maks): 300% @ 5mA, Masa Hidupkan / Matikan (Jenis): 3µs, 3µs, Masa Naik / Kejatuhan (Jenis): 2µs, 3µs,

Senarai harapan
TLP109(IGM-TPL,E
Toshiba Semiconductor and Storage

TLP109(IGM-TPL,E

bahagian bahagian: 172094

Bilangan Saluran: 1, Voltan - Pengasingan: 3750Vrms, Nisbah Pindahan Semasa (Min): 25% @ 10mA, Nisbah Pindahan Semasa (Maks): 75% @ 10mA, Masa Hidupkan / Matikan (Jenis): 450ns, 450ns,

Senarai harapan
TLP785(D4-GR,F
Toshiba Semiconductor and Storage

TLP785(D4-GR,F

bahagian bahagian: 5770

Bilangan Saluran: 1, Voltan - Pengasingan: 5000Vrms, Nisbah Pindahan Semasa (Min): 50% @ 5mA, Nisbah Pindahan Semasa (Maks): 600% @ 5mA, Masa Hidupkan / Matikan (Jenis): 3µs, 3µs, Masa Naik / Kejatuhan (Jenis): 2µs, 3µs,

Senarai harapan
TLP124(BV-TPR,F)
Toshiba Semiconductor and Storage

TLP124(BV-TPR,F)

bahagian bahagian: 136592

Bilangan Saluran: 1, Voltan - Pengasingan: 3750Vrms, Nisbah Pindahan Semasa (Min): 200% @ 1mA, Nisbah Pindahan Semasa (Maks): 1200% @ 1mA, Masa Hidupkan / Matikan (Jenis): 10µs, 8µs, Masa Naik / Kejatuhan (Jenis): 8µs, 8µs,

Senarai harapan
TLP182(TPL,E
Toshiba Semiconductor and Storage

TLP182(TPL,E

bahagian bahagian: 126008

Bilangan Saluran: 1, Voltan - Pengasingan: 3750Vrms, Nisbah Pindahan Semasa (Min): 50% @ 5mA, Nisbah Pindahan Semasa (Maks): 600% @ 5mA, Masa Hidupkan / Matikan (Jenis): 3µs, 3µs, Masa Naik / Kejatuhan (Jenis): 2µs, 3µs,

Senarai harapan
TLP184(GR-TPR,SE
Toshiba Semiconductor and Storage

TLP184(GR-TPR,SE

bahagian bahagian: 5788

Bilangan Saluran: 1, Voltan - Pengasingan: 3750Vrms, Nisbah Pindahan Semasa (Min): 100% @ 5mA, Nisbah Pindahan Semasa (Maks): 300% @ 5mA, Masa Hidupkan / Matikan (Jenis): 3µs, 3µs, Masa Naik / Kejatuhan (Jenis): 2µs, 3µs,

Senarai harapan
TLP2303(TPR,E
Toshiba Semiconductor and Storage

TLP2303(TPR,E

bahagian bahagian: 5972

Bilangan Saluran: 1, Voltan - Pengasingan: 3750Vrms, Nisbah Pindahan Semasa (Min): 500% @ 5mA,

Senarai harapan
TLP183(GRH-TPL,E
Toshiba Semiconductor and Storage

TLP183(GRH-TPL,E

bahagian bahagian: 143341

Bilangan Saluran: 1, Voltan - Pengasingan: 3750Vrms, Nisbah Pindahan Semasa (Min): 150% @ 5mA, Nisbah Pindahan Semasa (Maks): 300% @ 5mA, Masa Hidupkan / Matikan (Jenis): 3µs, 3µs, Masa Naik / Kejatuhan (Jenis): 2µs, 3µs,

Senarai harapan
TLP183(BLL-TPL,E
Toshiba Semiconductor and Storage

TLP183(BLL-TPL,E

bahagian bahagian: 194118

Bilangan Saluran: 1, Voltan - Pengasingan: 3750Vrms, Nisbah Pindahan Semasa (Min): 200% @ 5mA, Nisbah Pindahan Semasa (Maks): 600% @ 5mA, Masa Hidupkan / Matikan (Jenis): 3µs, 3µs, Masa Naik / Kejatuhan (Jenis): 2µs, 3µs,

Senarai harapan
TLP293-4(TP,E
Toshiba Semiconductor and Storage

TLP293-4(TP,E

bahagian bahagian: 160452

Bilangan Saluran: 4, Voltan - Pengasingan: 3750Vrms, Nisbah Pindahan Semasa (Min): 50% @ 5mA, Nisbah Pindahan Semasa (Maks): 600% @ 5mA, Masa Hidupkan / Matikan (Jenis): 3µs, 3µs, Masa Naik / Kejatuhan (Jenis): 2µs, 3µs,

Senarai harapan
TLP2303(E
Toshiba Semiconductor and Storage

TLP2303(E

bahagian bahagian: 5767

Bilangan Saluran: 1, Voltan - Pengasingan: 3750Vrms, Nisbah Pindahan Semasa (Min): 500% @ 5mA,

Senarai harapan
TLP385(GB-TPL,E
Toshiba Semiconductor and Storage

TLP385(GB-TPL,E

bahagian bahagian: 5872

Bilangan Saluran: 1, Voltan - Pengasingan: 5000Vrms, Nisbah Pindahan Semasa (Min): 100% @ 5mA, Nisbah Pindahan Semasa (Maks): 600% @ 5mA, Masa Hidupkan / Matikan (Jenis): 3µs, 3µs, Masa Naik / Kejatuhan (Jenis): 2µs, 3µs,

Senarai harapan
TLP385(BLL-TPL,E
Toshiba Semiconductor and Storage

TLP385(BLL-TPL,E

bahagian bahagian: 6002

Bilangan Saluran: 1, Voltan - Pengasingan: 5000Vrms, Nisbah Pindahan Semasa (Min): 200% @ 5mA, Nisbah Pindahan Semasa (Maks): 400% @ 5mA, Masa Hidupkan / Matikan (Jenis): 3µs, 3µs, Masa Naik / Kejatuhan (Jenis): 2µs, 3µs,

Senarai harapan
TLP131(F)
Toshiba Semiconductor and Storage

TLP131(F)

bahagian bahagian: 61069

Bilangan Saluran: 1, Voltan - Pengasingan: 3750Vrms, Nisbah Pindahan Semasa (Min): 50% @ 5mA, Nisbah Pindahan Semasa (Maks): 600% @ 5mA, Masa Hidupkan / Matikan (Jenis): 3µs, 3µs, Masa Naik / Kejatuhan (Jenis): 2µs, 3µs,

Senarai harapan
TLP184(GB,E)
Toshiba Semiconductor and Storage

TLP184(GB,E)

bahagian bahagian: 109377

Bilangan Saluran: 1, Voltan - Pengasingan: 3750Vrms, Nisbah Pindahan Semasa (Min): 100% @ 5mA, Nisbah Pindahan Semasa (Maks): 400% @ 5mA, Masa Hidupkan / Matikan (Jenis): 9µs, 9µs, Masa Naik / Kejatuhan (Jenis): 5µs, 9µs,

Senarai harapan
TLP290(E)
Toshiba Semiconductor and Storage

TLP290(E)

bahagian bahagian: 99038

Bilangan Saluran: 1, Voltan - Pengasingan: 3750Vrms, Nisbah Pindahan Semasa (Min): 50% @ 5mA, Nisbah Pindahan Semasa (Maks): 400% @ 5mA, Masa Hidupkan / Matikan (Jenis): 7µs, 7µs, Masa Naik / Kejatuhan (Jenis): 4µs, 7µs,

Senarai harapan