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Optoisolator - Transistor, Output Fotovoltaik

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TLP184(TPL,E)
Toshiba Semiconductor and Storage

TLP184(TPL,E)

bahagian bahagian: 5337

Bilangan Saluran: 1, Voltan - Pengasingan: 3750Vrms, Nisbah Pindahan Semasa (Min): 50% @ 5mA, Nisbah Pindahan Semasa (Maks): 400% @ 5mA, Masa Hidupkan / Matikan (Jenis): 9µs, 9µs, Masa Naik / Kejatuhan (Jenis): 5µs, 9µs,

Senarai harapan
TLP631(BL,F)
Toshiba Semiconductor and Storage

TLP631(BL,F)

bahagian bahagian: 106577

Bilangan Saluran: 1, Voltan - Pengasingan: 5000Vrms, Nisbah Pindahan Semasa (Min): 200% @ 5mA, Nisbah Pindahan Semasa (Maks): 600% @ 5mA, Masa Hidupkan / Matikan (Jenis): 3µs, 3µs, Masa Naik / Kejatuhan (Jenis): 2µs, 3µs,

Senarai harapan
TLP293(E
Toshiba Semiconductor and Storage

TLP293(E

bahagian bahagian: 165593

Bilangan Saluran: 1, Voltan - Pengasingan: 3750Vrms, Nisbah Pindahan Semasa (Min): 50% @ 5mA, Nisbah Pindahan Semasa (Maks): 600% @ 5mA, Masa Hidupkan / Matikan (Jenis): 3µs, 3µs, Masa Naik / Kejatuhan (Jenis): 2µs, 3µs,

Senarai harapan
TLP385(D4YH-TL,E
Toshiba Semiconductor and Storage

TLP385(D4YH-TL,E

bahagian bahagian: 5334

Bilangan Saluran: 1, Voltan - Pengasingan: 5000Vrms, Nisbah Pindahan Semasa (Min): 75% @ 5mA, Nisbah Pindahan Semasa (Maks): 150% @ 5mA, Masa Hidupkan / Matikan (Jenis): 3µs, 3µs, Masa Naik / Kejatuhan (Jenis): 2µs, 3µs,

Senarai harapan
TLP292(TPL,E
Toshiba Semiconductor and Storage

TLP292(TPL,E

bahagian bahagian: 181329

Bilangan Saluran: 1, Voltan - Pengasingan: 3750Vrms, Nisbah Pindahan Semasa (Min): 50% @ 5mA, Nisbah Pindahan Semasa (Maks): 600% @ 5mA, Masa Hidupkan / Matikan (Jenis): 3µs, 3µs, Masa Naik / Kejatuhan (Jenis): 2µs, 3µs,

Senarai harapan
TLP385(YH,E
Toshiba Semiconductor and Storage

TLP385(YH,E

bahagian bahagian: 2573

Bilangan Saluran: 1, Voltan - Pengasingan: 5000Vrms, Nisbah Pindahan Semasa (Min): 75% @ 5mA, Nisbah Pindahan Semasa (Maks): 150% @ 5mA, Masa Hidupkan / Matikan (Jenis): 3µs, 3µs, Masa Naik / Kejatuhan (Jenis): 2µs, 3µs,

Senarai harapan
TLP183(GB,E
Toshiba Semiconductor and Storage

TLP183(GB,E

bahagian bahagian: 5401

Bilangan Saluran: 1, Voltan - Pengasingan: 3750Vrms, Nisbah Pindahan Semasa (Min): 100% @ 5mA, Nisbah Pindahan Semasa (Maks): 600% @ 5mA, Masa Hidupkan / Matikan (Jenis): 3µs, 3µs, Masa Naik / Kejatuhan (Jenis): 2µs, 3µs,

Senarai harapan
TLP184(TPL,SE
Toshiba Semiconductor and Storage

TLP184(TPL,SE

bahagian bahagian: 151820

Bilangan Saluran: 1, Voltan - Pengasingan: 3750Vrms, Nisbah Pindahan Semasa (Min): 50% @ 5mA, Nisbah Pindahan Semasa (Maks): 600% @ 5mA, Masa Hidupkan / Matikan (Jenis): 3µs, 3µs, Masa Naik / Kejatuhan (Jenis): 2µs, 3µs,

Senarai harapan
TLP293(BL,E
Toshiba Semiconductor and Storage

TLP293(BL,E

bahagian bahagian: 115682

Bilangan Saluran: 1, Voltan - Pengasingan: 3750Vrms, Nisbah Pindahan Semasa (Min): 200% @ 5mA, Nisbah Pindahan Semasa (Maks): 600% @ 5mA, Masa Hidupkan / Matikan (Jenis): 3µs, 3µs, Masa Naik / Kejatuhan (Jenis): 2µs, 3µs,

Senarai harapan
TLP291(GR-TP,E)
Toshiba Semiconductor and Storage

TLP291(GR-TP,E)

bahagian bahagian: 5251

Bilangan Saluran: 1, Voltan - Pengasingan: 3750Vrms, Nisbah Pindahan Semasa (Min): 100% @ 5mA, Nisbah Pindahan Semasa (Maks): 300% @ 5mA, Masa Hidupkan / Matikan (Jenis): 7µs, 7µs, Masa Naik / Kejatuhan (Jenis): 4µs, 7µs,

Senarai harapan
TLP785F(D4GLT7,F
Toshiba Semiconductor and Storage

TLP785F(D4GLT7,F

bahagian bahagian: 5248

Bilangan Saluran: 1, Voltan - Pengasingan: 5000Vrms, Nisbah Pindahan Semasa (Min): 50% @ 5mA, Nisbah Pindahan Semasa (Maks): 600% @ 5mA, Masa Hidupkan / Matikan (Jenis): 3µs, 3µs, Masa Naik / Kejatuhan (Jenis): 2µs, 3µs,

Senarai harapan
TLP285(TP,F)
Toshiba Semiconductor and Storage

TLP285(TP,F)

bahagian bahagian: 5450

Bilangan Saluran: 1, Voltan - Pengasingan: 3750Vrms, Nisbah Pindahan Semasa (Min): 50% @ 5mA, Nisbah Pindahan Semasa (Maks): 600% @ 5mA, Masa Hidupkan / Matikan (Jenis): 3µs, 3µs, Masa Naik / Kejatuhan (Jenis): 2µs, 3µs,

Senarai harapan
TLP291(TP,SE
Toshiba Semiconductor and Storage

TLP291(TP,SE

bahagian bahagian: 104212

Bilangan Saluran: 1, Voltan - Pengasingan: 3750Vrms, Nisbah Pindahan Semasa (Min): 50% @ 5mA, Nisbah Pindahan Semasa (Maks): 600% @ 5mA, Masa Hidupkan / Matikan (Jenis): 3µs, 3µs, Masa Naik / Kejatuhan (Jenis): 2µs, 3µs,

Senarai harapan
TLP292-4(LA-TP,E
Toshiba Semiconductor and Storage

TLP292-4(LA-TP,E

bahagian bahagian: 151695

Bilangan Saluran: 4, Voltan - Pengasingan: 3750Vrms, Nisbah Pindahan Semasa (Min): 50% @ 500µA, Nisbah Pindahan Semasa (Maks): 600% @ 500µA, Masa Hidupkan / Matikan (Jenis): 3µs, 3µs, Masa Naik / Kejatuhan (Jenis): 2µs, 3µs,

Senarai harapan
TLP291(V4GBTP,SE
Toshiba Semiconductor and Storage

TLP291(V4GBTP,SE

bahagian bahagian: 5431

Bilangan Saluran: 1, Voltan - Pengasingan: 3750Vrms, Nisbah Pindahan Semasa (Min): 100% @ 5mA, Nisbah Pindahan Semasa (Maks): 600% @ 5mA, Masa Hidupkan / Matikan (Jenis): 3µs, 3µs, Masa Naik / Kejatuhan (Jenis): 2µs, 3µs,

Senarai harapan
TLP290(GR-TP,SE
Toshiba Semiconductor and Storage

TLP290(GR-TP,SE

bahagian bahagian: 140186

Bilangan Saluran: 1, Voltan - Pengasingan: 3750Vrms, Nisbah Pindahan Semasa (Min): 100% @ 5mA, Nisbah Pindahan Semasa (Maks): 300% @ 5mA, Masa Hidupkan / Matikan (Jenis): 3µs, 3µs, Masa Naik / Kejatuhan (Jenis): 2µs, 3µs,

Senarai harapan
TLP385(D4Y-TPL,E
Toshiba Semiconductor and Storage

TLP385(D4Y-TPL,E

bahagian bahagian: 5299

Bilangan Saluran: 1, Voltan - Pengasingan: 5000Vrms, Nisbah Pindahan Semasa (Min): 50% @ 5mA, Nisbah Pindahan Semasa (Maks): 150% @ 5mA, Masa Hidupkan / Matikan (Jenis): 3µs, 3µs, Masa Naik / Kejatuhan (Jenis): 2µs, 3µs,

Senarai harapan
TLP281-4(TP,J,F)
Toshiba Semiconductor and Storage

TLP281-4(TP,J,F)

bahagian bahagian: 114713

Bilangan Saluran: 4, Voltan - Pengasingan: 2500Vrms, Nisbah Pindahan Semasa (Min): 50% @ 5mA, Nisbah Pindahan Semasa (Maks): 600% @ 5mA, Masa Hidupkan / Matikan (Jenis): 3µs, 3µs, Masa Naik / Kejatuhan (Jenis): 2µs, 3µs,

Senarai harapan
TLP184(V4-TPR,SE
Toshiba Semiconductor and Storage

TLP184(V4-TPR,SE

bahagian bahagian: 5319

Bilangan Saluran: 1, Voltan - Pengasingan: 3750Vrms, Nisbah Pindahan Semasa (Min): 50% @ 5mA, Nisbah Pindahan Semasa (Maks): 600% @ 5mA, Masa Hidupkan / Matikan (Jenis): 3µs, 3µs, Masa Naik / Kejatuhan (Jenis): 2µs, 3µs,

Senarai harapan
TLP185(TPR,E)
Toshiba Semiconductor and Storage

TLP185(TPR,E)

bahagian bahagian: 5457

Bilangan Saluran: 1, Voltan - Pengasingan: 3750Vrms, Nisbah Pindahan Semasa (Min): 50% @ 5mA, Nisbah Pindahan Semasa (Maks): 400% @ 5mA, Masa Hidupkan / Matikan (Jenis): 9µs, 9µs, Masa Naik / Kejatuhan (Jenis): 5µs, 9µs,

Senarai harapan
TLP385(D4BL-TL,E
Toshiba Semiconductor and Storage

TLP385(D4BL-TL,E

bahagian bahagian: 5427

Bilangan Saluran: 1, Voltan - Pengasingan: 5000Vrms, Nisbah Pindahan Semasa (Min): 200% @ 5mA, Nisbah Pindahan Semasa (Maks): 600% @ 5mA, Masa Hidupkan / Matikan (Jenis): 3µs, 3µs, Masa Naik / Kejatuhan (Jenis): 2µs, 3µs,

Senarai harapan
TLP385(D4GR-TR,E
Toshiba Semiconductor and Storage

TLP385(D4GR-TR,E

bahagian bahagian: 5284

Bilangan Saluran: 1, Voltan - Pengasingan: 5000Vrms, Nisbah Pindahan Semasa (Min): 100% @ 5mA, Nisbah Pindahan Semasa (Maks): 300% @ 5mA, Masa Hidupkan / Matikan (Jenis): 3µs, 3µs, Masa Naik / Kejatuhan (Jenis): 2µs, 3µs,

Senarai harapan
TLP184(V4GBTR,SE
Toshiba Semiconductor and Storage

TLP184(V4GBTR,SE

bahagian bahagian: 5358

Bilangan Saluran: 1, Voltan - Pengasingan: 3750Vrms, Nisbah Pindahan Semasa (Min): 100% @ 5mA, Nisbah Pindahan Semasa (Maks): 600% @ 5mA, Masa Hidupkan / Matikan (Jenis): 3µs, 3µs, Masa Naik / Kejatuhan (Jenis): 2µs, 3µs,

Senarai harapan
TLP559(IGM,F)
Toshiba Semiconductor and Storage

TLP559(IGM,F)

bahagian bahagian: 27925

Bilangan Saluran: 1, Voltan - Pengasingan: 2500Vrms, Nisbah Pindahan Semasa (Min): 25% @ 10mA, Nisbah Pindahan Semasa (Maks): 75% @ 10mA, Masa Hidupkan / Matikan (Jenis): 450ns, 450ns,

Senarai harapan
TLP385(GB-TPR,E
Toshiba Semiconductor and Storage

TLP385(GB-TPR,E

bahagian bahagian: 5336

Bilangan Saluran: 1, Voltan - Pengasingan: 5000Vrms, Nisbah Pindahan Semasa (Min): 100% @ 5mA, Nisbah Pindahan Semasa (Maks): 600% @ 5mA, Masa Hidupkan / Matikan (Jenis): 3µs, 3µs, Masa Naik / Kejatuhan (Jenis): 2µs, 3µs,

Senarai harapan
TLP293(GB,E
Toshiba Semiconductor and Storage

TLP293(GB,E

bahagian bahagian: 109757

Bilangan Saluran: 1, Voltan - Pengasingan: 3750Vrms, Nisbah Pindahan Semasa (Min): 100% @ 5mA, Nisbah Pindahan Semasa (Maks): 600% @ 5mA, Masa Hidupkan / Matikan (Jenis): 3µs, 3µs, Masa Naik / Kejatuhan (Jenis): 2µs, 3µs,

Senarai harapan
TLP293(YH-TPL,E
Toshiba Semiconductor and Storage

TLP293(YH-TPL,E

bahagian bahagian: 144679

Bilangan Saluran: 1, Voltan - Pengasingan: 3750Vrms, Nisbah Pindahan Semasa (Min): 75% @ 500µA, Nisbah Pindahan Semasa (Maks): 150% @ 500µA, Masa Hidupkan / Matikan (Jenis): 3µs, 3µs, Masa Naik / Kejatuhan (Jenis): 2µs, 3µs,

Senarai harapan
TLP291(V4GRTP,SE
Toshiba Semiconductor and Storage

TLP291(V4GRTP,SE

bahagian bahagian: 5473

Bilangan Saluran: 1, Voltan - Pengasingan: 3750Vrms, Nisbah Pindahan Semasa (Min): 100% @ 5mA, Nisbah Pindahan Semasa (Maks): 300% @ 5mA, Masa Hidupkan / Matikan (Jenis): 3µs, 3µs, Masa Naik / Kejatuhan (Jenis): 2µs, 3µs,

Senarai harapan
TLP371F
Toshiba Semiconductor and Storage

TLP371F

bahagian bahagian: 67278

Bilangan Saluran: 1, Voltan - Pengasingan: 5000Vrms, Nisbah Pindahan Semasa (Min): 1000% @ 1mA, Masa Hidupkan / Matikan (Jenis): 50µs, 15µs, Masa Naik / Kejatuhan (Jenis): 40µs, 15µs,

Senarai harapan
TLP385(BLL-TPR,E
Toshiba Semiconductor and Storage

TLP385(BLL-TPR,E

bahagian bahagian: 5292

Bilangan Saluran: 1, Voltan - Pengasingan: 5000Vrms, Nisbah Pindahan Semasa (Min): 200% @ 5mA, Nisbah Pindahan Semasa (Maks): 400% @ 5mA, Masa Hidupkan / Matikan (Jenis): 3µs, 3µs, Masa Naik / Kejatuhan (Jenis): 2µs, 3µs,

Senarai harapan
TLP292(BL-TPL,E
Toshiba Semiconductor and Storage

TLP292(BL-TPL,E

bahagian bahagian: 148209

Bilangan Saluran: 1, Voltan - Pengasingan: 3750Vrms, Nisbah Pindahan Semasa (Min): 200% @ 5mA, Nisbah Pindahan Semasa (Maks): 600% @ 5mA, Masa Hidupkan / Matikan (Jenis): 3µs, 3µs, Masa Naik / Kejatuhan (Jenis): 2µs, 3µs,

Senarai harapan
TLP184(GB-TPR,SE
Toshiba Semiconductor and Storage

TLP184(GB-TPR,SE

bahagian bahagian: 183110

Bilangan Saluran: 1, Voltan - Pengasingan: 3750Vrms, Nisbah Pindahan Semasa (Min): 100% @ 5mA, Nisbah Pindahan Semasa (Maks): 600% @ 5mA, Masa Hidupkan / Matikan (Jenis): 3µs, 3µs, Masa Naik / Kejatuhan (Jenis): 2µs, 3µs,

Senarai harapan
TLP385(BL-TPL,E
Toshiba Semiconductor and Storage

TLP385(BL-TPL,E

bahagian bahagian: 5245

Bilangan Saluran: 1, Voltan - Pengasingan: 5000Vrms, Nisbah Pindahan Semasa (Min): 200% @ 5mA, Nisbah Pindahan Semasa (Maks): 600% @ 5mA, Masa Hidupkan / Matikan (Jenis): 3µs, 3µs, Masa Naik / Kejatuhan (Jenis): 2µs, 3µs,

Senarai harapan
TLP3924(TP15,F)
Toshiba Semiconductor and Storage

TLP3924(TP15,F)

bahagian bahagian: 38014

Bilangan Saluran: 1, Voltan - Pengasingan: 1500Vrms,

Senarai harapan
TLP385(GRH-TPL,E
Toshiba Semiconductor and Storage

TLP385(GRH-TPL,E

bahagian bahagian: 5238

Bilangan Saluran: 1, Voltan - Pengasingan: 5000Vrms, Nisbah Pindahan Semasa (Min): 150% @ 5mA, Nisbah Pindahan Semasa (Maks): 300% @ 5mA, Masa Hidupkan / Matikan (Jenis): 3µs, 3µs, Masa Naik / Kejatuhan (Jenis): 2µs, 3µs,

Senarai harapan
TLP785(TP6,F)
Toshiba Semiconductor and Storage

TLP785(TP6,F)

bahagian bahagian: 148552

Bilangan Saluran: 1, Voltan - Pengasingan: 5000Vrms, Nisbah Pindahan Semasa (Min): 50% @ 5mA, Nisbah Pindahan Semasa (Maks): 600% @ 5mA, Masa Hidupkan / Matikan (Jenis): 3µs, 3µs, Masa Naik / Kejatuhan (Jenis): 2µs, 3µs,

Senarai harapan