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Optoisolator - Transistor, Output Fotovoltaik

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TLP385(D4GL-TL,E
Toshiba Semiconductor and Storage

TLP385(D4GL-TL,E

bahagian bahagian: 5683

Bilangan Saluran: 1, Voltan - Pengasingan: 5000Vrms, Nisbah Pindahan Semasa (Min): 50% @ 5mA, Nisbah Pindahan Semasa (Maks): 600% @ 5mA, Masa Hidupkan / Matikan (Jenis): 3µs, 3µs, Masa Naik / Kejatuhan (Jenis): 2µs, 3µs,

Senarai harapan
TLP785F(GR,F
Toshiba Semiconductor and Storage

TLP785F(GR,F

bahagian bahagian: 5591

Bilangan Saluran: 1, Voltan - Pengasingan: 5000Vrms, Nisbah Pindahan Semasa (Min): 100% @ 5mA, Nisbah Pindahan Semasa (Maks): 300% @ 5mA, Masa Hidupkan / Matikan (Jenis): 3µs, 3µs, Masa Naik / Kejatuhan (Jenis): 2µs, 3µs,

Senarai harapan
TLP130(GB-TPR,F)
Toshiba Semiconductor and Storage

TLP130(GB-TPR,F)

bahagian bahagian: 5624

Bilangan Saluran: 1, Voltan - Pengasingan: 3750Vrms, Nisbah Pindahan Semasa (Min): 100% @ 5mA, Nisbah Pindahan Semasa (Maks): 600% @ 5mA, Masa Hidupkan / Matikan (Jenis): 3µs, 3µs, Masa Naik / Kejatuhan (Jenis): 2µs, 3µs,

Senarai harapan
TLP185(BLL-TPR,E)
Toshiba Semiconductor and Storage

TLP185(BLL-TPR,E)

bahagian bahagian: 5658

Bilangan Saluran: 1, Voltan - Pengasingan: 3750Vrms, Nisbah Pindahan Semasa (Min): 200% @ 5mA, Nisbah Pindahan Semasa (Maks): 600% @ 5mA, Masa Hidupkan / Matikan (Jenis): 9µs, 9µs, Masa Naik / Kejatuhan (Jenis): 5µs, 9µs,

Senarai harapan
TLP385(D4-GRL,E
Toshiba Semiconductor and Storage

TLP385(D4-GRL,E

bahagian bahagian: 5570

Bilangan Saluran: 1, Voltan - Pengasingan: 5000Vrms, Nisbah Pindahan Semasa (Min): 100% @ 5mA, Nisbah Pindahan Semasa (Maks): 300% @ 5mA, Masa Hidupkan / Matikan (Jenis): 3µs, 3µs, Masa Naik / Kejatuhan (Jenis): 2µs, 3µs,

Senarai harapan
TLP387(D4-TPR,E
Toshiba Semiconductor and Storage

TLP387(D4-TPR,E

bahagian bahagian: 5628

Bilangan Saluran: 1, Voltan - Pengasingan: 5000Vrms, Nisbah Pindahan Semasa (Min): 1000% @ 1mA, Masa Hidupkan / Matikan (Jenis): 50µs, 15µs, Masa Naik / Kejatuhan (Jenis): 40µs, 15µs,

Senarai harapan
TLP385(TPL,E
Toshiba Semiconductor and Storage

TLP385(TPL,E

bahagian bahagian: 5691

Bilangan Saluran: 1, Voltan - Pengasingan: 5000Vrms, Nisbah Pindahan Semasa (Min): 50% @ 5mA, Nisbah Pindahan Semasa (Maks): 600% @ 5mA, Masa Hidupkan / Matikan (Jenis): 3µs, 3µs, Masa Naik / Kejatuhan (Jenis): 2µs, 3µs,

Senarai harapan
TLP385(D4GH-TL,E
Toshiba Semiconductor and Storage

TLP385(D4GH-TL,E

bahagian bahagian: 5680

Bilangan Saluran: 1, Voltan - Pengasingan: 5000Vrms, Nisbah Pindahan Semasa (Min): 50% @ 5mA, Nisbah Pindahan Semasa (Maks): 600% @ 5mA, Masa Hidupkan / Matikan (Jenis): 3µs, 3µs, Masa Naik / Kejatuhan (Jenis): 2µs, 3µs,

Senarai harapan
TLP293(TPL,E
Toshiba Semiconductor and Storage

TLP293(TPL,E

bahagian bahagian: 179367

Bilangan Saluran: 1, Voltan - Pengasingan: 3750Vrms, Nisbah Pindahan Semasa (Min): 50% @ 5mA, Nisbah Pindahan Semasa (Maks): 600% @ 5mA, Masa Hidupkan / Matikan (Jenis): 3µs, 3µs, Masa Naik / Kejatuhan (Jenis): 2µs, 3µs,

Senarai harapan
TLP191B(U,C,F)
Toshiba Semiconductor and Storage

TLP191B(U,C,F)

bahagian bahagian: 20097

Bilangan Saluran: 1, Voltan - Pengasingan: 2500Vrms, Masa Hidupkan / Matikan (Jenis): 200µs, 3ms,

Senarai harapan
TLP185(SE
Toshiba Semiconductor and Storage

TLP185(SE

bahagian bahagian: 5552

Bilangan Saluran: 1, Voltan - Pengasingan: 3750Vrms, Nisbah Pindahan Semasa (Min): 50% @ 5mA, Nisbah Pindahan Semasa (Maks): 600% @ 5mA, Masa Hidupkan / Matikan (Jenis): 3µs, 3µs, Masa Naik / Kejatuhan (Jenis): 2µs, 3µs,

Senarai harapan
TLP280-4(GB-TP,J,F
Toshiba Semiconductor and Storage

TLP280-4(GB-TP,J,F

bahagian bahagian: 5567

Bilangan Saluran: 4, Voltan - Pengasingan: 2500Vrms, Nisbah Pindahan Semasa (Min): 100% @ 5mA, Nisbah Pindahan Semasa (Maks): 600% @ 5mA, Masa Hidupkan / Matikan (Jenis): 3µs, 3µs, Masa Naik / Kejatuhan (Jenis): 2µs, 3µs,

Senarai harapan
TLP627(F)
Toshiba Semiconductor and Storage

TLP627(F)

bahagian bahagian: 5560

Bilangan Saluran: 1, Voltan - Pengasingan: 5000Vrms, Nisbah Pindahan Semasa (Min): 1000% @ 1mA, Masa Hidupkan / Matikan (Jenis): 50µs, 15µs, Masa Naik / Kejatuhan (Jenis): 40µs, 15µs,

Senarai harapan
TLP785(GB-LF6,F
Toshiba Semiconductor and Storage

TLP785(GB-LF6,F

bahagian bahagian: 5550

Bilangan Saluran: 1, Voltan - Pengasingan: 5000Vrms, Nisbah Pindahan Semasa (Min): 100% @ 5mA, Nisbah Pindahan Semasa (Maks): 600% @ 5mA, Masa Hidupkan / Matikan (Jenis): 3µs, 3µs, Masa Naik / Kejatuhan (Jenis): 2µs, 3µs,

Senarai harapan
TLP620-2(F)
Toshiba Semiconductor and Storage

TLP620-2(F)

bahagian bahagian: 5512

Bilangan Saluran: 2, Voltan - Pengasingan: 5000Vrms, Nisbah Pindahan Semasa (Min): 50% @ 5mA, Nisbah Pindahan Semasa (Maks): 600% @ 5mA, Masa Hidupkan / Matikan (Jenis): 3µs, 3µs, Masa Naik / Kejatuhan (Jenis): 2µs, 3µs,

Senarai harapan
TLP385(BL,E
Toshiba Semiconductor and Storage

TLP385(BL,E

bahagian bahagian: 5675

Bilangan Saluran: 1, Voltan - Pengasingan: 5000Vrms, Nisbah Pindahan Semasa (Min): 200% @ 5mA, Nisbah Pindahan Semasa (Maks): 600% @ 5mA, Masa Hidupkan / Matikan (Jenis): 3µs, 3µs, Masa Naik / Kejatuhan (Jenis): 2µs, 3µs,

Senarai harapan
TLP3906(TPL,E
Toshiba Semiconductor and Storage

TLP3906(TPL,E

bahagian bahagian: 116469

Bilangan Saluran: 1, Voltan - Pengasingan: 3750Vrms, Masa Hidupkan / Matikan (Jenis): 200µs, 300µs,

Senarai harapan
TLP293(Y-TPL,E
Toshiba Semiconductor and Storage

TLP293(Y-TPL,E

bahagian bahagian: 102417

Bilangan Saluran: 1, Voltan - Pengasingan: 3750Vrms, Nisbah Pindahan Semasa (Min): 50% @ 5mA, Nisbah Pindahan Semasa (Maks): 150% @ 5mA, Masa Hidupkan / Matikan (Jenis): 3µs, 3µs, Masa Naik / Kejatuhan (Jenis): 2µs, 3µs,

Senarai harapan
TLP182(GR,E
Toshiba Semiconductor and Storage

TLP182(GR,E

bahagian bahagian: 5726

Bilangan Saluran: 1, Voltan - Pengasingan: 3750Vrms, Nisbah Pindahan Semasa (Min): 100% @ 5mA, Nisbah Pindahan Semasa (Maks): 300% @ 5mA, Masa Hidupkan / Matikan (Jenis): 3µs, 3µs, Masa Naik / Kejatuhan (Jenis): 2µs, 3µs,

Senarai harapan
TLP785(GR-LF6,F
Toshiba Semiconductor and Storage

TLP785(GR-LF6,F

bahagian bahagian: 2557

Bilangan Saluran: 1, Voltan - Pengasingan: 5000Vrms, Nisbah Pindahan Semasa (Min): 100% @ 5mA, Nisbah Pindahan Semasa (Maks): 300% @ 5mA, Masa Hidupkan / Matikan (Jenis): 3µs, 3µs, Masa Naik / Kejatuhan (Jenis): 2µs, 3µs,

Senarai harapan
TLP290(BLL-TP,E)
Toshiba Semiconductor and Storage

TLP290(BLL-TP,E)

bahagian bahagian: 5741

Bilangan Saluran: 1, Voltan - Pengasingan: 3750Vrms, Nisbah Pindahan Semasa (Min): 200% @ 5mA, Nisbah Pindahan Semasa (Maks): 400% @ 5mA, Masa Hidupkan / Matikan (Jenis): 7µs, 7µs, Masa Naik / Kejatuhan (Jenis): 4µs, 7µs,

Senarai harapan
TLP290(Y-TP,SE
Toshiba Semiconductor and Storage

TLP290(Y-TP,SE

bahagian bahagian: 177674

Bilangan Saluran: 1, Voltan - Pengasingan: 3750Vrms, Nisbah Pindahan Semasa (Min): 50% @ 5mA, Nisbah Pindahan Semasa (Maks): 150% @ 5mA, Masa Hidupkan / Matikan (Jenis): 3µs, 3µs, Masa Naik / Kejatuhan (Jenis): 2µs, 3µs,

Senarai harapan
TLP732(D4-GR-LF2,F
Toshiba Semiconductor and Storage

TLP732(D4-GR-LF2,F

bahagian bahagian: 5661

Bilangan Saluran: 1, Voltan - Pengasingan: 4000Vrms, Nisbah Pindahan Semasa (Min): 50% @ 5mA, Nisbah Pindahan Semasa (Maks): 600% @ 5mA, Masa Hidupkan / Matikan (Jenis): 3µs, 3µs, Masa Naik / Kejatuhan (Jenis): 2µs, 3µs,

Senarai harapan
TLP293-4(LA,E
Toshiba Semiconductor and Storage

TLP293-4(LA,E

bahagian bahagian: 53506

Bilangan Saluran: 4, Voltan - Pengasingan: 3750Vrms, Nisbah Pindahan Semasa (Min): 50% @ 500µA, Nisbah Pindahan Semasa (Maks): 600% @ 500µA, Masa Hidupkan / Matikan (Jenis): 3µs, 3µs, Masa Naik / Kejatuhan (Jenis): 2µs, 3µs,

Senarai harapan
TLP759(D4,J,F)
Toshiba Semiconductor and Storage

TLP759(D4,J,F)

bahagian bahagian: 5541

Bilangan Saluran: 1, Voltan - Pengasingan: 5000Vrms, Nisbah Pindahan Semasa (Min): 20% @ 16mA, Masa Hidupkan / Matikan (Jenis): 200ns, 300ns,

Senarai harapan
TLP385(D4-YH,E
Toshiba Semiconductor and Storage

TLP385(D4-YH,E

bahagian bahagian: 5593

Bilangan Saluran: 1, Voltan - Pengasingan: 5000Vrms, Nisbah Pindahan Semasa (Min): 75% @ 5mA, Nisbah Pindahan Semasa (Maks): 150% @ 5mA, Masa Hidupkan / Matikan (Jenis): 3µs, 3µs, Masa Naik / Kejatuhan (Jenis): 2µs, 3µs,

Senarai harapan
TLP631(GR,F)
Toshiba Semiconductor and Storage

TLP631(GR,F)

bahagian bahagian: 106586

Bilangan Saluran: 1, Voltan - Pengasingan: 5000Vrms, Nisbah Pindahan Semasa (Min): 100% @ 5mA, Nisbah Pindahan Semasa (Maks): 300% @ 5mA, Masa Hidupkan / Matikan (Jenis): 3µs, 3µs, Masa Naik / Kejatuhan (Jenis): 2µs, 3µs,

Senarai harapan
TLP781(F)
Toshiba Semiconductor and Storage

TLP781(F)

bahagian bahagian: 2607

Bilangan Saluran: 1, Voltan - Pengasingan: 5000Vrms, Nisbah Pindahan Semasa (Min): 50% @ 5mA, Nisbah Pindahan Semasa (Maks): 600% @ 5mA, Masa Hidupkan / Matikan (Jenis): 3µs, 3µs, Masa Naik / Kejatuhan (Jenis): 2µs, 3µs,

Senarai harapan
TLP185(GR-TPR,SE
Toshiba Semiconductor and Storage

TLP185(GR-TPR,SE

bahagian bahagian: 5675

Bilangan Saluran: 1, Voltan - Pengasingan: 3750Vrms, Nisbah Pindahan Semasa (Min): 100% @ 5mA, Nisbah Pindahan Semasa (Maks): 300% @ 5mA, Masa Hidupkan / Matikan (Jenis): 3µs, 3µs, Masa Naik / Kejatuhan (Jenis): 2µs, 3µs,

Senarai harapan
TLP291(GRH,SE
Toshiba Semiconductor and Storage

TLP291(GRH,SE

bahagian bahagian: 5646

Bilangan Saluran: 1, Voltan - Pengasingan: 3750Vrms, Nisbah Pindahan Semasa (Min): 150% @ 5mA, Nisbah Pindahan Semasa (Maks): 300% @ 5mA, Masa Hidupkan / Matikan (Jenis): 3µs, 3µs, Masa Naik / Kejatuhan (Jenis): 2µs, 3µs,

Senarai harapan
TLP385(D4GL-TR,E
Toshiba Semiconductor and Storage

TLP385(D4GL-TR,E

bahagian bahagian: 5498

Bilangan Saluran: 1, Voltan - Pengasingan: 5000Vrms, Nisbah Pindahan Semasa (Min): 50% @ 5mA, Nisbah Pindahan Semasa (Maks): 600% @ 5mA, Masa Hidupkan / Matikan (Jenis): 3µs, 3µs, Masa Naik / Kejatuhan (Jenis): 2µs, 3µs,

Senarai harapan
TLP293-4(4LGBTRE
Toshiba Semiconductor and Storage

TLP293-4(4LGBTRE

bahagian bahagian: 160470

Bilangan Saluran: 4, Voltan - Pengasingan: 3750Vrms, Nisbah Pindahan Semasa (Min): 100% @ 500µA, Nisbah Pindahan Semasa (Maks): 600% @ 500µA, Masa Hidupkan / Matikan (Jenis): 3µs, 3µs, Masa Naik / Kejatuhan (Jenis): 2µs, 3µs,

Senarai harapan
TLP185(YH-TPL,SE
Toshiba Semiconductor and Storage

TLP185(YH-TPL,SE

bahagian bahagian: 165231

Bilangan Saluran: 1, Voltan - Pengasingan: 3750Vrms, Nisbah Pindahan Semasa (Min): 75% @ 5mA, Nisbah Pindahan Semasa (Maks): 150% @ 5mA, Masa Hidupkan / Matikan (Jenis): 3µs, 3µs, Masa Naik / Kejatuhan (Jenis): 2µs, 3µs,

Senarai harapan
TLP183(Y,E
Toshiba Semiconductor and Storage

TLP183(Y,E

bahagian bahagian: 5585

Bilangan Saluran: 1, Voltan - Pengasingan: 3750Vrms, Nisbah Pindahan Semasa (Min): 150% @ 5mA, Masa Hidupkan / Matikan (Jenis): 3µs, 3µs, Masa Naik / Kejatuhan (Jenis): 2µs, 3µs,

Senarai harapan
TLP632(F)
Toshiba Semiconductor and Storage

TLP632(F)

bahagian bahagian: 46979

Bilangan Saluran: 1, Voltan - Pengasingan: 5000Vrms, Nisbah Pindahan Semasa (Min): 50% @ 5mA, Nisbah Pindahan Semasa (Maks): 600% @ 5mA, Masa Hidupkan / Matikan (Jenis): 3µs, 3µs, Masa Naik / Kejatuhan (Jenis): 2µs, 3µs,

Senarai harapan
TLP620-4(GB,F)
Toshiba Semiconductor and Storage

TLP620-4(GB,F)

bahagian bahagian: 28469

Bilangan Saluran: 4, Voltan - Pengasingan: 5000Vrms, Nisbah Pindahan Semasa (Min): 100% @ 5mA, Nisbah Pindahan Semasa (Maks): 600% @ 5mA, Masa Hidupkan / Matikan (Jenis): 3µs, 3µs, Masa Naik / Kejatuhan (Jenis): 2µs, 3µs,

Senarai harapan