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Optoisolator - Transistor, Output Fotovoltaik

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TLP785(GRH-TP6,F)
Toshiba Semiconductor and Storage

TLP785(GRH-TP6,F)

bahagian bahagian: 115313

Bilangan Saluran: 1, Voltan - Pengasingan: 5000Vrms, Nisbah Pindahan Semasa (Min): 150% @ 5mA, Nisbah Pindahan Semasa (Maks): 300% @ 5mA, Masa Hidupkan / Matikan (Jenis): 3µs, 3µs, Masa Naik / Kejatuhan (Jenis): 2µs, 3µs,

Senarai harapan
TLP292-4(V4GBTPE
Toshiba Semiconductor and Storage

TLP292-4(V4GBTPE

bahagian bahagian: 151727

Bilangan Saluran: 4, Voltan - Pengasingan: 3750Vrms, Nisbah Pindahan Semasa (Min): 100% @ 5mA, Nisbah Pindahan Semasa (Maks): 600% @ 5mA, Masa Hidupkan / Matikan (Jenis): 3µs, 3µs, Masa Naik / Kejatuhan (Jenis): 2µs, 3µs,

Senarai harapan
TLP291(GR,SE
Toshiba Semiconductor and Storage

TLP291(GR,SE

bahagian bahagian: 5750

Bilangan Saluran: 1, Voltan - Pengasingan: 3750Vrms, Nisbah Pindahan Semasa (Min): 150% @ 5mA, Nisbah Pindahan Semasa (Maks): 300% @ 5mA, Masa Hidupkan / Matikan (Jenis): 3µs, 3µs, Masa Naik / Kejatuhan (Jenis): 2µs, 3µs,

Senarai harapan
TLP293(BLL,E
Toshiba Semiconductor and Storage

TLP293(BLL,E

bahagian bahagian: 163619

Bilangan Saluran: 1, Voltan - Pengasingan: 3750Vrms, Nisbah Pindahan Semasa (Min): 200% @ 5mA, Nisbah Pindahan Semasa (Maks): 400% @ 5mA, Masa Hidupkan / Matikan (Jenis): 3µs, 3µs, Masa Naik / Kejatuhan (Jenis): 2µs, 3µs,

Senarai harapan
TLP281(GB-TP,F)
Toshiba Semiconductor and Storage

TLP281(GB-TP,F)

bahagian bahagian: 5791

Bilangan Saluran: 1, Voltan - Pengasingan: 2500Vrms, Nisbah Pindahan Semasa (Min): 100% @ 5mA, Nisbah Pindahan Semasa (Maks): 600% @ 5mA, Masa Hidupkan / Matikan (Jenis): 3µs, 3µs, Masa Naik / Kejatuhan (Jenis): 2µs, 3µs,

Senarai harapan
TLP385(D4GB-TR,E
Toshiba Semiconductor and Storage

TLP385(D4GB-TR,E

bahagian bahagian: 5917

Bilangan Saluran: 1, Voltan - Pengasingan: 5000Vrms, Nisbah Pindahan Semasa (Min): 100% @ 5mA, Nisbah Pindahan Semasa (Maks): 600% @ 5mA, Masa Hidupkan / Matikan (Jenis): 3µs, 3µs, Masa Naik / Kejatuhan (Jenis): 2µs, 3µs,

Senarai harapan
TLP383(D4GB-TL,E
Toshiba Semiconductor and Storage

TLP383(D4GB-TL,E

bahagian bahagian: 5886

Bilangan Saluran: 1, Voltan - Pengasingan: 5000Vrms, Nisbah Pindahan Semasa (Min): 100% @ 5mA, Nisbah Pindahan Semasa (Maks): 600% @ 5mA, Masa Hidupkan / Matikan (Jenis): 3µs, 3µs, Masa Naik / Kejatuhan (Jenis): 2µs, 3µs,

Senarai harapan
TLP3906(TPR,E
Toshiba Semiconductor and Storage

TLP3906(TPR,E

bahagian bahagian: 116411

Bilangan Saluran: 1, Voltan - Pengasingan: 3750Vrms, Masa Hidupkan / Matikan (Jenis): 200µs, 300µs,

Senarai harapan
TLP291(GRL-TP,SE
Toshiba Semiconductor and Storage

TLP291(GRL-TP,SE

bahagian bahagian: 146803

Bilangan Saluran: 1, Voltan - Pengasingan: 3750Vrms, Nisbah Pindahan Semasa (Min): 100% @ 5mA, Nisbah Pindahan Semasa (Maks): 200% @ 5mA, Masa Hidupkan / Matikan (Jenis): 3µs, 3µs, Masa Naik / Kejatuhan (Jenis): 2µs, 3µs,

Senarai harapan
TLP3905(TPL,E
Toshiba Semiconductor and Storage

TLP3905(TPL,E

bahagian bahagian: 5960

Bilangan Saluran: 1, Voltan - Pengasingan: 3750Vrms, Masa Hidupkan / Matikan (Jenis): 300µs, 1ms,

Senarai harapan
TLP385(D4-BL,E
Toshiba Semiconductor and Storage

TLP385(D4-BL,E

bahagian bahagian: 5870

Bilangan Saluran: 1, Voltan - Pengasingan: 5000Vrms, Nisbah Pindahan Semasa (Min): 200% @ 5mA, Nisbah Pindahan Semasa (Maks): 600% @ 5mA, Masa Hidupkan / Matikan (Jenis): 3µs, 3µs, Masa Naik / Kejatuhan (Jenis): 2µs, 3µs,

Senarai harapan
TLP2301(E
Toshiba Semiconductor and Storage

TLP2301(E

bahagian bahagian: 5921

Bilangan Saluran: 1, Voltan - Pengasingan: 3750Vrms, Nisbah Pindahan Semasa (Min): 50% @ 1mA, Nisbah Pindahan Semasa (Maks): 600% @ 1mA,

Senarai harapan
TLP388(TPR,E
Toshiba Semiconductor and Storage

TLP388(TPR,E

bahagian bahagian: 2623

Bilangan Saluran: 1, Voltan - Pengasingan: 5000Vrms, Nisbah Pindahan Semasa (Min): 50% @ 5mA, Nisbah Pindahan Semasa (Maks): 600% @ 5mA, Masa Hidupkan / Matikan (Jenis): 3µs, 3µs, Masa Naik / Kejatuhan (Jenis): 2µs, 3µs,

Senarai harapan
TLP385(E
Toshiba Semiconductor and Storage

TLP385(E

bahagian bahagian: 5818

Bilangan Saluran: 1, Voltan - Pengasingan: 5000Vrms, Nisbah Pindahan Semasa (Min): 50% @ 5mA, Nisbah Pindahan Semasa (Maks): 600% @ 5mA, Masa Hidupkan / Matikan (Jenis): 3µs, 3µs, Masa Naik / Kejatuhan (Jenis): 2µs, 3µs,

Senarai harapan
TLP385(GRL-TPL,E
Toshiba Semiconductor and Storage

TLP385(GRL-TPL,E

bahagian bahagian: 5891

Bilangan Saluran: 1, Voltan - Pengasingan: 5000Vrms, Nisbah Pindahan Semasa (Min): 100% @ 5mA, Nisbah Pindahan Semasa (Maks): 200% @ 5mA, Masa Hidupkan / Matikan (Jenis): 3µs, 3µs, Masa Naik / Kejatuhan (Jenis): 2µs, 3µs,

Senarai harapan
TLP291(TP,E)
Toshiba Semiconductor and Storage

TLP291(TP,E)

bahagian bahagian: 5794

Bilangan Saluran: 1, Voltan - Pengasingan: 3750Vrms, Nisbah Pindahan Semasa (Min): 50% @ 5mA, Nisbah Pindahan Semasa (Maks): 400% @ 5mA, Masa Hidupkan / Matikan (Jenis): 7µs, 7µs, Masa Naik / Kejatuhan (Jenis): 4µs, 7µs,

Senarai harapan
TLP385(Y,E
Toshiba Semiconductor and Storage

TLP385(Y,E

bahagian bahagian: 5891

Bilangan Saluran: 1, Voltan - Pengasingan: 5000Vrms, Nisbah Pindahan Semasa (Min): 50% @ 5mA, Nisbah Pindahan Semasa (Maks): 150% @ 5mA, Masa Hidupkan / Matikan (Jenis): 3µs, 3µs, Masa Naik / Kejatuhan (Jenis): 2µs, 3µs,

Senarai harapan
TLP385(D4-GB,E
Toshiba Semiconductor and Storage

TLP385(D4-GB,E

bahagian bahagian: 5850

Bilangan Saluran: 1, Voltan - Pengasingan: 5000Vrms, Nisbah Pindahan Semasa (Min): 100% @ 5mA, Nisbah Pindahan Semasa (Maks): 600% @ 5mA, Masa Hidupkan / Matikan (Jenis): 3µs, 3µs, Masa Naik / Kejatuhan (Jenis): 2µs, 3µs,

Senarai harapan
TLP183(GRL,E
Toshiba Semiconductor and Storage

TLP183(GRL,E

bahagian bahagian: 5736

Bilangan Saluran: 1, Voltan - Pengasingan: 3750Vrms, Nisbah Pindahan Semasa (Min): 100% @ 5mA, Nisbah Pindahan Semasa (Maks): 200% @ 5mA, Masa Hidupkan / Matikan (Jenis): 3µs, 3µs, Masa Naik / Kejatuhan (Jenis): 2µs, 3µs,

Senarai harapan
TLP2703(TP,E
Toshiba Semiconductor and Storage

TLP2703(TP,E

bahagian bahagian: 132157

Bilangan Saluran: 1, Voltan - Pengasingan: 5000Vrms, Nisbah Pindahan Semasa (Min): 900% @ 500µA, Nisbah Pindahan Semasa (Maks): 8000% @ 500µA, Masa Hidupkan / Matikan (Jenis): 330ns, 2.5µs,

Senarai harapan
TLP385(D4GR-TL,E
Toshiba Semiconductor and Storage

TLP385(D4GR-TL,E

bahagian bahagian: 5915

Bilangan Saluran: 1, Voltan - Pengasingan: 5000Vrms, Nisbah Pindahan Semasa (Min): 100% @ 5mA, Nisbah Pindahan Semasa (Maks): 300% @ 5mA, Masa Hidupkan / Matikan (Jenis): 3µs, 3µs, Masa Naik / Kejatuhan (Jenis): 2µs, 3µs,

Senarai harapan
TLP785(D4GL-T6,F
Toshiba Semiconductor and Storage

TLP785(D4GL-T6,F

bahagian bahagian: 5858

Bilangan Saluran: 1, Voltan - Pengasingan: 5000Vrms, Nisbah Pindahan Semasa (Min): 50% @ 5mA, Nisbah Pindahan Semasa (Maks): 600% @ 5mA, Masa Hidupkan / Matikan (Jenis): 3µs, 3µs, Masa Naik / Kejatuhan (Jenis): 2µs, 3µs,

Senarai harapan
TLP385(D4-TPL,E
Toshiba Semiconductor and Storage

TLP385(D4-TPL,E

bahagian bahagian: 2617

Bilangan Saluran: 1, Voltan - Pengasingan: 5000Vrms, Nisbah Pindahan Semasa (Min): 50% @ 5mA, Nisbah Pindahan Semasa (Maks): 600% @ 5mA, Masa Hidupkan / Matikan (Jenis): 3µs, 3µs, Masa Naik / Kejatuhan (Jenis): 2µs, 3µs,

Senarai harapan
TLP2703(E
Toshiba Semiconductor and Storage

TLP2703(E

bahagian bahagian: 82240

Bilangan Saluran: 1, Voltan - Pengasingan: 5000Vrms, Nisbah Pindahan Semasa (Min): 900% @ 500µA, Nisbah Pindahan Semasa (Maks): 8000% @ 500µA, Masa Hidupkan / Matikan (Jenis): 330ns, 2.5µs,

Senarai harapan
TLP388(D4GB-TR,E
Toshiba Semiconductor and Storage

TLP388(D4GB-TR,E

bahagian bahagian: 2603

Bilangan Saluran: 1, Voltan - Pengasingan: 5000Vrms, Nisbah Pindahan Semasa (Min): 100% @ 5mA, Nisbah Pindahan Semasa (Maks): 600% @ 5mA, Masa Hidupkan / Matikan (Jenis): 3µs, 3µs, Masa Naik / Kejatuhan (Jenis): 2µs, 3µs,

Senarai harapan
TLP626(TP1,F)
Toshiba Semiconductor and Storage

TLP626(TP1,F)

bahagian bahagian: 132108

Bilangan Saluran: 1, Voltan - Pengasingan: 5000Vrms, Nisbah Pindahan Semasa (Min): 100% @ 1mA, Nisbah Pindahan Semasa (Maks): 1200% @ 1mA, Masa Hidupkan / Matikan (Jenis): 10µs, 8µs, Masa Naik / Kejatuhan (Jenis): 8µs, 8µs,

Senarai harapan
TLP624-4(F)
Toshiba Semiconductor and Storage

TLP624-4(F)

bahagian bahagian: 5787

Bilangan Saluran: 4, Voltan - Pengasingan: 5000Vrms, Nisbah Pindahan Semasa (Min): 100% @ 1mA, Nisbah Pindahan Semasa (Maks): 1200% @ 1mA, Masa Hidupkan / Matikan (Jenis): 10µs, 8µs, Masa Naik / Kejatuhan (Jenis): 8µs, 8µs,

Senarai harapan
TLP781(BL,F)
Toshiba Semiconductor and Storage

TLP781(BL,F)

bahagian bahagian: 5496

Bilangan Saluran: 1, Voltan - Pengasingan: 5000Vrms, Nisbah Pindahan Semasa (Min): 200% @ 5mA, Nisbah Pindahan Semasa (Maks): 600% @ 5mA, Masa Hidupkan / Matikan (Jenis): 3µs, 3µs, Masa Naik / Kejatuhan (Jenis): 2µs, 3µs,

Senarai harapan
TLP759(D4-TP1,J,F)
Toshiba Semiconductor and Storage

TLP759(D4-TP1,J,F)

bahagian bahagian: 5610

Bilangan Saluran: 1, Voltan - Pengasingan: 5000Vrms, Nisbah Pindahan Semasa (Min): 20% @ 16mA, Masa Hidupkan / Matikan (Jenis): 200ns, 300ns,

Senarai harapan
TLP385(D4BLLTL,E
Toshiba Semiconductor and Storage

TLP385(D4BLLTL,E

bahagian bahagian: 5590

Bilangan Saluran: 1, Voltan - Pengasingan: 5000Vrms, Nisbah Pindahan Semasa (Min): 200% @ 5mA, Nisbah Pindahan Semasa (Maks): 400% @ 5mA, Masa Hidupkan / Matikan (Jenis): 3µs, 3µs, Masa Naik / Kejatuhan (Jenis): 2µs, 3µs,

Senarai harapan
TLP293(GRH-TPL,E
Toshiba Semiconductor and Storage

TLP293(GRH-TPL,E

bahagian bahagian: 195548

Bilangan Saluran: 1, Voltan - Pengasingan: 3750Vrms, Nisbah Pindahan Semasa (Min): 150% @ 500µA, Nisbah Pindahan Semasa (Maks): 300% @ 500µA, Masa Hidupkan / Matikan (Jenis): 3µs, 3µs, Masa Naik / Kejatuhan (Jenis): 2µs, 3µs,

Senarai harapan
TLP781(GB,F)
Toshiba Semiconductor and Storage

TLP781(GB,F)

bahagian bahagian: 5676

Bilangan Saluran: 1, Voltan - Pengasingan: 5000Vrms, Nisbah Pindahan Semasa (Min): 100% @ 5mA, Nisbah Pindahan Semasa (Maks): 600% @ 5mA, Masa Hidupkan / Matikan (Jenis): 3µs, 3µs, Masa Naik / Kejatuhan (Jenis): 2µs, 3µs,

Senarai harapan
TLP290(GB-TP,E)
Toshiba Semiconductor and Storage

TLP290(GB-TP,E)

bahagian bahagian: 5572

Bilangan Saluran: 1, Voltan - Pengasingan: 3750Vrms, Nisbah Pindahan Semasa (Min): 100% @ 5mA, Nisbah Pindahan Semasa (Maks): 400% @ 5mA, Masa Hidupkan / Matikan (Jenis): 7µs, 7µs, Masa Naik / Kejatuhan (Jenis): 4µs, 7µs,

Senarai harapan
TLP590B(C,F)
Toshiba Semiconductor and Storage

TLP590B(C,F)

bahagian bahagian: 33240

Bilangan Saluran: 1, Voltan - Pengasingan: 2500Vrms, Masa Hidupkan / Matikan (Jenis): 200µs, 1ms,

Senarai harapan
TLP293-4(GBTPR,E
Toshiba Semiconductor and Storage

TLP293-4(GBTPR,E

bahagian bahagian: 160482

Bilangan Saluran: 4, Voltan - Pengasingan: 3750Vrms, Nisbah Pindahan Semasa (Min): 100% @ 5mA, Nisbah Pindahan Semasa (Maks): 600% @ 5mA, Masa Hidupkan / Matikan (Jenis): 3µs, 3µs, Masa Naik / Kejatuhan (Jenis): 2µs, 3µs,

Senarai harapan
TLP3905(E
Toshiba Semiconductor and Storage

TLP3905(E

bahagian bahagian: 5636

Bilangan Saluran: 1, Voltan - Pengasingan: 3750Vrms, Masa Hidupkan / Matikan (Jenis): 300µs, 1ms,

Senarai harapan