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Optoisolator - Transistor, Output Fotovoltaik

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TLP292-4(LA,E
Toshiba Semiconductor and Storage

TLP292-4(LA,E

bahagian bahagian: 50525

Bilangan Saluran: 4, Voltan - Pengasingan: 3750Vrms, Nisbah Pindahan Semasa (Min): 50% @ 500µA, Nisbah Pindahan Semasa (Maks): 600% @ 500µA, Masa Hidupkan / Matikan (Jenis): 3µs, 3µs, Masa Naik / Kejatuhan (Jenis): 2µs, 3µs,

Senarai harapan
TLP292-4(LGB,E
Toshiba Semiconductor and Storage

TLP292-4(LGB,E

bahagian bahagian: 50524

Bilangan Saluran: 4, Voltan - Pengasingan: 3750Vrms, Nisbah Pindahan Semasa (Min): 100% @ 500µA, Nisbah Pindahan Semasa (Maks): 600% @ 500µA, Masa Hidupkan / Matikan (Jenis): 3µs, 3µs, Masa Naik / Kejatuhan (Jenis): 2µs, 3µs,

Senarai harapan
TLP292-4(V4LATRE
Toshiba Semiconductor and Storage

TLP292-4(V4LATRE

bahagian bahagian: 151683

Bilangan Saluran: 4, Voltan - Pengasingan: 3750Vrms, Nisbah Pindahan Semasa (Min): 50% @ 500µA, Nisbah Pindahan Semasa (Maks): 600% @ 500µA, Masa Hidupkan / Matikan (Jenis): 3µs, 3µs, Masa Naik / Kejatuhan (Jenis): 2µs, 3µs,

Senarai harapan
TLP292-4(V4-TR,E
Toshiba Semiconductor and Storage

TLP292-4(V4-TR,E

bahagian bahagian: 151713

Bilangan Saluran: 4, Voltan - Pengasingan: 3750Vrms, Nisbah Pindahan Semasa (Min): 50% @ 5mA, Nisbah Pindahan Semasa (Maks): 600% @ 5mA, Masa Hidupkan / Matikan (Jenis): 3µs, 3µs, Masa Naik / Kejatuhan (Jenis): 2µs, 3µs,

Senarai harapan
TLP632(GB,F)
Toshiba Semiconductor and Storage

TLP632(GB,F)

bahagian bahagian: 46966

Bilangan Saluran: 1, Voltan - Pengasingan: 5000Vrms, Nisbah Pindahan Semasa (Min): 100% @ 5mA, Nisbah Pindahan Semasa (Maks): 600% @ 5mA, Masa Hidupkan / Matikan (Jenis): 3µs, 3µs, Masa Naik / Kejatuhan (Jenis): 2µs, 3µs,

Senarai harapan
TLP387(TPL,E
Toshiba Semiconductor and Storage

TLP387(TPL,E

bahagian bahagian: 9942

Bilangan Saluran: 1, Voltan - Pengasingan: 5000Vrms, Nisbah Pindahan Semasa (Min): 1000% @ 1mA, Masa Hidupkan / Matikan (Jenis): 50µs, 15µs, Masa Naik / Kejatuhan (Jenis): 40µs, 15µs,

Senarai harapan
TLP388(D4-TPL,E
Toshiba Semiconductor and Storage

TLP388(D4-TPL,E

bahagian bahagian: 9999

Bilangan Saluran: 1, Voltan - Pengasingan: 5000Vrms, Nisbah Pindahan Semasa (Min): 50% @ 5mA, Nisbah Pindahan Semasa (Maks): 600% @ 5mA, Masa Hidupkan / Matikan (Jenis): 3µs, 3µs, Masa Naik / Kejatuhan (Jenis): 2µs, 3µs,

Senarai harapan
TLP2303(TPL,E
Toshiba Semiconductor and Storage

TLP2303(TPL,E

bahagian bahagian: 179534

Bilangan Saluran: 1, Voltan - Pengasingan: 3750Vrms, Nisbah Pindahan Semasa (Min): 500% @ 5mA,

Senarai harapan
TLP292-4(V4LGB,E
Toshiba Semiconductor and Storage

TLP292-4(V4LGB,E

bahagian bahagian: 50568

Bilangan Saluran: 4, Voltan - Pengasingan: 3750Vrms, Nisbah Pindahan Semasa (Min): 100% @ 500µA, Nisbah Pindahan Semasa (Maks): 600% @ 500µA, Masa Hidupkan / Matikan (Jenis): 3µs, 3µs, Masa Naik / Kejatuhan (Jenis): 2µs, 3µs,

Senarai harapan
TLP290(GB,SE
Toshiba Semiconductor and Storage

TLP290(GB,SE

bahagian bahagian: 159226

Bilangan Saluran: 1, Voltan - Pengasingan: 3750Vrms, Nisbah Pindahan Semasa (Min): 100% @ 5mA, Nisbah Pindahan Semasa (Maks): 400% @ 5mA, Masa Hidupkan / Matikan (Jenis): 7µs, 7µs, Masa Naik / Kejatuhan (Jenis): 4µs, 7µs,

Senarai harapan
TLP631(F)
Toshiba Semiconductor and Storage

TLP631(F)

bahagian bahagian: 2606

Bilangan Saluran: 1, Voltan - Pengasingan: 5000Vrms, Nisbah Pindahan Semasa (Min): 50% @ 5mA, Nisbah Pindahan Semasa (Maks): 600% @ 5mA, Masa Hidupkan / Matikan (Jenis): 3µs, 3µs, Masa Naik / Kejatuhan (Jenis): 2µs, 3µs,

Senarai harapan
TLP184(BL-TPL,SE
Toshiba Semiconductor and Storage

TLP184(BL-TPL,SE

bahagian bahagian: 117114

Bilangan Saluran: 1, Voltan - Pengasingan: 3750Vrms, Nisbah Pindahan Semasa (Min): 200% @ 5mA, Nisbah Pindahan Semasa (Maks): 600% @ 5mA, Masa Hidupkan / Matikan (Jenis): 3µs, 3µs, Masa Naik / Kejatuhan (Jenis): 2µs, 3µs,

Senarai harapan
TLP293-4(LA-TP,E
Toshiba Semiconductor and Storage

TLP293-4(LA-TP,E

bahagian bahagian: 160464

Bilangan Saluran: 4, Voltan - Pengasingan: 3750Vrms, Nisbah Pindahan Semasa (Min): 50% @ 500µA, Nisbah Pindahan Semasa (Maks): 600% @ 500µA, Masa Hidupkan / Matikan (Jenis): 3µs, 3µs, Masa Naik / Kejatuhan (Jenis): 2µs, 3µs,

Senarai harapan
TLP292-4(LGBTR,E
Toshiba Semiconductor and Storage

TLP292-4(LGBTR,E

bahagian bahagian: 151734

Bilangan Saluran: 4, Voltan - Pengasingan: 3750Vrms, Nisbah Pindahan Semasa (Min): 100% @ 500µA, Nisbah Pindahan Semasa (Maks): 600% @ 500µA, Masa Hidupkan / Matikan (Jenis): 3µs, 3µs, Masa Naik / Kejatuhan (Jenis): 2µs, 3µs,

Senarai harapan
TLP2530(F)
Toshiba Semiconductor and Storage

TLP2530(F)

bahagian bahagian: 41674

Bilangan Saluran: 2, Voltan - Pengasingan: 2500Vrms, Nisbah Pindahan Semasa (Min): 7% @ 16mA, Masa Hidupkan / Matikan (Jenis): 300ns, 500ns,

Senarai harapan
TLP388(D4GB-TL,E
Toshiba Semiconductor and Storage

TLP388(D4GB-TL,E

bahagian bahagian: 9996

Bilangan Saluran: 1, Voltan - Pengasingan: 5000Vrms, Nisbah Pindahan Semasa (Min): 100% @ 5mA, Nisbah Pindahan Semasa (Maks): 600% @ 5mA, Masa Hidupkan / Matikan (Jenis): 3µs, 3µs, Masa Naik / Kejatuhan (Jenis): 2µs, 3µs,

Senarai harapan
TLP785(GR,F)
Toshiba Semiconductor and Storage

TLP785(GR,F)

bahagian bahagian: 135682

Bilangan Saluran: 1, Voltan - Pengasingan: 5000Vrms, Nisbah Pindahan Semasa (Min): 100% @ 5mA, Nisbah Pindahan Semasa (Maks): 300% @ 5mA, Masa Hidupkan / Matikan (Jenis): 3µs, 3µs, Masa Naik / Kejatuhan (Jenis): 2µs, 3µs,

Senarai harapan
TLP292-4(V4LATPE
Toshiba Semiconductor and Storage

TLP292-4(V4LATPE

bahagian bahagian: 151689

Bilangan Saluran: 4, Voltan - Pengasingan: 3750Vrms, Nisbah Pindahan Semasa (Min): 50% @ 500µA, Nisbah Pindahan Semasa (Maks): 600% @ 500µA, Masa Hidupkan / Matikan (Jenis): 3µs, 3µs, Masa Naik / Kejatuhan (Jenis): 2µs, 3µs,

Senarai harapan
TLP293-4(V4-GB,E
Toshiba Semiconductor and Storage

TLP293-4(V4-GB,E

bahagian bahagian: 53541

Bilangan Saluran: 4, Voltan - Pengasingan: 3750Vrms, Nisbah Pindahan Semasa (Min): 100% @ 5mA, Nisbah Pindahan Semasa (Maks): 600% @ 5mA, Masa Hidupkan / Matikan (Jenis): 3µs, 3µs, Masa Naik / Kejatuhan (Jenis): 2µs, 3µs,

Senarai harapan
TLP293-4(GB,E
Toshiba Semiconductor and Storage

TLP293-4(GB,E

bahagian bahagian: 53544

Bilangan Saluran: 4, Voltan - Pengasingan: 3750Vrms, Nisbah Pindahan Semasa (Min): 100% @ 5mA, Nisbah Pindahan Semasa (Maks): 600% @ 5mA, Masa Hidupkan / Matikan (Jenis): 3µs, 3µs, Masa Naik / Kejatuhan (Jenis): 2µs, 3µs,

Senarai harapan
TLP293-4(V4-TP,E
Toshiba Semiconductor and Storage

TLP293-4(V4-TP,E

bahagian bahagian: 160451

Bilangan Saluran: 4, Voltan - Pengasingan: 3750Vrms, Nisbah Pindahan Semasa (Min): 50% @ 5mA, Nisbah Pindahan Semasa (Maks): 600% @ 5mA, Masa Hidupkan / Matikan (Jenis): 3µs, 3µs, Masa Naik / Kejatuhan (Jenis): 2µs, 3µs,

Senarai harapan
TLP184(GR-TPL,SE
Toshiba Semiconductor and Storage

TLP184(GR-TPL,SE

bahagian bahagian: 109314

Bilangan Saluran: 1, Voltan - Pengasingan: 3750Vrms, Nisbah Pindahan Semasa (Min): 100% @ 5mA, Nisbah Pindahan Semasa (Maks): 300% @ 5mA, Masa Hidupkan / Matikan (Jenis): 3µs, 3µs, Masa Naik / Kejatuhan (Jenis): 2µs, 3µs,

Senarai harapan
TLP292-4(TP,E
Toshiba Semiconductor and Storage

TLP292-4(TP,E

bahagian bahagian: 151729

Bilangan Saluran: 4, Voltan - Pengasingan: 3750Vrms, Nisbah Pindahan Semasa (Min): 50% @ 5mA, Nisbah Pindahan Semasa (Maks): 600% @ 5mA, Masa Hidupkan / Matikan (Jenis): 3µs, 3µs, Masa Naik / Kejatuhan (Jenis): 2µs, 3µs,

Senarai harapan
TLP292-4(V4GBTRE
Toshiba Semiconductor and Storage

TLP292-4(V4GBTRE

bahagian bahagian: 151698

Bilangan Saluran: 4, Voltan - Pengasingan: 3750Vrms, Nisbah Pindahan Semasa (Min): 100% @ 5mA, Nisbah Pindahan Semasa (Maks): 600% @ 5mA, Masa Hidupkan / Matikan (Jenis): 3µs, 3µs, Masa Naik / Kejatuhan (Jenis): 2µs, 3µs,

Senarai harapan
TLP292-4(TPR,E
Toshiba Semiconductor and Storage

TLP292-4(TPR,E

bahagian bahagian: 151687

Bilangan Saluran: 4, Voltan - Pengasingan: 3750Vrms, Nisbah Pindahan Semasa (Min): 50% @ 5mA, Nisbah Pindahan Semasa (Maks): 600% @ 5mA, Masa Hidupkan / Matikan (Jenis): 3µs, 3µs, Masa Naik / Kejatuhan (Jenis): 2µs, 3µs,

Senarai harapan
TLP293-4(V4-TR,E
Toshiba Semiconductor and Storage

TLP293-4(V4-TR,E

bahagian bahagian: 160497

Bilangan Saluran: 4, Voltan - Pengasingan: 3750Vrms, Nisbah Pindahan Semasa (Min): 50% @ 5mA, Nisbah Pindahan Semasa (Maks): 600% @ 5mA, Masa Hidupkan / Matikan (Jenis): 3µs, 3µs, Masa Naik / Kejatuhan (Jenis): 2µs, 3µs,

Senarai harapan
TLP292-4(4LGBTRE
Toshiba Semiconductor and Storage

TLP292-4(4LGBTRE

bahagian bahagian: 151724

Bilangan Saluran: 4, Voltan - Pengasingan: 3750Vrms, Nisbah Pindahan Semasa (Min): 100% @ 500µA, Nisbah Pindahan Semasa (Maks): 600% @ 500µA, Masa Hidupkan / Matikan (Jenis): 3µs, 3µs, Masa Naik / Kejatuhan (Jenis): 2µs, 3µs,

Senarai harapan
TLP785(F)
Toshiba Semiconductor and Storage

TLP785(F)

bahagian bahagian: 135607

Bilangan Saluran: 1, Voltan - Pengasingan: 5000Vrms, Nisbah Pindahan Semasa (Min): 50% @ 5mA, Nisbah Pindahan Semasa (Maks): 600% @ 5mA, Masa Hidupkan / Matikan (Jenis): 3µs, 3µs, Masa Naik / Kejatuhan (Jenis): 2µs, 3µs,

Senarai harapan
TLP559(F)
Toshiba Semiconductor and Storage

TLP559(F)

bahagian bahagian: 25416

Bilangan Saluran: 1, Voltan - Pengasingan: 2500Vrms, Nisbah Pindahan Semasa (Min): 20% @ 16mA, Masa Hidupkan / Matikan (Jenis): 200ns, 300ns,

Senarai harapan
TLP184(E)
Toshiba Semiconductor and Storage

TLP184(E)

bahagian bahagian: 106154

Bilangan Saluran: 1, Voltan - Pengasingan: 3750Vrms, Nisbah Pindahan Semasa (Min): 50% @ 5mA, Nisbah Pindahan Semasa (Maks): 400% @ 5mA, Masa Hidupkan / Matikan (Jenis): 9µs, 9µs, Masa Naik / Kejatuhan (Jenis): 5µs, 9µs,

Senarai harapan
TLP293-4(E
Toshiba Semiconductor and Storage

TLP293-4(E

bahagian bahagian: 53477

Bilangan Saluran: 4, Voltan - Pengasingan: 3750Vrms, Nisbah Pindahan Semasa (Min): 50% @ 5mA, Nisbah Pindahan Semasa (Maks): 600% @ 5mA, Masa Hidupkan / Matikan (Jenis): 3µs, 3µs, Masa Naik / Kejatuhan (Jenis): 2µs, 3µs,

Senarai harapan
TLP293-4(V4LATPE
Toshiba Semiconductor and Storage

TLP293-4(V4LATPE

bahagian bahagian: 160515

Bilangan Saluran: 4, Voltan - Pengasingan: 3750Vrms, Nisbah Pindahan Semasa (Min): 50% @ 500µA, Nisbah Pindahan Semasa (Maks): 600% @ 500µA, Masa Hidupkan / Matikan (Jenis): 3µs, 3µs, Masa Naik / Kejatuhan (Jenis): 2µs, 3µs,

Senarai harapan
TLP292-4(LA-TR,E
Toshiba Semiconductor and Storage

TLP292-4(LA-TR,E

bahagian bahagian: 151681

Bilangan Saluran: 4, Voltan - Pengasingan: 3750Vrms, Nisbah Pindahan Semasa (Min): 50% @ 500µA, Nisbah Pindahan Semasa (Maks): 600% @ 500µA, Masa Hidupkan / Matikan (Jenis): 3µs, 3µs, Masa Naik / Kejatuhan (Jenis): 2µs, 3µs,

Senarai harapan
TLP293(BLL-TPL,E
Toshiba Semiconductor and Storage

TLP293(BLL-TPL,E

bahagian bahagian: 173727

Bilangan Saluran: 1, Voltan - Pengasingan: 3750Vrms, Nisbah Pindahan Semasa (Min): 200% @ 500µA, Nisbah Pindahan Semasa (Maks): 400% @ 500µA, Masa Hidupkan / Matikan (Jenis): 3µs, 3µs, Masa Naik / Kejatuhan (Jenis): 2µs, 3µs,

Senarai harapan
TLP109(IGM-TPR,E
Toshiba Semiconductor and Storage

TLP109(IGM-TPR,E

bahagian bahagian: 9983

Bilangan Saluran: 1, Voltan - Pengasingan: 3750Vrms, Nisbah Pindahan Semasa (Min): 25% @ 10mA, Nisbah Pindahan Semasa (Maks): 75% @ 10mA, Masa Hidupkan / Matikan (Jenis): 450ns, 450ns,

Senarai harapan
TLP331(F)
Toshiba Semiconductor and Storage

TLP331(F)

bahagian bahagian: 46370

Bilangan Saluran: 1, Voltan - Pengasingan: 5000Vrms, Nisbah Pindahan Semasa (Min): 100% @ 1mA, Nisbah Pindahan Semasa (Maks): 1200% @ 1mA, Masa Hidupkan / Matikan (Jenis): 10µs, 8µs, Masa Naik / Kejatuhan (Jenis): 8µs, 8µs,

Senarai harapan