Transistor - FET, MOSFET - Bujang | Produk Semikonduktor Diskrit | 21

TK10E60W,S1VX

bahagian bahagian: 23805

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 9.7A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 380 mOhm @ 4.9A, 10V,

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Toshiba Semiconductor and Storage

TK33S10N1Z,LQ

bahagian bahagian: 104550

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 33A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 9.7 mOhm @ 16.5A, 10V,

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Toshiba Semiconductor and Storage

SSM3J35CTC,L3F

bahagian bahagian: 145639

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 250mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.2V, 4.5V, Rds On (Maks) @ Id, Vgs: 1.4 Ohm @ 150mA, 4.5V,

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Toshiba Semiconductor and Storage

TK11A60D(STA4,Q,M)

bahagian bahagian: 30899

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 11A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 650 mOhm @ 5.5A, 10V,

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Toshiba Semiconductor and Storage

SSM3K2615R,LF

bahagian bahagian: 135583

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 3.3V, 10V, Rds On (Maks) @ Id, Vgs: 300 mOhm @ 1A, 10V,

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Toshiba Semiconductor and Storage

TK6A60W,S4VX

bahagian bahagian: 36641

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6.2A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 750 mOhm @ 3.1A, 10V,

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Toshiba Semiconductor and Storage

SSM6J511NU,LF

bahagian bahagian: 145260

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 12V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 14A (Ta), Rds On (Maks) @ Id, Vgs: 9.1 mOhm @ 4A, 8V,

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Toshiba Semiconductor and Storage

TPWR8004PL,L1Q

bahagian bahagian: 40033

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 150A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 0.8 mOhm @ 50A, 10V,

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Toshiba Semiconductor and Storage

TK13A55DA(STA4,QM)

bahagian bahagian: 28847

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 550V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 12.5A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 480 mOhm @ 6.3A, 10V,

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Toshiba Semiconductor and Storage

TK13E25D,S1X(S

bahagian bahagian: 36030

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 250V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 13A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 250 mOhm @ 6.5A, 10V,

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Toshiba Semiconductor and Storage

TK12A55D(STA4,Q,M)

bahagian bahagian: 29048

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 550V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 12A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 570 mOhm @ 6A, 10V,

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Toshiba Semiconductor and Storage

TK8A60W,S4VX

bahagian bahagian: 31030

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 500 mOhm @ 4A, 10V,

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Toshiba Semiconductor and Storage

TK25V60X,LQ

bahagian bahagian: 8177

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 25A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 135 mOhm @ 7.5A, 10V,

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Toshiba Semiconductor and Storage

TK19A45D(STA4,Q,M)

bahagian bahagian: 22520

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 450V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 19A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 250 mOhm @ 9.5A, 10V,

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Toshiba Semiconductor and Storage

TK14A45D(STA4,Q,M)

bahagian bahagian: 27275

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 450V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 14A, Rds On (Maks) @ Id, Vgs: 340 mOhm @ 7A, 10V,

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Toshiba Semiconductor and Storage

TK20E60W,S1VX

bahagian bahagian: 16879

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 20A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 155 mOhm @ 10A, 10V,

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Toshiba Semiconductor and Storage

TK10J80E,S1E

bahagian bahagian: 26795

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 800V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 10A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 1 Ohm @ 5A, 10V,

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Toshiba Semiconductor and Storage

TK13A45D(STA4,Q,M)

bahagian bahagian: 33491

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 450V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 13A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 460 mOhm @ 6.5A, 10V,

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Toshiba Semiconductor and Storage

SSM3J356R,LF

bahagian bahagian: 178382

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4V, 10V, Rds On (Maks) @ Id, Vgs: 300 mOhm @ 1A, 10V,

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Toshiba Semiconductor and Storage

TK25E60X,S1X

bahagian bahagian: 16545

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 25A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 125 mOhm @ 7.5A, 10V,

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Toshiba Semiconductor and Storage

TK31V60X,LQ

bahagian bahagian: 28818

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 30.8A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 98 mOhm @ 9.4A, 10V,

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Toshiba Semiconductor and Storage

TK13A50D(STA4,Q,M)

bahagian bahagian: 27289

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 500V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 13A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 400 mOhm @ 6.5A, 10V,

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Toshiba Semiconductor and Storage

TK25E60X5,S1X

bahagian bahagian: 15899

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 25A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 140 mOhm @ 7.5A, 10V,

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Toshiba Semiconductor and Storage

SSM3J15FV,L3F

bahagian bahagian: 186662

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 100mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 2.5V, 4V, Rds On (Maks) @ Id, Vgs: 12 Ohm @ 10mA, 4V,

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Toshiba Semiconductor and Storage

SSM3J133TU,LF

bahagian bahagian: 139050

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.5A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.5V, 4.5V, Rds On (Maks) @ Id, Vgs: 29.8 mOhm @ 3A, 4.5V,

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Toshiba Semiconductor and Storage

TK7J90E,S1E

bahagian bahagian: 24719

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 900V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 7A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 2 Ohm @ 3.5A, 10V,

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Toshiba Semiconductor and Storage

TK18A50D(STA4,Q,M)

bahagian bahagian: 23408

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 500V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 18A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 270 mOhm @ 9A, 10V,

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Toshiba Semiconductor and Storage

TK16G60W,RVQ

bahagian bahagian: 5861

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 15.8A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 190 mOhm @ 7.9A, 10V,

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Toshiba Semiconductor and Storage

TK72E12N1,S1X

bahagian bahagian: 35805

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 120V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 72A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 4.4 mOhm @ 36A, 10V,

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Toshiba Semiconductor and Storage

TK14A45DA(STA4,QM)

bahagian bahagian: 30502

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 450V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 13.5A, Rds On (Maks) @ Id, Vgs: 410 mOhm @ 6.8A, 10V,

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Toshiba Semiconductor and Storage

TK7A65D(STA4,Q,M)

bahagian bahagian: 37304

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 650V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 7A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 980 mOhm @ 3.5A, 10V,

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Toshiba Semiconductor and Storage

TK12A80W,S4X

bahagian bahagian: 21241

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 800V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 11.5A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 450 mOhm @ 5.8A, 10V,

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Toshiba Semiconductor and Storage

TK12A45D(STA4,Q,M)

bahagian bahagian: 36978

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 450V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 12A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 520 mOhm @ 6A, 10V,

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Toshiba Semiconductor and Storage

TK12E60W,S1VX

bahagian bahagian: 26976

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 11.5A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 300 mOhm @ 5.8A, 10V,

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Toshiba Semiconductor and Storage

TK10A55D(STA4,Q,M)

bahagian bahagian: 35872

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 550V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 10A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 720 mOhm @ 5A, 10V,

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Toshiba Semiconductor and Storage

TPN3R704PL,L1Q

bahagian bahagian: 106820

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 80A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 3.7 mOhm @ 40A, 10V,

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