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Optoisolator - Transistor, Output Fotovoltaik

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TLP293(GB-TPL,E
Toshiba Semiconductor and Storage

TLP293(GB-TPL,E

bahagian bahagian: 175302

Bilangan Saluran: 1, Voltan - Pengasingan: 3750Vrms, Nisbah Pindahan Semasa (Min): 100% @ 5mA, Nisbah Pindahan Semasa (Maks): 600% @ 5mA, Masa Hidupkan / Matikan (Jenis): 3µs, 3µs, Masa Naik / Kejatuhan (Jenis): 2µs, 3µs,

Senarai harapan
TLP785(BL,F)
Toshiba Semiconductor and Storage

TLP785(BL,F)

bahagian bahagian: 135660

Bilangan Saluran: 1, Voltan - Pengasingan: 5000Vrms, Nisbah Pindahan Semasa (Min): 200% @ 5mA, Nisbah Pindahan Semasa (Maks): 600% @ 5mA, Masa Hidupkan / Matikan (Jenis): 3µs, 3µs, Masa Naik / Kejatuhan (Jenis): 2µs, 3µs,

Senarai harapan
TLP291-4(GB,E)
Toshiba Semiconductor and Storage

TLP291-4(GB,E)

bahagian bahagian: 70479

Bilangan Saluran: 4, Voltan - Pengasingan: 2500Vrms, Nisbah Pindahan Semasa (Min): 100% @ 5mA, Nisbah Pindahan Semasa (Maks): 400% @ 5mA, Masa Hidupkan / Matikan (Jenis): 3µs, 3µs, Masa Naik / Kejatuhan (Jenis): 2µs, 3µs,

Senarai harapan
TLP291(GB,SE
Toshiba Semiconductor and Storage

TLP291(GB,SE

bahagian bahagian: 155856

Bilangan Saluran: 1, Voltan - Pengasingan: 3750Vrms, Nisbah Pindahan Semasa (Min): 100% @ 5mA, Nisbah Pindahan Semasa (Maks): 600% @ 5mA, Masa Hidupkan / Matikan (Jenis): 3µs, 3µs, Masa Naik / Kejatuhan (Jenis): 2µs, 3µs,

Senarai harapan
TLP290(BL-TP,SE
Toshiba Semiconductor and Storage

TLP290(BL-TP,SE

bahagian bahagian: 119013

Bilangan Saluran: 1, Voltan - Pengasingan: 3750Vrms, Nisbah Pindahan Semasa (Min): 200% @ 5mA, Nisbah Pindahan Semasa (Maks): 600% @ 5mA, Masa Hidupkan / Matikan (Jenis): 3µs, 3µs, Masa Naik / Kejatuhan (Jenis): 2µs, 3µs,

Senarai harapan
TLP182(GB-TPL,E
Toshiba Semiconductor and Storage

TLP182(GB-TPL,E

bahagian bahagian: 121142

Bilangan Saluran: 1, Voltan - Pengasingan: 3750Vrms, Nisbah Pindahan Semasa (Min): 100% @ 5mA, Nisbah Pindahan Semasa (Maks): 600% @ 5mA, Masa Hidupkan / Matikan (Jenis): 3µs, 3µs, Masa Naik / Kejatuhan (Jenis): 2µs, 3µs,

Senarai harapan
TLP293(BL-TPL,E
Toshiba Semiconductor and Storage

TLP293(BL-TPL,E

bahagian bahagian: 173911

Bilangan Saluran: 1, Voltan - Pengasingan: 3750Vrms, Nisbah Pindahan Semasa (Min): 200% @ 5mA, Nisbah Pindahan Semasa (Maks): 600% @ 5mA, Masa Hidupkan / Matikan (Jenis): 3µs, 3µs, Masa Naik / Kejatuhan (Jenis): 2µs, 3µs,

Senarai harapan
TLP293-4(MBGBTPE
Toshiba Semiconductor and Storage

TLP293-4(MBGBTPE

bahagian bahagian: 160431

Bilangan Saluran: 4, Voltan - Pengasingan: 3750Vrms, Nisbah Pindahan Semasa (Min): 100% @ 5mA, Nisbah Pindahan Semasa (Maks): 600% @ 5mA, Masa Hidupkan / Matikan (Jenis): 3µs, 3µs, Masa Naik / Kejatuhan (Jenis): 2µs, 3µs,

Senarai harapan
TLP185(GRL-TL,SE
Toshiba Semiconductor and Storage

TLP185(GRL-TL,SE

bahagian bahagian: 161155

Bilangan Saluran: 1, Voltan - Pengasingan: 3750Vrms, Nisbah Pindahan Semasa (Min): 100% @ 5mA, Nisbah Pindahan Semasa (Maks): 200% @ 5mA, Masa Hidupkan / Matikan (Jenis): 3µs, 3µs, Masa Naik / Kejatuhan (Jenis): 2µs, 3µs,

Senarai harapan
TLP184(GB-TPL,E)
Toshiba Semiconductor and Storage

TLP184(GB-TPL,E)

bahagian bahagian: 158238

Bilangan Saluran: 1, Voltan - Pengasingan: 3750Vrms, Nisbah Pindahan Semasa (Min): 100% @ 5mA, Nisbah Pindahan Semasa (Maks): 400% @ 5mA, Masa Hidupkan / Matikan (Jenis): 9µs, 9µs, Masa Naik / Kejatuhan (Jenis): 5µs, 9µs,

Senarai harapan
TLP187(TPL,E
Toshiba Semiconductor and Storage

TLP187(TPL,E

bahagian bahagian: 152142

Bilangan Saluran: 1, Voltan - Pengasingan: 3750Vrms, Nisbah Pindahan Semasa (Min): 1000% @ 1mA, Masa Hidupkan / Matikan (Jenis): 50µs, 15µs, Masa Naik / Kejatuhan (Jenis): 40µs, 15µs,

Senarai harapan
TLP372(F)
Toshiba Semiconductor and Storage

TLP372(F)

bahagian bahagian: 70465

Bilangan Saluran: 1, Voltan - Pengasingan: 5000Vrms, Nisbah Pindahan Semasa (Min): 1000% @ 1mA, Masa Hidupkan / Matikan (Jenis): 50µs, 15µs, Masa Naik / Kejatuhan (Jenis): 40µs, 15µs,

Senarai harapan
TLP293-4(LGBTR,E
Toshiba Semiconductor and Storage

TLP293-4(LGBTR,E

bahagian bahagian: 160523

Bilangan Saluran: 4, Voltan - Pengasingan: 3750Vrms, Nisbah Pindahan Semasa (Min): 100% @ 500µA, Nisbah Pindahan Semasa (Maks): 600% @ 500µA, Masa Hidupkan / Matikan (Jenis): 3µs, 3µs, Masa Naik / Kejatuhan (Jenis): 2µs, 3µs,

Senarai harapan
TLP2309(TPL,E)
Toshiba Semiconductor and Storage

TLP2309(TPL,E)

bahagian bahagian: 196695

Bilangan Saluran: 1, Voltan - Pengasingan: 3750Vrms, Nisbah Pindahan Semasa (Min): 15% @ 16mA, Masa Hidupkan / Matikan (Jenis): 1µs, 1µs (Max),

Senarai harapan
TLP719(TP,F)
Toshiba Semiconductor and Storage

TLP719(TP,F)

bahagian bahagian: 106547

Bilangan Saluran: 1, Voltan - Pengasingan: 5000Vrms, Nisbah Pindahan Semasa (Min): 20% @ 16mA, Masa Hidupkan / Matikan (Jenis): 800ns, 800ns (Max),

Senarai harapan
TLP109(TPR,E)
Toshiba Semiconductor and Storage

TLP109(TPR,E)

bahagian bahagian: 156505

Bilangan Saluran: 1, Voltan - Pengasingan: 3750Vrms, Nisbah Pindahan Semasa (Min): 20% @ 16mA, Masa Hidupkan / Matikan (Jenis): 800ns, 800ns (Max),

Senarai harapan
TLP620-2(GBTP1,F,T)
Toshiba Semiconductor and Storage

TLP620-2(GBTP1,F,T)

bahagian bahagian: 4238

Bilangan Saluran: 2, Voltan - Pengasingan: 5000Vrms, Nisbah Pindahan Semasa (Min): 100% @ 5mA, Nisbah Pindahan Semasa (Maks): 600% @ 5mA, Masa Hidupkan / Matikan (Jenis): 3µs, 3µs, Masa Naik / Kejatuhan (Jenis): 2µs, 3µs,

Senarai harapan
TLP190B(TPR,U,C,F)
Toshiba Semiconductor and Storage

TLP190B(TPR,U,C,F)

bahagian bahagian: 68321

Bilangan Saluran: 1, Voltan - Pengasingan: 2500Vrms, Masa Hidupkan / Matikan (Jenis): 200µs, 1ms,

Senarai harapan
TLP184(TPR,E)
Toshiba Semiconductor and Storage

TLP184(TPR,E)

bahagian bahagian: 143028

Bilangan Saluran: 1, Voltan - Pengasingan: 3750Vrms, Nisbah Pindahan Semasa (Min): 50% @ 5mA, Nisbah Pindahan Semasa (Maks): 400% @ 5mA, Masa Hidupkan / Matikan (Jenis): 9µs, 9µs, Masa Naik / Kejatuhan (Jenis): 5µs, 9µs,

Senarai harapan
TLP183(GB-TPL,E
Toshiba Semiconductor and Storage

TLP183(GB-TPL,E

bahagian bahagian: 190760

Bilangan Saluran: 1, Voltan - Pengasingan: 3750Vrms, Nisbah Pindahan Semasa (Min): 100% @ 5mA, Nisbah Pindahan Semasa (Maks): 600% @ 5mA, Masa Hidupkan / Matikan (Jenis): 3µs, 3µs, Masa Naik / Kejatuhan (Jenis): 2µs, 3µs,

Senarai harapan
TLP388(TPL,E
Toshiba Semiconductor and Storage

TLP388(TPL,E

bahagian bahagian: 16273

Bilangan Saluran: 1, Voltan - Pengasingan: 5000Vrms, Nisbah Pindahan Semasa (Min): 50% @ 5mA, Nisbah Pindahan Semasa (Maks): 600% @ 5mA, Masa Hidupkan / Matikan (Jenis): 3µs, 3µs, Masa Naik / Kejatuhan (Jenis): 2µs, 3µs,

Senarai harapan
TLP2531(F)
Toshiba Semiconductor and Storage

TLP2531(F)

bahagian bahagian: 45851

Bilangan Saluran: 2, Voltan - Pengasingan: 2500Vrms, Nisbah Pindahan Semasa (Min): 19% @ 16mA, Masa Hidupkan / Matikan (Jenis): 200ns, 300ns,

Senarai harapan
TLP185(GB-TPR,E)
Toshiba Semiconductor and Storage

TLP185(GB-TPR,E)

bahagian bahagian: 115017

Bilangan Saluran: 1, Voltan - Pengasingan: 3750Vrms, Nisbah Pindahan Semasa (Min): 100% @ 5mA, Nisbah Pindahan Semasa (Maks): 400% @ 5mA, Masa Hidupkan / Matikan (Jenis): 9µs, 9µs, Masa Naik / Kejatuhan (Jenis): 5µs, 9µs,

Senarai harapan
TLP293-4(V4GBTPE
Toshiba Semiconductor and Storage

TLP293-4(V4GBTPE

bahagian bahagian: 160459

Bilangan Saluran: 4, Voltan - Pengasingan: 3750Vrms, Nisbah Pindahan Semasa (Min): 100% @ 5mA, Nisbah Pindahan Semasa (Maks): 600% @ 5mA, Masa Hidupkan / Matikan (Jenis): 3µs, 3µs, Masa Naik / Kejatuhan (Jenis): 2µs, 3µs,

Senarai harapan
TLP185(GR-TPR,E)
Toshiba Semiconductor and Storage

TLP185(GR-TPR,E)

bahagian bahagian: 178815

Bilangan Saluran: 1, Voltan - Pengasingan: 3750Vrms, Nisbah Pindahan Semasa (Min): 100% @ 5mA, Nisbah Pindahan Semasa (Maks): 300% @ 5mA, Masa Hidupkan / Matikan (Jenis): 9µs, 9µs, Masa Naik / Kejatuhan (Jenis): 5µs, 9µs,

Senarai harapan
TLP383(D4BLLTL,E
Toshiba Semiconductor and Storage

TLP383(D4BLLTL,E

bahagian bahagian: 188187

Bilangan Saluran: 1, Voltan - Pengasingan: 5000Vrms, Nisbah Pindahan Semasa (Min): 200% @ 500µA, Nisbah Pindahan Semasa (Maks): 400% @ 500µA, Masa Hidupkan / Matikan (Jenis): 3µs, 3µs, Masa Naik / Kejatuhan (Jenis): 2µs, 3µs,

Senarai harapan
TLP293-4(V4GBTRE
Toshiba Semiconductor and Storage

TLP293-4(V4GBTRE

bahagian bahagian: 160485

Bilangan Saluran: 4, Voltan - Pengasingan: 3750Vrms, Nisbah Pindahan Semasa (Min): 100% @ 5mA, Nisbah Pindahan Semasa (Maks): 600% @ 5mA, Masa Hidupkan / Matikan (Jenis): 3µs, 3µs, Masa Naik / Kejatuhan (Jenis): 2µs, 3µs,

Senarai harapan
TLP2301(TPL,E
Toshiba Semiconductor and Storage

TLP2301(TPL,E

bahagian bahagian: 190122

Bilangan Saluran: 1, Voltan - Pengasingan: 3750Vrms, Nisbah Pindahan Semasa (Min): 50% @ 1mA, Nisbah Pindahan Semasa (Maks): 600% @ 1mA,

Senarai harapan
TLP291(BL-TP,SE
Toshiba Semiconductor and Storage

TLP291(BL-TP,SE

bahagian bahagian: 185896

Bilangan Saluran: 1, Voltan - Pengasingan: 3750Vrms, Nisbah Pindahan Semasa (Min): 200% @ 5mA, Nisbah Pindahan Semasa (Maks): 600% @ 5mA, Masa Hidupkan / Matikan (Jenis): 3µs, 3µs, Masa Naik / Kejatuhan (Jenis): 2µs, 3µs,

Senarai harapan
TLP291-4(GB-TP,E)
Toshiba Semiconductor and Storage

TLP291-4(GB-TP,E)

bahagian bahagian: 111606

Bilangan Saluran: 4, Voltan - Pengasingan: 2500Vrms, Nisbah Pindahan Semasa (Min): 100% @ 5mA, Nisbah Pindahan Semasa (Maks): 400% @ 5mA, Masa Hidupkan / Matikan (Jenis): 3µs, 3µs, Masa Naik / Kejatuhan (Jenis): 2µs, 3µs,

Senarai harapan
TLP185(GB-TPL,SE
Toshiba Semiconductor and Storage

TLP185(GB-TPL,SE

bahagian bahagian: 124559

Bilangan Saluran: 1, Voltan - Pengasingan: 3750Vrms, Nisbah Pindahan Semasa (Min): 100% @ 5mA, Nisbah Pindahan Semasa (Maks): 600% @ 5mA, Masa Hidupkan / Matikan (Jenis): 3µs, 3µs, Masa Naik / Kejatuhan (Jenis): 2µs, 3µs,

Senarai harapan