Menu
MelayuMelayu
Rfqs / order.
0Rfqs / order.

Transistor - Bipolar (BJT) - Bujang

  • Rumah
  •  
  • Transistor - Bipolar (BJT) - Bujang
2SA1837,S1CSF(J
Toshiba Semiconductor and Storage

2SA1837,S1CSF(J

bahagian bahagian: 7010

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 1A, Voltan - Pemecahan Pemancar Pemungut (Maks): 230V, Ketepuan Vce (Maks) @ Ib, Ic: 1.5V @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 1µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V,

Senarai harapan
2SA1837,HFEYHF(M
Toshiba Semiconductor and Storage

2SA1837,HFEYHF(M

bahagian bahagian: 6997

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 1A, Voltan - Pemecahan Pemancar Pemungut (Maks): 230V, Ketepuan Vce (Maks) @ Ib, Ic: 1.5V @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 1µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V,

Senarai harapan
2SA1837,HFEYHF(J
Toshiba Semiconductor and Storage

2SA1837,HFEYHF(J

bahagian bahagian: 6944

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 1A, Voltan - Pemecahan Pemancar Pemungut (Maks): 230V, Ketepuan Vce (Maks) @ Ib, Ic: 1.5V @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 1µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V,

Senarai harapan
2SA1837,F(J
Toshiba Semiconductor and Storage

2SA1837,F(J

bahagian bahagian: 6994

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 1A, Voltan - Pemecahan Pemancar Pemungut (Maks): 230V, Ketepuan Vce (Maks) @ Ib, Ic: 1.5V @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 1µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V,

Senarai harapan
2SA1837(PAIO,F,M)
Toshiba Semiconductor and Storage

2SA1837(PAIO,F,M)

bahagian bahagian: 6991

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 1A, Voltan - Pemecahan Pemancar Pemungut (Maks): 230V, Ketepuan Vce (Maks) @ Ib, Ic: 1.5V @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 1µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V,

Senarai harapan
2SA1837(LBSAN,F,M)
Toshiba Semiconductor and Storage

2SA1837(LBSAN,F,M)

bahagian bahagian: 6710

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 1A, Voltan - Pemecahan Pemancar Pemungut (Maks): 230V, Ketepuan Vce (Maks) @ Ib, Ic: 1.5V @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 1µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V,

Senarai harapan
2SA1761,T6F(M
Toshiba Semiconductor and Storage

2SA1761,T6F(M

bahagian bahagian: 6956

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 3A, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 75mA, 1.5A, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V,

Senarai harapan
2SA1761,T6F(J
Toshiba Semiconductor and Storage

2SA1761,T6F(J

bahagian bahagian: 6934

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 3A, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 75mA, 1.5A, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V,

Senarai harapan
2SA1761,F(J
Toshiba Semiconductor and Storage

2SA1761,F(J

bahagian bahagian: 6947

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 3A, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 75mA, 1.5A, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V,

Senarai harapan
2SA1680,T6F(J
Toshiba Semiconductor and Storage

2SA1680,T6F(J

bahagian bahagian: 7016

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 2A, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 50mA, 1A, Semasa - Potongan Pemungut (Maksimum): 1µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V,

Senarai harapan
2SA1680,T6SCMDF(J
Toshiba Semiconductor and Storage

2SA1680,T6SCMDF(J

bahagian bahagian: 6980

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 2A, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 50mA, 1A, Semasa - Potongan Pemungut (Maksimum): 1µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V,

Senarai harapan
2SA1680,T6ASTIF(J
Toshiba Semiconductor and Storage

2SA1680,T6ASTIF(J

bahagian bahagian: 7010

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 2A, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 50mA, 1A, Semasa - Potongan Pemungut (Maksimum): 1µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V,

Senarai harapan
2SA1680,F(J
Toshiba Semiconductor and Storage

2SA1680,F(J

bahagian bahagian: 6927

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 2A, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 50mA, 1A, Semasa - Potongan Pemungut (Maksimum): 1µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V,

Senarai harapan
2SA1680(F,M)
Toshiba Semiconductor and Storage

2SA1680(F,M)

bahagian bahagian: 6950

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 2A, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 50mA, 1A, Semasa - Potongan Pemungut (Maksimum): 1µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V,

Senarai harapan
2SA1680(T6DNSO,F,M
Toshiba Semiconductor and Storage

2SA1680(T6DNSO,F,M

bahagian bahagian: 6992

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 2A, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 50mA, 1A, Semasa - Potongan Pemungut (Maksimum): 1µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V,

Senarai harapan
2SA1429-Y(T2TR,F,M
Toshiba Semiconductor and Storage

2SA1429-Y(T2TR,F,M

bahagian bahagian: 6995

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 2A, Voltan - Pemecahan Pemancar Pemungut (Maks): 80V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 50mA, 1A, Semasa - Potongan Pemungut (Maksimum): 1µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V,

Senarai harapan
2SA1429-Y(T2OMI,FM
Toshiba Semiconductor and Storage

2SA1429-Y(T2OMI,FM

bahagian bahagian: 6951

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 2A, Voltan - Pemecahan Pemancar Pemungut (Maks): 80V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 50mA, 1A, Semasa - Potongan Pemungut (Maksimum): 1µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V,

Senarai harapan
2SA1428-Y,T2F(M
Toshiba Semiconductor and Storage

2SA1428-Y,T2F(M

bahagian bahagian: 6771

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 2A, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 50mA, 1A, Semasa - Potongan Pemungut (Maksimum): 1µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V,

Senarai harapan
2SA1428-Y,T2F(J
Toshiba Semiconductor and Storage

2SA1428-Y,T2F(J

bahagian bahagian: 6920

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 2A, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 50mA, 1A, Semasa - Potongan Pemungut (Maksimum): 1µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V,

Senarai harapan
2SA1428-O,T2WNLF(J
Toshiba Semiconductor and Storage

2SA1428-O,T2WNLF(J

bahagian bahagian: 6933

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 2A, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 50mA, 1A, Semasa - Potongan Pemungut (Maksimum): 1µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V,

Senarai harapan
2SA1428-Y(T2TR,A,F
Toshiba Semiconductor and Storage

2SA1428-Y(T2TR,A,F

bahagian bahagian: 7010

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 2A, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 50mA, 1A, Semasa - Potongan Pemungut (Maksimum): 1µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V,

Senarai harapan
2SA1428-O,T2CLAF(M
Toshiba Semiconductor and Storage

2SA1428-O,T2CLAF(M

bahagian bahagian: 6706

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 2A, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 50mA, 1A, Semasa - Potongan Pemungut (Maksimum): 1µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V,

Senarai harapan
2SA1428-O,T2CLAF(J
Toshiba Semiconductor and Storage

2SA1428-O,T2CLAF(J

bahagian bahagian: 7011

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 2A, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 50mA, 1A, Semasa - Potongan Pemungut (Maksimum): 1µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V,

Senarai harapan
2SA1425-Y,T2F(J
Toshiba Semiconductor and Storage

2SA1425-Y,T2F(J

bahagian bahagian: 6927

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 800mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 120V, Ketepuan Vce (Maks) @ Ib, Ic: 1V @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V,

Senarai harapan
2SA1382,T6MIBF(J
Toshiba Semiconductor and Storage

2SA1382,T6MIBF(J

bahagian bahagian: 6952

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 2A, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 33mA, 1A, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 2V,

Senarai harapan
2SA1315-Y,T6ASNF(J
Toshiba Semiconductor and Storage

2SA1315-Y,T6ASNF(J

bahagian bahagian: 6974

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 2A, Voltan - Pemecahan Pemancar Pemungut (Maks): 80V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 50mA, 1A, Semasa - Potongan Pemungut (Maksimum): 1µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V,

Senarai harapan
2SA1315-Y,HOF(M
Toshiba Semiconductor and Storage

2SA1315-Y,HOF(M

bahagian bahagian: 6974

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 2A, Voltan - Pemecahan Pemancar Pemungut (Maks): 80V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 50mA, 1A, Semasa - Potongan Pemungut (Maksimum): 1µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V,

Senarai harapan
2SA1020-Y,T6F(J
Toshiba Semiconductor and Storage

2SA1020-Y,T6F(J

bahagian bahagian: 6924

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 2A, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 50mA, 1A, Semasa - Potongan Pemungut (Maksimum): 1µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V,

Senarai harapan
2SA1020-Y,T6KEHF(M
Toshiba Semiconductor and Storage

2SA1020-Y,T6KEHF(M

bahagian bahagian: 6919

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 2A, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 50mA, 1A, Semasa - Potongan Pemungut (Maksimum): 1µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V,

Senarai harapan
2SA1020-Y,HOF(M
Toshiba Semiconductor and Storage

2SA1020-Y,HOF(M

bahagian bahagian: 6991

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 2A, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 50mA, 1A, Semasa - Potongan Pemungut (Maksimum): 1µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V,

Senarai harapan
2SA1020-Y,F(J
Toshiba Semiconductor and Storage

2SA1020-Y,F(J

bahagian bahagian: 7009

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 2A, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 50mA, 1A, Semasa - Potongan Pemungut (Maksimum): 1µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V,

Senarai harapan
2SA1020-Y(T6TR1,AF
Toshiba Semiconductor and Storage

2SA1020-Y(T6TR1,AF

bahagian bahagian: 6921

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 2A, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 50mA, 1A, Semasa - Potongan Pemungut (Maksimum): 1µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V,

Senarai harapan
2SA1020-Y(T6TOJ,FM
Toshiba Semiconductor and Storage

2SA1020-Y(T6TOJ,FM

bahagian bahagian: 6978

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 2A, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 50mA, 1A, Semasa - Potongan Pemungut (Maksimum): 1µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V,

Senarai harapan
2SA1020-Y(T6ND3,AF
Toshiba Semiconductor and Storage

2SA1020-Y(T6ND3,AF

bahagian bahagian: 6994

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 2A, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 50mA, 1A, Semasa - Potongan Pemungut (Maksimum): 1µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V,

Senarai harapan
2SA1020-Y(T6OMI,FM
Toshiba Semiconductor and Storage

2SA1020-Y(T6OMI,FM

bahagian bahagian: 6918

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 2A, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 50mA, 1A, Semasa - Potongan Pemungut (Maksimum): 1µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V,

Senarai harapan
2SA1020-Y(T6FJT,AF
Toshiba Semiconductor and Storage

2SA1020-Y(T6FJT,AF

bahagian bahagian: 6960

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 2A, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 50mA, 1A, Semasa - Potongan Pemungut (Maksimum): 1µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V,

Senarai harapan