Transistor - Bipolar (BJT) - Bujang | Produk Semikonduktor Diskrit | 11

2SA949-Y,ONK-1F(M

bahagian bahagian: 6969

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 50mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 150V, Ketepuan Vce (Maks) @ Ib, Ic: 800mV @ 1mA, 10A, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V,

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Toshiba Semiconductor and Storage

2SA965-O(TE6,F,M)

bahagian bahagian: 7016

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 800mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 120V, Ketepuan Vce (Maks) @ Ib, Ic: 1V @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V,

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Toshiba Semiconductor and Storage

2SA949-Y,ONK-1F(J

bahagian bahagian: 6976

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 50mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 150V, Ketepuan Vce (Maks) @ Ib, Ic: 800mV @ 1mA, 10A, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V,

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Toshiba Semiconductor and Storage

2SA949-Y,F(J

bahagian bahagian: 6938

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 50mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 150V, Ketepuan Vce (Maks) @ Ib, Ic: 800mV @ 1mA, 10A, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V,

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Toshiba Semiconductor and Storage

2SA949-Y(TE6,F,M)

bahagian bahagian: 6937

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 50mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 150V, Ketepuan Vce (Maks) @ Ib, Ic: 800mV @ 1mA, 10A, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V,

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Toshiba Semiconductor and Storage

2SA949-Y(T6SHRP,FM

bahagian bahagian: 6975

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 50mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 150V, Ketepuan Vce (Maks) @ Ib, Ic: 800mV @ 1mA, 10A, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V,

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Toshiba Semiconductor and Storage

2SA949-Y(T6ONK1,FM

bahagian bahagian: 6952

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 50mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 150V, Ketepuan Vce (Maks) @ Ib, Ic: 800mV @ 1mA, 10A, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V,

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Toshiba Semiconductor and Storage

2SA949-Y(T6JVC1,FM

bahagian bahagian: 7006

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 50mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 150V, Ketepuan Vce (Maks) @ Ib, Ic: 800mV @ 1mA, 10A, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V,

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Toshiba Semiconductor and Storage

2SA949-O(TE6,F,M)

bahagian bahagian: 6949

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 50mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 150V, Ketepuan Vce (Maks) @ Ib, Ic: 800mV @ 1mA, 10A, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V,

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Toshiba Semiconductor and Storage

2SA949-Y(JVC1,F,M)

bahagian bahagian: 6969

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 50mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 150V, Ketepuan Vce (Maks) @ Ib, Ic: 800mV @ 1mA, 10A, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V,

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Toshiba Semiconductor and Storage

2SA1972,T6WNLF(J

bahagian bahagian: 5673

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 400V, Ketepuan Vce (Maks) @ Ib, Ic: 1V @ 10mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 10µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 140 @ 20mA, 5V,

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Toshiba Semiconductor and Storage

2SA1972,F(J

bahagian bahagian: 6973

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 400V, Ketepuan Vce (Maks) @ Ib, Ic: 1V @ 10mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 10µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 140 @ 20mA, 5V,

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Toshiba Semiconductor and Storage

2SA1931,SINFQ(J

bahagian bahagian: 7026

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 5A, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 400mV @ 200mA, 2A, Semasa - Potongan Pemungut (Maksimum): 1µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V,

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Toshiba Semiconductor and Storage

2SA1931,Q(J

bahagian bahagian: 6986

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 5A, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 400mV @ 200mA, 2A, Semasa - Potongan Pemungut (Maksimum): 1µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V,

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Toshiba Semiconductor and Storage

2SA1931,NIKKIQ(J

bahagian bahagian: 6951

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 5A, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 400mV @ 200mA, 2A, Semasa - Potongan Pemungut (Maksimum): 1µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V,

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Toshiba Semiconductor and Storage

2SA1931,NSEIKIQ(J

bahagian bahagian: 6948

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 5A, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 400mV @ 200mA, 2A, Semasa - Potongan Pemungut (Maksimum): 1µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V,

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Toshiba Semiconductor and Storage

2SA1931,NETQ(M

bahagian bahagian: 6957

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 5A, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 400mV @ 200mA, 2A, Semasa - Potongan Pemungut (Maksimum): 1µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V,

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Toshiba Semiconductor and Storage

2SA1931,NETQ(J

bahagian bahagian: 6946

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 5A, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 400mV @ 200mA, 2A, Semasa - Potongan Pemungut (Maksimum): 1µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V,

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Toshiba Semiconductor and Storage

2SA1931,BOSCHQ(J

bahagian bahagian: 6957

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 5A, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 400mV @ 200mA, 2A, Semasa - Potongan Pemungut (Maksimum): 1µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V,

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Toshiba Semiconductor and Storage

2SA1931,KEHINQ(M

bahagian bahagian: 6765

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 5A, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 400mV @ 200mA, 2A, Semasa - Potongan Pemungut (Maksimum): 1µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V,

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Toshiba Semiconductor and Storage

2SA1931(NOMARK,A,Q

bahagian bahagian: 6941

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 5A, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 400mV @ 200mA, 2A, Semasa - Potongan Pemungut (Maksimum): 1µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V,

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Toshiba Semiconductor and Storage

2SA1930,Q(J

bahagian bahagian: 7022

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 2A, Voltan - Pemecahan Pemancar Pemungut (Maks): 180V, Ketepuan Vce (Maks) @ Ib, Ic: 1V @ 100mA, 1A, Semasa - Potongan Pemungut (Maksimum): 5µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V,

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Toshiba Semiconductor and Storage

2SA1930,ONKQ(J

bahagian bahagian: 6775

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 2A, Voltan - Pemecahan Pemancar Pemungut (Maks): 180V, Ketepuan Vce (Maks) @ Ib, Ic: 1V @ 100mA, 1A, Semasa - Potongan Pemungut (Maksimum): 5µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V,

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Toshiba Semiconductor and Storage

2SA1930,CKQ(J

bahagian bahagian: 6939

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 2A, Voltan - Pemecahan Pemancar Pemungut (Maks): 180V, Ketepuan Vce (Maks) @ Ib, Ic: 1V @ 100mA, 1A, Semasa - Potongan Pemungut (Maksimum): 5µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V,

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Toshiba Semiconductor and Storage

2SA1930,LBS2DIAQ(J

bahagian bahagian: 7019

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 2A, Voltan - Pemecahan Pemancar Pemungut (Maks): 180V, Ketepuan Vce (Maks) @ Ib, Ic: 1V @ 100mA, 1A, Semasa - Potongan Pemungut (Maksimum): 5µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V,

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Toshiba Semiconductor and Storage

2SA1930(ONK,Q,M)

bahagian bahagian: 6989

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 2A, Voltan - Pemecahan Pemancar Pemungut (Maks): 180V, Ketepuan Vce (Maks) @ Ib, Ic: 1V @ 100mA, 1A, Semasa - Potongan Pemungut (Maksimum): 5µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V,

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Toshiba Semiconductor and Storage

2SA1930(LBS2MATQ,M

bahagian bahagian: 6940

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 2A, Voltan - Pemecahan Pemancar Pemungut (Maks): 180V, Ketepuan Vce (Maks) @ Ib, Ic: 1V @ 100mA, 1A, Semasa - Potongan Pemungut (Maksimum): 5µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V,

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Toshiba Semiconductor and Storage

2SA1869-Y,Q(J

bahagian bahagian: 7005

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 3A, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 600mV @ 200mA, 2A, Semasa - Potongan Pemungut (Maksimum): 1µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V,

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Toshiba Semiconductor and Storage

2SA1869-Y,MTSAQ(J

bahagian bahagian: 6727

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 3A, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 600mV @ 200mA, 2A, Semasa - Potongan Pemungut (Maksimum): 1µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V,

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Toshiba Semiconductor and Storage

2SA1869-Y(Q,M)

bahagian bahagian: 7004

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 3A, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 600mV @ 200mA, 2A, Semasa - Potongan Pemungut (Maksimum): 1µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V,

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Toshiba Semiconductor and Storage

2SA1869-Y(JKT,Q,M)

bahagian bahagian: 6990

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 3A, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 600mV @ 200mA, 2A, Semasa - Potongan Pemungut (Maksimum): 1µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V,

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Toshiba Semiconductor and Storage

2SA1837,YHF(M

bahagian bahagian: 6947

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 1A, Voltan - Pemecahan Pemancar Pemungut (Maks): 230V, Ketepuan Vce (Maks) @ Ib, Ic: 1.5V @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 1µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V,

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Toshiba Semiconductor and Storage

2SA1837,YHF(J

bahagian bahagian: 6752

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 1A, Voltan - Pemecahan Pemancar Pemungut (Maks): 230V, Ketepuan Vce (Maks) @ Ib, Ic: 1.5V @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 1µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V,

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Toshiba Semiconductor and Storage

2SA1837,WNLF(J

bahagian bahagian: 6966

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 1A, Voltan - Pemecahan Pemancar Pemungut (Maks): 230V, Ketepuan Vce (Maks) @ Ib, Ic: 1.5V @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 1µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V,

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Toshiba Semiconductor and Storage

2SA1837,TOA1F(J

bahagian bahagian: 6942

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 1A, Voltan - Pemecahan Pemancar Pemungut (Maks): 230V, Ketepuan Vce (Maks) @ Ib, Ic: 1.5V @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 1µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V,

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Toshiba Semiconductor and Storage

2SA1837,NSEIKIF(J

bahagian bahagian: 6984

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 1A, Voltan - Pemecahan Pemancar Pemungut (Maks): 230V, Ketepuan Vce (Maks) @ Ib, Ic: 1.5V @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 1µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V,

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