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Transistor - Bipolar (BJT) - Bujang

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  • Transistor - Bipolar (BJT) - Bujang
2SC2655-Y(T6STL,FM
Toshiba Semiconductor and Storage

2SC2655-Y(T6STL,FM

bahagian bahagian: 7032

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 2A, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 50mA, 1A, Semasa - Potongan Pemungut (Maksimum): 1µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V,

Senarai harapan
2SC2655-Y(T6ND2,AF
Toshiba Semiconductor and Storage

2SC2655-Y(T6ND2,AF

bahagian bahagian: 6995

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 2A, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 50mA, 1A, Semasa - Potongan Pemungut (Maksimum): 1µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V,

Senarai harapan
2SC2655-Y(T6ND3,AF
Toshiba Semiconductor and Storage

2SC2655-Y(T6ND3,AF

bahagian bahagian: 6996

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 2A, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 50mA, 1A, Semasa - Potongan Pemungut (Maksimum): 1µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V,

Senarai harapan
2SC2655-Y(T6ND1,AF
Toshiba Semiconductor and Storage

2SC2655-Y(T6ND1,AF

bahagian bahagian: 6997

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 2A, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 50mA, 1A, Semasa - Potongan Pemungut (Maksimum): 1µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V,

Senarai harapan
2SC2655-Y(T6CN,A,F
Toshiba Semiconductor and Storage

2SC2655-Y(T6CN,A,F

bahagian bahagian: 7026

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 2A, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 50mA, 1A, Semasa - Potongan Pemungut (Maksimum): 1µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V,

Senarai harapan
2SC2655-Y(T6CANOFM
Toshiba Semiconductor and Storage

2SC2655-Y(T6CANOFM

bahagian bahagian: 6951

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 2A, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 50mA, 1A, Semasa - Potongan Pemungut (Maksimum): 1µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V,

Senarai harapan
2SC2655-Y(6MBH1,AF
Toshiba Semiconductor and Storage

2SC2655-Y(6MBH1,AF

bahagian bahagian: 6790

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 2A, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 50mA, 1A, Semasa - Potongan Pemungut (Maksimum): 1µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V,

Senarai harapan
2SC2655-Y(HIT,F,M)
Toshiba Semiconductor and Storage

2SC2655-Y(HIT,F,M)

bahagian bahagian: 7001

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 2A, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 50mA, 1A, Semasa - Potongan Pemungut (Maksimum): 1µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V,

Senarai harapan
2SC2655-O(TE6,F,M)
Toshiba Semiconductor and Storage

2SC2655-O(TE6,F,M)

bahagian bahagian: 7046

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 2A, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 50mA, 1A, Semasa - Potongan Pemungut (Maksimum): 1µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V,

Senarai harapan
2SC2655-O,F(J
Toshiba Semiconductor and Storage

2SC2655-O,F(J

bahagian bahagian: 7041

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 2A, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 50mA, 1A, Semasa - Potongan Pemungut (Maksimum): 1µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V,

Senarai harapan
2SC2655-O(ND2,AF)
Toshiba Semiconductor and Storage

2SC2655-O(ND2,AF)

bahagian bahagian: 6981

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 2A, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 50mA, 1A, Semasa - Potongan Pemungut (Maksimum): 1µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V,

Senarai harapan
2SC2482(T6TOJS,F,M
Toshiba Semiconductor and Storage

2SC2482(T6TOJS,F,M

bahagian bahagian: 6736

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 300V, Ketepuan Vce (Maks) @ Ib, Ic: 1V @ 1mA, 10mA, Semasa - Potongan Pemungut (Maksimum): 1µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 10V,

Senarai harapan
2SC2482(FJTN,F,M)
Toshiba Semiconductor and Storage

2SC2482(FJTN,F,M)

bahagian bahagian: 6967

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 300V, Ketepuan Vce (Maks) @ Ib, Ic: 1V @ 1mA, 10mA, Semasa - Potongan Pemungut (Maksimum): 1µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 10V,

Senarai harapan
2SC2383-Y,T6KEHF(M
Toshiba Semiconductor and Storage

2SC2383-Y,T6KEHF(M

bahagian bahagian: 6957

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 1A, Voltan - Pemecahan Pemancar Pemungut (Maks): 160V, Ketepuan Vce (Maks) @ Ib, Ic: 1.5V @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 1µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 60 @ 200mA, 5V,

Senarai harapan
2SC2383-O,T6ALPF(M
Toshiba Semiconductor and Storage

2SC2383-O,T6ALPF(M

bahagian bahagian: 6977

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 1A, Voltan - Pemecahan Pemancar Pemungut (Maks): 160V, Ketepuan Vce (Maks) @ Ib, Ic: 1.5V @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 1µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 60 @ 200mA, 5V,

Senarai harapan
2SC2383-O(T6OMI,FM
Toshiba Semiconductor and Storage

2SC2383-O(T6OMI,FM

bahagian bahagian: 7010

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 1A, Voltan - Pemecahan Pemancar Pemungut (Maks): 160V, Ketepuan Vce (Maks) @ Ib, Ic: 1.5V @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 1µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 60 @ 200mA, 5V,

Senarai harapan
2SC2235-Y,T6USNF(M
Toshiba Semiconductor and Storage

2SC2235-Y,T6USNF(M

bahagian bahagian: 7019

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 800mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 120V, Ketepuan Vce (Maks) @ Ib, Ic: 1V @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V,

Senarai harapan
2SC2235-Y,T6KEHF(M
Toshiba Semiconductor and Storage

2SC2235-Y,T6KEHF(M

bahagian bahagian: 6713

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 800mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 120V, Ketepuan Vce (Maks) @ Ib, Ic: 1V @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V,

Senarai harapan
2SC2235-Y,T6F(J
Toshiba Semiconductor and Storage

2SC2235-Y,T6F(J

bahagian bahagian: 6953

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 800mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 120V, Ketepuan Vce (Maks) @ Ib, Ic: 1V @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V,

Senarai harapan
2SC2235-Y,F(J
Toshiba Semiconductor and Storage

2SC2235-Y,F(J

bahagian bahagian: 7010

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 800mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 120V, Ketepuan Vce (Maks) @ Ib, Ic: 1V @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V,

Senarai harapan
2SC2235-Y,T6ASHF(J
Toshiba Semiconductor and Storage

2SC2235-Y,T6ASHF(J

bahagian bahagian: 6976

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 800mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 120V, Ketepuan Vce (Maks) @ Ib, Ic: 1V @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V,

Senarai harapan
2SC2235-Y(T6OMI,FM
Toshiba Semiconductor and Storage

2SC2235-Y(T6OMI,FM

bahagian bahagian: 7020

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 800mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 120V, Ketepuan Vce (Maks) @ Ib, Ic: 1V @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V,

Senarai harapan
2SC2235-Y(T6ND,AF
Toshiba Semiconductor and Storage

2SC2235-Y(T6ND,AF

bahagian bahagian: 7033

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 800mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 120V, Ketepuan Vce (Maks) @ Ib, Ic: 1V @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V,

Senarai harapan
2SC2235-Y(T6FJT,FM
Toshiba Semiconductor and Storage

2SC2235-Y(T6FJT,FM

bahagian bahagian: 7003

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 800mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 120V, Ketepuan Vce (Maks) @ Ib, Ic: 1V @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V,

Senarai harapan
2SC2235-Y(T6FJT,AF
Toshiba Semiconductor and Storage

2SC2235-Y(T6FJT,AF

bahagian bahagian: 7043

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 800mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 120V, Ketepuan Vce (Maks) @ Ib, Ic: 1V @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V,

Senarai harapan
2SC2235-Y(T6CANOFM
Toshiba Semiconductor and Storage

2SC2235-Y(T6CANOFM

bahagian bahagian: 7009

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 800mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 120V, Ketepuan Vce (Maks) @ Ib, Ic: 1V @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V,

Senarai harapan
2SC2235-Y(T6CN,A,F
Toshiba Semiconductor and Storage

2SC2235-Y(T6CN,A,F

bahagian bahagian: 6993

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 800mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 120V, Ketepuan Vce (Maks) @ Ib, Ic: 1V @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V,

Senarai harapan
2SC2235-Y(MBSH1,FM
Toshiba Semiconductor and Storage

2SC2235-Y(MBSH1,FM

bahagian bahagian: 7012

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 800mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 120V, Ketepuan Vce (Maks) @ Ib, Ic: 1V @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V,

Senarai harapan
2SC2235-Y(DNSO,AF)
Toshiba Semiconductor and Storage

2SC2235-Y(DNSO,AF)

bahagian bahagian: 7039

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 800mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 120V, Ketepuan Vce (Maks) @ Ib, Ic: 1V @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V,

Senarai harapan
2SC2235-Y(6MBH1,AF
Toshiba Semiconductor and Storage

2SC2235-Y(6MBH1,AF

bahagian bahagian: 7029

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 800mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 120V, Ketepuan Vce (Maks) @ Ib, Ic: 1V @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V,

Senarai harapan
2SC2235-O,F(J
Toshiba Semiconductor and Storage

2SC2235-O,F(J

bahagian bahagian: 6952

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 800mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 120V, Ketepuan Vce (Maks) @ Ib, Ic: 1V @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V,

Senarai harapan
2SC2235-O(T6FJT,FM
Toshiba Semiconductor and Storage

2SC2235-O(T6FJT,FM

bahagian bahagian: 6998

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 800mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 120V, Ketepuan Vce (Maks) @ Ib, Ic: 1V @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V,

Senarai harapan
2SC2235-O(T6FJT,AF
Toshiba Semiconductor and Storage

2SC2235-O(T6FJT,AF

bahagian bahagian: 6772

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 800mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 120V, Ketepuan Vce (Maks) @ Ib, Ic: 1V @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V,

Senarai harapan
2SC2235-O(T6ASN,FM
Toshiba Semiconductor and Storage

2SC2235-O(T6ASN,FM

bahagian bahagian: 7019

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 800mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 120V, Ketepuan Vce (Maks) @ Ib, Ic: 1V @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V,

Senarai harapan
2SC2235-O(FA1,F,M)
Toshiba Semiconductor and Storage

2SC2235-O(FA1,F,M)

bahagian bahagian: 6974

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 800mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 120V, Ketepuan Vce (Maks) @ Ib, Ic: 1V @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V,

Senarai harapan
2SC2235(T6KMAT,F,M
Toshiba Semiconductor and Storage

2SC2235(T6KMAT,F,M

bahagian bahagian: 6979

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 800mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 120V, Ketepuan Vce (Maks) @ Ib, Ic: 1V @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V,

Senarai harapan