Transistor - Bipolar (BJT) - Bujang

Rumah
Transistor - Bipolar (BJT) - Bujang

2SD2695(T6CNO,A,F)

Toshiba Semiconductor and Storage

2SD2695(T6CNO,A,F)

bahagian bahagian: 7027

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 2A, Voltan - Pemecahan Pemancar Pemungut (Maks): 60V, Ketepuan Vce (Maks) @ Ib, Ic: 1.5V @ 1mA, 1A, Semasa - Potongan Pemungut (Maksimum): 10µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 2V,

Senarai harapan

2SD2695(T6CANO,F,M

Toshiba Semiconductor and Storage

2SD2695(T6CANO,F,M

bahagian bahagian: 7067

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 2A, Voltan - Pemecahan Pemancar Pemungut (Maks): 60V, Ketepuan Vce (Maks) @ Ib, Ic: 1.5V @ 1mA, 1A, Semasa - Potongan Pemungut (Maksimum): 10µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 2V,

Senarai harapan

2SD2695(T6CANO,A,F

Toshiba Semiconductor and Storage

2SD2695(T6CANO,A,F

bahagian bahagian: 6998

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 2A, Voltan - Pemecahan Pemancar Pemungut (Maks): 60V, Ketepuan Vce (Maks) @ Ib, Ic: 1.5V @ 1mA, 1A, Semasa - Potongan Pemungut (Maksimum): 10µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 2V,

Senarai harapan

2SD2257,NIKKIQ(J

Toshiba Semiconductor and Storage

2SD2257,NIKKIQ(J

bahagian bahagian: 7056

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 3A, Voltan - Pemecahan Pemancar Pemungut (Maks): 100V, Ketepuan Vce (Maks) @ Ib, Ic: 1.5V @ 1.5mA, 1.5A, Semasa - Potongan Pemungut (Maksimum): 10µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 2000 @ 2A, 2V,

Senarai harapan

Toshiba Semiconductor and Storage

2SD2257,Q(J

bahagian bahagian: 6993

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 3A, Voltan - Pemecahan Pemancar Pemungut (Maks): 100V, Ketepuan Vce (Maks) @ Ib, Ic: 1.5V @ 1.5mA, 1.5A, Semasa - Potongan Pemungut (Maksimum): 10µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 2000 @ 2A, 2V,

Senarai harapan

Toshiba Semiconductor and Storage

2SD2257(Q,M)

bahagian bahagian: 7066

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 3A, Voltan - Pemecahan Pemancar Pemungut (Maks): 100V, Ketepuan Vce (Maks) @ Ib, Ic: 1.5V @ 1.5mA, 1.5A, Semasa - Potongan Pemungut (Maksimum): 10µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 2000 @ 2A, 2V,

Senarai harapan

2SD2257,KEHINQ(J

Toshiba Semiconductor and Storage

2SD2257,KEHINQ(J

bahagian bahagian: 6789

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 3A, Voltan - Pemecahan Pemancar Pemungut (Maks): 100V, Ketepuan Vce (Maks) @ Ib, Ic: 1.5V @ 1.5mA, 1.5A, Semasa - Potongan Pemungut (Maksimum): 10µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 2000 @ 2A, 2V,

Senarai harapan

2SD2257(CANO,A,Q)

Toshiba Semiconductor and Storage

2SD2257(CANO,A,Q)

bahagian bahagian: 6792

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 3A, Voltan - Pemecahan Pemancar Pemungut (Maks): 100V, Ketepuan Vce (Maks) @ Ib, Ic: 1.5V @ 1.5mA, 1.5A, Semasa - Potongan Pemungut (Maksimum): 10µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 2000 @ 2A, 2V,

Senarai harapan

2SD2257(CANO,Q,M)

Toshiba Semiconductor and Storage

2SD2257(CANO,Q,M)

bahagian bahagian: 6778

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 3A, Voltan - Pemecahan Pemancar Pemungut (Maks): 100V, Ketepuan Vce (Maks) @ Ib, Ic: 1.5V @ 1.5mA, 1.5A, Semasa - Potongan Pemungut (Maksimum): 10µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 2000 @ 2A, 2V,

Senarai harapan

2SD2206A(T6SEP,F,M

Toshiba Semiconductor and Storage

2SD2206A(T6SEP,F,M

bahagian bahagian: 6989

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 2A, Voltan - Pemecahan Pemancar Pemungut (Maks): 120V, Ketepuan Vce (Maks) @ Ib, Ic: 1.5V @ 1mA, 1A, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 2V,

Senarai harapan

Toshiba Semiconductor and Storage

2SD2206,T6F(J

bahagian bahagian: 7064

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 2A, Voltan - Pemecahan Pemancar Pemungut (Maks): 100V, Ketepuan Vce (Maks) @ Ib, Ic: 1.5V @ 1mA, 1A, Semasa - Potongan Pemungut (Maksimum): 10µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 2V,

Senarai harapan

2SD2206(TE6,F,M)

Toshiba Semiconductor and Storage

2SD2206(TE6,F,M)

bahagian bahagian: 7008

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 2A, Voltan - Pemecahan Pemancar Pemungut (Maks): 100V, Ketepuan Vce (Maks) @ Ib, Ic: 1.5V @ 1mA, 1A, Semasa - Potongan Pemungut (Maksimum): 10µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 2V,

Senarai harapan

2SD2206(T6CNO,A,F)

Toshiba Semiconductor and Storage

2SD2206(T6CNO,A,F)

bahagian bahagian: 7045

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 2A, Voltan - Pemecahan Pemancar Pemungut (Maks): 100V, Ketepuan Vce (Maks) @ Ib, Ic: 1.5V @ 1mA, 1A, Semasa - Potongan Pemungut (Maksimum): 10µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 2V,

Senarai harapan

2SD2206(T6CANO,F,M

Toshiba Semiconductor and Storage

2SD2206(T6CANO,F,M

bahagian bahagian: 7037

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 2A, Voltan - Pemecahan Pemancar Pemungut (Maks): 100V, Ketepuan Vce (Maks) @ Ib, Ic: 1.5V @ 1mA, 1A, Semasa - Potongan Pemungut (Maksimum): 10µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 2V,

Senarai harapan

2SD2129,ALPSQ(M

Toshiba Semiconductor and Storage

2SD2129,ALPSQ(M

bahagian bahagian: 7039

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 3A, Voltan - Pemecahan Pemancar Pemungut (Maks): 100V, Ketepuan Vce (Maks) @ Ib, Ic: 2V @ 12mA, 3A, Semasa - Potongan Pemungut (Maksimum): 100µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 2000 @ 1.5A, 3V,

Senarai harapan

2SD2129,LS4ALPSQ(M

Toshiba Semiconductor and Storage

2SD2129,LS4ALPSQ(M

bahagian bahagian: 7003

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 3A, Voltan - Pemecahan Pemancar Pemungut (Maks): 100V, Ketepuan Vce (Maks) @ Ib, Ic: 2V @ 12mA, 3A, Semasa - Potongan Pemungut (Maksimum): 100µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 2000 @ 1.5A, 3V,

Senarai harapan

2SC6042,T2WNLQ(J

Toshiba Semiconductor and Storage

2SC6042,T2WNLQ(J

bahagian bahagian: 7001

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 1A, Voltan - Pemecahan Pemancar Pemungut (Maks): 375V, Ketepuan Vce (Maks) @ Ib, Ic: 1V @ 100mA, 800mA, Semasa - Potongan Pemungut (Maksimum): 100µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V,

Senarai harapan

Toshiba Semiconductor and Storage

2SC6139,T2F(M

bahagian bahagian: 6717

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 1.5A, Voltan - Pemecahan Pemancar Pemungut (Maks): 160V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 5V,

Senarai harapan

Toshiba Semiconductor and Storage

2SC6040,T2Q(J

bahagian bahagian: 7021

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 1A, Voltan - Pemecahan Pemancar Pemungut (Maks): 800V, Ketepuan Vce (Maks) @ Ib, Ic: 1V @ 100mA, 800mA, Semasa - Potongan Pemungut (Maksimum): 100µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 5V,

Senarai harapan

2SC6042,T2HOSH1Q(J

Toshiba Semiconductor and Storage

2SC6042,T2HOSH1Q(J

bahagian bahagian: 7019

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 1A, Voltan - Pemecahan Pemancar Pemungut (Maks): 375V, Ketepuan Vce (Maks) @ Ib, Ic: 1V @ 100mA, 800mA, Semasa - Potongan Pemungut (Maksimum): 100µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V,

Senarai harapan

2SC6010(T2MITUM,FM

Toshiba Semiconductor and Storage

2SC6010(T2MITUM,FM

bahagian bahagian: 6714

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 1A, Voltan - Pemecahan Pemancar Pemungut (Maks): 600V, Ketepuan Vce (Maks) @ Ib, Ic: 1V @ 75mA, 600mA, Semasa - Potongan Pemungut (Maksimum): 100µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V,

Senarai harapan

2SC6040(TPF2,Q,M)

Toshiba Semiconductor and Storage

2SC6040(TPF2,Q,M)

bahagian bahagian: 7015

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 1A, Voltan - Pemecahan Pemancar Pemungut (Maks): 800V, Ketepuan Vce (Maks) @ Ib, Ic: 1V @ 100mA, 800mA, Semasa - Potongan Pemungut (Maksimum): 100µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 5V,

Senarai harapan

2SC5930(TPF2,F,M)

Toshiba Semiconductor and Storage

2SC5930(TPF2,F,M)

bahagian bahagian: 6994

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 1A, Voltan - Pemecahan Pemancar Pemungut (Maks): 600V, Ketepuan Vce (Maks) @ Ib, Ic: 1V @ 75mA, 600mA, Semasa - Potongan Pemungut (Maksimum): 100µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 40 @ 200mA, 5V,

Senarai harapan

2SC5930(T2MITUM,FM

Toshiba Semiconductor and Storage

2SC5930(T2MITUM,FM

bahagian bahagian: 6971

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 1A, Voltan - Pemecahan Pemancar Pemungut (Maks): 600V, Ketepuan Vce (Maks) @ Ib, Ic: 1V @ 75mA, 600mA, Semasa - Potongan Pemungut (Maksimum): 100µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 40 @ 200mA, 5V,

Senarai harapan

Toshiba Semiconductor and Storage

2SC5201,T6F(J

bahagian bahagian: 6716

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 50mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 600V, Ketepuan Vce (Maks) @ Ib, Ic: 1V @ 500mA, 20mA, Semasa - Potongan Pemungut (Maksimum): 1µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 20mA, 5V,

Senarai harapan

2SC5201,T6MURAF(J

Toshiba Semiconductor and Storage

2SC5201,T6MURAF(J

bahagian bahagian: 7019

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 50mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 600V, Ketepuan Vce (Maks) @ Ib, Ic: 1V @ 500mA, 20mA, Semasa - Potongan Pemungut (Maksimum): 1µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 20mA, 5V,

Senarai harapan

Toshiba Semiconductor and Storage

2SC5201,F(J

bahagian bahagian: 6724

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 50mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 600V, Ketepuan Vce (Maks) @ Ib, Ic: 1V @ 500mA, 20mA, Semasa - Potongan Pemungut (Maksimum): 1µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 20mA, 5V,

Senarai harapan

2SC5201(TE6,F,M)

Toshiba Semiconductor and Storage

2SC5201(TE6,F,M)

bahagian bahagian: 6968

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 50mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 600V, Ketepuan Vce (Maks) @ Ib, Ic: 1V @ 500mA, 20mA, Semasa - Potongan Pemungut (Maksimum): 1µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 20mA, 5V,

Senarai harapan

2SC5172(YAZK,Q,M)

Toshiba Semiconductor and Storage

2SC5172(YAZK,Q,M)

bahagian bahagian: 7006

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 5A, Voltan - Pemecahan Pemancar Pemungut (Maks): 400V, Ketepuan Vce (Maks) @ Ib, Ic: 1V @ 250mA, 2A, Semasa - Potongan Pemungut (Maksimum): 20µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V,

Senarai harapan

2SC5201(T6MURATAFM

Toshiba Semiconductor and Storage

2SC5201(T6MURATAFM

bahagian bahagian: 7026

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 50mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 600V, Ketepuan Vce (Maks) @ Ib, Ic: 1V @ 500mA, 20mA, Semasa - Potongan Pemungut (Maksimum): 1µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 20mA, 5V,

Senarai harapan

Toshiba Semiconductor and Storage

2SC5171,Q(J

bahagian bahagian: 6967

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 2A, Voltan - Pemecahan Pemancar Pemungut (Maks): 180V, Ketepuan Vce (Maks) @ Ib, Ic: 1V @ 100mA, 1A, Semasa - Potongan Pemungut (Maksimum): 5µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V,

Senarai harapan

Toshiba Semiconductor and Storage

2SC5171,ONKQ(J

bahagian bahagian: 6979

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 2A, Voltan - Pemecahan Pemancar Pemungut (Maks): 180V, Ketepuan Vce (Maks) @ Ib, Ic: 1V @ 100mA, 1A, Semasa - Potongan Pemungut (Maksimum): 5µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V,

Senarai harapan

2SC5171(ONK,Q,M)

Toshiba Semiconductor and Storage

2SC5171(ONK,Q,M)

bahagian bahagian: 6992

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 2A, Voltan - Pemecahan Pemancar Pemungut (Maks): 180V, Ketepuan Vce (Maks) @ Ib, Ic: 1V @ 100mA, 1A, Semasa - Potongan Pemungut (Maksimum): 5µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V,

Senarai harapan

2SC5171,MATUDQ(J

Toshiba Semiconductor and Storage

2SC5171,MATUDQ(J

bahagian bahagian: 7059

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 2A, Voltan - Pemecahan Pemancar Pemungut (Maks): 180V, Ketepuan Vce (Maks) @ Ib, Ic: 1V @ 100mA, 1A, Semasa - Potongan Pemungut (Maksimum): 5µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V,

Senarai harapan

2SC5171(LBS2MATQ,M

Toshiba Semiconductor and Storage

2SC5171(LBS2MATQ,M

bahagian bahagian: 6988

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 2A, Voltan - Pemecahan Pemancar Pemungut (Maks): 180V, Ketepuan Vce (Maks) @ Ib, Ic: 1V @ 100mA, 1A, Semasa - Potongan Pemungut (Maksimum): 5µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V,

Senarai harapan

Toshiba Semiconductor and Storage

2SC4935-Y,Q(J

bahagian bahagian: 7005

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 3A, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 600mV @ 200mA, 2A, Semasa - Potongan Pemungut (Maksimum): 1µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V,

Senarai harapan

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