Transistor - Bipolar (BJT) - Bujang | Produk Semikonduktor Diskrit | 11

2SC2229-Y,F(J

bahagian bahagian: 6978

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 50mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 150V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 1mA, 10mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V,

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Toshiba Semiconductor and Storage

2SC2229-Y(TE6,F,M)

bahagian bahagian: 6957

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 50mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 150V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 1mA, 10mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V,

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Toshiba Semiconductor and Storage

2SC2229-Y(T6SAN2FM

bahagian bahagian: 7016

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 50mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 150V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 1mA, 10mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V,

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Toshiba Semiconductor and Storage

2SC2229-Y(T6ONK1FM

bahagian bahagian: 6992

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 50mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 150V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 1mA, 10mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V,

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Toshiba Semiconductor and Storage

2SC2229-Y(SHP1,F,M

bahagian bahagian: 6990

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 50mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 150V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 1mA, 10mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V,

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Toshiba Semiconductor and Storage

2SC2229-Y(SAN2,F,M

bahagian bahagian: 7022

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 50mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 150V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 1mA, 10mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V,

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Toshiba Semiconductor and Storage

2SC2229-Y(SHP,F,M)

bahagian bahagian: 7021

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 50mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 150V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 1mA, 10mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V,

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Toshiba Semiconductor and Storage

2SC2229-Y(MIT,F,M)

bahagian bahagian: 6703

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 50mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 150V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 1mA, 10mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V,

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Toshiba Semiconductor and Storage

2SC2229-Y(MIT1,F,M

bahagian bahagian: 6975

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 50mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 150V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 1mA, 10mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V,

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Toshiba Semiconductor and Storage

2SC2229-O(T6SHP1FM

bahagian bahagian: 7020

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 50mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 150V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 1mA, 10mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V,

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Toshiba Semiconductor and Storage

2SC2229-O(TE6,F,M)

bahagian bahagian: 7022

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 50mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 150V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 1mA, 10mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V,

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Toshiba Semiconductor and Storage

2SC2229-O(T6SAN2FM

bahagian bahagian: 6954

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 50mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 150V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 1mA, 10mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V,

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Toshiba Semiconductor and Storage

2SC2229-O(T6MIT1FM

bahagian bahagian: 6948

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 50mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 150V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 1mA, 10mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V,

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Toshiba Semiconductor and Storage

2SC2229-O(SHP1,F,M

bahagian bahagian: 6990

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 50mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 150V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 1mA, 10mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V,

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Toshiba Semiconductor and Storage

2SC2229-O(SHP,F,M)

bahagian bahagian: 6947

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 50mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 150V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 1mA, 10mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V,

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Toshiba Semiconductor and Storage

2SC2229-O(MITIF,M)

bahagian bahagian: 7035

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 50mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 150V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 1mA, 10mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V,

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Toshiba Semiconductor and Storage

2SC2229-O(MIT1F,M)

bahagian bahagian: 7005

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 50mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 150V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 1mA, 10mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V,

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Toshiba Semiconductor and Storage

2SC2229(TE6SAN1F,M

bahagian bahagian: 6999

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 50mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 150V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 1mA, 10mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V,

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Toshiba Semiconductor and Storage

2SC1627A-O,PASF(M

bahagian bahagian: 7004

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 400mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 80V, Ketepuan Vce (Maks) @ Ib, Ic: 400mV @ 20mA, 200A, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 2V,

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Toshiba Semiconductor and Storage

2SC1627A-Y,PASF(M

bahagian bahagian: 6754

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 400mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 80V, Ketepuan Vce (Maks) @ Ib, Ic: 400mV @ 20mA, 200A, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 2V,

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Toshiba Semiconductor and Storage

2SB1495,Q(M

bahagian bahagian: 6942

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 3A, Voltan - Pemecahan Pemancar Pemungut (Maks): 100V, Ketepuan Vce (Maks) @ Ib, Ic: 1.5V @ 1.5mA, 1.5A, Semasa - Potongan Pemungut (Maksimum): 10µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 2000 @ 2A, 2V,

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Toshiba Semiconductor and Storage

2SB1495,Q(J

bahagian bahagian: 6995

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 3A, Voltan - Pemecahan Pemancar Pemungut (Maks): 100V, Ketepuan Vce (Maks) @ Ib, Ic: 1.5V @ 1.5mA, 1.5A, Semasa - Potongan Pemungut (Maksimum): 10µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 2000 @ 2A, 2V,

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Toshiba Semiconductor and Storage

2SB1457,T6YMEF(M

bahagian bahagian: 7000

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 2A, Voltan - Pemecahan Pemancar Pemungut (Maks): 100V, Ketepuan Vce (Maks) @ Ib, Ic: 1.5V @ 1mA, 1A, Semasa - Potongan Pemungut (Maksimum): 10µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 2V,

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Toshiba Semiconductor and Storage

2SB1481(TOJS,Q,M)

bahagian bahagian: 6996

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 4A, Voltan - Pemecahan Pemancar Pemungut (Maks): 100V, Ketepuan Vce (Maks) @ Ib, Ic: 1.5V @ 6mA, 3A, Semasa - Potongan Pemungut (Maksimum): 2µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 2000 @ 3A, 2V,

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Toshiba Semiconductor and Storage

2SB1457,T6TOTOF(J

bahagian bahagian: 6949

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 2A, Voltan - Pemecahan Pemancar Pemungut (Maks): 100V, Ketepuan Vce (Maks) @ Ib, Ic: 1.5V @ 1mA, 1A, Semasa - Potongan Pemungut (Maksimum): 10µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 2V,

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Toshiba Semiconductor and Storage

2SB1457(TE6,F,M)

bahagian bahagian: 6958

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 2A, Voltan - Pemecahan Pemancar Pemungut (Maks): 100V, Ketepuan Vce (Maks) @ Ib, Ic: 1.5V @ 1mA, 1A, Semasa - Potongan Pemungut (Maksimum): 10µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 2V,

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Toshiba Semiconductor and Storage

2SB1457(T6CNO,A,F)

bahagian bahagian: 6947

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 2A, Voltan - Pemecahan Pemancar Pemungut (Maks): 100V, Ketepuan Vce (Maks) @ Ib, Ic: 1.5V @ 1mA, 1A, Semasa - Potongan Pemungut (Maksimum): 10µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 2V,

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Toshiba Semiconductor and Storage

2SB1375,CLARIONF(M

bahagian bahagian: 6980

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 3A, Voltan - Pemecahan Pemancar Pemungut (Maks): 60V, Ketepuan Vce (Maks) @ Ib, Ic: 1.5V @ 200mA, 2A, Semasa - Potongan Pemungut (Maksimum): 10µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V,

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Toshiba Semiconductor and Storage

2SB1457(T6CANO,F,M

bahagian bahagian: 7012

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 2A, Voltan - Pemecahan Pemancar Pemungut (Maks): 100V, Ketepuan Vce (Maks) @ Ib, Ic: 1.5V @ 1mA, 1A, Semasa - Potongan Pemungut (Maksimum): 10µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 2V,

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Toshiba Semiconductor and Storage

2SA965-Y,T6KOJPF(J

bahagian bahagian: 6968

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 800mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 120V, Ketepuan Vce (Maks) @ Ib, Ic: 1V @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V,

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Toshiba Semiconductor and Storage

2SA965-Y,T6F(J

bahagian bahagian: 7012

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 800mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 120V, Ketepuan Vce (Maks) @ Ib, Ic: 1V @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V,

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Toshiba Semiconductor and Storage

2SA965-Y,SWFF(M

bahagian bahagian: 6956

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 800mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 120V, Ketepuan Vce (Maks) @ Ib, Ic: 1V @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V,

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Toshiba Semiconductor and Storage

2SA965-Y,F(J

bahagian bahagian: 6980

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 800mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 120V, Ketepuan Vce (Maks) @ Ib, Ic: 1V @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V,

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Toshiba Semiconductor and Storage

2SA965-Y(T6CANO,FM

bahagian bahagian: 6968

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 800mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 120V, Ketepuan Vce (Maks) @ Ib, Ic: 1V @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V,

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Toshiba Semiconductor and Storage

2SA965-Y(F,M)

bahagian bahagian: 7009

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 800mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 120V, Ketepuan Vce (Maks) @ Ib, Ic: 1V @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V,

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Toshiba Semiconductor and Storage

2SA965-O,F(J

bahagian bahagian: 6956

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 800mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 120V, Ketepuan Vce (Maks) @ Ib, Ic: 1V @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V,

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