Transistor - Bipolar (BJT) - Bujang

Rumah
Transistor - Bipolar (BJT) - Bujang

2SC4881,LS1SUMIF(M

Toshiba Semiconductor and Storage

2SC4881,LS1SUMIF(M

bahagian bahagian: 6962

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 5A, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 400mV @ 125mA, 2.5A, Semasa - Potongan Pemungut (Maksimum): 1µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V,

Senarai harapan

Toshiba Semiconductor and Storage

2SC4793,YHF(M

bahagian bahagian: 7032

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 1A, Voltan - Pemecahan Pemancar Pemungut (Maks): 230V, Ketepuan Vce (Maks) @ Ib, Ic: 1.5V @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 1µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V,

Senarai harapan

2SC4881(CANO,F,M)

Toshiba Semiconductor and Storage

2SC4881(CANO,F,M)

bahagian bahagian: 7001

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 5A, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 400mV @ 125mA, 2.5A, Semasa - Potongan Pemungut (Maksimum): 1µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V,

Senarai harapan

2SC4793,NSEIKIF(J

Toshiba Semiconductor and Storage

2SC4793,NSEIKIF(J

bahagian bahagian: 7000

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 1A, Voltan - Pemecahan Pemancar Pemungut (Maks): 230V, Ketepuan Vce (Maks) @ Ib, Ic: 1.5V @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 1µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V,

Senarai harapan

2SC4793,TOA1F(J

Toshiba Semiconductor and Storage

2SC4793,TOA1F(J

bahagian bahagian: 7001

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 1A, Voltan - Pemecahan Pemancar Pemungut (Maks): 230V, Ketepuan Vce (Maks) @ Ib, Ic: 1.5V @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 1µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V,

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Toshiba Semiconductor and Storage

2SC4793,HFEF(M

bahagian bahagian: 6995

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 1A, Voltan - Pemecahan Pemancar Pemungut (Maks): 230V, Ketepuan Vce (Maks) @ Ib, Ic: 1.5V @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 1µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V,

Senarai harapan

Toshiba Semiconductor and Storage

2SC4793,HFEF(J

bahagian bahagian: 6784

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 1A, Voltan - Pemecahan Pemancar Pemungut (Maks): 230V, Ketepuan Vce (Maks) @ Ib, Ic: 1.5V @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 1µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V,

Senarai harapan

2SC4793(PAIO,F,M)

Toshiba Semiconductor and Storage

2SC4793(PAIO,F,M)

bahagian bahagian: 7017

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 1A, Voltan - Pemecahan Pemancar Pemungut (Maks): 230V, Ketepuan Vce (Maks) @ Ib, Ic: 1.5V @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 1µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V,

Senarai harapan

Toshiba Semiconductor and Storage

2SC4793,F(J

bahagian bahagian: 7034

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 1A, Voltan - Pemecahan Pemancar Pemungut (Maks): 230V, Ketepuan Vce (Maks) @ Ib, Ic: 1.5V @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 1µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V,

Senarai harapan

2SC4793(LBSAN,F,M)

Toshiba Semiconductor and Storage

2SC4793(LBSAN,F,M)

bahagian bahagian: 7041

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 1A, Voltan - Pemecahan Pemancar Pemungut (Maks): 230V, Ketepuan Vce (Maks) @ Ib, Ic: 1.5V @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 1µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V,

Senarai harapan

Toshiba Semiconductor and Storage

2SC4682,T6F(J

bahagian bahagian: 6959

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 3A, Voltan - Pemecahan Pemancar Pemungut (Maks): 15V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 30mA, 3A, Semasa - Potongan Pemungut (Maksimum): 1µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 800 @ 500mA, 1V,

Senarai harapan

2SC4682,T6CSF(J

Toshiba Semiconductor and Storage

2SC4682,T6CSF(J

bahagian bahagian: 7011

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 3A, Voltan - Pemecahan Pemancar Pemungut (Maks): 15V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 30mA, 3A, Semasa - Potongan Pemungut (Maksimum): 1µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 800 @ 500mA, 1V,

Senarai harapan

Toshiba Semiconductor and Storage

2SC4604,T6F(M

bahagian bahagian: 7050

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 3A, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 75mA, 1.5A, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V,

Senarai harapan

Toshiba Semiconductor and Storage

2SC4604,F(J

bahagian bahagian: 6996

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 3A, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 75mA, 1.5A, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V,

Senarai harapan

2SC3669-Y,T2PASF(M

Toshiba Semiconductor and Storage

2SC3669-Y,T2PASF(M

bahagian bahagian: 6974

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 2A, Voltan - Pemecahan Pemancar Pemungut (Maks): 80V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 50mA, 1A, Semasa - Potongan Pemungut (Maksimum): 1µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V,

Senarai harapan

2SC3669-Y(T2OMI,FM

Toshiba Semiconductor and Storage

2SC3669-Y(T2OMI,FM

bahagian bahagian: 7043

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 2A, Voltan - Pemecahan Pemancar Pemungut (Maks): 80V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 50mA, 1A, Semasa - Potongan Pemungut (Maksimum): 1µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V,

Senarai harapan

2SC3668-Y,T2WNLF(J

Toshiba Semiconductor and Storage

2SC3668-Y,T2WNLF(J

bahagian bahagian: 7046

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 2A, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 50mA, 1A, Semasa - Potongan Pemungut (Maksimum): 1µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V,

Senarai harapan

2SC3668-Y,T2F(M

Toshiba Semiconductor and Storage

2SC3668-Y,T2F(M

bahagian bahagian: 7041

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 2A, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 50mA, 1A, Semasa - Potongan Pemungut (Maksimum): 1µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V,

Senarai harapan

2SC3668-Y,T2F(J

Toshiba Semiconductor and Storage

2SC3668-Y,T2F(J

bahagian bahagian: 7055

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 2A, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 50mA, 1A, Semasa - Potongan Pemungut (Maksimum): 1µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V,

Senarai harapan

2SC3668-Y,F2PANF(J

Toshiba Semiconductor and Storage

2SC3668-Y,F2PANF(J

bahagian bahagian: 7037

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 2A, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 50mA, 1A, Semasa - Potongan Pemungut (Maksimum): 1µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V,

Senarai harapan

2SC3668-O,T2CLAF(J

Toshiba Semiconductor and Storage

2SC3668-O,T2CLAF(J

bahagian bahagian: 6970

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 2A, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 50mA, 1A, Semasa - Potongan Pemungut (Maksimum): 1µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V,

Senarai harapan

2SC3665-Y,T2YNSF(J

Toshiba Semiconductor and Storage

2SC3665-Y,T2YNSF(J

bahagian bahagian: 6966

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 800mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 120V, Ketepuan Vce (Maks) @ Ib, Ic: 1V @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V,

Senarai harapan

2SC3665-Y,T2F(J

Toshiba Semiconductor and Storage

2SC3665-Y,T2F(J

bahagian bahagian: 6997

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 800mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 120V, Ketepuan Vce (Maks) @ Ib, Ic: 1V @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V,

Senarai harapan

2SC3665-Y,T2NSF(J

Toshiba Semiconductor and Storage

2SC3665-Y,T2NSF(J

bahagian bahagian: 6966

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 800mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 120V, Ketepuan Vce (Maks) @ Ib, Ic: 1V @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V,

Senarai harapan

2SC3665-Y(T2NSW,FM

Toshiba Semiconductor and Storage

2SC3665-Y(T2NSW,FM

bahagian bahagian: 7050

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 800mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 120V, Ketepuan Vce (Maks) @ Ib, Ic: 1V @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V,

Senarai harapan

2SC3328-Y,T6CKF(J

Toshiba Semiconductor and Storage

2SC3328-Y,T6CKF(J

bahagian bahagian: 7035

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 2A, Voltan - Pemecahan Pemancar Pemungut (Maks): 80V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 50mA, 1A, Semasa - Potongan Pemungut (Maksimum): 1µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V,

Senarai harapan

2SC3328-O,T6KEHF(M

Toshiba Semiconductor and Storage

2SC3328-O,T6KEHF(M

bahagian bahagian: 6962

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 2A, Voltan - Pemecahan Pemancar Pemungut (Maks): 80V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 50mA, 1A, Semasa - Potongan Pemungut (Maksimum): 1µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V,

Senarai harapan

2SC3225,T6ALPSF(M

Toshiba Semiconductor and Storage

2SC3225,T6ALPSF(M

bahagian bahagian: 6998

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 2A, Voltan - Pemecahan Pemancar Pemungut (Maks): 40V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 1mA, 300mA, Semasa - Potongan Pemungut (Maksimum): 10µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 500 @ 400mA, 1V,

Senarai harapan

2SC2655-Y,T6SWFF(M

Toshiba Semiconductor and Storage

2SC2655-Y,T6SWFF(M

bahagian bahagian: 7008

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 2A, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 50mA, 1A, Semasa - Potongan Pemungut (Maksimum): 1µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V,

Senarai harapan

2SC2655-Y,T6WNLF(J

Toshiba Semiconductor and Storage

2SC2655-Y,T6WNLF(J

bahagian bahagian: 7029

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 2A, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 50mA, 1A, Semasa - Potongan Pemungut (Maksimum): 1µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V,

Senarai harapan

2SC2655-Y,T6KEHF(M

Toshiba Semiconductor and Storage

2SC2655-Y,T6KEHF(M

bahagian bahagian: 7039

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 2A, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 50mA, 1A, Semasa - Potongan Pemungut (Maksimum): 1µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V,

Senarai harapan

Toshiba Semiconductor and Storage

2SC2655-Y,F(J

bahagian bahagian: 7003

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 2A, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 50mA, 1A, Semasa - Potongan Pemungut (Maksimum): 1µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V,

Senarai harapan

2SC2655-Y,T6APNF(M

Toshiba Semiconductor and Storage

2SC2655-Y,T6APNF(M

bahagian bahagian: 6968

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 2A, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 50mA, 1A, Semasa - Potongan Pemungut (Maksimum): 1µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V,

Senarai harapan

2SC2655-Y(TE6,F,M)

Toshiba Semiconductor and Storage

2SC2655-Y(TE6,F,M)

bahagian bahagian: 6969

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 2A, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 50mA, 1A, Semasa - Potongan Pemungut (Maksimum): 1µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V,

Senarai harapan

2SC2655-Y(T6TOJ,FM

Toshiba Semiconductor and Storage

2SC2655-Y(T6TOJ,FM

bahagian bahagian: 7035

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 2A, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 50mA, 1A, Semasa - Potongan Pemungut (Maksimum): 1µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V,

Senarai harapan

2SC2655-Y(T6OMI,FM

Toshiba Semiconductor and Storage

2SC2655-Y(T6OMI,FM

bahagian bahagian: 6762

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 2A, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 50mA, 1A, Semasa - Potongan Pemungut (Maksimum): 1µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V,

Senarai harapan

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