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Transistor - FET, MOSFET - Bujang

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  • Transistor - FET, MOSFET - Bujang
TK12A53D(STA4,Q,M)
Toshiba Semiconductor and Storage

TK12A53D(STA4,Q,M)

bahagian bahagian: 31913

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 525V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 12A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 580 mOhm @ 6A, 10V,

Senarai harapan
TK8Q60W,S1VQ
Toshiba Semiconductor and Storage

TK8Q60W,S1VQ

bahagian bahagian: 36648

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 500 mOhm @ 4A, 10V,

Senarai harapan
TK3A65DA(STA4,QM)
Toshiba Semiconductor and Storage

TK3A65DA(STA4,QM)

bahagian bahagian: 54078

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 650V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.5A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 2.51 Ohm @ 1.3A, 10V,

Senarai harapan
TK14G65W5,RQ
Toshiba Semiconductor and Storage

TK14G65W5,RQ

bahagian bahagian: 61791

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 650V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 13.7A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 300 mOhm @ 6.9A, 10V,

Senarai harapan
TJ80S04M3L(T6L1,NQ
Toshiba Semiconductor and Storage

TJ80S04M3L(T6L1,NQ

bahagian bahagian: 75895

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 80A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 6V, 10V, Rds On (Maks) @ Id, Vgs: 5.2 mOhm @ 40A, 10V,

Senarai harapan
TPHR8504PL,L1Q
Toshiba Semiconductor and Storage

TPHR8504PL,L1Q

bahagian bahagian: 64047

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 150A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 0.85 mOhm @ 50A, 10V,

Senarai harapan
TK100S04N1L,LQ
Toshiba Semiconductor and Storage

TK100S04N1L,LQ

bahagian bahagian: 59911

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 100A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 2.3 mOhm @ 50A, 10V,

Senarai harapan
TK7A65W,S5X
Toshiba Semiconductor and Storage

TK7A65W,S5X

bahagian bahagian: 40074

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 650V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6.8A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 780 mOhm @ 3.4A, 10V,

Senarai harapan
TK15A50D(STA4,Q,M)
Toshiba Semiconductor and Storage

TK15A50D(STA4,Q,M)

bahagian bahagian: 43168

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 500V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 15A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 300 mOhm @ 7.5A, 10V,

Senarai harapan
TK5A55D(STA4,Q,M)
Toshiba Semiconductor and Storage

TK5A55D(STA4,Q,M)

bahagian bahagian: 59442

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 550V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 1.7 Ohm @ 2.5A, 10V,

Senarai harapan
SSM3K15AFS,LF
Toshiba Semiconductor and Storage

SSM3K15AFS,LF

bahagian bahagian: 146399

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 100mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 2.5V, 4V, Rds On (Maks) @ Id, Vgs: 3.6 Ohm @ 10mA, 4V,

Senarai harapan
TK10V60W,LVQ
Toshiba Semiconductor and Storage

TK10V60W,LVQ

bahagian bahagian: 45593

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 9.7A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 380 mOhm @ 4.9A, 10V,

Senarai harapan
TPH2900ENH,L1Q
Toshiba Semiconductor and Storage

TPH2900ENH,L1Q

bahagian bahagian: 67627

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 200V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 33A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 29 mOhm @ 16.5A, 10V,

Senarai harapan
TK60E08K3,S1X(S
Toshiba Semiconductor and Storage

TK60E08K3,S1X(S

bahagian bahagian: 47246

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 75V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 60A, Rds On (Maks) @ Id, Vgs: 9 mOhm @ 30A, 10V,

Senarai harapan
TK8A60DA(STA4,Q,M)
Toshiba Semiconductor and Storage

TK8A60DA(STA4,Q,M)

bahagian bahagian: 45679

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 7.5A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 1 Ohm @ 4A, 10V,

Senarai harapan
TK5A65W,S5X
Toshiba Semiconductor and Storage

TK5A65W,S5X

bahagian bahagian: 41464

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 650V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.2A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 1.2 Ohm @ 2.6A, 10V,

Senarai harapan
TPCA8064-H,LQ(CM
Toshiba Semiconductor and Storage

TPCA8064-H,LQ(CM

bahagian bahagian: 77317

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 20A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 8.2 mOhm @ 10A, 10V,

Senarai harapan
TK160F10N1L,LQ
Toshiba Semiconductor and Storage

TK160F10N1L,LQ

bahagian bahagian: 7982

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 160A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 6V, 10V, Rds On (Maks) @ Id, Vgs: 2.4 mOhm @ 80A, 10V,

Senarai harapan
TK3A60DA(STA4,Q,M)
Toshiba Semiconductor and Storage

TK3A60DA(STA4,Q,M)

bahagian bahagian: 68119

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.5A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 2.8 Ohm @ 1.3A, 10V,

Senarai harapan
TK6A50D(STA4,Q,M)
Toshiba Semiconductor and Storage

TK6A50D(STA4,Q,M)

bahagian bahagian: 60129

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 500V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 1.4 Ohm @ 3A, 10V,

Senarai harapan
TK18E10K3,S1X(S
Toshiba Semiconductor and Storage

TK18E10K3,S1X(S

bahagian bahagian: 56261

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 18A (Ta), Rds On (Maks) @ Id, Vgs: 42 mOhm @ 9A, 10V,

Senarai harapan
TK6Q65W,S1Q
Toshiba Semiconductor and Storage

TK6Q65W,S1Q

bahagian bahagian: 51965

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 650V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.8A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 1.05 Ohm @ 2.9A, 10V,

Senarai harapan
TK6A45DA(STA4,Q,M)
Toshiba Semiconductor and Storage

TK6A45DA(STA4,Q,M)

bahagian bahagian: 65709

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 450V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.5A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 1.35 Ohm @ 2.8A, 10V,

Senarai harapan
TK7A55D(STA4,Q,M)
Toshiba Semiconductor and Storage

TK7A55D(STA4,Q,M)

bahagian bahagian: 51660

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 550V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 7A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 1.25 Ohm @ 3.5A, 10V,

Senarai harapan
TK6Q60W,S1VQ
Toshiba Semiconductor and Storage

TK6Q60W,S1VQ

bahagian bahagian: 45527

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6.2A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 820 mOhm @ 3.1A, 10V,

Senarai harapan
TK9A45D(STA4,Q,M)
Toshiba Semiconductor and Storage

TK9A45D(STA4,Q,M)

bahagian bahagian: 48218

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 450V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 9A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 770 mOhm @ 4.5A, 10V,

Senarai harapan
TK40E10K3,S1X(S
Toshiba Semiconductor and Storage

TK40E10K3,S1X(S

bahagian bahagian: 43237

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 40A (Ta), Rds On (Maks) @ Id, Vgs: 15 mOhm @ 20A, 10V,

Senarai harapan
TPCA8055-H,LQ(M
Toshiba Semiconductor and Storage

TPCA8055-H,LQ(M

bahagian bahagian: 60456

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 56A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 1.9 mOhm @ 28A, 10V,

Senarai harapan
TK12A60D(STA4,Q,M)
Toshiba Semiconductor and Storage

TK12A60D(STA4,Q,M)

bahagian bahagian: 50578

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 12A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 550 mOhm @ 6A, 10V,

Senarai harapan
TK11A50D(STA4,Q,M)
Toshiba Semiconductor and Storage

TK11A50D(STA4,Q,M)

bahagian bahagian: 38250

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 500V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 11A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 600 mOhm @ 5.5A, 10V,

Senarai harapan
TK6A65W,S5X
Toshiba Semiconductor and Storage

TK6A65W,S5X

bahagian bahagian: 38216

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 650V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.8A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 1 Ohm @ 2.9A, 10V,

Senarai harapan
TK8A45D(STA4,Q,M)
Toshiba Semiconductor and Storage

TK8A45D(STA4,Q,M)

bahagian bahagian: 51493

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 450V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 900 mOhm @ 4A, 10V,

Senarai harapan
TK5A65DA(STA4,Q,M)
Toshiba Semiconductor and Storage

TK5A65DA(STA4,Q,M)

bahagian bahagian: 51848

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 650V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.5A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 1.67 Ohm @ 2.3A, 10V,

Senarai harapan
SSM3J327R,LF
Toshiba Semiconductor and Storage

SSM3J327R,LF

bahagian bahagian: 111963

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.9A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.5V, 4.5V, Rds On (Maks) @ Id, Vgs: 93 mOhm @ 1.5A, 4.5V,

Senarai harapan
SSM3K37MFV,L3F
Toshiba Semiconductor and Storage

SSM3K37MFV,L3F

bahagian bahagian: 146195

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 250mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.5V, 4.5V, Rds On (Maks) @ Id, Vgs: 2.2 Ohm @ 100mA, 4.5V,

Senarai harapan
TK6A53D(STA4,Q,M)
Toshiba Semiconductor and Storage

TK6A53D(STA4,Q,M)

bahagian bahagian: 55041

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 525V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 1.3 Ohm @ 3A, 10V,

Senarai harapan