Transistor - Bipolar (BJT) - Bujang | Produk Semikonduktor Diskrit | 11

2SA1943N(S1,E,S)

bahagian bahagian: 30936

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 15A, Voltan - Pemecahan Pemancar Pemungut (Maks): 230V, Ketepuan Vce (Maks) @ Ib, Ic: 3V @ 800mA, 8A, Semasa - Potongan Pemungut (Maksimum): 5µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V,

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Toshiba Semiconductor and Storage

2SC3325-Y,LF

bahagian bahagian: 133517

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 250mV @ 10mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V,

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Toshiba Semiconductor and Storage

2SA2154CT-GR,L3F

bahagian bahagian: 125949

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 300mV @ 10mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V,

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Toshiba Semiconductor and Storage

2SC2712-OTE85LF

bahagian bahagian: 103394

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 150mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 250mV @ 10mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V,

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Toshiba Semiconductor and Storage

2SC3324GRTE85LF

bahagian bahagian: 72

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 120V, Ketepuan Vce (Maks) @ Ib, Ic: 300mV @ 1mA, 10mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V,

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Toshiba Semiconductor and Storage

2SC6026CTGRTPL3

bahagian bahagian: 154

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 250mV @ 10mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V,

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Toshiba Semiconductor and Storage

2SC4944-GR(TE85L,F

bahagian bahagian: 155

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 150mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 250mV @ 10mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V,

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Toshiba Semiconductor and Storage

2SA1182-Y,LF

bahagian bahagian: 105735

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 30V, Ketepuan Vce (Maks) @ Ib, Ic: 250mV @ 10mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V,

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Toshiba Semiconductor and Storage

2SA1162-GR,LF

bahagian bahagian: 114972

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 150mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 300mV @ 10mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V,

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Toshiba Semiconductor and Storage

2SC2713-BL,LF

bahagian bahagian: 141073

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 120V, Ketepuan Vce (Maks) @ Ib, Ic: 300mV @ 1mA, 10mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V,

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Toshiba Semiconductor and Storage

2SA1162-Y,LF

bahagian bahagian: 182069

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 150mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 300mV @ 10mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 100µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V,

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Toshiba Semiconductor and Storage

2SA1298-Y,LF

bahagian bahagian: 110660

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 800mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 25V, Ketepuan Vce (Maks) @ Ib, Ic: 400mV @ 20mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V,

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Toshiba Semiconductor and Storage

2SC2712-BL,LF

bahagian bahagian: 194721

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 150mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 250mV @ 10mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V,

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Toshiba Semiconductor and Storage

2SA1588-O,LF

bahagian bahagian: 146528

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 30V, Ketepuan Vce (Maks) @ Ib, Ic: 250mV @ 10mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 100mA, 1V,

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Toshiba Semiconductor and Storage

2SA1312-BL(TE85L,F

bahagian bahagian: 123

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 120V, Ketepuan Vce (Maks) @ Ib, Ic: 300mV @ 1mA, 10mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V,

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Toshiba Semiconductor and Storage

2SA1832-Y,LF

bahagian bahagian: 160315

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 150mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 300mV @ 10mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V,

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Toshiba Semiconductor and Storage

2SB906-Y(TE16L1,NQ

bahagian bahagian: 107

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 3A, Voltan - Pemecahan Pemancar Pemungut (Maks): 60V, Ketepuan Vce (Maks) @ Ib, Ic: 1.7V @ 300mA, 3A, Semasa - Potongan Pemungut (Maksimum): 100µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V,

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Toshiba Semiconductor and Storage

2SA1586-Y,LF

bahagian bahagian: 100369

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 150mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 300mV @ 10mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V,

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Toshiba Semiconductor and Storage

2SC4213BTE85LF

bahagian bahagian: 179590

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 300mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 20V, Ketepuan Vce (Maks) @ Ib, Ic: 100mV @ 3mA, 30A, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 350 @ 4mA, 2V,

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Toshiba Semiconductor and Storage

2SC4116-BL,LF

bahagian bahagian: 124685

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 150mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 250mV @ 10mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V,

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Toshiba Semiconductor and Storage

2SA1588-GR,LF

bahagian bahagian: 122917

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 30V, Ketepuan Vce (Maks) @ Ib, Ic: 250mV @ 10mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 1V,

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Toshiba Semiconductor and Storage

2SC4738-Y,LF

bahagian bahagian: 134403

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 150mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 250mV @ 10mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V,

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Toshiba Semiconductor and Storage

2SC6026MFVGR,L3F

bahagian bahagian: 189199

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 150mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 250mV @ 10mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V,

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Toshiba Semiconductor and Storage

2SA1832-GR,LF

bahagian bahagian: 172547

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 150mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 300mV @ 10mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V,

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Toshiba Semiconductor and Storage

2SC6076(TE16L1,NV)

bahagian bahagian: 135662

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 3A, Voltan - Pemecahan Pemancar Pemungut (Maks): 80V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 100mA, 1A, Semasa - Potongan Pemungut (Maksimum): 1µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 180 @ 500mA, 2V,

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Toshiba Semiconductor and Storage

2SA1587-BL,LF

bahagian bahagian: 106998

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 120V, Ketepuan Vce (Maks) @ Ib, Ic: 300mV @ 1mA, 10mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V,

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Toshiba Semiconductor and Storage

2SC5242-O(Q)

bahagian bahagian: 515

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 15A, Voltan - Pemecahan Pemancar Pemungut (Maks): 230V, Ketepuan Vce (Maks) @ Ib, Ic: 3V @ 800mA, 8A, Semasa - Potongan Pemungut (Maksimum): 5µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V,

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Toshiba Semiconductor and Storage

2SA1962-O(Q)

bahagian bahagian: 22703

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 15A, Voltan - Pemecahan Pemancar Pemungut (Maks): 230V, Ketepuan Vce (Maks) @ Ib, Ic: 3V @ 800mA, 8A, Semasa - Potongan Pemungut (Maksimum): 5µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V,

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Toshiba Semiconductor and Storage

2SA1943-O(Q)

bahagian bahagian: 22767

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 15A, Voltan - Pemecahan Pemancar Pemungut (Maks): 230V, Ketepuan Vce (Maks) @ Ib, Ic: 3V @ 800mA, 8A, Semasa - Potongan Pemungut (Maksimum): 5µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V,

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Toshiba Semiconductor and Storage

2SC5200N(S1,E,S)

bahagian bahagian: 30915

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 15A, Voltan - Pemecahan Pemancar Pemungut (Maks): 230V, Ketepuan Vce (Maks) @ Ib, Ic: 3V @ 800mA, 8A, Semasa - Potongan Pemungut (Maksimum): 5µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V,

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Toshiba Semiconductor and Storage

2SA1721RTE85LF

bahagian bahagian: 7061

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 300V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 2mA, 20mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 10V,

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Toshiba Semiconductor and Storage

2SA1020-Y,T6NSF(J

bahagian bahagian: 7009

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 2A, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 50mA, 1A, Semasa - Potongan Pemungut (Maksimum): 1µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V,

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Toshiba Semiconductor and Storage

2SA1020-Y,T6WNLF(J

bahagian bahagian: 7019

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 2A, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 50mA, 1A, Semasa - Potongan Pemungut (Maksimum): 1µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V,

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Toshiba Semiconductor and Storage

2SA1020-Y,F(M

bahagian bahagian: 7049

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 2A, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 50mA, 1A, Semasa - Potongan Pemungut (Maksimum): 1µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V,

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Toshiba Semiconductor and Storage

2SD2695,T6F(M

bahagian bahagian: 7066

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 2A, Voltan - Pemecahan Pemancar Pemungut (Maks): 60V, Ketepuan Vce (Maks) @ Ib, Ic: 1.5V @ 1mA, 1A, Semasa - Potongan Pemungut (Maksimum): 10µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 2V,

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Toshiba Semiconductor and Storage

2SD2695,T6F(J

bahagian bahagian: 6988

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 2A, Voltan - Pemecahan Pemancar Pemungut (Maks): 60V, Ketepuan Vce (Maks) @ Ib, Ic: 1.5V @ 1mA, 1A, Semasa - Potongan Pemungut (Maksimum): 10µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 2V,

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