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Transistor - FET, MOSFET - Bujang

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  • Transistor - FET, MOSFET - Bujang
TK15S04N1L,LQ
Toshiba Semiconductor and Storage

TK15S04N1L,LQ

bahagian bahagian: 110924

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 15A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 17.8 mOhm @ 7.5A, 10V,

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TK5P50D(T6RSS-Q)
Toshiba Semiconductor and Storage

TK5P50D(T6RSS-Q)

bahagian bahagian: 127525

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 500V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 1.5 Ohm @ 2.5A, 10V,

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TPH2010FNH,L1Q
Toshiba Semiconductor and Storage

TPH2010FNH,L1Q

bahagian bahagian: 117809

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 250V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.6A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 198 mOhm @ 2.8A, 10V,

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TPH1110ENH,L1Q
Toshiba Semiconductor and Storage

TPH1110ENH,L1Q

bahagian bahagian: 110777

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 200V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 7.2A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 114 mOhm @ 3.6A, 10V,

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SSM3K35CTC,L3F
Toshiba Semiconductor and Storage

SSM3K35CTC,L3F

bahagian bahagian: 122010

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 250mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.2V, 4.5V, Rds On (Maks) @ Id, Vgs: 1.1 Ohm @ 150mA, 4.5V,

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TK20S06K3L(T6L1,NQ
Toshiba Semiconductor and Storage

TK20S06K3L(T6L1,NQ

bahagian bahagian: 135950

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 20A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 6V, 10V, Rds On (Maks) @ Id, Vgs: 29 mOhm @ 10A, 10V,

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TPC8133,LQ(S
Toshiba Semiconductor and Storage

TPC8133,LQ(S

bahagian bahagian: 142820

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 9A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 15 mOhm @ 4.5A, 10V,

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TPH7R006PL,L1Q
Toshiba Semiconductor and Storage

TPH7R006PL,L1Q

bahagian bahagian: 145095

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 60A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 13.5 mOhm @ 10A, 4.5V,

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TK60P03M1,RQ(S
Toshiba Semiconductor and Storage

TK60P03M1,RQ(S

bahagian bahagian: 152903

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 60A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 6.4 mOhm @ 30A, 10V,

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TK80S06K3L(T6L1,NQ
Toshiba Semiconductor and Storage

TK80S06K3L(T6L1,NQ

bahagian bahagian: 78944

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 80A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 6V, 10V, Rds On (Maks) @ Id, Vgs: 5.5 mOhm @ 40A, 10V,

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SSM3K339R,LF
Toshiba Semiconductor and Storage

SSM3K339R,LF

bahagian bahagian: 190791

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.8V, 8V, Rds On (Maks) @ Id, Vgs: 185 mOhm @ 1A, 8V,

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TJ40S04M3L(T6L1,NQ
Toshiba Semiconductor and Storage

TJ40S04M3L(T6L1,NQ

bahagian bahagian: 105767

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 40A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 6V, 10V, Rds On (Maks) @ Id, Vgs: 9.1 mOhm @ 20A, 10V,

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TPN1110ENH,L1Q
Toshiba Semiconductor and Storage

TPN1110ENH,L1Q

bahagian bahagian: 113296

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 200V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 7.2A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 114 mOhm @ 3.6A, 10V,

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TPH8R008NH,L1Q
Toshiba Semiconductor and Storage

TPH8R008NH,L1Q

bahagian bahagian: 104295

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 80V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 34A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 8 mOhm @ 17A, 10V,

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TK10S04K3L(T6L1,NQ
Toshiba Semiconductor and Storage

TK10S04K3L(T6L1,NQ

bahagian bahagian: 144152

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 10A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 6V, 10V, Rds On (Maks) @ Id, Vgs: 28 mOhm @ 5A, 10V,

Senarai harapan
TJ10S04M3L(T6L1,NQ
Toshiba Semiconductor and Storage

TJ10S04M3L(T6L1,NQ

bahagian bahagian: 135878

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 10A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 6V, 10V, Rds On (Maks) @ Id, Vgs: 44 mOhm @ 5A, 10V,

Senarai harapan
SSM3K15AMFV,L3F
Toshiba Semiconductor and Storage

SSM3K15AMFV,L3F

bahagian bahagian: 170532

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 100mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 2.5V, 4V, Rds On (Maks) @ Id, Vgs: 3.6 Ohm @ 10mA, 4V,

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TK6P53D(T6RSS-Q)
Toshiba Semiconductor and Storage

TK6P53D(T6RSS-Q)

bahagian bahagian: 115497

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 525V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 1.3 Ohm @ 3A, 10V,

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TK560P65Y,RQ
Toshiba Semiconductor and Storage

TK560P65Y,RQ

bahagian bahagian: 135881

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 650V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 7A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 560 mOhm @ 3.5A, 10V,

Senarai harapan
TJ20S04M3L(T6L1,NQ
Toshiba Semiconductor and Storage

TJ20S04M3L(T6L1,NQ

bahagian bahagian: 135946

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 20A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 6V, 10V, Rds On (Maks) @ Id, Vgs: 22.2 mOhm @ 10A, 10V,

Senarai harapan
TK30S06K3L(T6L1,NQ
Toshiba Semiconductor and Storage

TK30S06K3L(T6L1,NQ

bahagian bahagian: 128540

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 30A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 6V, 10V, Rds On (Maks) @ Id, Vgs: 18 Ohm @ 15A, 10V,

Senarai harapan
TK9P65W,RQ
Toshiba Semiconductor and Storage

TK9P65W,RQ

bahagian bahagian: 93752

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 650V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 9.3A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 560 mOhm @ 4.6A, 10V,

Senarai harapan
TPH1R712MD,L1Q
Toshiba Semiconductor and Storage

TPH1R712MD,L1Q

bahagian bahagian: 128383

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 60A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 2.5V, 4.5V, Rds On (Maks) @ Id, Vgs: 1.7 mOhm @ 30A, 4.5V,

Senarai harapan
TPH4R606NH,L1Q
Toshiba Semiconductor and Storage

TPH4R606NH,L1Q

bahagian bahagian: 83323

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 32A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 6.5V, 10V, Rds On (Maks) @ Id, Vgs: 4.6 mOhm @ 16A, 10V,

Senarai harapan
TPCA8056-H,LQ(M
Toshiba Semiconductor and Storage

TPCA8056-H,LQ(M

bahagian bahagian: 105511

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 48A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 2.2 mOhm @ 24A, 10V,

Senarai harapan
TPH1110FNH,L1Q
Toshiba Semiconductor and Storage

TPH1110FNH,L1Q

bahagian bahagian: 95924

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 250V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 10A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 112 mOhm @ 5A, 10V,

Senarai harapan
TK80S04K3L(T6L1,NQ
Toshiba Semiconductor and Storage

TK80S04K3L(T6L1,NQ

bahagian bahagian: 78949

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 80A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 6V, 10V, Rds On (Maks) @ Id, Vgs: 3.1 mOhm @ 40A, 10V,

Senarai harapan
TPH1R005PL,L1Q
Toshiba Semiconductor and Storage

TPH1R005PL,L1Q

bahagian bahagian: 82892

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 45V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 150A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 1.04 mOhm @ 50A, 10V,

Senarai harapan
TPN2010FNH,L1Q
Toshiba Semiconductor and Storage

TPN2010FNH,L1Q

bahagian bahagian: 110042

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 250V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.6A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 198 mOhm @ 2.8A, 10V,

Senarai harapan
TK8A50D(STA4,Q,M)
Toshiba Semiconductor and Storage

TK8A50D(STA4,Q,M)

bahagian bahagian: 98335

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 500V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 850 mOhm @ 4A, 10V,

Senarai harapan
TJ8S06M3L(T6L1,NQ)
Toshiba Semiconductor and Storage

TJ8S06M3L(T6L1,NQ)

bahagian bahagian: 144102

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 6V, 10V, Rds On (Maks) @ Id, Vgs: 104 mOhm @ 4A, 10V,

Senarai harapan
TPH4R10ANL,L1Q
Toshiba Semiconductor and Storage

TPH4R10ANL,L1Q

bahagian bahagian: 7692

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 92A (Ta), 70A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 4.1 mOhm @ 35A, 10V,

Senarai harapan
TK6P65W,RQ
Toshiba Semiconductor and Storage

TK6P65W,RQ

bahagian bahagian: 129654

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 650V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.8A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 1.05 Ohm @ 2.9A, 10V,

Senarai harapan
TJ15S06M3L(T6L1,NQ
Toshiba Semiconductor and Storage

TJ15S06M3L(T6L1,NQ

bahagian bahagian: 135951

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 15A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 6V, 10V, Rds On (Maks) @ Id, Vgs: 50 mOhm @ 7.5A, 10V,

Senarai harapan
TK20S04K3L(T6L1,NQ
Toshiba Semiconductor and Storage

TK20S04K3L(T6L1,NQ

bahagian bahagian: 135921

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 20A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 6V, 10V, Rds On (Maks) @ Id, Vgs: 14 mOhm @ 10A, 10V,

Senarai harapan
TJ30S06M3L(T6L1,NQ
Toshiba Semiconductor and Storage

TJ30S06M3L(T6L1,NQ

bahagian bahagian: 104508

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 30A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 6V, 10V, Rds On (Maks) @ Id, Vgs: 21.8 mOhm @ 15A, 10V,

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