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Transistor - FET, MOSFET - Bujang

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  • Transistor - FET, MOSFET - Bujang
TPCA8120,LQ(CM
Toshiba Semiconductor and Storage

TPCA8120,LQ(CM

bahagian bahagian: 83086

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 45A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 3 mOhm @ 22.5A, 10V,

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TJ60S04M3L(T6L1,NQ
Toshiba Semiconductor and Storage

TJ60S04M3L(T6L1,NQ

bahagian bahagian: 86603

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 60A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 6V, 10V, Rds On (Maks) @ Id, Vgs: 6.3 mOhm @ 30A, 10V,

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TK7P65W,RQ
Toshiba Semiconductor and Storage

TK7P65W,RQ

bahagian bahagian: 118054

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 650V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6.8A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 800 mOhm @ 3.4A, 10V,

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TK5P53D(T6RSS-Q)
Toshiba Semiconductor and Storage

TK5P53D(T6RSS-Q)

bahagian bahagian: 123262

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 525V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 1.5 Ohm @ 2.5A, 10V,

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SSM3K15AFU,LF
Toshiba Semiconductor and Storage

SSM3K15AFU,LF

bahagian bahagian: 175836

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 100mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 2.5V, 4V, Rds On (Maks) @ Id, Vgs: 3.6 Ohm @ 10mA, 4V,

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TPN11006NL,LQ
Toshiba Semiconductor and Storage

TPN11006NL,LQ

bahagian bahagian: 101200

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 17A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 11.4 mOhm @ 8.5A, 10V,

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TPH8R903NL,LQ
Toshiba Semiconductor and Storage

TPH8R903NL,LQ

bahagian bahagian: 115691

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 20A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 8.9 mOhm @ 10A, 10V,

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SSM3K336R,LF
Toshiba Semiconductor and Storage

SSM3K336R,LF

bahagian bahagian: 142287

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 95 mOhm @ 2A, 10V,

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SSM3K116TU,LF
Toshiba Semiconductor and Storage

SSM3K116TU,LF

bahagian bahagian: 124084

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.2A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 2.5V, 4.5V, Rds On (Maks) @ Id, Vgs: 100 mOhm @ 500mA, 4.5V,

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TPCP8J01(TE85L,F,M
Toshiba Semiconductor and Storage

TPCP8J01(TE85L,F,M

bahagian bahagian: 7462

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 32V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.5A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4V, 10V, Rds On (Maks) @ Id, Vgs: 35 mOhm @ 3A, 10V,

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SSM6K403TU,LF
Toshiba Semiconductor and Storage

SSM6K403TU,LF

bahagian bahagian: 160075

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.2A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.5V, 4V, Rds On (Maks) @ Id, Vgs: 28 mOhm @ 3A, 4V,

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TPN6R303NC,LQ
Toshiba Semiconductor and Storage

TPN6R303NC,LQ

bahagian bahagian: 135173

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 20A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 6.3 mOhm @ 10A, 10V,

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SSM3K16CT(TPL3)
Toshiba Semiconductor and Storage

SSM3K16CT(TPL3)

bahagian bahagian: 100992

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 100mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.5V, 4V, Rds On (Maks) @ Id, Vgs: 3 Ohm @ 10mA, 4V,

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TK2P60D(TE16L1,NQ)
Toshiba Semiconductor and Storage

TK2P60D(TE16L1,NQ)

bahagian bahagian: 165770

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 4.3 Ohm @ 1A, 10V,

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SSM3K36FS,LF
Toshiba Semiconductor and Storage

SSM3K36FS,LF

bahagian bahagian: 126626

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 500mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.5V, 5V, Rds On (Maks) @ Id, Vgs: 630 mOhm @ 200mA, 5V,

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SSM3J332R,LF
Toshiba Semiconductor and Storage

SSM3J332R,LF

bahagian bahagian: 169586

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.8V, 10V, Rds On (Maks) @ Id, Vgs: 42 mOhm @ 5A, 10V,

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TPH14006NH,L1Q
Toshiba Semiconductor and Storage

TPH14006NH,L1Q

bahagian bahagian: 166914

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 14A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 6.5V, 10V, Rds On (Maks) @ Id, Vgs: 14 mOhm @ 7A, 10V,

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SSM6K513NU,LF
Toshiba Semiconductor and Storage

SSM6K513NU,LF

bahagian bahagian: 134203

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 15A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 8.9 mOhm @ 4A, 10V,

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SSM3J328R,LF
Toshiba Semiconductor and Storage

SSM3J328R,LF

bahagian bahagian: 158450

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.5V, 4.5V, Rds On (Maks) @ Id, Vgs: 29.8 mOhm @ 3A, 4.5V,

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SSM6J507NU,LF
Toshiba Semiconductor and Storage

SSM6J507NU,LF

bahagian bahagian: 126250

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 10A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4V, 10V, Rds On (Maks) @ Id, Vgs: 20 mOhm @ 4A, 10V,

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TPH6R004PL,LQ
Toshiba Semiconductor and Storage

TPH6R004PL,LQ

bahagian bahagian: 7474

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 87A (Ta), 49A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 6 mOhm @ 24.5A, 10V,

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SSM3K7002KFU,LF
Toshiba Semiconductor and Storage

SSM3K7002KFU,LF

bahagian bahagian: 186902

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 400mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 1.5 Ohm @ 100mA, 10V,

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SSM3K376R,LF
Toshiba Semiconductor and Storage

SSM3K376R,LF

bahagian bahagian: 7265

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.8V, 4.5V, Rds On (Maks) @ Id, Vgs: 56 mOhm @ 2A, 4.5V,

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SSM3J331R,LF
Toshiba Semiconductor and Storage

SSM3J331R,LF

bahagian bahagian: 7291

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.5V, 4.5V, Rds On (Maks) @ Id, Vgs: 55 mOhm @ 3A, 4.5V,

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SSM3K56ACT,L3F
Toshiba Semiconductor and Storage

SSM3K56ACT,L3F

bahagian bahagian: 123517

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.4A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.5V, 4.5V, Rds On (Maks) @ Id, Vgs: 235 mOhm @ 800mA, 4.5V,

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SSM3K335R,LF
Toshiba Semiconductor and Storage

SSM3K335R,LF

bahagian bahagian: 165419

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 38 mOhm @ 4A, 10V,

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TPH6R003NL,LQ
Toshiba Semiconductor and Storage

TPH6R003NL,LQ

bahagian bahagian: 185914

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 38A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 6 mOhm @ 19A, 10V,

Senarai harapan
SSM6J414TU,LF
Toshiba Semiconductor and Storage

SSM6J414TU,LF

bahagian bahagian: 168558

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.5V, 4.5V, Rds On (Maks) @ Id, Vgs: 22.5 mOhm @ 6A, 4.5V,

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SSM3K361R,LF
Toshiba Semiconductor and Storage

SSM3K361R,LF

bahagian bahagian: 190687

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.5A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 69 mOhm @ 2A, 10V,

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SSM3K35AMFV,L3F
Toshiba Semiconductor and Storage

SSM3K35AMFV,L3F

bahagian bahagian: 131212

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 250mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.2V, 4.5V, Rds On (Maks) @ Id, Vgs: 1.1 Ohm @ 150mA, 4.5V,

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SSM3K329R,LF
Toshiba Semiconductor and Storage

SSM3K329R,LF

bahagian bahagian: 180365

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.5A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.8V, 4V, Rds On (Maks) @ Id, Vgs: 126 mOhm @ 1A, 4V,

Senarai harapan
SSM6K361NU,LF
Toshiba Semiconductor and Storage

SSM6K361NU,LF

bahagian bahagian: 7288

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.5A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 69 mOhm @ 2A, 10V,

Senarai harapan
SSM6K217FE,LF
Toshiba Semiconductor and Storage

SSM6K217FE,LF

bahagian bahagian: 166457

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.8A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.8V, 8V, Rds On (Maks) @ Id, Vgs: 195 mOhm @ 1A, 8V,

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SSM3K36MFV,L3F
Toshiba Semiconductor and Storage

SSM3K36MFV,L3F

bahagian bahagian: 111367

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 500mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.5V, 5V, Rds On (Maks) @ Id, Vgs: 630 mOhm @ 200mA, 5V,

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TPC6113(TE85L,F,M)
Toshiba Semiconductor and Storage

TPC6113(TE85L,F,M)

bahagian bahagian: 100371

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 2.5V, 4.5V, Rds On (Maks) @ Id, Vgs: 55 mOhm @ 2.5A, 4.5V,

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SSM3K341R,LF
Toshiba Semiconductor and Storage

SSM3K341R,LF

bahagian bahagian: 103520

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4V, 10V, Rds On (Maks) @ Id, Vgs: 36 mOhm @ 5A, 10V,

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